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Vishay Siliconix SI2305ADS-T1-GE3
- Part No.:
- SI2305ADS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2305ADS-T1-GE3.pdf
- Description:
- MOSFET P-CH 8V 5.4A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,514
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Product details
Overview
SI2305ADS-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in SOT-23 package, rated for -8 V VDS, 0.040 Ω RDS(on) at VGS = -4.5 V, -4.1 A continuous drain current at TA = 25 °C, and optimized for low-voltage load switching in space-constrained DC/DC converters and power management circuits.
For engineers reviewing the SI2305ADS-T1-GE3 datasheet, SI2305ADS-T1-GE3 pinout, SI2305ADS-T1-GE3 application, or SI2305ADS-T1-GE3 equivalent, this Pb-free and halogen-free discrete MOSFET delivers verified gate charge (7.8 nC), body diode recovery (33 ns trr), and thermal resistance (100 °C/W RthJA) critical for high-efficiency, thermally constrained portable and battery-powered designs.
Technical Context
This device operates as a single P-channel switch with gate threshold voltage of -0.45 to -0.8 V, enabling direct drive from 1.8 V, 2.5 V, and 3.3 V logic controllers. Its trench-based silicon structure achieves low on-resistance while maintaining robust safe operating area (SOA) up to 100 ms pulses at -4 V VDS.
Thermal design is supported by junction-to-foot (drain) resistance of 60 °C/W (typical), allowing efficient heat transfer through the drain pad to PCB copper. The integrated source-drain body diode exhibits VSD = -0.8 to -1.2 V at -3.3 A and Qrr = 14–21 nC, suitable for synchronous rectification and flyback catch applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - Maximum drain-source blocking voltage for 1.8–3.3 V rail switching |
| RDS(on) | 0.040 Ω at VGS = -4.5 V - Enables <165 mW conduction loss at 4.1 A |
| ID (continuous) | -4.1 A at TA = 25 °C - Supports compact load switches up to ~15 W dissipation |
| Qg | 7.8 nC (typ.) - Low gate charge enables fast turn-on with minimal driver strength |
| tr/tf | 35/10 ns (VGEN = -4.5 V) - Supports >1 MHz switching in buck topologies |
| RthJA | 100 °C/W (typ.) - Requires ≥1 cm² 2-oz copper pour for 1.7 W operation at ambient |
| VGS(th) | -0.45 to -0.8 V - Ensures reliable turn-on with standard logic-level microcontrollers |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3-pin configuration; drain (pin 3) serves dual role as primary thermal path to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Accepts logic-level negative voltage; 100 % Rg tested for gate integrity |
| 2 (Source) | Reference node | Connected to higher potential rail; forms return path for load current |
| 3 (Drain) | Power output / thermal interface | Carries full load current and conducts heat directly to PCB copper via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lowest RDS(on) per mm² among SOT-23 P-channel MOSFETs at -4.5 V drive |
| 100 % Rg tested | Guarantees gate resistance ≤7 Ω, ensuring consistent switching speed and EMI behavior |
| Halogen-free & Pb-free | Complies with JEDEC JS709A and RoHS Directive 2011/65/EU for green electronics |
| LITTLE FOOT® thermal design | Optimized leadframe and die attach enable 60 °C/W junction-to-foot thermal resistance |
| Low Qgd/Qg ratio | 0.205 (1.6/7.8 nC) - Reduces Miller-induced shoot-through risk in half-bridge configurations |
Applications
| Battery Load Switch | DC/DC Converter High-Side Switch |
|---|---|
Use Scenario: Isolating backup battery from system during main power failure in wearables and IoT sensors. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side load switch controlled by microcontroller GPIO. Use Value: 0.040 Ω RDS(on) limits voltage drop to <165 mV at 4.1 A, preserving battery runtime and enabling precise low-current cutoff. |
Use Scenario: Synchronous rectification in non-isolated buck converter for FPGA core supply (1.2 V @ 3 A). IC Role / Device Role / Timing Role: High-side switch in discrete buck stage, driven by dedicated gate driver with -4.5 V swing. Use Value: 7.8 nC total gate charge allows <100 ns effective switching window, minimizing dead-time losses at 2 MHz operation. |
| USB Port Power Control | Hot-Swap Circuit Protection |
Use Scenario: Enabling/disabling VBUS to downstream USB peripherals in docking stations. IC Role / Device Role / Timing Role: P-channel MOSFET placed between upstream 5 V rail and USB connector VBUS line. Use Value: -0.45 V VGS(th) ensures full enhancement with 3.3 V logic control, eliminating need for level-shifting circuitry. |
Use Scenario: Inrush current limiting during hot-plug insertion of modular PCBs in industrial backplanes. IC Role / Device Role / Timing Role: Controlled turn-on switch in series with power rail, paired with current-sense resistor and comparator. Use Value: Body diode reverse recovery time (33 ns) and Qrr (14 nC) minimize voltage overshoot during transient turn-off events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω at -4.5 V; Qg = 8.5 nC; same SOT-23 package | Slightly higher conduction loss; identical thermal footprint | Preferred where tighter VGS(th) distribution (-0.5 to -1.0 V) improves margin in 1.8 V systems |
| AO3401 | RDS(on) = 0.055 Ω at -4.5 V; Qg = 9.5 nC; RthJA = 125 °C/W | Higher thermal resistance requires larger copper area for same power handling | Selected when cost sensitivity outweighs 12 % RDS(on) penalty and thermal derating is acceptable |
Compared with DMG2305UVT-7 and AO3401, SI2305ADS-T1-GE3 offers the lowest RDS(on) and best thermal resistance in SOT-23, making it optimal for high-current, thermally constrained load-switching where efficiency and board area are prioritized over absolute lowest BOM cost.
