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Vishay Siliconix SI2323DS-T1-GE3
- Part No.:
- SI2323DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2323DS-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 3.7A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,175
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Product details
Overview
SI2323DS-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET optimized for low-voltage load switching in space-constrained applications. It features -20 V drain-source voltage rating, 0.039 Ω RDS(on) at VGS = -4.5 V, -4.7 A continuous drain current (TJ = 150 °C), and SOT-23 (TO-236) surface-mount package. It is used in portable power management circuits where fast turn-on and low conduction loss are critical.
For engineers reviewing the SI2323DS-T1-GE3 datasheet, SI2323DS-T1-GE3 pinout, SI2323DS-T1-GE3 application, or SI2323DS-T1-GE3 equivalent, key selection criteria include verified RDS(on) at low gate drive (-2.5 V and -1.8 V), guaranteed VGS(th) range (-0.40 V to -1.0 V), thermal resistance (RthJA = 120 °C/W steady-state), and halogen-free/RoHS-compliant construction per IEC 61249-2-21.
Technical Context
This device operates as a single P-channel switch with gate-controlled depletion of the channel under negative VGS. Its trench-based silicon structure delivers low on-resistance while maintaining robust safe operating area (SOA) up to -20 V and -20 A pulsed drain current. The integrated body diode supports reverse-current paths in DC-DC and battery-protection topologies.
Thermal design relies on junction-to-ambient conduction through the SOT-23 drain pad (RthJF = 40 °C/W typical), and its gate charge profile (Qg = 12.5–19 nC) enables efficient switching at frequencies up to several hundred kHz without excessive driver losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage before avalanche breakdown; defines upper limit for supply rail compatibility in high-side switch configurations. |
| RDS(on) | 0.039 Ω @ VGS = -4.5 V - Confirmed conduction loss at standard logic-level gate drive; yields <0.1 W I²R loss at 4.7 A. |
| ID (continuous) | -4.7 A @ TJ = 150 °C - Verified current-handling capability under worst-case thermal conditions on standard FR4 PCB. |
| VGS(th) | -0.40 to -1.0 V - Guaranteed turn-on threshold enabling reliable operation with 1.8 V/2.5 V microcontroller GPIOs. |
| Qg | 12.5–19 nC - Total gate charge determining driver strength requirement and switching energy loss in PWM applications. |
| Ciss | 1020 pF - Input capacitance affecting gate drive loop stability and high-frequency switching behavior. |
| TJ range | -55 to +150 °C - Validated operational temperature envelope for automotive interior, industrial control, and consumer power stages. |
Pinout & Package
SOT-23 (TO-236) plastic surface-mount package with gull-wing leads; drain-connected tab for thermal and electrical performance; 3-terminal configuration with standardized footprint per Vishay drawing 71196.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Accepts negative VGS to modulate channel conductivity; requires external pull-up for default-off operation. |
| 2 (Source) | Reference node | Connected to higher-potential rail in high-side switch; serves as return path for body diode conduction. |
| 3 (Drain) | Power output | Connected to load; thermally tied to PCB copper pour via exposed drain pad to dissipate 0.75 W at 70 °C ambient. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.039 Ω RDS(on) in SOT-23, reducing conduction loss by >35% versus planar P-channel alternatives at same package size. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and EU RoHS Directive 2011/65/EU; eliminates brominated flame retardants without compromising moisture sensitivity or solderability. |
| Low VGS(th) distribution | Specified -0.40 V to -1.0 V ensures consistent turn-on across production lots when driven from 1.8 V or 2.5 V logic sources. |
| Enhanced SOA | Rated for -20 A pulsed drain current with defined single-pulse power limits, supporting surge-tolerant load switching in battery-powered systems. |
| Optimized gate charge | Qg = 12.5–19 nC balances switching speed and driver complexity-enabling use with low-power MCU GPIOs without external buffers. |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs during charging/discharging cycles. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery connection to system load; activated/deactivated by protection IC signal. Use Value: 0.039 Ω RDS(on) minimizes voltage drop and self-heating during sustained 3–4 A discharge, extending runtime and thermal margin. |
Use Scenario: Controlled power delivery to USB peripherals in portable devices with dynamic insertion detection. IC Role / Device Role / Timing Role: Load switch isolating VBUS from downstream ports; driven by USB controller GPIO with 1.8 V logic compatibility. Use Value: Guaranteed -0.40 V VGS(th) ensures full enhancement at 1.8 V gate drive, eliminating need for level-shifting circuitry. |
| RF Power Amplifier Bias Control | Industrial Sensor Node Power Gating |
Use Scenario: Enabling/disabling bias voltage to RF PA stages in cellular IoT modules to reduce standby current. IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between bias supply and PA collector; controlled by baseband processor. Use Value: -1 µA IDSS at -16 V ensures <1 µA leakage in OFF state, preserving battery life over multi-week sleep intervals. |
