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Vishay Siliconix SI2307BDS-T1-BE3
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- Part No.:
- SI2307BDS-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2307BDS-T1-BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,084
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Product details
Overview
SI2307BDS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.078 Ω RDS(on) at VGS = -10 V and -3.2 A continuous drain current at TA = 25 °C, used in low-side load switching and power management circuits in portable electronics and DC-DC converters.
For engineers reviewing the SI2307BDS-T1-BE3 datasheet, SI2307BDS-T1-BE3 pinout, SI2307BDS-T1-BE3 application, or SI2307BDS-T1-BE3 equivalent, key selection criteria include verified RDS(on) at -4.5 V gate drive, thermal resistance (RthJA ≤ 100 °C/W), SOT-23 package compatibility, and guaranteed -30 V VDS rating under pulsed and steady-state conditions.
Technical Context
This device operates as a normally-off P-channel switch with gate-threshold voltage (VGS(th)) between -1.0 V and -3.0 V, enabling logic-level control from 3.3 V or 5 V microcontrollers when referenced to source. Its trench-based silicon structure delivers low on-resistance and fast switching with Qg = 9–15 nC and td(on)/td(off) < 40 ns.
Designed for surface-mount use on FR4 PCBs, it supports continuous operation up to TJ = 150 °C, with thermal performance governed by RthJA = 80–100 °C/W (steady state) and integrated body diode (VSD = -0.85 to -1.2 V at IS = -0.75 A) for synchronous rectification or reverse polarity protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage before avalanche breakdown; defines safe operating range in negative-rail switching applications. |
| RDS(on) @ VGS = -10 V | 0.078 Ω - Confirmed on-resistance at full gate drive; enables <100 mW conduction loss at 3.2 A. |
| RDS(on) @ VGS = -4.5 V | 0.130 Ω - Verified performance at common logic-level gate drive; critical for battery-powered 3.3 V systems. |
| ID Continuous (TA = 25 °C) | -3.2 A - Maximum DC current with no heatsink on standard FR4; sets practical load capacity in compact layouts. |
| Qg | 9–15 nC - Total gate charge determines driver strength requirement and switching loss in PWM operation. |
| RthJA | 100 °C/W - Maximum junction-to-ambient thermal resistance; defines required board copper area for thermal compliance. |
| VGS(th) | -1.0 to -3.0 V - Gate threshold range ensures reliable turn-on with margin above typical 3.3 V logic high. |
Pinout & Package
SI2307BDS-T1-BE3 is housed in a standard SOT-23 (TO-236) plastic surface-mount package measuring 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm, with gull-wing leads and specified pad layout per Vishay Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Accepts negative gate-source voltage to turn on; requires stable -4.5 V to -10 V drive relative to source terminal. |
| 2 (Source) | Reference node | Common return path for load current and gate drive reference; connects to higher potential rail in high-side configurations. |
| 3 (Drain) | Power output | Switched negative-rail output; carries full load current to ground or lower-potential node when device is on. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) in SOT-23 footprint, reducing conduction losses without increasing board area. |
| Logic-level gate drive | Guaranteed turn-on with -4.5 V VGS, compatible with 3.3 V microcontrollers and PMICs without level-shifting circuitry. |
| Integrated body diode | Forward voltage VSD = -0.85 to -1.2 V at -0.75 A supports reverse-current paths in buck regulators and polarity protection. |
| Halogen-free option available | Si2307BDS-T1-GE3 variant meets IEC 61249-2-21 requirements; BE3 marking indicates lead-free (RoHS-compliant) construction. |
Applications
| Battery-Powered Load Switching | USB Port Power Control |
|---|---|
Use Scenario: Enabling/disabling power to peripheral modules (e.g., Bluetooth radios, sensors) in handheld devices to extend battery life. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling VBAT connection to load; activated by MCU GPIO with inverted logic. Use Value: 0.130 Ω RDS(on) at -4.5 V ensures <200 mW loss at 1.3 A, minimizing self-heating during sustained operation. | Use Scenario: Providing overcurrent and reverse-voltage protection for downstream USB peripherals connected to host ports. IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed between USB VBUS and load; blocks fault currents when miswired. Use Value: -30 V VDS rating exceeds USB 2.0/3.0 VBUS tolerance (5.25 V), ensuring robustness against transient surges. |
| DC-DC Converter Synchronous Rectifier | Industrial Sensor Interface Protection |
