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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2308DS-T1-E3

Name: SI2308DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2308DS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2308DS-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2308DS-T1-E3.pdf

Description:: MOSFET N-CH 60V 2A SOT23-3

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Product details

Overview

SI2308DS-T1-E3 from Vishay Siliconix is an N-channel enhancement-mode TrenchFET® power MOSFET rated for 60 V drain-source voltage, 2.0 A continuous drain current at 25 °C, and 0.16 Ω R_DS(on) at V_GS = 10 V. It operates in SOT-23 (TO-236) package and serves as a low-side load switch in DC-DC converters, LED drivers, and battery protection circuits.

For engineers reviewing the SI2308DS-T1-E3 datasheet, SI2308DS-T1-E3 pinout, SI2308DS-T1-E3 application, or SI2308DS-T1-E3 equivalent, key selection criteria include its 60 V V_DS, 0.22 Ω R_DS(on) at 4.5 V gate drive, 100 % R_g tested qualification, halogen-free Pb-free construction, and thermal resistance of 100 °C/W (R_thJA).

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage range (1.5–3.0 V) supports logic-level drive from 3.3 V and 5 V microcontrollers, while the 4.8–10 nC total gate charge enables efficient operation in high-frequency PWM applications up to several hundred kHz.

The device integrates a body diode with 0.77–1.2 V forward voltage at 1 A, enabling synchronous rectification or freewheeling paths. Absolute maximum ratings include ±20 V gate-source voltage, 150 °C junction temperature, and 10 A pulsed drain current - all validated under surface-mount conditions on FR4 board per Vishay Document 70797 Rev. D.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports input rails up to 48 V systems with margin for transients.
R_DS(on) @ V_GS = 10 V	0.16 Ω max - Enables <160 mW conduction loss at 1 A continuous current.
R_DS(on) @ V_GS = 4.5 V	0.22 Ω max - Ensures reliable turn-on with standard 3.3 V GPIO or LDO outputs.
I_D (continuous, T_A = 25 °C)	2.0 A - Suitable for compact point-of-load switching without forced airflow.
Q_g	4.8–10 nC - Low gate charge reduces driver power and enables >500 kHz switching.
R_thJA	100 °C/W - Requires minimal copper area (≥100 mm²) for thermal management at full load.
V_GS(th)	1.5–3.0 V - Compatible with TTL/CMOS logic thresholds and avoids unintended turn-on.

Pinout & Package

SI2308DS-T1-E3 is housed in a TO-236 (SOT-23) plastic surface-mount package with gull-wing leads, optimized for automated assembly and space-constrained PCB layouts. The package measures 2.9 mm × 1.3 mm × 1.0 mm and features a thermally enhanced drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V swing and drives 4.8–10 nC total charge.
2 (Source)	Reference node	Common return path for load current and gate drive reference; tied to system ground in low-side configuration.
3 (Drain)	Power output	Connects to load or higher-potential rail; carries full switched current and dissipates I²R losses.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers lower R_DS(on) per die area than planar MOSFETs, improving power density in SOT-23 footprint.
100 % R_g tested	Ensures gate resistance between 0.5–3.3 Ω across production lot, critical for consistent switching timing.
Halogen-free & Pb-free	Meets IEC 61249-2-21 and RoHS Directive 2011/65/EU; marking code "A8" identifies Si2308DS variant.
Low Q_gd/Q_gs ratio	Gate-drain charge (1.0 nC) is 1.25× gate-source charge (0.8 nC), supporting stable hard-switching behavior.

Applications

DC-DC Buck Converter	LED Backlight Driver
Use Scenario: Step-down regulation from 12 V or 24 V input to 3–5 V for display backlighting. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >92 % efficiency at 1 A output due to 0.22 Ω R_DS(on) at 4.5 V gate drive and low Q_g.	Use Scenario: Constant-current switching control for white LED strings in automotive instrument clusters. IC Role / Device Role / Timing Role: PWM-controlled current sink switching element in boost or buck-boost LED driver IC feedback path. Use Value: Withstands 60 V transients during load dump; 150 °C T_J rating ensures reliability in sealed enclosures.
Battery Protection Circuit	USB Power Switch
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs (up to 4.2 V). IC Role / Device Role / Timing Role: Primary discharge FET controlled by protection IC to interrupt fault current within microseconds. Use Value: 10 A pulsed drain rating allows safe interruption of >5 A faults; low R_DS(on) minimizes voltage drop during normal operation.	Use Scenario: Hot-swap and overcurrent protection for USB 2.0/3.0 downstream ports in docking stations. IC Role / Device Role / Timing Role: Load switch isolating VBUS from peripheral devices during insertion/removal or fault events. Use Value: 2.0 A continuous rating meets USB BC 1.2 charging spec; SOT-23 footprint saves board space vs. larger SO-8 alternatives.

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: Step-down regulation from 12 V or 24 V input to 3–5 V for display backlighting.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >92 % efficiency at 1 A output due to 0.22 Ω R_DS(on) at 4.5 V gate drive and low Q_g.

Use Scenario: Constant-current switching control for white LED strings in automotive instrument clusters.

IC Role / Device Role / Timing Role: PWM-controlled current sink switching element in boost or buck-boost LED driver IC feedback path.

