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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2323DS-T1

Name: SI2323DS-T1
Brand: Vishay Siliconix
SKU: SI2323DS-T1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2323DS-T1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2323DS-T1.pdf

Description:: MOSFET P-CH 20V 3.7A SOT23-3

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Product details

Overview

SI2323DS-T1 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 4.7 A continuous drain current at 25 °C, and 0.039 Ω R_DS(on) at V_GS = -4.5 V. It serves as a low-side load switch in portable power management circuits with fast switching and low gate charge.

For engineers reviewing the SI2323DS-T1 datasheet, SI2323DS-T1 pinout, SI2323DS-T1 application, or SI2323DS-T1 equivalent, key selection criteria include guaranteed R_DS(on) at low gate drive (-2.5 V), thermal resistance (R_thJA = 120 °C/W), SOT-23 package compatibility, and halogen-free/lead-free compliance per IEC 61249-2-21.

Technical Context

This device operates as a single P-channel MOSFET with a negative threshold voltage (-0.4 to -1.0 V) enabling logic-level gate drive from 2.5 V–4.5 V controllers. Its trench-based silicon structure delivers low on-resistance and high transconductance (16 S typical) while maintaining robust safe operating area up to -20 V and -20 A pulsed drain current.

Thermal design relies on its junction-to-foot (R_thJF = 40 °C/W max) and junction-to-ambient (R_thJA = 120 °C/W steady-state) characteristics, validated on 1" × 1" FR4 board. Switching performance is temperature-stable, with turn-on delay of 25 ns and total gate charge of 12.5–19 nC at V_DS = -10 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage DC power rails
R_DS(on) @ V_GS = -4.5 V	0.039 Ω - Enables <180 mW conduction loss at 4.7 A
I_D Continuous (T_A = 25 °C)	-4.7 A - Supports compact load-switch designs without forced cooling
Q_g Total Gate Charge	12.5–19 nC - Determines gate driver strength requirement for <100 ns switching
V_GS(th)	-0.4 to -1.0 V - Ensures reliable turn-on with 2.5 V logic outputs
P_D (T_A = 25 °C)	1.25 W - Sets maximum dissipation limit on standard PCB layout
C_iss	1020 pF - Impacts EMI behavior and gate drive loop stability

Pinout & Package

SI2323DS-T1 is housed in a standard SOT-23 (TO-236) surface-mount package with 3 terminals: Drain (D), Source (S), and Gate (G). The package measures 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm and is optimized for automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative gate drive relative to source; threshold ensures compatibility with 2.5 V microcontrollers
2 (Source)	Reference node	Connected to system ground or higher potential rail; forms return path for body diode conduction
3 (Drain)	Power output	Switches negative-side loads; exposed drain pad improves thermal transfer to PCB copper

Key Features

Feature	Design Value
TrenchFET® technology	Delivers 39 mΩ R_DS(on) at -4.5 V in SOT-23, reducing conduction losses by >25% vs. planar alternatives
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without exemptions
Low gate threshold	V_GS(th) range (-0.4 to -1.0 V) guarantees turn-on with 2.5 V logic, eliminating level-shifter need
Fast switching	40 ns rise time and 75 ns fall time enable efficient operation in 1–5 MHz DC-DC control loops
Robust SOA	Rated for -20 A pulsed drain current and -20 V blocking, supporting surge-tolerant load switching

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Isolating battery-backed subsystems during sleep mode to minimize quiescent current. IC Role / Device Role / Timing Role: Low-side P-channel load switch controlling V_BAT-fed PMIC rails. Use Value: 0.039 Ω R_DS(on) limits voltage drop to <185 mV at 4.7 A, preserving battery runtime.	Use Scenario: Preventing backfeed from downstream USB devices into host power domain. IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between VBUS and port controller. Use Value: Body diode forward voltage of -0.7 to -1.2 V enables fast reverse-blocking response without external Schottky.
Wireless Headset Battery Charging	Industrial Sensor Node Power Gating
Use Scenario: Enabling/disabling charging circuitry based on battery state-of-charge signals. IC Role / Device Role / Timing Role: High-efficiency P-channel switch in linear charger path. Use Value: 12.5 nC gate charge allows full turn-on within 500 ns using 27 Ω gate resistor, minimizing transition losses.	Use Scenario: Powering down analog front-end ICs between measurement cycles to extend battery life. IC Role / Device Role / Timing Role: Ultra-low-I_Q load switch controlled by MCU GPIO. Use Value: Zero-gate-voltage leakage (IDSS ≤ -1 µA) ensures <1 µA off-state current, critical for multi-year sensor deployments.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Isolating battery-backed subsystems during sleep mode to minimize quiescent current.

IC Role / Device Role / Timing Role: Low-side P-channel load switch controlling V_BAT-fed PMIC rails.

Use Value: 0.039 Ω R_DS(on) limits voltage drop to <185 mV at 4.7 A, preserving battery runtime.

Use Scenario: Preventing backfeed from downstream USB devices into host power domain.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between VBUS and port controller.

Use Value: Body diode forward voltage of -0.7 to -1.2 V enables fast reverse-blocking response without external Schottky.

