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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2318DS-T1-E3

Name: SI2318DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2318DS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2318DS-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2318DS-T1-E3.pdf

Description:: MOSFET N-CH 40V 3A SOT23-3

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Product details

Overview

SI2318DS-T1-E3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Power MOSFET in SOT-23 package, delivering R_DS(on) = 0.045 Ω at V_GS = 10 V and 3.9 A continuous drain current at T_A = 25 °C. It serves as a compact load switch or stepper motor driver in space-constrained DC power paths.

For engineers reviewing the SI2318DS-T1-E3 datasheet, SI2318DS-T1-E3 pinout, SI2318DS-T1-E3 application, or SI2318DS-T1-E3 equivalent, key selection criteria include its 40-V V_DS, low gate charge (Q_g = 10–15 nC), thermal resistance (R_thJA = 100 °C/W max), integrated body diode (V_SD = 0.8–1.2 V), and Pb-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This discrete MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Q_gd = 2.1 nC and t_f = 15–25 ns. Its gate threshold voltage (V_GS(th) = 1–3 V) supports logic-level drive from 3.3 V or 5 V microcontrollers.

The device operates across -55 to +150 °C junction temperature range and features guaranteed R_DS(on) at both V_GS = 10 V (0.036–0.045 Ω) and V_GS = 4.5 V (0.045–0.058 Ω), enabling robust performance in battery-powered and industrial load-switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V DC systems with margin
R_DS(on) @ V_GS = 10 V	0.045 Ω - Enables ≤170 mW conduction loss at 3.9 A ambient operation
I_D Continuous @ T_A = 25 °C	3.9 A - Supports medium-power load switching without forced cooling
Q_g	10–15 nC - Low gate drive energy reduces controller loading and switching losses
V_GS(th)	1–3 V - Ensures reliable turn-on with standard logic-level GPIOs
T_J Range	-55 to +150 °C - Qualified for automotive under-hood and industrial control environments
R_thJA (steady-state)	166 °C/W - Requires minimal PCB copper area for thermal management on FR4

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3-pin configuration: Drain (Pin 1), Gate (Pin 2), Source (Pin 3). Standard marking code "C8" appears on top surface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (D)	Drain	Main high-side current path; thermally connected to exposed drain pad for heat dissipation
Pin 2 (G)	Gate	Control input requiring <15 nC total charge for full enhancement; sensitive to ESD
Pin 3 (S)	Source	Reference node for gate drive and current return; tied to system ground in low-side switch config

Key Features

Feature	Design Value
TrenchFET® Technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for efficient switching in portable and battery-fed systems
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21 for green electronics manufacturing
Low V_GS(th) tolerance	1–3 V range ensures consistent turn-on across temperature and process variation without external level-shifting
Integrated body diode	V_SD = 0.8–1.2 V enables freewheeling in inductive loads like stepper motors without external diode
Thermal footprint	Standard SOT-23 pad layout (per AN826) supports ≥0.75 W steady-state dissipation on 1" × 1" FR4 board

Applications

Stepper Motor Driver	Load Switch for 12 V Systems
Use Scenario: Driving unipolar or bipolar stepper motor phases in printer head positioning or CNC stage control. IC Role / Device Role / Timing Role: Low-side or high-side switching element controlling coil current flow and direction via H-bridge configuration. Use Value: R_DS(on) ≤ 0.058 Ω at 4.5 V gate drive minimizes I²R heating during sustained phase energization.	Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, actuators) in automotive body control units. IC Role / Device Role / Timing Role: Single-N MOSFET used in high-side or low-side configuration for controlled power rail sequencing. Use Value: 40 V rating accommodates load-dump transients up to 35 V while maintaining safe SOA margins.
USB-C Power Delivery Sink	Industrial PLC I/O Module
Use Scenario: Implementing overcurrent-protected VBUS switching in USB-C receptacle circuits compliant with USB PD 3.0. IC Role / Device Role / Timing Role: Load switch with fast turn-off (t_f ≤ 25 ns) to limit fault energy during short-circuit events. Use Value: Q_gd = 2.1 nC and low C_iss = 540 pF enable precise timing control with minimal gate driver overhead.	Use Scenario: Isolating field-side 24 V DC inputs/outputs in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in digital output stages. Use Value: -55 to +150 °C operating range and 16 A pulsed drain capability support long-term reliability in harsh industrial environments.

Stepper Motor Driver

Load Switch for 12 V Systems

Use Scenario: Driving unipolar or bipolar stepper motor phases in printer head positioning or CNC stage control.

IC Role / Device Role / Timing Role: Low-side or high-side switching element controlling coil current flow and direction via H-bridge configuration.

Use Value: R_DS(on) ≤ 0.058 Ω at 4.5 V gate drive minimizes I²R heating during sustained phase energization.

Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, actuators) in automotive body control units.

