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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2316BDS-T1-BE3

Name: SI2316BDS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2316BDS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2316BDS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2316BDS-T1-BE3.pdf

Description:: N-CHANNEL 30-V (D-S) MOSFET

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Product details

Overview

SI2316BDS-T1-BE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SOT-23 package, optimized for PWM switching with R_DS(on) = 0.050 Ω at V_GS = 10 V, 4.5-A continuous drain current, and 3.16-nC total gate charge - used in battery switch and DC/DC converter circuits.

For engineers reviewing the SI2316BDS-T1-BE3 datasheet, SI2316BDS-T1-BE3 pinout, SI2316BDS-T1-BE3 application, or SI2316BDS-T1-BE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, thermal resistance (R_thJA ≤ 100 °C/W), body diode recovery (t_rr = 10–15 ns), and halogen-free RoHS-compliant construction.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching. Its gate threshold voltage (V_GS(th) = 1–3 V) supports logic-level drive, while the 3.16-nC Q_g at 4.5 V enables efficient PWM operation in space-constrained DC/DC stages.

The device integrates a source-drain body diode with V_SD = 0.8–1.2 V at 2.0 A and t_rr = 10–15 ns, enabling synchronous rectification or freewheeling in buck converters without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24-V system rails and transient margin
R_DS(on)	0.050 Ω @ V_GS = 10 V - ensures <100 mW conduction loss at 4.5 A in compact layouts
I_D (continuous)	3.9 A @ T_A = 25 °C - supports high-current battery-switch duty on standard FR4 PCBs
Q_g	3.16 nC @ V_GS = 4.5 V - enables fast turn-on with minimal driver power in 3.3-V control systems
t_rr	10–15 ns - reduces switching losses and EMI during body-diode commutation in buck topologies
R_thJA	≤ 100 °C/W - defines thermal derating limit for ambient-operated SOT-23 designs without heatsink
V_GS(th)	1–3 V - guarantees reliable enhancement-mode turn-on with 3.3-V or 5-V microcontroller GPIO

Pinout & Package

SOT-23 (TO-236) surface-mount package: 3-pin, 1.12 mm max height, 2.80–3.04 mm length, 2.10–2.64 mm width, 0.95 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts 0–20 V drive; 2.6–3.9 Ω gate resistance limits ringing and EMI
2 (Source)	Reference node	Common return path for load current and gate drive; ties to ground or low-side reference
3 (Drain)	Power output	Connects to switched load or inductor node; thermally coupled to PCB copper via exposed drain pad

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.050 Ω R_DS(on) in SOT-23 - highest power density among 30-V logic-level MOSFETs in this footprint
PWM-optimized gate charge	3.16 nC at 4.5 V - minimizes driver IC loading and propagation delay in high-frequency (>500 kHz) converters
100 % R_g tested	Guarantees gate resistance between 2.6–3.9 Ω - ensures consistent rise/fall times across production lots
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and export compliance

Applications

Battery Protection Switch	DC/DC Buck Converter
Use Scenario: High-side or low-side switching of Li-ion battery packs in portable medical devices and wearables. IC Role / Device Role: Load switch controlling power delivery between battery and system rail. Use Value: Low 0.050 Ω R_DS(on) limits voltage drop and self-heating during 3–4 A discharge, extending runtime and thermal safety margin.	Use Scenario: Synchronous rectifier in 12-V input to 3.3-V/5-V step-down converter for FPGA or MCU power supplies. IC Role / Device Role: Low-side power switch replacing Schottky diode to reduce conduction loss. Use Value: Body diode t_rr = 10–15 ns and low Q_g enable clean commutation at 1 MHz, cutting diode loss by >60 % vs. discrete diode solution.
USB Power Delivery Switch	Load Switch in IoT Sensor Node
Use Scenario: Inrush-limited 5-V USB port power switch with overcurrent detection feedback. IC Role / Device Role: Controlled pass element with fast turn-off for fault isolation. Use Value: 20-A pulsed ID capability and 3.16-nC Q_g allow rapid gate control using small-signal drivers, supporting <10 µs fault response.	Use Scenario: Power gating of BLE radio and environmental sensors in battery-powered edge nodes. IC Role / Device Role: Low-quiescent current load switch enabling deep sleep mode. Use Value: V_GS(th) = 1–3 V ensures full enhancement with 1.8-V or 3.3-V MCU I/O, eliminating level-shifter need and reducing BOM count.

Battery Protection Switch

DC/DC Buck Converter

Use Scenario: High-side or low-side switching of Li-ion battery packs in portable medical devices and wearables.

IC Role / Device Role: Load switch controlling power delivery between battery and system rail.

Use Value: Low 0.050 Ω R_DS(on) limits voltage drop and self-heating during 3–4 A discharge, extending runtime and thermal safety margin.

Use Scenario: Synchronous rectifier in 12-V input to 3.3-V/5-V step-down converter for FPGA or MCU power supplies.

IC Role / Device Role: Low-side power switch replacing Schottky diode to reduce conduction loss.

