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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2324DS-T1-BE3

Name: SI2324DS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2324DS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2324DS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2324DS-T1-BE3.pdf

Description:: MOSFET N-CH 100V 2.3A SOT-23

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Product details

Overview

SI2324DS-T1-BE3 from Vishay Siliconix is an N-channel enhancement-mode TrenchFET® power MOSFET in SOT-23 (TO-236) package, rated for 100 V drain-source voltage, 2.3 A continuous drain current at TC = 25 °C, and 0.234 Ω R_DS(on) at V_GS = 10 V. It serves as a compact, surface-mount load switch or synchronous rectifier in space-constrained DC/DC converters.

For engineers reviewing the SI2324DS-T1-BE3 datasheet, SI2324DS-T1-BE3 pinout, SI2324DS-T1-BE3 application, or SI2324DS-T1-BE3 equivalent, key selection criteria include its 100 % UIS-tested ruggedness, low gate charge (2.9 nC at V_GS = 4.5 V), and verified thermal performance on standard FR4 boards - critical for high-efficiency, thermally sensitive LED backlighting and point-of-load designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) with fast switching characteristics: typical t_d(on) = 30 ns and t_f = 12 ns at V_GEN = 4.5 V, enabling efficient operation in 300 kHz–1 MHz DC/DC topologies. Its body diode exhibits t_rr = 22 ns and Q_rr = 21 nC, supporting synchronous rectification without external Schottky replacement.

The device features guaranteed 100 % R_g testing and 100 % unclamped inductive switching (UIS) validation per JEDEC JESD22-A109. Junction-to-foot thermal resistance is specified at 40 °C/W (typical), making it suitable for direct thermal coupling to copper pour or small heatsinks in low-power industrial modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal with 2× safety margin in telecom and industrial SMPS.
R_DS(on) @ V_GS = 10 V	0.234 Ω - enables ≤0.5 W conduction loss at 2.3 A, reducing thermal footprint in sealed enclosures.
Q_g @ V_GS = 4.5 V	2.9 nC - allows efficient drive from low-voltage microcontrollers (e.g., 3.3 V GPIO) without gate driver ICs.
I_D (continuous, T_C = 25 °C)	2.3 A - delivers full-rated current with minimal derating when mounted on 1" × 1" FR4 board.
R_thJA (≤5 s)	75 °C/W (typical) - defines transient thermal response during short overloads; critical for pulse-load reliability.
V_GS(th)	1.2–2.8 V - ensures turn-on compatibility with 3.3 V and 5 V logic systems without level shifting.
E_AS	1.25 mJ - quantifies single-pulse avalanche energy handling, supporting robustness in inductive load switching.

Pinout & Package

SOT-23 (TO-236) package: 3-pin, surface-mount, plastic case with gull-wing leads. Dimensions per Vishay Doc. 71196: D = 2.80–3.04 mm, E = 2.10–2.64 mm, b = 0.35–0.50 mm. Thermal pad not present; drain connected to tab (pin 2) for primary heat path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires <2.8 V threshold to initiate conduction; low C_iss (190 pF) minimizes drive power.
2 (D)	Drain	Main power output terminal; internally connected to exposed drain tab for thermal conduction to PCB.
3 (S)	Source	Power return/reference node; ties to ground or low-side switch node; body diode anode is at source.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 23 % lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in portable DC/DC stages.
100 % UIS tested	Guarantees survival under worst-case inductive turn-off stress (e.g., solenoid or motor coil interruption) without derating.
Low Q_gd/Q_g ratio (1.4/2.9 nC)	Reduces Miller effect, enabling stable switching at high dV/dt without oscillation in noisy industrial environments.
Body diode t_rr = 22 ns	Minimizes reverse recovery losses in synchronous buck converters operating above 500 kHz.
Lead (Pb)-free and Halogen-free (per JEDEC JS709A)	Complies with RoHS 2011/65/EU and REACH SVHC requirements for global industrial and consumer shipments.

Applications

DC/DC Converters	Load Switch
Use Scenario: Point-of-load (POL) buck converter in network router supplying 3.3 V/2 A to FPGA I/O banks. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Achieves >92 % efficiency at full load due to 0.234 Ω R_DS(on) and 22 ns body diode t_rr, cutting thermal rise by 15 °C vs. diode solution.	Use Scenario: Hot-swap control for USB-C peripheral port with inrush current limiting and fault disconnect. IC Role / Device Role: High-side load switch controlled via GPIO to enable/disable 5 V rail to downstream devices. Use Value: Enables <1 ms turn-on with 2.9 nC gate charge, while 100 % UIS rating prevents failure during cable-insertion surge events.
LED Backlighting	Industrial Sensor Interface
Use Scenario: Constant-current LED string driver in LCD TV backlight module using PWM dimming at 200 Hz. IC Role / Device Role: Low-side PWM switch controlling current through boost converter output stage. Use Value: Delivers clean 100 ns fall time (t_f) for precise dimming linearity and eliminates visible flicker at low brightness levels.	Use Scenario: Isolated analog sensor signal conditioning board requiring local 12 V rail switching for transducer excitation. IC Role / Device Role: Secondary-side power switch enabling selective activation of pressure or temperature sensors. Use Value: Supports -55 °C to +150 °C junction operation, ensuring reliable on/off control across extended industrial temperature ranges.

DC/DC Converters

Load Switch

Use Scenario: Point-of-load (POL) buck converter in network router supplying 3.3 V/2 A to FPGA I/O banks.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves >92 % efficiency at full load due to 0.234 Ω R_DS(on) and 22 ns body diode t_rr, cutting thermal rise by 15 °C vs. diode solution.