IC Role / Device Role / Timing Role: Single-N MOSFET used in high-side or low-side configuration for controlled power rail sequencing.

Use Value: 40 V rating accommodates load-dump transients up to 35 V while maintaining safe SOA margins.

USB-C Power Delivery Sink

Industrial PLC I/O Module

Use Scenario: Implementing overcurrent-protected VBUS switching in USB-C receptacle circuits compliant with USB PD 3.0.

IC Role / Device Role / Timing Role: Load switch with fast turn-off (t_f ≤ 25 ns) to limit fault energy during short-circuit events.

Use Value: Q_gd = 2.1 nC and low C_iss = 540 pF enable precise timing control with minimal gate driver overhead.

Use Scenario: Isolating field-side 24 V DC inputs/outputs in programmable logic controller backplanes.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in digital output stages.

Use Value: -55 to +150 °C operating range and 16 A pulsed drain capability support long-term reliability in harsh industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 0.025 Ω @ 10 V (lower), but V_DS = 30 V (reduced voltage margin)	Better efficiency in 5–12 V rails; unsuitable for 24 V transient-prone systems	Select when lower conduction loss is prioritized over 40 V rating
AO3400	R_DS(on) = 0.042 Ω @ 10 V (slightly lower), Q_g = 12 nC (comparable), no halogen-free option listed	Same SOT-23 footprint; lacks IEC 61249-2-21 halogen-free certification	Choose when halogen-free compliance is not required and cost sensitivity is higher

Compared with DMN3025LSD-13 and AO3400, the SI2318DS-T1-E3 provides superior voltage margin (40 V vs. 30 V/30 V), guaranteed halogen-free construction, and tighter V_GS(th) distribution-making it preferred for automotive and industrial designs requiring long-term regulatory compliance and transient robustness.

Availability

SI2318DS-T1-E3 is available at Aetrix Electronics and suitable for stepper motor drivers, 12 V load switches, and industrial PLC I/O modules requiring stable component supply and RoHS-compliant sourcing.

Supply support for SI2318DS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si2318DS belongs to Vishay's TrenchFET® Gen II family, engineered specifically for high-efficiency, low-voltage DC power switching in space-constrained applications where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI2318DS-T1-E3 at 70 °C ambient?

The SI2318DS-T1-E3 supports 2.4 A continuous drain current at T_A = 70 °C with derated power dissipation (P_D = 0.48 W). This value is specified in the Absolute Maximum Ratings table and reflects thermal limits of the SOT-23 package under natural convection on FR4. Designers must verify PCB copper area and airflow to sustain this current reliably in end equipment.

Does SI2318DS-T1-E3 have a specified avalanche rating?

No, the SI2318DS-T1-E3 datasheet does not specify rated unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS). It is not characterized or guaranteed for repetitive avalanche operation. For designs subject to inductive switching stress, external clamping (e.g., TVS diode or RC snubber) is recommended to protect the SI2318DS-T1-E3.

Is SI2318DS-T1-E3 compatible with lead-free reflow soldering profiles?

Yes, SI2318DS-T1-E3 is qualified for standard lead-free reflow per JEDEC J-STD-020. Its package and termination meet peak temperature requirements up to 260 °C for 20–40 seconds. The "T1-E3" suffix explicitly denotes lead-free (Pb-free) construction and compatibility with IPC-A-610 Class 2/3 assembly processes.

What is the typical gate-to-source leakage current for SI2318DS-T1-E3?

The SI2318DS-T1-E3 exhibits ±100 nA maximum gate-to-source leakage (I_GSS) at V_GS = ±20 V and T_J = 25 °C. This low leakage ensures minimal standby power draw and stable gate bias in high-impedance drive configurations, supporting reliable operation in always-on or low-power sleep-mode applications using the SI2318DS-T1-E3.

Can SI2318DS-T1-E3 be used in high-side switch configurations?

Yes, SI2318DS-T1-E3 can be used in high-side configuration, but requires gate drive voltage exceeding the source potential by ≥10 V (e.g., bootstrap or charge pump circuitry). Its V_GS rating of ±20 V and V_DS = 40 V allow safe operation with source voltages up to ~30 V when properly driven. Layout must minimize gate loop inductance to prevent oscillation during switching of the SI2318DS-T1-E3.

SI2318DS-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2318DS-T1-E3 FAQ

1.How can I place an order for SI2318DS-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2318DS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2318DS-T1-E3 reliable?

The price and inventory of SI2318DS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2318DS-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI2318DS-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2318DS-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2318DS-T1-E3?

SI2318DS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2318DS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2318DS-T1-E3?

For technical support, including SI2318DS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2318DS-T1-E3 requirements.

6.How does Aetrix verify that SI2318DS-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI2318DS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2318DS-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI2318DS-T1-E3?

All SI2318DS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2318DS-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2318DS-T1-E3 part is unused and in its original packaging.

Return procedure for SI2318DS-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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