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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2323DS-T1-E3

Name: SI2323DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2323DS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2323DS-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2323DS-T1-E3.pdf

Description:: MOSFET P-CH 20V 3.7A SOT23-3

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Product details

Overview

SI2323DS-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.039 Ω R_DS(on) at V_GS = -4.5 V, and -4.7 A continuous drain current at T_A = 25 °C. It serves as a low-side load switch in portable power management circuits with fast switching and low gate charge.

For engineers reviewing the SI2323DS-T1-E3 datasheet, SI2323DS-T1-E3 pinout, SI2323DS-T1-E3 application, or SI2323DS-T1-E3 equivalent, this page delivers verified electrical specs, SOT-23 package details, thermal resistance data, diode conduction capability, and real-world use cases in battery-powered systems.

Technical Context

This device operates as a single P-channel MOSFET with gate-threshold voltage between -0.40 V and -1.0 V, enabling logic-level drive from 2.5 V–4.5 V controllers. Its R_DS(on) remains stable across junction temperatures up to 150 °C, supported by normalized on-resistance curves showing <15% drift from 25 °C to 125 °C.

Dynamic performance includes 12.5–19 nC total gate charge, 3.3 nC gate-drain charge, and sub-110 ns turn-off time under standard test conditions (V_DD = -10 V, R_G = 6 Ω). The integrated body diode exhibits V_SD = -0.7 to -1.2 V at I_S = -1.0 A, suitable for synchronous rectification or reverse-polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for battery-input side switching in 12 V or lower systems
R_DS(on)	0.039 Ω @ V_GS = -4.5 V - Enables ≤220 mW conduction loss at 4.7 A, critical for thermal budget in compact PCBs
I_D (cont)	-4.7 A @ T_A = 25 °C - Supports high-current load switching without external heatsinking on FR4
Q_g	12.5–19 nC - Low gate drive energy reduces controller loading and enables efficient PWM operation above 100 kHz
R_thJA	120 °C/W (steady state) - Defines thermal derating slope: ~100 mW max power at 70 °C ambient without forced air
V_GS(th)	-0.40 to -1.0 V - Ensures reliable turn-on with 2.5 V GPIO or microcontroller outputs, avoiding weak drive issues
V_SD	-0.7 to -1.2 V @ I_S = -1.0 A - Provides low-loss reverse-current path for inductive loads or back-powering scenarios

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 terminals: Drain (D), Gate (G), Source (S). Dimensions per Vishay Doc. 71196: D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm (BSC), L = 0.40–0.60 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input requiring ≤±8 V rating; low Q_gs (1.7 nC) enables fast edge rates with minimal driver strength
2 (S)	Source	Reference node for gate drive; connects to system ground or higher-potential rail depending on high/low-side configuration
3 (D)	Drain	Switched output terminal; thermally coupled to PCB copper via exposed drain pad in standard SOT-23 footprint

Key Features

Feature	Design Value
TrenchFET® technology	Delivers 39 mΩ R_DS(on) in SOT-23, achieving >2× lower on-resistance than planar P-channel MOSFETs of same size
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising dielectric or thermal performance
Low V_GS(th) range	-0.40 to -1.0 V threshold ensures full enhancement with 2.5 V logic, eliminating need for level-shifting circuitry
Integrated body diode	Rated for -1.0 A continuous source current; supports bidirectional current flow in H-bridge or OR-ing applications
Pb-free termination	E3 suffix denotes RoHS-compliant matte tin plating; compatible with lead-free reflow profiles (J-STD-020, peak 260 °C)

Applications

Battery Protection Circuit	USB Power Switch
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs using discrete MOSFET control. IC Role / Device Role / Timing Role: P-channel MOSFET configured as low-side switch to disconnect battery during fault conditions. Use Value: 0.039 Ω R_DS(on) limits voltage drop to <200 mV at 5 A, preserving battery runtime and reducing thermal stress on PCB traces.	Use Scenario: Hot-swap enable/disable of USB VBUS to peripheral devices in portable hubs or docking stations. IC Role / Device Role / Timing Role: Load switch controlling 5 V supply rail with controlled inrush current via gate resistor tuning. Use Value: 12.5 nC Q_g allows clean 10–100 µs turn-on/turn-off transitions, preventing bus glitches during plug/unplug events.
RF Power Amplifier Bias Control	Industrial Sensor Node Power Gating
Use Scenario: Enabling/disabling bias voltage to GaAs or SiGe RF power amplifiers in cellular baseband modules. IC Role / Device Role / Timing Role: High-speed P-channel switch isolating PA supply during sleep mode to reduce quiescent current. Use Value: Sub-110 ns t_d(off) ensures rapid shutdown (<1 µs), minimizing RF leakage and meeting 3GPP idle-mode power requirements.	Use Scenario: Power gating of analog front-end ICs and ADCs in battery-operated environmental sensors deployed in remote locations. IC Role / Device Role / Timing Role: Main power switch for sensor subsystem, driven directly by MCU GPIO without buffer stage. Use Value: -0.40 V V_GS(th) guarantees turn-on with 1.8 V/3.3 V MCU outputs, eliminating external level shifters and saving BOM cost.