Wireless Headset Battery Charging

Industrial Sensor Node Power Gating

Use Scenario: Enabling/disabling charging circuitry based on battery state-of-charge signals.

IC Role / Device Role / Timing Role: High-efficiency P-channel switch in linear charger path.

Use Value: 12.5 nC gate charge allows full turn-on within 500 ns using 27 Ω gate resistor, minimizing transition losses.

Use Scenario: Powering down analog front-end ICs between measurement cycles to extend battery life.

IC Role / Device Role / Timing Role: Ultra-low-I_Q load switch controlled by MCU GPIO.

Use Value: Zero-gate-voltage leakage (IDSS ≤ -1 µA) ensures <1 µA off-state current, critical for multi-year sensor deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2023LSD-13	R_DS(on) = 0.042 Ω @ -4.5 V; slightly higher Q_g (21 nC); same SOT-23 package	Marginally lower efficiency at high current; identical footprint and biasing	Preferred when higher surge current rating (I_DM = -30 A) is required
AO3401	R_DS(on) = 0.052 Ω @ -4.5 V; V_GS(th) = -0.7 to -1.3 V; higher C_iss (1200 pF)	Requires stronger gate drive for same switching speed; wider threshold spread affects consistency	Selected where cost sensitivity outweighs 13 mΩ R_DS(on) penalty and thermal margin exists

Compared with DMN2023LSD-13 and AO3401, SI2323DS-T1 offers the lowest R_DS(on) and tightest V_GS(th) distribution in SOT-23, making it optimal for space-constrained, high-efficiency load switching where thermal headroom is limited.

Availability

SI2323DS-T1 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and industrial sensor node power gating requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for SI2323DS-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si2323DS-T1 belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered for high-density DC power control in portable and battery-powered systems where low R_DS(on), logic-level drive, and compact packaging are essential.

FAQ

What is the maximum continuous drain current for SI2323DS-T1 at 70 °C ambient temperature?

The SI2323DS-T1 supports -3.8 A continuous drain current at T_A = 70 °C under standard mounting conditions (1" × 1" FR4 board). This derating reflects its thermal resistance (R_thJA = 120 °C/W) and maximum junction temperature of 150 °C. Designers must verify PCB copper area and airflow to maintain this rating in actual layouts. The SI2323DS-T1 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI2323DS-T1 have a built-in body diode, and what is its forward voltage?

Yes, SI2323DS-T1 includes an intrinsic body diode with a forward voltage (V_SD) of -0.7 to -1.2 V at I_S = -1.0 A and V_GS = 0 V. This diode enables reverse-current blocking and synchronous rectification in certain topologies. Its voltage range is specified in the "Diode Forward Voltage" section of the SI2323DS-T1 datasheet and remains stable across junction temperatures from -55 °C to 150 °C.

Can SI2323DS-T1 be driven directly by a 2.5 V GPIO without a level shifter?

Yes, SI2323DS-T1 can be driven directly by a 2.5 V GPIO because its gate-threshold voltage (V_GS(th)) ranges from -0.4 to -1.0 V, ensuring full enhancement at V_GS = -2.5 V. At that drive level, R_DS(on) is 0.052 Ω (typical), delivering usable on-state performance. This capability eliminates external level-shifting circuitry and is confirmed in the SI2323DS-T1 Product Summary and Specifications tables.

What is the total gate charge (Q_g) of SI2323DS-T1, and how does it affect switching speed?

The SI2323DS-T1 has a total gate charge (Q_g) of 12.5–19 nC at V_DS = -10 V and V_GS = -4.5 V. This value determines the energy required to switch the device and directly impacts rise/fall times: with a 6 Ω gate resistor, typical turn-on delay is 25 ns and turn-off delay is 71 ns. These timing parameters are measured per JEDEC standards and documented in the SI2323DS-T1 switching characteristics table.

Is SI2323DS-T1 compliant with both RoHS and halogen-free requirements?

Yes, SI2323DS-T1 (specifically the Si2323DS-T1-GE3 variant) is certified lead-free and halogen-free per IEC 61249-2-21. This compliance is explicitly stated in the Vishay datasheet revision D and confirmed in the Ordering Information section. The "GE3" suffix denotes full conformance, distinguishing it from the "E3" (RoHS only) variant. SI2323DS-T1 meets environmental mandates for consumer, medical, and industrial end equipment without exemptions.

SI2323DS-T1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2323DS-T1 FAQ

1.How can I place an order for SI2323DS-T1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2323DS-T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2323DS-T1 reliable?

The price and inventory of SI2323DS-T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2323DS-T1 is usually 5 days.

3.What payment methods are accepted for SI2323DS-T1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2323DS-T1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2323DS-T1?

SI2323DS-T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2323DS-T1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2323DS-T1?

For technical support, including SI2323DS-T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2323DS-T1 requirements.

6.How does Aetrix verify that SI2323DS-T1 is sourced from the original manufacturer or authorized distributors?

All SI2323DS-T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2323DS-T1 meets industry standards.

7.What is the process for return or replacement of SI2323DS-T1?

All SI2323DS-T1 units undergo pre-shipment inspection (PSI). If there is an issue with SI2323DS-T1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2323DS-T1 part is unused and in its original packaging.

Return procedure for SI2323DS-T1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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