My Inquiry
My Account
Vishay Siliconix SI2305ADS-T1-E3
- Part No.:
- SI2305ADS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2305ADS-T1-E3.pdf
- Description:
- MOSFET P-CH 8V 5.4A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,273
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI2305ADS-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET optimized for low-voltage load switching and DC/DC converter synchronous rectification. It features -8 V drain-source breakdown voltage, 0.040 Ω RDS(on) at VGS = -4.5 V, -4.1 A continuous drain current at TA = 25 °C, and 7.8 nC total gate charge - enabling efficient operation in space-constrained portable power rails.
For engineers reviewing the SI2305ADS-T1-E3 datasheet, SI2305ADS-T1-E3 pinout, SI2305ADS-T1-E3 application, or SI2305ADS-T1-E3 equivalent, key selection criteria include verified -8 V rating, guaranteed 100 % Rg testing, Pb-free SOT-23 (TO-236) packaging, and body diode recovery time (trr) of 33–50 ns under 100 A/µs dI/dt - critical for high-frequency buck converter output stages.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (VGS(th)) ranges from -0.45 V to -0.8 V, supporting logic-level drive from 1.8 V, 2.5 V, and 4.5 V controllers. The integrated source-drain body diode exhibits VSD = -0.8 to -1.2 V at IF = -3.3 A and trr = 33–50 ns, enabling use in synchronous rectification without external Schottky replacement.
Thermal design is enabled by a junction-to-foot (drain) thermal resistance (RthJF) of 60–75 °C/W and a maximum junction temperature of 150 °C. Absolute maximum ratings include ±8 V gate-source voltage, -10 A pulsed drain current, and -5.4 A continuous drain current at TC = 25 °C - confirming suitability for transient-heavy load-switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - Maximum blocking voltage for 5 V and lower rail systems; supports USB OTG, battery protection, and single-cell Li-ion applications. |
| RDS(on) | 0.040 Ω at VGS = -4.5 V - Enables <170 mW conduction loss at 2 A, minimizing self-heating in compact PCB layouts. |
| ID (continuous) | -4.1 A at TA = 25 °C - Rated for sustained load switching in handheld devices and PMIC output stages without forced airflow. |
| Qg | 7.8 nC (typ.) - Low gate charge reduces driver power demand and enables >1 MHz switching in DC/DC converters. |
| trr | 33–50 ns - Fast body diode recovery allows synchronous rectifier operation without shoot-through risk in buck topologies. |
| VGS(th) | -0.45 to -0.8 V - Ensures turn-on with standard 1.8 V GPIO or low-voltage microcontroller outputs. |
| RthJA | 100–130 °C/W - Requires ≥100 mm² copper pour on drain pad for reliable 1 W dissipation at ambient temperatures up to 70 °C. |
Pinout & Package
SOT-23 (TO-236) package with 3 leads: compact 2.8 mm × 2.1 mm footprint, 1.12 mm max height, and drain-connected tab for thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Accepts logic-level negative voltage to turn on; requires no level-shifting for 1.8–4.5 V controllers. |
| 2 (Source) | Reference node | Connected to system ground or higher-potential rail; defines return path for load current and body diode conduction. |
| 3 (Drain) | Power output terminal | Carries full load current and serves as primary thermal path to PCB; must be connected to ≥100 mm² copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for P-channel devices in SOT-23, reducing switching + conduction losses simultaneously. |
| 100 % Rg tested | Ensures consistent gate drive timing across production lots - critical for predictable turn-on/turn-off delays in synchronous rectifiers. |
| Halogen-free construction | Complies with JEDEC JS709A and RoHS Directive 2011/65/EU, eliminating brominated flame retardants without compromising thermal or electrical performance. |
| LITTLE FOOT® thermal design | Optimized leadframe and die attach enable 1.7 W power dissipation at TC = 25 °C - 2× higher than standard SOT-23 MOSFETs. |
Applications
| Battery Load Switch | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Isolating Li-ion battery from system during shutdown or fault conditions in wearables and IoT sensors. IC Role / Device Role / Timing Role: High-side load switch controlling power rail entry with fast turn-off (<20 ns fall time) to prevent backfeed. Use Value: 0.040 Ω RDS(on) limits voltage drop to <80 mV at 2 A, preserving battery runtime; -0.8 V VGS(th) ensures clean turn-on from MCU GPIO. |
Use Scenario: Enabling/disabling 5 V VBUS path in USB-C receptacles with overcurrent and reverse-polarity protection. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch placed between upstream port controller and downstream connector. Use Value: -8 V VDS withstands USB transient surges; body diode VSD ≤ -1.2 V prevents forward conduction during plug insertion bounce. |
| DC/DC Synchronous Rectifier | Hot-Swap Controller Back-End |
|
Use Scenario: Replacing Schottky diode in 3.3 V/5 V buck converter output stage for improved efficiency in FPGA power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by PWM controller with matched gate timing to avoid shoot-through. Use Value: 33–50 ns trr and 1.6 nC Qgd minimize dead-time uncertainty; 7.8 nC Qg reduces gate driver losses at 2 MHz switching. |
Use Scenario: Inrush current limiting and fault isolation in industrial 24 V PLC I/O modules with hot-plug capability. IC Role / Device Role / Timing Role: High-side power switch controlled by dedicated hot-swap IC to manage slew rate and detect overcurrent events. Use Value: -10 A IDM handles surge currents during connector mating; 0.088 Ω RDS(on) at VGS = -1.8 V supports low-voltage control from supervisor ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AO3401 | RDS(on) = 0.052 Ω @ -4.5 V; Qg = 8.5 nC; VDS = -30 V; SOT-23 package | Higher VDS rating suits 12 V systems but increases gate charge and on-resistance vs. SI2305ADS-T1-E3 in ≤5 V rails | Select AO3401 only when system requires >-8 V blocking; otherwise SI2305ADS-T1-E3 delivers lower losses in 3.3 V/5 V domains. |
| DMG1012T | RDS(on) = 0.045 Ω @ -4.5 V; Qg = 6.2 nC; VDS = -8 V; same SOT-23 footprint | Lower Qg improves high-frequency efficiency but lacks 100 % Rg test and halogen-free certification per JEDEC JS709A | Choose DMG1012T for ultra-high-frequency DC/DC where gate charge dominates losses; prefer SI2305ADS-T1-E3 for certified reliability in production-grade consumer electronics. |
Compared with AO3401 and DMG1012T, SI2305ADS-T1-E3 uniquely combines -8 V rating, 0.040 Ω RDS(on), 100 % Rg screening, and JEDEC JS709A halogen-free compliance - making it the optimal choice for cost-sensitive, high-volume 3.3 V/5 V load switching where qualification rigor matters.