Use Scenario: Hot-swap control for USB-C peripheral port with inrush current limiting and fault disconnect.

IC Role / Device Role: High-side load switch controlled via GPIO to enable/disable 5 V rail to downstream devices.

Use Value: Enables <1 ms turn-on with 2.9 nC gate charge, while 100 % UIS rating prevents failure during cable-insertion surge events.

LED Backlighting

Industrial Sensor Interface

Use Scenario: Constant-current LED string driver in LCD TV backlight module using PWM dimming at 200 Hz.

IC Role / Device Role: Low-side PWM switch controlling current through boost converter output stage.

Use Value: Delivers clean 100 ns fall time (t_f) for precise dimming linearity and eliminates visible flicker at low brightness levels.

Use Scenario: Isolated analog sensor signal conditioning board requiring local 12 V rail switching for transducer excitation.

IC Role / Device Role: Secondary-side power switch enabling selective activation of pressure or temperature sensors.

Use Value: Supports -55 °C to +150 °C junction operation, ensuring reliable on/off control across extended industrial temperature ranges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LW-7	R_DS(on) = 0.19 Ω @ 4.5 V (lower), but V_DS = 20 V only - unsuitable for 48 V input rails.	Limited to ≤24 V systems; cannot replace SI2324DS-T1-BE3 in 100 V tolerant designs.	Select only for low-voltage, high-current applications where R_DS(on) dominates over voltage rating.
AO3400	R_DS(on) = 0.042 Ω @ 10 V (much lower), but no 100 % UIS test data published; R_thJA = 125 °C/W (worse).	Higher conduction efficiency but reduced ruggedness and thermal headroom in sustained loads.	Prefer for battery-powered apps with tight efficiency targets; avoid in industrial environments with frequent transients.

Compared with DMN2053LW-7 and AO3400, SI2324DS-T1-BE3 uniquely balances 100 V rating, proven UIS robustness, and moderate R_DS(on) - making it optimal for cost-sensitive, thermally constrained 48 V industrial DC/DC and LED drivers where reliability trumps peak efficiency.

Availability

SI2324DS-T1-BE3 is available at Aetrix Electronics and suitable for DC/DC converters, load switch circuits, and LED backlighting applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI2324DS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and automotive-grade reliability.

The Si2324DS belongs to Vishay's TrenchFET® Gen III family, engineered for high-efficiency, low-voltage switching in space-constrained power management systems - particularly targeting industrial, computing, and display power supplies.

FAQ

What is the maximum continuous drain current for SI2324DS-T1-BE3 at 70 °C case temperature?

The maximum continuous drain current for SI2324DS-T1-BE3 is 1.8 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-23 package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C. SI2324DS-T1-BE3 must be mounted on ≥1" × 1" FR4 board per test condition to achieve this rating.

Does SI2324DS-T1-BE3 support gate drive from a 3.3 V microcontroller without a level shifter?

Yes, SI2324DS-T1-BE3 has a gate threshold voltage (V_GS(th)) range of 1.2–2.8 V, and its R_DS(on) is characterized down to V_GS = 4.5 V (0.278 Ω). A 3.3 V GPIO can fully enhance the device, delivering ~1.7 A continuous current. SI2324DS-T1-BE3 also features low total gate charge (2.9 nC at 4.5 V), minimizing drive strength requirements and enabling direct MCU control in low-power systems.

Is SI2324DS-T1-BE3 suitable for use as a synchronous rectifier in a 500 kHz buck converter?

Yes, SI2324DS-T1-BE3 is suitable: its body diode reverse recovery time (t_rr) is 22 ns and Q_rr is 21 nC, enabling efficient synchronous rectification at 500 kHz. With t_f = 12 ns and t_d(off) = 17 ns at V_GEN = 4.5 V, timing margins allow clean overlap control. SI2324DS-T1-BE3's low C_oss (22 pF) further reduces switching loss at high frequency, confirmed in Vishay's typical characteristics curves.

What is the thermal resistance from junction to ambient for SI2324DS-T1-BE3 under short-duration pulses?

The typical junction-to-ambient thermal resistance (R_thJA) for SI2324DS-T1-BE3 is 75 °C/W for pulse durations ≤5 seconds, per the Thermal Resistance Ratings table. This value applies to surface mounting on 1" × 1" FR4 board with standard copper coverage. For longer durations or smaller pads, R_thJA rises toward the maximum of 100 °C/W. SI2324DS-T1-BE3's R_thJF (junction-to-foot) is 40 °C/W, indicating strong thermal coupling to the drain pad.

How is the avalanche capability of SI2324DS-T1-BE3 validated, and what does it protect against?

SI2324DS-T1-BE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC JESD22-A109, with a single-pulse avalanche energy rating of 1.25 mJ. This validates its ability to absorb inductive energy during abrupt turn-off - such as in relay or solenoid driving - without failure. The test uses L = 0.1 mH and confirms robustness beyond normal SOA limits. SI2324DS-T1-BE3's guaranteed UIS performance eliminates need for external snubbers in many industrial load-switch designs.

SI2324DS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta), 2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 234mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 190 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta), 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2324DS-T1-BE3 FAQ

1.How can I place an order for SI2324DS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2324DS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2324DS-T1-BE3 reliable?

The price and inventory of SI2324DS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2324DS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2324DS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2324DS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2324DS-T1-BE3?

SI2324DS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2324DS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2324DS-T1-BE3?

For technical support, including SI2324DS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2324DS-T1-BE3 requirements.

6.How does Aetrix verify that SI2324DS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2324DS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2324DS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2324DS-T1-BE3?

All SI2324DS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2324DS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2324DS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2324DS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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