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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2319DS-T1-BE3

Name: SI2319DS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2319DS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2319DS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2319DS-T1-BE3.pdf

Description:: P-CHANNEL 40-V (D-S) MOSFET

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Product details

Overview

SI2319DS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -40 V drain-source voltage, 0.082 Ω R_DS(on) at V_GS = -10 V, and -3.0 A continuous drain current at T_A = 25 °C. It serves as a low-side load switch in compact DC-DC power rails and battery protection circuits.

For engineers reviewing the SI2319DS-T1-BE3 datasheet, SI2319DS-T1-BE3 pinout, SI2319DS-T1-BE3 application, or SI2319DS-T1-BE3 equivalent, key selection criteria include its SOT-23 package footprint, -4.5 V logic-level gate drive compatibility, thermal resistance (R_thJA = 100 °C/W), and halogen-free construction per IEC 61249-2-21.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate-to-source bias to conduct. Its trench-based silicon structure enables low on-resistance with minimal gate charge (Q_g = 17 nC max) and fast switching (t_d(on) = 15 ns max).

It features integrated body diode with V_SD = -1.2 V at I_S = -1.25 A, supports pulsed drain currents up to -12 A, and maintains stable R_DS(on) across -55 °C to 150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in high-side or reverse-polarity protection.
R_DS(on) @ V_GS = -10 V	0.082 Ω - Enables ≤ 0.74 W conduction loss at -3.0 A, suitable for thermally constrained PCB layouts.
R_DS(on) @ V_GS = -4.5 V	0.130 Ω - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting.
Q_g	17 nC - Low gate charge reduces driver power demand and switching losses in high-frequency PWM applications.
R_thJA	100 °C/W - Limits junction temperature rise to ≤ 100 °C above ambient at 0.75 W dissipation on FR4 board.
I_D (pulsed)	-12 A - Supports short-duration inrush current handling during hot-swap or capacitive load switching.

Pinout & Package

Package: SOT-23 (TO-236), surface-mount, 3-lead plastic package with 2.80 mm × 2.10 mm footprint and 1.12 mm max height. Standard JEDEC MO-218AC outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction; tied to higher potential rail in high-side configuration.	Primary current sink node; connects to system ground or battery negative in low-side load switch topology.
2 (Gate)	Control electrode for channel formation; referenced to source potential.	Accepts negative V_GS to enable conduction; requires stable -4.5 V to -10 V drive for full enhancement.
3 (Drain)	Current input terminal; carries load current when device is on.	Connected to load side of power rail; exposed pad (drain-connected) provides thermal path to PCB copper.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling smaller SOT-23 package without sacrificing current capability.
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants for RoHS-compliant and environmentally regulated designs.
Logic-level gate drive	Guaranteed R_DS(on) ≤ 0.130 Ω at V_GS = -4.5 V, enabling direct interface with 3.3 V microcontrollers and PMICs.
Integrated body diode	Forward voltage V_SD = -1.2 V at -1.25 A allows bidirectional current flow in synchronous rectification or flyback recovery paths.
Low Q_gd/Q_gs ratio	Q_gd = 3.3 nC / Q_gs = 1.7 nC improves Miller immunity and enables stable switching in noisy industrial environments.

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlled by protection IC to disconnect battery during fault conditions. Use Value: R_DS(on) = 0.082 Ω limits voltage drop to < 250 mV at 3 A, preserving battery runtime and minimizing thermal stress on PCB.	Use Scenario: Hot-swap and short-circuit protection for USB 2.0/3.0 downstream ports in host controllers. IC Role / Device Role / Timing Role: Low-side load switch enabling controlled power ramp-up and fast fault response (< 1 µs overcurrent detection). Use Value: -12 A pulsed rating handles USB inrush transients; SOT-23 footprint fits tight spacing near USB connectors.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Node Power Gating
Use Scenario: Secondary-side rectification in isolated buck-derived converters for 3.3 V/5 V auxiliary rails. IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing Schottky diode to reduce conduction loss. Use Value: V_SD = -1.2 V and low Q_g enable efficient operation at 500 kHz–1 MHz switching frequencies with minimal dead-time penalty.	Use Scenario: Power gating of wireless transceivers and analog front-ends in battery-powered IIoT sensors. IC Role / Device Role / Timing Role: Always-on control FET isolating subsystems during deep-sleep mode to achieve sub-µA quiescent current. Use Value: I_DSS = -1 µA at -40 V ensures leakage-induced battery drain remains below 100 nA per switched rail.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlled by protection IC to disconnect battery during fault conditions.

Use Value: R_DS(on) = 0.082 Ω limits voltage drop to < 250 mV at 3 A, preserving battery runtime and minimizing thermal stress on PCB.

Use Scenario: Hot-swap and short-circuit protection for USB 2.0/3.0 downstream ports in host controllers.

IC Role / Device Role / Timing Role: Low-side load switch enabling controlled power ramp-up and fast fault response (< 1 µs overcurrent detection).

Use Value: -12 A pulsed rating handles USB inrush transients; SOT-23 footprint fits tight spacing near USB connectors.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Secondary-side rectification in isolated buck-derived converters for 3.3 V/5 V auxiliary rails.

IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing Schottky diode to reduce conduction loss.