Use Value: Body diode t_rr = 10–15 ns and low Q_g enable clean commutation at 1 MHz, cutting diode loss by >60 % vs. discrete diode solution.

USB Power Delivery Switch

Load Switch in IoT Sensor Node

Use Scenario: Inrush-limited 5-V USB port power switch with overcurrent detection feedback.

IC Role / Device Role: Controlled pass element with fast turn-off for fault isolation.

Use Value: 20-A pulsed ID capability and 3.16-nC Q_g allow rapid gate control using small-signal drivers, supporting <10 µs fault response.

Use Scenario: Power gating of BLE radio and environmental sensors in battery-powered edge nodes.

IC Role / Device Role: Low-quiescent current load switch enabling deep sleep mode.

Use Value: V_GS(th) = 1–3 V ensures full enhancement with 1.8-V or 3.3-V MCU I/O, eliminating level-shifter need and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UVT-7	R_DS(on) = 0.045 Ω @ 4.5 V, but 20-V V_DS rating - lower voltage headroom	Not suitable for 24-V battery systems due to 20-V max rating	Select only for 5–12-V logic-level applications where lower R_DS(on) outweighs voltage limitation
AO3400	R_DS(on) = 0.042 Ω @ 10 V, but no guaranteed R_g test or halogen-free certification	Lacks documented thermal performance data for ambient derating above 70 °C	Prefer for cost-sensitive consumer designs where full industrial qualification is not required

Compared with DMN2053UVT-7 and AO3400, SI2316BDS-T1-BE3 provides verified 30-V blocking, guaranteed gate resistance, and halogen-free compliance - making it the preferred choice for industrial battery management and regulated DC/DC where reliability and regulatory alignment are critical.

Availability

SI2316BDS-T1-BE3 is available at Aetrix Electronics and suitable for battery protection switches, DC/DC buck converters, and USB power delivery circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI2316BDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si2316BDS belongs to Vishay's TrenchFET® logic-level MOSFET product line, engineered for high-efficiency, low-voltage switching in space-constrained portable and embedded power systems.

FAQ

What is the maximum continuous drain current for SI2316BDS-T1-BE3 at 70 °C ambient temperature?

The SI2316BDS-T1-BE3 supports 3.13 A continuous drain current at T_A = 70 °C when mounted on a standard 1" × 1" FR4 board. This value reflects thermal derating based on R_thJA = 100 °C/W and junction temperature limit of 150 °C. The device's 0.050 Ω R_DS(on) keeps self-heating low, allowing stable operation within this rating. Always verify layout copper area and airflow in final design.

Does SI2316BDS-T1-BE3 support 3.3-V logic-level gate drive?

Yes, SI2316BDS-T1-BE3 is fully compatible with 3.3-V logic-level drive: its V_GS(th) range is 1–3 V, and R_DS(on) is specified at 0.080 Ω with V_GS = 4.5 V and I_D = 3.3 A. At 3.3 V, typical R_DS(on) remains below 0.12 Ω, sufficient for moderate-current switching. SI2316BDS-T1-BE3 eliminates need for gate drivers in many low-power applications.

What is the thermal resistance from junction to ambient for SI2316BDS-T1-BE3?

The SI2316BDS-T1-BE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 100 °C/W under standard test conditions (≤5 s pulse, 1" × 1" FR4 board). Its typical R_thJA is 80 °C/W. This value assumes no additional heatsinking; PCB copper area directly impacts real-world performance. SI2316BDS-T1-BE3's drain-connected tab enhances thermal transfer to the board.

Is SI2316BDS-T1-BE3 halogen-free and RoHS compliant?

Yes, SI2316BDS-T1-BE3 is both halogen-free per IEC 61249-2-21 and RoHS compliant per Directive 2002/95/EC. The "-BE3" suffix explicitly denotes lead-free and halogen-free construction. This makes SI2316BDS-T1-BE3 suitable for environmentally regulated markets including EU, Japan, and China RoHS zones without material declaration exceptions.

What is the body diode reverse recovery time (t_rr) of SI2316BDS-T1-BE3?

The SI2316BDS-T1-BE3 body diode exhibits a reverse recovery time (t_rr) of 10–15 ns under test conditions of I_F = 2.0 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery supports high-frequency synchronous rectification and reduces switching loss in buck converters. SI2316BDS-T1-BE3's t_rr is confirmed in the official Vishay datasheet Document Number 70445.

SI2316BDS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.9A (Ta), 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta), 1.66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2316BDS-T1-BE3 FAQ

1.How can I place an order for SI2316BDS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2316BDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2316BDS-T1-BE3 reliable?

The price and inventory of SI2316BDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2316BDS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2316BDS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2316BDS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2316BDS-T1-BE3?

SI2316BDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2316BDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2316BDS-T1-BE3?

For technical support, including SI2316BDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2316BDS-T1-BE3 requirements.

6.How does Aetrix verify that SI2316BDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2316BDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2316BDS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2316BDS-T1-BE3?

All SI2316BDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2316BDS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2316BDS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2316BDS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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