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Vishay Siliconix SI2315BDS-T1-E3
- Part No.:
- SI2315BDS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2315BDS-T1-E3.pdf
- Description:
- MOSFET P-CH 12V 3A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:46,177
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Product details
Overview
SI2315BDS-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage logic-level gate drive, with -12 V VDS, 0.050 Ω RDS(on) at -4.5 V VGS, -3.85 A continuous drain current, and SOT-23 (TO-236) package. It serves as a load switch or reverse-polarity protection device in portable power management circuits.
For engineers reviewing the SI2315BDS-T1-E3 datasheet, SI2315BDS-T1-E3 pinout, SI2315BDS-T1-E3 application, or SI2315BDS-T1-E3 equivalent, key selection criteria include guaranteed RDS(on) down to -1.8 V VGS, ±8 V gate rating, RoHS-compliant lead-free termination, and thermal resistance of 130 °C/W (steady-state junction-to-ambient).
Technical Context
This P-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance with sub-2-V logic-compatible gate threshold. Its -0.45 V to -0.90 V VGS(th) enables reliable turn-on from 1.8 V and 2.5 V microcontroller I/O rails.
The device integrates an intrinsic body diode with -1.2 V forward voltage at -1.6 A, supporting synchronous rectification and bidirectional current paths in compact DC/DC converters and battery protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for 3.3 V and lower system rail protection |
| RDS(on) @ VGS = -4.5 V | 0.050 Ω - Enables <190 mW conduction loss at 3.85 A, suitable for high-efficiency load switching |
| ID Continuous (TA = 25 °C) | -3.85 A - Supports USB-powered peripherals and single-cell Li-ion load control without heatsinking |
| VGS(th) | -0.45 to -0.90 V - Ensures robust turn-on with 1.8 V logic, eliminating need for gate boosters |
| Qg | 8–15 nC - Low gate charge enables fast switching (<75 ns off-time) with minimal driver power demand |
| RthJA (Steady State) | 130 °C/W - Defines thermal derating curve for PCB layout on FR4; requires ≥25 mm² copper pour for full current |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3 leads, 1.12 mm max height, and JEDEC-standard footprint. Designed for reflow soldering on FR4 boards per Vishay's recommended pad layout (Document 72609).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Accepts logic-level voltage; threshold centered at -0.68 V; ±8 V absolute max rating prevents ESD damage |
| 2 (Source) | Reference node | Connected to higher potential rail in high-side switch configuration; body diode anode |
| 3 (Drain) | Power output | Connected to load; exposed drain pad (pin 3) provides primary thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| 1.8 V gate-rated operation | Guaranteed RDS(on) ≤ 0.100 Ω at VGS = -1.8 V supports direct interface with ultra-low-voltage MCUs |
| TrenchFET® silicon process | Delivers 20% lower RDS(on) vs. planar P-channel MOSFETs in same SOT-23 footprint |
| Lead (Pb)-free and RoHS-compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1; compatible with standard SnPb and Pb-free reflow profiles |
| Halogen-free option available | Si2315BDS-T1-GE3 variant satisfies IEC 61249-2-21 requirements for bromine/chlorine content |
Applications
| USB Power Switching | Li-ion Battery Protection |
|---|---|
|
Use Scenario: Controlling 5 V USB VBUS power delivery to downstream peripherals in portable hubs. IC Role / Device Role / Timing Role: High-side P-channel load switch enabling/disabling power with <1 µA quiescent current when off. Use Value: Prevents backfeed and inrush during hot-plug; RDS(on) ensures <200 mV drop at 2 A, preserving bus voltage compliance. |
Use Scenario: Reverse-polarity and over-discharge protection in single-cell Li-ion packs for wearables. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing bidirectional blocking and controlled discharge cutoff. Use Value: -0.9 V VGS(th) allows precise enable/disable via battery monitor IC; low Qg minimizes switching loss during protection events. |
| Low-Voltage Logic-Level Switching | DC/DC Converter Synchronous Rectifier |
|
Use Scenario: Enabling 1.8 V or 2.5 V supply rails in FPGA or SoC power domains. IC Role / Device Role / Timing Role: Logic-controlled high-side switch with fast turn-on (<20 ns) and no external level-shifting required. Use Value: Gate threshold guarantees full enhancement at 1.8 V I/O, reducing BOM count and board space versus discrete driver solutions. |
Use Scenario: Secondary-side synchronous rectification in isolated 3.3 V output flyback converters. IC Role / Device Role / Timing Role: Body diode conducts freewheeling current until actively turned on by controller; VSD = -1.2 V limits conduction loss. Use Value: Low RDS(on) and Ciss = 715 pF support >500 kHz operation while maintaining ZVS capability and efficiency >92%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012UW-7 | RDS(on) = 0.075 Ω @ -2.5 V VGS; slightly higher gate charge (17 nC); same SOT-23 package | Marginally lower efficiency at 2.5 V drive; identical thermal profile and PCB footprint | Preferred where Vishay second-source assurance is required; validated for same USB and battery protection use cases |
| AO3401 | RDS(on) = 0.085 Ω @ -2.5 V VGS; VGS(th) = -0.7 to -1.3 V; higher leakage (IDSS = -5 µA) | Less consistent turn-on below 2.5 V; may require gate pull-up resistor for reliable 1.8 V MCU interface | Select when cost sensitivity outweighs 1.8 V drive margin; verify VGS(th) distribution across temperature in final design |
Compared with DMG1012UW-7 and AO3401, SI2315BDS-T1-E3 delivers the lowest RDS(on) at 1.8 V gate drive and tightest VGS(th) distribution, making it optimal for space-constrained, ultra-low-voltage systems where conduction loss and gate drive simplicity are critical.
