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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2305CDS-T1-BE3

Name: SI2305CDS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2305CDS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2305CDS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2305CDS-T1-BE3.pdf

Description:: P-CHANNEL 8-V (D-S) MOSFET

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Product details

Overview

SI2305CDS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in SOT-23 package, rated for -8 V V_DS, 0.035 Ω R_DS(on) at -4.5 V V_GS, and -5.8 A continuous drain current at T_C = 25 °C. It serves as a low-side load switch or synchronous rectifier in portable DC/DC converters.

For engineers reviewing the SI2305CDS-T1-BE3 datasheet, SI2305CDS-T1-BE3 pinout, SI2305CDS-T1-BE3 application, or SI2305CDS-T1-BE3 equivalent, key selection criteria include guaranteed R_g testing, halogen-free compliance per IEC 61249-2-21, and validated thermal performance up to 150 °C junction temperature in compact SOT-23 footprint.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: 12 nC total gate charge at -4.5 V drive, 30 ns rise time, and 55 ns body diode reverse recovery time. Its -1 V typical V_GS(th) enables reliable turn-on from standard logic-level controllers.

The MOSFET integrates a robust intrinsic body diode with -0.8 V forward voltage at -3.5 A and 35 ns trr, supporting bidirectional current handling in buck converter freewheeling paths and reverse-polarity protection circuits without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum blocking voltage for low-voltage battery-side switching (e.g., 3.3 V or 5 V rail protection).
R_DS(on)	0.035 Ω at V_GS = -4.5 V - Enables ≤170 mW conduction loss at 4.4 A, critical for thermally constrained portable PCBs.
I_D (cont.)	-5.8 A at T_C = 25 °C - Supports high-current load switching in space-constrained applications with adequate heatsinking.
Q_g	12 nC at V_GS = -4.5 V - Low gate charge reduces driver power demand and switching losses in high-frequency DC/DC topologies.
T_J Range	-55 to +150 °C - Qualified for extended industrial and automotive cabin environments without derating below -40 °C.
R_thJA	130 °C/W max - Defines thermal limit for 0.96 W dissipation at ambient; requires careful pad layout per AN826 for SOT-23.

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package: 3-pin, single-row, gull-wing leads; 2.8 mm × 2.1 mm footprint; 1.12 mm max height; RoHS-compliant, halogen-free molding compound.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or higher-potential rail; forms common node with body diode cathode.
2 (Gate)	Control electrode for channel formation	Driven negative relative to source to turn on; requires <12 nC charge for full enhancement at -4.5 V.
3 (Drain)	Main current output terminal	Connected to load or switched supply rail; electrically tied to exposed drain tab (thermal path to PCB).

Key Features

Feature	Design Value
100 % R_g tested	Guarantees gate resistance ≤10.2 Ω, ensuring consistent switching speed and EMI profile across production lots.
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar P-MOSFETs at same die size, enabling smaller SOT-23 footprint without performance trade-off.
Halogen-free construction	Meets IEC 61249-2-21 definition - eliminates brominated flame retardants for safer end-of-life processing.
Body diode optimized	35 ns t_rr and 14 nC Q_rr minimize switching loss and voltage overshoot during synchronous rectification.

Applications

Portable Load Switching	DC/DC Synchronous Rectification
Use Scenario: Power sequencing and battery disconnect in smartphones, wearables, and Bluetooth headsets. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET controlling V_BAT-fed subsystems with logic-level gate drive. Use Value: 0.035 Ω R_DS(on) limits dropout to <160 mV at 4.4 A, preserving runtime and enabling rapid enable/disable transitions.	Use Scenario: Freewheeling path in 3.3 V/5 V buck converters powering SoCs and PMICs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Body diode V_SD = -0.8 V at -3.5 A and t_rr = 35 ns enable >92 % efficiency at 1 MHz switching with minimal ringing.
Reverse Polarity Protection	Hot-Swap Circuitry
Use Scenario: Preventing damage from incorrect battery insertion in handheld medical devices and IoT sensors. IC Role / Device Role / Timing Role: In-line P-MOSFET with gate tied to input via resistor, blocking reverse current flow. Use Value: -8 V V_DS rating accommodates 2-cell Li-ion (8.4 V max) while -0.4 V V_GS(th) ensures robust turn-on margin.	Use Scenario: Controlled power-up of peripheral modules in industrial gateways and edge AI accelerators. IC Role / Device Role / Timing Role: Gate-controlled load switch limiting inrush current during hot-plug events. Use Value: 20 A pulsed drain rating and 1.7 W P_D at T_C = 25 °C support safe 500 ms inrush clamping without thermal shutdown.

Portable Load Switching

DC/DC Synchronous Rectification

Use Scenario: Power sequencing and battery disconnect in smartphones, wearables, and Bluetooth headsets.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET controlling V_BAT-fed subsystems with logic-level gate drive.

Use Value: 0.035 Ω R_DS(on) limits dropout to <160 mV at 4.4 A, preserving runtime and enabling rapid enable/disable transitions.