Use Scenario: Periodic wake-up and measurement cycles in battery-operated environmental sensors deployed in remote locations. IC Role / Device Role / Timing Role: Main power switch for microcontroller, sensor, and radio subsystems; sequenced by real-time clock interrupt. Use Value: RthJA = 120 °C/W allows full 4.7 A operation on minimal 1" × 1" FR4 board, avoiding heatsink requirements in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V; VGS(th) = -0.5 to -1.2 V; Qg = 14.5 nC; same SOT-23 package. | Marginally higher RDS(on) increases conduction loss by ~15% at 4.7 A; wider VGS(th) range may require stronger gate pull-up. | Acceptable where 0.045 Ω is within system IR-drop budget and gate drive can accommodate lower threshold certainty. |
| AO3401 | RDS(on) = 0.052 Ω @ -4.5 V; VGS(th) = -0.7 to -1.3 V; Qg = 16 nC; same SOT-23 footprint but different marking and tape/reel packaging. | Higher on-resistance and deeper VGS(th) minimum reduces margin for 1.8 V drive; thermal resistance not specified for same board layout. | Valid alternative only if gate drive is ≥2.5 V and thermal derating is applied per actual PCB layout testing. |
Compared with DMG2305UVT-7 and AO3401, SI2323DS-T1-GE3 offers the lowest verified RDS(on) and tightest VGS(th) window among SOT-23 P-channel MOSFETs rated for -20 V, delivering superior efficiency in 1.8 V–2.5 V logic-driven load switching with documented thermal performance on standard FR4.
Availability
SI2323DS-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, RF amplifier bias control, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for SI2323DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and performance in harsh environments.
The Si2323DS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for high-efficiency, low-voltage load switching in portable, battery-powered, and space-constrained electronic systems.
FAQ
What is the maximum continuous drain current for SI2323DS-T1-GE3 at 70 °C ambient temperature?
The SI2323DS-T1-GE3 supports -3.8 A continuous drain current at TA = 70 °C with proper PCB copper area, as specified in the Absolute Maximum Ratings table. This value assumes surface mounting on a 1" × 1" FR4 board and accounts for thermal derating from the 150 °C junction limit. Exceeding this current without enhanced cooling risks thermal runaway.
Does SI2323DS-T1-GE3 have a built-in body diode, and what is its forward voltage?
Yes, SI2323DS-T1-GE3 includes an integrated source-drain body diode with VSD = -0.7 to -1.2 V at IS = -1.0 A and VGS = 0 V. This diode enables reverse-current conduction in applications like battery back-up paths and flyback energy recovery, and its voltage drop is characterized across temperature in the datasheet's Typical Characteristics section.
Is SI2323DS-T1-GE3 compatible with 1.8 V microcontroller GPIOs for direct gate driving?
Yes, SI2323DS-T1-GE3 is specifically designed for 1.8 V logic compatibility: its guaranteed VGS(th) range of -0.40 V to -1.0 V ensures full enhancement with 1.8 V gate drive relative to source, and RDS(on) remains low (0.068 Ω) even at VGS = -1.8 V, enabling robust switching without level shifters.
What is the thermal resistance from junction to ambient (RthJA) for SI2323DS-T1-GE3 under steady-state conditions?
The steady-state junction-to-ambient thermal resistance for SI2323DS-T1-GE3 is 120 °C/W (maximum) when mounted on a standard 1" × 1" FR4 board, as stated in the Thermal Resistance Ratings table. This value is critical for calculating maximum allowable power dissipation at a given ambient temperature and must be validated with actual PCB layout and copper coverage.
How does the halogen-free status of SI2323DS-T1-GE3 impact its assembly process?
The halogen-free status of SI2323DS-T1-GE3 complies with IEC 61249-2-21 and does not alter reflow profile requirements: it is qualified for standard Pb-free soldering per J-STD-020, with peak temperature ≤ 260 °C. No special flux or process adjustments are needed beyond standard RoHS-compliant assembly practices.
SI2323DS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 39mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1020 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2323DS-T1-GE3 FAQ
1.How can I place an order for SI2323DS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2323DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2323DS-T1-GE3 reliable?
The price and inventory of SI2323DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2323DS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2323DS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2323DS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2323DS-T1-GE3?
SI2323DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2323DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2323DS-T1-GE3?
For technical support, including SI2323DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2323DS-T1-GE3 requirements.
6.How does Aetrix verify that SI2323DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2323DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2323DS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2323DS-T1-GE3?
All SI2323DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2323DS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2323DS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2323DS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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