Availability
SI2315BDS-T1-E3 is available at Aetrix Electronics and suitable for USB power switching, Li-ion battery protection, and low-voltage logic-level switching requiring stable component supply and full RoHS compliance.
Supply support for SI2315BDS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.
The Si2315BDS belongs to Vishay's TrenchFET® logic-level P-channel MOSFET family, engineered specifically for energy-efficient, space-constrained power management in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for SI2315BDS-T1-E3 at 70 °C ambient?
The SI2315BDS-T1-E3 supports -2.45 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under natural convection; performance improves with PCB copper area or forced airflow. The SI2315BDS-T1-E3 maintains its -0.050 Ω RDS(on) up to TJ = 150 °C, ensuring predictable conduction loss across operating range.
Does SI2315BDS-T1-E3 support 1.8 V microcontroller GPIO direct drive?
Yes, SI2315BDS-T1-E3 is explicitly rated for 1.8 V gate drive, with guaranteed RDS(on) ≤ 0.100 Ω at VGS = -1.8 V and ID = -2.7 A. Its VGS(th) range of -0.45 V to -0.90 V ensures full enhancement even with worst-case MCU output voltage tolerance and temperature drift. No level shifter or gate driver is needed when interfacing with 1.8 V logic.
What is the thermal resistance junction-to-foot (RthJF) for SI2315BDS-T1-E3?
The SI2315BDS-T1-E3 has a maximum junction-to-foot (drain) thermal resistance of 75 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die to the exposed drain pad, which is soldered directly to PCB copper. Effective thermal design requires at least 25 mm² of 2-oz copper connected to pin 3 to realize this rating in practice.
Is SI2315BDS-T1-E3 halogen-free?
No, SI2315BDS-T1-E3 is lead-free and RoHS-compliant but not halogen-free. The halogen-free version is designated SI2315BDS-T1-GE3, which meets IEC 61249-2-21 for bromine and chlorine content. Both variants share identical electrical specifications and SOT-23 packaging; only material composition differs.
Can SI2315BDS-T1-E3 be used in reverse-polarity protection circuits?
Yes, SI2315BDS-T1-E3 is commonly deployed in reverse-polarity protection due to its P-channel topology and low RDS(on). When placed between input and load with source tied to input, it blocks reverse voltage while conducting forward current with minimal drop. Its -12 V VDS rating and -1.2 V body diode forward voltage make it suitable for 5 V and 3.3 V systems where input reversal must be blocked without significant voltage loss.
SI2315BDS-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 3.85A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 715 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2315BDS-T1-E3 FAQ
1.How can I place an order for SI2315BDS-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2315BDS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2315BDS-T1-E3 reliable?
The price and inventory of SI2315BDS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2315BDS-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI2315BDS-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2315BDS-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2315BDS-T1-E3?
SI2315BDS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2315BDS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2315BDS-T1-E3?
For technical support, including SI2315BDS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2315BDS-T1-E3 requirements.
6.How does Aetrix verify that SI2315BDS-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI2315BDS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2315BDS-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI2315BDS-T1-E3?
All SI2315BDS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2315BDS-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2315BDS-T1-E3 part is unused and in its original packaging.
Return procedure for SI2315BDS-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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