Use Value: Withstands 60 V transients during load dump; 150 °C T_J rating ensures reliability in sealed enclosures.

Battery Protection Circuit

USB Power Switch

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs (up to 4.2 V).

IC Role / Device Role / Timing Role: Primary discharge FET controlled by protection IC to interrupt fault current within microseconds.

Use Value: 10 A pulsed drain rating allows safe interruption of >5 A faults; low R_DS(on) minimizes voltage drop during normal operation.

Use Scenario: Hot-swap and overcurrent protection for USB 2.0/3.0 downstream ports in docking stations.

IC Role / Device Role / Timing Role: Load switch isolating VBUS from peripheral devices during insertion/removal or fault events.

Use Value: 2.0 A continuous rating meets USB BC 1.2 charging spec; SOT-23 footprint saves board space vs. larger SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UVT-7	20 V V_DS, 0.045 Ω R_DS(on) @ 4.5 V, SOT-563 package (smaller, dual)	Limited to ≤20 V systems; not suitable for 48 V input or battery protection above 12 V.	Select when lower R_DS(on) and dual-channel integration are prioritized over voltage rating.
AO3400	30 V V_DS, 0.026 Ω R_DS(on) @ 10 V, same SOT-23 package but higher leakage (1 µA IDSS)	Insufficient V_DS margin for industrial 24 V or automotive 12 V transient environments.	Choose only for cost-sensitive 3.3/5 V logic-driven loads where 30 V rating is sufficient.

Compared with DMN2053UVT-7 and AO3400, SI2308DS-T1-E3 provides the highest V_DS rating (60 V) in SOT-23, making it uniquely suitable for 48 V intermediate bus, battery cutoff, and robust industrial switching where voltage margin and thermal stability are critical.

Availability

SI2308DS-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, LED drivers, battery protection circuits, and USB power switches requiring stable component supply, RoHS-compliant sourcing, and lead-free assembly compatibility.

Supply support for SI2308DS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si2308DS product line delivers high-voltage, low-R_DS(on) N-channel MOSFETs in ultra-small SOT-23 packages for space-constrained power management in portable, automotive, and industrial equipment.

FAQ

What is the maximum continuous drain current for SI2308DS-T1-E3 at 70 °C ambient temperature?

The SI2308DS-T1-E3 supports 1.6 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-23 package with 100 °C/W junction-to-ambient resistance. At higher ambient temperatures or with limited PCB copper, further current reduction may be required to maintain T_J ≤ 150 °C. SI2308DS-T1-E3 must be mounted on FR4 with recommended pad layout per Vishay Document 70797.

Does SI2308DS-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, SI2308DS-T1-E3 includes an integrated source-drain body diode with typical forward voltage of 0.77 V and maximum of 1.2 V at I_S = 1 A and V_GS = 0 V. This diode enables freewheeling in inductive loads and synchronous rectification in buck converters. Its reverse recovery time is not characterized in the datasheet, so SI2308DS-T1-E3 is not recommended for high-frequency reverse-recovery-critical topologies like active clamp flyback.

Is SI2308DS-T1-E3 compatible with 3.3 V microcontroller GPIOs for gate driving?

Yes, SI2308DS-T1-E3 has a gate threshold voltage range of 1.5–3.0 V and achieves 0.22 Ω R_DS(on) at V_GS = 4.5 V, ensuring full enhancement with 3.3 V logic levels. However, for lowest R_DS(on) and minimal conduction loss, a 5 V gate drive is preferred. SI2308DS-T1-E3 does not require external level shifting when driven directly from 3.3 V MCU pins with adequate current capability.

What is the meaning of the "-E3" suffix in SI2308DS-T1-E3?

The "-E3" suffix in SI2308DS-T1-E3 indicates lead (Pb)-free termination per JEDEC J-STD-020, with matte tin plating over copper leads. It is RoHS-compliant and qualified for reflow soldering per IPC/JEDEC J-STD-020. This differs from the "-T1" base part (non-Pb-free) and "-GE3" variant (Pb-free + halogen-free). SI2308DS-T1-E3 is marked "A8" on the top surface.

How does the thermal performance of SI2308DS-T1-E3 compare between FR4 and metal-core PCBs?

SI2308DS-T1-E3's R_thJA is specified as 100 °C/W on FR4 (t ≤ 5 s), but no official data is provided for metal-core boards. In practice, mounting on aluminum-backed PCBs can reduce R_thJA to ~40–60 °C/W depending on copper area and thermal interface. For designs exceeding 1.25 W dissipation, thermal simulation and prototype validation are required. SI2308DS-T1-E3's junction-to-case resistance is not published, limiting precise multi-layer thermal modeling.

SI2308DS-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2308DS-T1-E3 FAQ

1.How can I place an order for SI2308DS-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2308DS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2308DS-T1-E3 reliable?

The price and inventory of SI2308DS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2308DS-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI2308DS-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2308DS-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2308DS-T1-E3?

SI2308DS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2308DS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2308DS-T1-E3?

For technical support, including SI2308DS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2308DS-T1-E3 requirements.

6.How does Aetrix verify that SI2308DS-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI2308DS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2308DS-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI2308DS-T1-E3?

All SI2308DS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2308DS-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2308DS-T1-E3 part is unused and in its original packaging.

Return procedure for SI2308DS-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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