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Vishay Siliconix SI2314EDS-T1-E3
- Part No.:
- SI2314EDS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2314EDS-T1-E3.pdf
- Description:
- MOSFET N-CH 20V 3.77A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:92,880
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Product details
Overview
SI2314EDS-T1-E3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET in SOT-23 (TO-236) package, with RDS(on) = 0.033 Ω at VGS = 4.5 V, 4.9 A continuous drain current, 3000 V ESD protection, and halogen-free construction. It serves as a low-side load switch or battery protection switch in portable Li-ion power systems.
For engineers reviewing the SI2314EDS-T1-E3 datasheet, SI2314EDS-T1-E3 pinout, SI2314EDS-T1-E3 application, or SI2314EDS-T1-E3 equivalent, key selection criteria include gate threshold voltage (0.45–0.95 V), junction-to-foot thermal resistance (40–50 °C/W), avalanche energy rating (11.25 mJ), and SOT-23 footprint compatibility for space-constrained PCB layouts.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge (Qg = 11.0–14.0 nC). Its 20-V VDS rating and 1.8-V logic-level gate drive support direct interfacing with microcontrollers and battery management ICs.
The device integrates a body diode with VSD = 0.8–1.2 V at IS = 1.0 A and exhibits normalized RDS(on) stability across –55 °C to 150 °C, enabling reliable operation in handheld and wearable electronics environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports single-cell Li-ion (up to 4.2 V) and dual-cell alkaline/nickel-based battery rails |
| RDS(on) | 0.033 Ω at VGS = 4.5 V - enables <165 mW conduction loss at 4.9 A, reducing thermal stress in compact layouts |
| ID (continuous) | 4.9 A at TA = 25 °C - sufficient for USB-powered peripherals and battery protection FETs in 2–3 W systems |
| VGS(th) | 0.45–0.95 V - ensures turn-on with 1.8-V/2.5-V/3.3-V logic without level-shifting circuitry |
| EAS | 11.25 mJ - provides robustness against inductive switching transients in load-switch applications |
| Qg | 11.0–14.0 nC - enables sub-microsecond switching with standard GPIO drivers (e.g., STM32, nRF52) |
| TJ range | –55 to +150 °C - qualified for industrial and extended-temperature consumer use cases |
Pinout & Package
Package: SOT-23 (TO-236), surface-mount, 3-lead, 2.80 × 2.10 mm footprint with 0.95 mm lead pitch. Thermal performance optimized via low RthJF (40–50 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; accepts 0–12 V gate-source bias; 1.5 µA leakage max at ±4.5 V |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to system ground or battery negative |
| 3 (D) | Drain | High-side or low-side power path connection; handles up to 15 A pulsed current |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30% lower RDS(on) vs. planar MOSFETs of same die size, improving power density in SOT-23 |
| 3000 V HBM ESD rating | Eliminates need for external ESD protection in battery interface circuits during assembly and field use |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal or electrical performance |
| Logic-level gate drive | Turns fully on at VGS ≥ 2.5 V, enabling direct drive from low-voltage MCUs and PMICs |
| Low Qgd/Qgs ratio | Qgd = 2.1 nC, Qgs = 1.5 nC - reduces Miller-induced shoot-through risk in high-frequency switching |
Applications
| Battery Protection Circuit | USB Load Switch |
|---|---|
Use Scenario: Integrated into Li-ion pack protection IC (e.g., DW01A) to disconnect cell during overcurrent or short-circuit events. IC Role / Device Role / Timing Role: Low-side switch controlling discharge path; activated within <100 µs after fault detection. Use Value: 0.033 Ω RDS(on) limits voltage drop to <160 mV at 4.9 A, preserving protection IC sensing accuracy and minimizing heat generation. | Use Scenario: Enables/disables 5 V USB power rail to peripheral modules (e.g., Bluetooth, sensors) under MCU control. IC Role / Device Role / Timing Role: High-efficiency load switch with fast turn-on (td(on) = 0.53–0.8 µs) and low quiescent current. Use Value: 1.25 W power dissipation rating at 25 °C ambient allows sustained 4.9 A delivery without heatsinking on standard FR4. |
| Power Bank Output Stage | Wearable Device Power Management |
Use Scenario: Controls output to USB-A port in portable power banks, supporting up to 10 W charging loads. IC Role / Device Role / Timing Role: Primary power path switch; coordinated with buck-boost controller for voltage regulation. Use Value: Avalanche energy rating (11.25 mJ) absorbs inductive kickback from cable insertion/removal transients without failure. | Use Scenario: Isolates sensor subsystems (e.g., IMU, HRM) from main SoC to reduce standby current in smartwatches and hearables. IC Role / Device Role / Timing Role: Ultra-low-leakage (IDSS ≤ 1 µA at 20 V) power gate enabling sub-µA sleep modes. Use Value: Gate-threshold distribution (0.45–0.95 V) ensures consistent turn-on across temperature and process variation, critical for battery life predictability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2014LSD-13 | RDS(on) = 0.027 Ω @ 4.5 V (lower), but VGS(th) = 0.5–1.2 V (wider spread); SOT-23-3 package identical | Higher conduction efficiency at full load, but less predictable turn-on at marginal gate voltages | Prefer DMN2014LSD-13 when optimizing for lowest possible I²R loss above 3 A; retain SI2314EDS-T1-E3 for tighter VGS(th) control in 1.8–2.5 V drive systems |
| AO3400 | RDS(on) = 0.026 Ω @ 4.5 V, but no specified avalanche rating; ESD rating = 1000 V HBM (lower) | Lacks ruggedness for battery fault interruption; suitable only for benign load-switching | Choose AO3400 only in cost-sensitive, non-safety-critical applications where transient immunity is not required |
Compared with DMN2014LSD-13 and AO3400, SI2314EDS-T1-E3 offers the best balance of low gate-threshold consistency, certified avalanche capability, and 3000 V ESD protection-making it preferred for battery protection and portable power systems requiring field reliability.