Availability
SI2305ADS-T1-E3 is available at Aetrix Electronics and suitable for battery management systems, USB power switches, DC/DC converter synchronous rectifiers, and industrial hot-swap modules requiring stable component supply and full RoHS/halogen-free compliance.
Supply support for SI2305ADS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SI2305ADS-T1-E3 belongs to Vishay's LITTLE FOOT® TrenchFET® family, engineered specifically for high-efficiency, low-voltage load switching and synchronous rectification in space-constrained portable and embedded power systems.
FAQ
What is the maximum continuous drain current for SI2305ADS-T1-E3 at room temperature?
The SI2305ADS-T1-E3 supports -4.1 A continuous drain current at TA = 25 °C when mounted on a standard 1" × 1" FR4 board. This rating drops to -3.3 A at TA = 70 °C due to thermal derating. The device also sustains -5.4 A at TC = 25 °C, confirming robust capability when heatsinked via the drain pad. These values are measured per Vishay Document 69940, Rev. D.
Does SI2305ADS-T1-E3 require a gate driver for 3.3 V microcontroller operation?
No, SI2305ADS-T1-E3 does not require an external gate driver with 3.3 V microcontrollers. Its gate threshold voltage (VGS(th)) ranges from -0.45 V to -0.8 V, ensuring full enhancement at VGS = -3.3 V. At -3.3 V, RDS(on) remains below 0.055 Ω, delivering low conduction loss without level-shifting circuitry - a key advantage confirmed in the transfer characteristics graph of the SI2305ADS-T1-E3 datasheet.
What is the thermal resistance from junction to ambient for SI2305ADS-T1-E3?
The SI2305ADS-T1-E3 has a typical junction-to-ambient thermal resistance (RthJA) of 100 °C/W and a maximum of 130 °C/W when surface-mounted on a 1" × 1" FR4 board. This value assumes standard JEDEC test conditions; actual performance improves significantly with added copper area on the drain pad. For thermal design, Vishay recommends ≥100 mm² of 2-oz copper connected directly to pin 3 (drain).
Is SI2305ADS-T1-E3 suitable for synchronous rectification in a 500 kHz buck converter?
Yes, SI2305ADS-T1-E3 is suitable for synchronous rectification at 500 kHz. Its 7.8 nC total gate charge and 1.6 nC gate-drain charge enable fast, low-loss switching, while its 33–50 ns body diode reverse recovery time prevents cross-conduction during dead-time intervals. Measured turn-off delay (td(off)) is 32–48 ns at VGEN = -4.5 V, supporting precise timing control in high-frequency power stages.
What does the "-T1-E3" suffix indicate in SI2305ADS-T1-E3?
The "-T1-E3" suffix in SI2305ADS-T1-E3 denotes tape-and-reel packaging (T1) and lead (Pb)-free construction (E3), compliant with RoHS Directive 2011/65/EU. This ordering variant uses matte tin plating and excludes lead-based solder alloys. It is distinct from the "-T1-GE3" variant, which adds halogen-free certification per JEDEC JS709A - both share identical electrical and thermal specifications with the base SI2305ADS device.
SI2305ADS-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 960mW (Ta), 1.7W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2305ADS-T1-E3 FAQ
1.How can I place an order for SI2305ADS-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2305ADS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2305ADS-T1-E3 reliable?
The price and inventory of SI2305ADS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2305ADS-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI2305ADS-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2305ADS-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2305ADS-T1-E3?
SI2305ADS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2305ADS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2305ADS-T1-E3?
For technical support, including SI2305ADS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2305ADS-T1-E3 requirements.
6.How does Aetrix verify that SI2305ADS-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI2305ADS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2305ADS-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI2305ADS-T1-E3?
All SI2305ADS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2305ADS-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2305ADS-T1-E3 part is unused and in its original packaging.
Return procedure for SI2305ADS-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI2305ADS-T1-E3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