Use Scenario: Freewheeling path in 3.3 V/5 V buck converters powering SoCs and PMICs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Body diode V_SD = -0.8 V at -3.5 A and t_rr = 35 ns enable >92 % efficiency at 1 MHz switching with minimal ringing.

Reverse Polarity Protection

Hot-Swap Circuitry

Use Scenario: Preventing damage from incorrect battery insertion in handheld medical devices and IoT sensors.

IC Role / Device Role / Timing Role: In-line P-MOSFET with gate tied to input via resistor, blocking reverse current flow.

Use Value: -8 V V_DS rating accommodates 2-cell Li-ion (8.4 V max) while -0.4 V V_GS(th) ensures robust turn-on margin.

Use Scenario: Controlled power-up of peripheral modules in industrial gateways and edge AI accelerators.

IC Role / Device Role / Timing Role: Gate-controlled load switch limiting inrush current during hot-plug events.

Use Value: 20 A pulsed drain rating and 1.7 W P_D at T_C = 25 °C support safe 500 ms inrush clamping without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.045 Ω at -4.5 V; 15 nC Q_g; same SOT-23 package but no R_g test guarantee.	Higher gate charge increases driver loss in >1 MHz converters; suitable where cost sensitivity outweighs efficiency.	Select DMG2305UVT-7 only when gate drive strength is ample and thermal budget allows 14 % higher conduction loss.
AO3401	R_DS(on) = 0.055 Ω at -4.5 V; -4.2 A I_D; slightly larger R_thJA (140 °C/W); RoHS-compliant but not halogen-free.	Lower current rating and higher thermal resistance restrict use in sustained >3.5 A loads or high-ambient environments.	Choose AO3401 if halogen-free compliance is non-mandatory and board layout permits minor efficiency compromise.

Compared with DMG2305UVT-7 and AO3401, SI2305CDS-T1-BE3 delivers the lowest R_DS(on) and guaranteed R_g in its class, making it optimal for thermally aggressive, high-efficiency portable power rails where halogen-free materials are required.

Availability

SI2305CDS-T1-BE3 is available at Aetrix Electronics and suitable for portable load switching, DC/DC synchronous rectification, reverse polarity protection, and hot-swap circuitry requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI2305CDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for high-reliability industrial and computing applications.

The Si2305CDS product line targets compact, high-efficiency power management in battery-powered systems, leveraging TrenchFET® technology to maximize current density and thermal performance in SOT-23 packages.

FAQ

What is the maximum continuous drain current for SI2305CDS-T1-BE3 at 70 °C case temperature?

The SI2305CDS-T1-BE3 supports -4.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C. The SI2305CDS-T1-BE3 datasheet confirms this value under steady-state conditions with proper PCB copper area.

Does SI2305CDS-T1-BE3 have a guaranteed gate resistance specification?

Yes, SI2305CDS-T1-BE3 is 100 % R_g tested with a maximum gate resistance of 10.2 Ω, as documented in the Dynamic specifications table. This ensures predictable turn-on/turn-off timing and consistent EMI behavior across all units. The SI2305CDS-T1-BE3 gate resistance tolerance is verified during final test, unlike many competing P-MOSFETs that only specify typical values.

Can SI2305CDS-T1-BE3 be used in a high-side switch configuration?

No, SI2305CDS-T1-BE3 is not suitable for high-side switching due to its P-channel enhancement-mode structure and lack of integrated level-shifting capability. Driving the gate sufficiently negative relative to the drain (which sits at the supply rail) requires a dedicated charge pump or floating supply. The SI2305CDS-T1-BE3 is optimized for low-side switching or reverse polarity protection where source is referenced to ground or a fixed potential.

What is the body diode forward voltage of SI2305CDS-T1-BE3 at -3.5 A?

The SI2305CDS-T1-BE3 body diode exhibits a forward voltage of -0.8 V to -1.2 V at -3.5 A and T_J = 25 °C, per the Drain-Source Body Diode Characteristics table. This low V_SD minimizes conduction loss during freewheeling, especially important in synchronous buck converters where the SI2305CDS-T1-BE3 replaces external Schottky diodes.

Is SI2305CDS-T1-BE3 compliant with both RoHS and halogen-free standards?

Yes, SI2305CDS-T1-BE3 complies with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21, as explicitly stated in the Features section of the official Vishay datasheet. The "-BE3" suffix denotes lead (Pb)-free and halogen-free construction, confirmed by Vishay's material declarations and packaging documentation for Document Number 64847.

SI2305CDS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Ta), 5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 960 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 960mW (Ta), 1.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2305CDS-T1-BE3 FAQ

1.How can I place an order for SI2305CDS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2305CDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2305CDS-T1-BE3 reliable?

The price and inventory of SI2305CDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2305CDS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2305CDS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2305CDS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2305CDS-T1-BE3?

SI2305CDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2305CDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2305CDS-T1-BE3?

For technical support, including SI2305CDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2305CDS-T1-BE3 requirements.

6.How does Aetrix verify that SI2305CDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2305CDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2305CDS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2305CDS-T1-BE3?

All SI2305CDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2305CDS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2305CDS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2305CDS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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