Availability
SI2305ADS-T1-GE3 is available at Aetrix Electronics and suitable for battery management, USB power delivery, and DC/DC converter applications requiring stable component supply, halogen-free compliance, and validated thermal performance in SOT-23 footprint.
Supply support for SI2305ADS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SI2305ADS-T1-GE3 belongs to Vishay's LITTLE FOOT® SOT-23 power MOSFET family, engineered specifically for space-constrained, high-efficiency load switching and DC/DC conversion in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for SI2305ADS-T1-GE3 at 70 °C ambient temperature?
The SI2305ADS-T1-GE3 supports -3.3 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under natural convection; using enhanced copper pours can improve current capability. SI2305ADS-T1-GE3 maintains RDS(on) stability across this range due to its trench silicon process.
Does SI2305ADS-T1-GE3 have a guaranteed gate resistance specification?
Yes - SI2305ADS-T1-GE3 undergoes 100 % Rg testing per datasheet Document Number 69940, with gate resistance specified as 1.4–7 Ω (typ./max) at 1 MHz. This ensures predictable gate drive timing and minimizes variation in switching behavior across production lots. SI2305ADS-T1-GE3's Rg consistency supports reliable design of high-frequency gate drivers without additional external damping.
Can SI2305ADS-T1-GE3 be used in a synchronous buck converter as the high-side switch?
Yes - SI2305ADS-T1-GE3 is suitable as a high-side switch in non-isolated synchronous buck converters operating up to 2 MHz, provided gate drive provides sufficient negative swing (≥-4.5 V) and layout minimizes source inductance. Its 7.8 nC Qg, 35 ns tr, and low Qgd/Qg ratio make SI2305ADS-T1-GE3 well-suited for this role in 3.3 V or 5 V input stages delivering up to 4 A.
What is the body diode forward voltage of SI2305ADS-T1-GE3 at -3.3 A?
The body diode forward voltage (VSD) of SI2305ADS-T1-GE3 is -0.8 to -1.2 V at IF = -3.3 A and TJ = 25 °C, as measured under pulsed conditions. This parameter is critical for evaluating conduction loss during dead-time intervals in half-bridge or synchronous rectifier configurations. SI2305ADS-T1-GE3's VSD remains stable across temperature, supporting predictable thermal modeling.
Is SI2305ADS-T1-GE3 compliant with both RoHS and halogen-free standards?
Yes - SI2305ADS-T1-GE3 is certified Pb-free and halogen-free per JEDEC JS709A and RoHS Directive 2011/65/EU, as confirmed in Vishay documentation S09-0538-Rev. D. The "GE3" suffix explicitly denotes compliance with both requirements, distinguishing it from the "E3" variant (Pb-free only). SI2305ADS-T1-GE3 meets IEC 61249-2-21 definition for halogen-free materials.
SI2305ADS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 960mW (Ta), 1.7W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2305ADS-T1-GE3 FAQ
1.How can I place an order for SI2305ADS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2305ADS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2305ADS-T1-GE3 reliable?
The price and inventory of SI2305ADS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2305ADS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2305ADS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2305ADS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2305ADS-T1-GE3?
SI2305ADS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2305ADS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2305ADS-T1-GE3?
For technical support, including SI2305ADS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2305ADS-T1-GE3 requirements.
6.How does Aetrix verify that SI2305ADS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2305ADS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2305ADS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2305ADS-T1-GE3?
All SI2305ADS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2305ADS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2305ADS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2305ADS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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