Use Value: V_SD = -1.2 V and low Q_g enable efficient operation at 500 kHz–1 MHz switching frequencies with minimal dead-time penalty.

Use Scenario: Power gating of wireless transceivers and analog front-ends in battery-powered IIoT sensors.

IC Role / Device Role / Timing Role: Always-on control FET isolating subsystems during deep-sleep mode to achieve sub-µA quiescent current.

Use Value: I_DSS = -1 µA at -40 V ensures leakage-induced battery drain remains below 100 nA per switched rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.052 Ω @ -4.5 V (lower), but Q_g = 21 nC (higher); SOT-23 package, same pinout.	Better conduction efficiency at low V_GS, but higher gate drive power and slower switching in high-frequency PWM.	Preferred when minimizing I²R loss dominates over switching loss; verify gate driver slew rate capability.
AO3401	R_DS(on) = 0.085 Ω @ -4.5 V (nearly identical), but R_thJA = 120 °C/W (worse); same SOT-23 footprint and pinout.	Thermal derating required above 1.8 A ambient; less margin for sustained loads in enclosed enclosures.	Acceptable for intermittent duty or lower ambient temperatures; not recommended for continuous 2.4 A operation.

Compared with DMG2305UVT-7 and AO3401, the SI2319DS-T1-BE3 offers optimal balance of gate drive compatibility, thermal performance, and production consistency-making it preferred for space-constrained, thermally sensitive load-switching applications where -4.5 V logic-level control and 100 °C/W R_thJA are critical.

Availability

SI2319DS-T1-BE3 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, industrial sensor nodes, and compact DC-DC converter designs requiring stable component supply and long-term manufacturability.

Supply support for SI2319DS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and power ICs for industrial, automotive, and computing markets.

The Si2319DS belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered for low-voltage logic-level switching in space-constrained portable and embedded power systems.

FAQ

What is the maximum continuous drain current for SI2319DS-T1-BE3 at 70 °C ambient temperature?

The SI2319DS-T1-BE3 supports -1.85 A continuous drain current at T_A = 70 °C under steady-state conditions on FR4 board. This value reflects thermal derating due to reduced power dissipation (0.48 W) and higher junction-to-ambient resistance at elevated ambient temperatures. Designers must ensure PCB copper area and airflow meet Vishay's SOT-23 mounting guidelines to sustain this rating. The SI2319DS-T1-BE3 datasheet specifies this limit in the Absolute Maximum Ratings table.

Does SI2319DS-T1-BE3 support gate drive from a 3.3 V microcontroller?

Yes, the SI2319DS-T1-BE3 is fully compatible with 3.3 V logic-level gate drive. Its R_DS(on) is guaranteed at V_GS = -4.5 V (0.130 Ω max), and typical R_DS(on) drops to 0.100 Ω at that bias-enabling robust conduction without external level shifting. The SI2319DS-T1-BE3 gate threshold voltage (V_GS(th)) ranges from -1 V to -3 V, ensuring reliable turn-on even with marginal negative swing from 3.3 V GPIOs driving through simple inverters or pull-up networks.

What is the thermal resistance junction-to-foot (R_thJF) for SI2319DS-T1-BE3, and why does it matter?

The SI2319DS-T1-BE3 has a maximum R_thJF of 50 °C/W, measured from junction to drain metallization (exposed pad). This parameter matters because the drain is internally connected to the SOT-23 package's thermal pad-allowing heat to be conducted directly into PCB copper pour. Unlike R_thJA, R_thJF is less dependent on board layout and enables more predictable thermal modeling when using internal layers or thermal vias. For high-reliability designs, referencing the SI2319DS-T1-BE3 R_thJF improves accuracy of junction temperature estimation.

Can SI2319DS-T1-BE3 be used in reverse polarity protection circuits?

Yes, the SI2319DS-T1-BE3 is commonly deployed in reverse polarity protection due to its P-channel architecture and -40 V V_DS rating. When placed in the high-side position with source tied to input supply and drain to system rail, it blocks reverse voltage while conducting forward current with minimal drop. Its low R_DS(on) (0.082 Ω) ensures < 250 mV drop at 3 A, and its -55 °C to 150 °C operating range supports automotive and industrial environments. The SI2319DS-T1-BE3 body diode orientation inherently supports this topology without external components.

Is SI2319DS-T1-BE3 halogen-free and RoHS-compliant?

Yes, the SI2319DS-T1-BE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (lead-free per JEDEC J-STD-609). The "BE3" suffix explicitly denotes Vishay's halogen-free, lead-free construction. This makes the SI2319DS-T1-BE3 suitable for consumer electronics, medical devices, and green-certified industrial equipment where material compliance is mandatory. Full test reports and declarations are available via Vishay's product portal under document number 72315.

SI2319DS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 470 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2319DS-T1-BE3 FAQ

1.How can I place an order for SI2319DS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2319DS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2319DS-T1-BE3 reliable?

The price and inventory of SI2319DS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2319DS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2319DS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2319DS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2319DS-T1-BE3?

SI2319DS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2319DS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2319DS-T1-BE3?

For technical support, including SI2319DS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2319DS-T1-BE3 requirements.

6.How does Aetrix verify that SI2319DS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2319DS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2319DS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2319DS-T1-BE3?

All SI2319DS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2319DS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2319DS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2319DS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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