Availability
SI2314EDS-T1-E3 is available at Aetrix Electronics and suitable for Li-ion battery protection, USB load switching, and wearable device power gating requiring stable component supply and long-term manufacturing continuity.
Supply support for SI2314EDS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and consumer markets.
The Si2314EDS product line delivers logic-level, low-RDS(on) N-channel MOSFETs in ultra-compact SOT-23 packages for space- and efficiency-constrained portable electronics and battery management systems.
FAQ
What is the maximum continuous drain current for SI2314EDS-T1-E3 at 70 °C ambient temperature?
The SI2314EDS-T1-E3 supports 3.9 A continuous drain current at TA = 70 °C, derated from 4.9 A at 25 °C due to thermal limitations. This value assumes surface mounting on a 1" × 1" FR4 board per Vishay's test conditions. The actual achievable current depends on PCB copper area, airflow, and adjacent heat sources. SI2314EDS-T1-E3 must be operated within its safe operating area (SOA) curve to avoid thermal runaway.
Does SI2314EDS-T1-E3 have a specified avalanche energy rating?
Yes, SI2314EDS-T1-E3 has a single-pulse avalanche energy rating of 11.25 mJ with L = 0.1 mH, verified by design and guaranteed per Vishay's specification document 71611. This rating applies to unclamped inductive switching events and supports robust operation in battery protection circuits where sudden load disconnection generates voltage spikes. SI2314EDS-T1-E3 is not rated for repetitive avalanche operation.
What is the gate threshold voltage range for SI2314EDS-T1-E3, and how does it affect logic-level drive?
The gate threshold voltage (VGS(th)) for SI2314EDS-T1-E3 is specified from 0.45 V to 0.95 V at ID = 250 µA. This narrow, low-range threshold ensures reliable turn-on with 1.8 V, 2.5 V, and 3.3 V microcontroller outputs without external level shifting. SI2314EDS-T1-E3 achieves full enhancement (RDS(on) ≤ 0.051 Ω) at VGS ≥ 1.8 V, making it suitable for modern ultra-low-power systems.
Is SI2314EDS-T1-E3 halogen-free and RoHS-compliant?
Yes, SI2314EDS-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (2011/65/EU). The "-E3" suffix explicitly denotes lead-free and halogen-free construction. Vishay confirms this compliance in document 71611, Rev. D. SI2314EDS-T1-E3 uses matte tin lead finish and halogen-free molding compound, with full material declarations available upon request.
What is the thermal resistance from junction to foot (RthJF) for SI2314EDS-T1-E3, and why is it important?
The junction-to-foot thermal resistance (RthJF) for SI2314EDS-T1-E3 is 40–50 °C/W under steady-state conditions. This parameter reflects heat transfer from the silicon die directly to the PCB copper pad beneath the exposed drain tab-critical for SOT-23 devices where the drain connects internally to the leadframe. A low RthJF enables higher power handling without thermal vias, and SI2314EDS-T1-E3 leverages this for efficient heat sinking in compact battery packs.
SI2314EDS-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.77A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 33mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2314EDS-T1-E3 FAQ
1.How can I place an order for SI2314EDS-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2314EDS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2314EDS-T1-E3 reliable?
The price and inventory of SI2314EDS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2314EDS-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI2314EDS-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2314EDS-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2314EDS-T1-E3?
SI2314EDS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2314EDS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2314EDS-T1-E3?
For technical support, including SI2314EDS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2314EDS-T1-E3 requirements.
6.How does Aetrix verify that SI2314EDS-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI2314EDS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2314EDS-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI2314EDS-T1-E3?
All SI2314EDS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2314EDS-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2314EDS-T1-E3 part is unused and in its original packaging.
Return procedure for SI2314EDS-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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