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs using discrete MOSFET control.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as low-side switch to disconnect battery during fault conditions.

Use Value: 0.039 Ω R_DS(on) limits voltage drop to <200 mV at 5 A, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Hot-swap enable/disable of USB VBUS to peripheral devices in portable hubs or docking stations.

IC Role / Device Role / Timing Role: Load switch controlling 5 V supply rail with controlled inrush current via gate resistor tuning.

Use Value: 12.5 nC Q_g allows clean 10–100 µs turn-on/turn-off transitions, preventing bus glitches during plug/unplug events.

RF Power Amplifier Bias Control

Industrial Sensor Node Power Gating

Use Scenario: Enabling/disabling bias voltage to GaAs or SiGe RF power amplifiers in cellular baseband modules.

IC Role / Device Role / Timing Role: High-speed P-channel switch isolating PA supply during sleep mode to reduce quiescent current.

Use Value: Sub-110 ns t_d(off) ensures rapid shutdown (<1 µs), minimizing RF leakage and meeting 3GPP idle-mode power requirements.

Use Scenario: Power gating of analog front-end ICs and ADCs in battery-operated environmental sensors deployed in remote locations.

IC Role / Device Role / Timing Role: Main power switch for sensor subsystem, driven directly by MCU GPIO without buffer stage.

Use Value: -0.40 V V_GS(th) guarantees turn-on with 1.8 V/3.3 V MCU outputs, eliminating external level shifters and saving BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; higher Q_g (22 nC); SOT-23 package with identical pinout	Marginally higher conduction loss and slower switching; acceptable where gate drive strength exceeds 5 mA	Choose when existing layout uses Diodes Inc. footprint and thermal margin permits +13% R_DS(on)
AO3401	R_DS(on) = 0.052 Ω @ -4.5 V; V_GS(th) = -0.7 to -1.3 V; slightly higher thermal resistance (R_thJA = 130 °C/W)	Requires stronger gate drive for full enhancement; less suitable for 2.5 V logic interfaces	Prefer when sourcing from Alpha & Omega and design tolerates wider V_GS(th) distribution and +33% on-resistance

Compared with DMG2305UVT-7 and AO3401, SI2323DS-T1-E3 offers the lowest R_DS(on) and tightest V_GS(th) window in SOT-23, making it optimal for space-constrained, low-voltage, high-efficiency load switching where gate drive capability is limited.

Availability

SI2323DS-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, and RF amplifier bias control requiring stable component supply and Pb-free compliance.

Supply support for SI2323DS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, reliability, and miniaturization.

The Si2323DS belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for high-density DC-DC conversion, load switching, and power management in portable and battery-powered equipment.

FAQ

What is the maximum continuous drain current for SI2323DS-T1-E3 at 70 °C ambient temperature?

The SI2323DS-T1-E3 supports -3.8 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions. This value reflects thermal derating due to reduced power dissipation (0.8 W) at elevated ambient, and must be validated against actual PCB copper area and airflow in the target application.

Does SI2323DS-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, SI2323DS-T1-E3 integrates a parasitic body diode with V_SD = -0.7 to -1.2 V at I_S = -1.0 A and T_J = 25 °C. This diode enables reverse-current conduction in configurations like OR-ing or inductive load freewheeling, and its voltage drop is confirmed in the "Diode Forward Voltage" section of the datasheet.

Is SI2323DS-T1-E3 compatible with lead-free reflow soldering processes?

Yes, SI2323DS-T1-E3 carries the E3 suffix indicating Pb-free matte tin terminations, fully compliant with J-STD-020 reflow profiles. Its maximum peak temperature rating is 260 °C, and the device is qualified for standard lead-free assembly without special process modifications.

What is the gate threshold voltage range for SI2323DS-T1-E3, and why does it matter for logic-level drive?

The SI2323DS-T1-E3 has a V_GS(th) range of -0.40 V to -1.0 V, meaning it fully enhances with gate voltages as low as -2.5 V. This allows direct drive from 2.5 V or 3.3 V microcontrollers without level shifters-critical for low-power portable designs where gate drive simplicity and voltage margin are essential.

How does the thermal resistance of SI2323DS-T1-E3 affect its power handling on a standard PCB?

With R_thJA = 120 °C/W (steady state), SI2323DS-T1-E3 dissipates 0.75 W at T_A = 25 °C before reaching T_J = 150 °C. On a 1" × 1" FR4 board, this corresponds to ~1.5 A at 0.039 Ω R_DS(on); increasing copper area or adding thermal vias lowers effective R_thJA, directly extending usable current capacity.

SI2323DS-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2323DS-T1-E3 FAQ

1.How can I place an order for SI2323DS-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2323DS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2323DS-T1-E3 reliable?

The price and inventory of SI2323DS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2323DS-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI2323DS-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2323DS-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2323DS-T1-E3?

SI2323DS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2323DS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2323DS-T1-E3?

For technical support, including SI2323DS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2323DS-T1-E3 requirements.

6.How does Aetrix verify that SI2323DS-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI2323DS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2323DS-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI2323DS-T1-E3?

All SI2323DS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2323DS-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2323DS-T1-E3 part is unused and in its original packaging.

Return procedure for SI2323DS-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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