Use Scenario: Replacing Schottky diodes in non-isolated buck converter outputs to improve efficiency at light-to-moderate loads. IC Role / Device Role / Timing Role: Synchronously commutated low-side switch driven by controller's complementary output; conducts during freewheeling phase. Use Value: Body diode VSD = -0.85 V and low Qg enable fast turn-on with minimal reverse recovery loss in 500 kHz–1 MHz designs. | Use Scenario: Isolating analog sensor inputs (e.g., thermocouples, RTDs) from supply rail faults in programmable logic controllers. IC Role / Device Role / Timing Role: High-impedance disconnect switch placed between sensor signal line and conditioning circuitry; fails open on overvoltage. Use Value: Guaranteed -1 µA IDSS at -30 V VDS prevents leakage-induced offset errors in precision 24-bit ADC front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LW-7 | RDS(on) = 0.085 Ω @ -4.5 V; slightly higher gate charge (16 nC); same SOT-23 package. | Marginally higher conduction loss at 2.5 A; suitable where gate drive strength exceeds 10 mA peak. | Select if prioritizing second-source availability over minimal RDS(on) improvement. |
| AO3401 | RDS(on) = 0.085 Ω @ -4.5 V; VGS(th) = -0.7 to -1.3 V; higher IDSS leakage (-5 µA). | Lower threshold eases turn-on but increases risk of partial conduction near 0 V; less suitable for precise off-state isolation. | Prefer for cost-sensitive consumer designs where leakage tolerance >1 µA is acceptable. |
Compared with DMN2053LW-7 and AO3401, SI2307BDS-T1-BE3 offers the lowest RDS(on) at -4.5 V (0.130 Ω), tighter VGS(th) distribution (-1.0 to -3.0 V), and lowest IDSS (-1 µA), making it optimal for precision power gating and low-quiescent-current systems.
Availability
SI2307BDS-T1-BE3 is available at Aetrix Electronics and suitable for battery management, USB power delivery, and industrial sensor interface applications requiring stable component supply, RoHS-compliant packaging, and verified thermal performance on FR4 PCBs.
Supply support for SI2307BDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and resistive solutions for power, sensing, and signal conditioning.
The Si2307BDS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET family, engineered for space-constrained, low-voltage power switching in portable and industrial equipment where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for SI2307BDS-T1-BE3 at 70 °C ambient temperature?
The SI2307BDS-T1-BE3 supports -2.6 A continuous drain current at TA = 70 °C when mounted on an FR4 board with ≤5 s pulse width limitation. This derating reflects thermal limits imposed by RthJA = 100 °C/W and maximum junction temperature of 150 °C. Designers must verify board copper area and airflow to sustain this current reliably in end equipment.
Does SI2307BDS-T1-BE3 have a built-in body diode, and what is its forward voltage?
Yes, SI2307BDS-T1-BE3 includes an integrated body diode with forward voltage VSD = -0.85 to -1.2 V at IS = -0.75 A and VGS = 0 V. This diode enables freewheeling current paths in DC-DC converters and reverse-polarity protection without external components, and its characteristics are fully characterized across -55 to 150 °C.
Is SI2307BDS-T1-BE3 compatible with 3.3 V logic-level gate drive?
Yes, SI2307BDS-T1-BE3 is explicitly characterized for operation at VGS = -4.5 V, delivering RDS(on) = 0.130 Ω at ID = -2.5 A. With VGS(th) spanning -1.0 to -3.0 V, it reliably turns on using 3.3 V microcontroller outputs referenced to source, eliminating need for gate drivers in most portable applications.
What is the gate charge (Qg) specification for SI2307BDS-T1-BE3, and why does it matter?
The SI2307BDS-T1-BE3 has total gate charge Qg = 9–15 nC at VDS = -15 V and VGS = -10 V. This value directly impacts switching speed and driver power consumption: lower Qg allows faster transitions with smaller gate drivers, reducing dynamic losses in high-frequency PWM applications like DC-DC converters.
How does the thermal resistance RthJA of SI2307BDS-T1-BE3 affect PCB layout?
The SI2307BDS-T1-BE3 has maximum RthJA = 100 °C/W, meaning each watt of dissipated power raises junction temperature by up to 100 °C above ambient. To maintain TJ ≤ 150 °C at 0.75 W loss, ambient must stay below 75 °C - achievable only with ≥100 mm² of 2-oz copper pour under the SOT-23 pad, per Vishay Application Note 826 recommendations.
SI2307BDS-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 78mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2307BDS-T1-BE3 FAQ
1.How can I place an order for SI2307BDS-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2307BDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2307BDS-T1-BE3 reliable?
The price and inventory of SI2307BDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2307BDS-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI2307BDS-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2307BDS-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2307BDS-T1-BE3?
SI2307BDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2307BDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2307BDS-T1-BE3?
For technical support, including SI2307BDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2307BDS-T1-BE3 requirements.
6.How does Aetrix verify that SI2307BDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI2307BDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2307BDS-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI2307BDS-T1-BE3?
All SI2307BDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2307BDS-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2307BDS-T1-BE3 part is unused and in its original packaging.
Return procedure for SI2307BDS-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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