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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2325DS-T1-BE3

Name: SI2325DS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2325DS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2325DS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2325DS-T1-BE3.pdf

Description:: P-CHANNEL 150-V (D-S) MOSFET

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Product details

Overview

SI2325DS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -150 V drain-source voltage, 1.2 Ω R_DS(on) at V_GS = -10 V, -0.69 A continuous drain current (T_J = 150 °C), and 7.7 nC total gate charge. It serves as a high-voltage active clamp switch in isolated DC/DC power supplies.

For engineers reviewing the SI2325DS-T1-BE3 datasheet, SI2325DS-T1-BE3 pinout, SI2325DS-T1-BE3 application, or SI2325DS-T1-BE3 equivalent, key selection criteria include verified -150 V breakdown rating, low gate charge for fast switching in clamp circuits, thermal resistance of 120 °C/W (steady-state), and SOT-23 package compatibility with space-constrained board layouts.

Technical Context

This device operates as a single P-channel silicon MOSFET using trench-gate technology to achieve ultra-low on-resistance at high blocking voltage. Its gate threshold voltage range (-2.5 V to -4.5 V) ensures reliable turn-on with standard logic-level negative gate drive, and its body diode exhibits 0.7–1.2 V forward voltage at -1.0 A.

The MOSFET supports pulsed avalanche energy up to 1.01 mJ and features input capacitance (C_iss) of 340–510 pF at V_DS = -25 V. Its safe operating area is limited by R_DS(on) at short durations and by BVDSS at higher voltages, with maximum junction temperature rated to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - Withstands full isolation barrier voltage in flyback and forward converters
R_DS(on)	1.2 Ω @ V_GS = -10 V - Enables <1 W conduction loss at 0.69 A in clamp path
I_D (cont)	-0.69 A @ T_J = 150 °C - Supports sustained clamp current in thermally managed designs
Q_g	7.7 nC (typ.) - Reduces gate drive power and enables >1 MHz switching in resonant clamp topologies
V_GS(th)	-2.5 to -4.5 V - Ensures robust turn-on margin with ±10 V gate drivers
C_iss	340–510 pF - Determines Miller effect and gate drive loop stability in high-dV/dt environments
T_J Range	-55 to +150 °C - Qualified for industrial and telecom power supply ambient conditions

Pinout & Package

SI2325DS-T1-BE3 is housed in a surface-mount SOT-23 (TO-236) package with 3 terminals: Gate (Pin 1), Source (Pin 2), Drain (Pin 3). The package measures 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Receives negative gate drive signal; requires ≤±20 V absolute rating and low-impedance driver due to 9 Ω internal gate resistance
Source (Pin 2)	Reference node	Serves as return path for load current and gate drive; connects directly to clamp circuit ground or floating node
Drain (Pin 3)	Power output terminal	Connects to transformer primary or high-side rail; electrically isolated from PCB ground via package thermal pad (R_thJF = 40–50 °C/W)

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 1.2 Ω R_DS(on) at -150 V, enabling compact high-voltage switching without paralleling devices
Halogen-free construction	Complies with IEC 61249-2-21; suitable for RoHS-compliant industrial and telecom end equipment
Low Q_gd/Q_g ratio	2.5/7.7 ≈ 32% - Improves hard-switching efficiency and reduces voltage overshoot during turn-off
Body diode Q_rr	90–135 nC - Minimizes reverse recovery losses when used in synchronous clamp configurations
100% R_g tested	Guarantees consistent 9 Ω gate resistance across production lots, simplifying gate driver design

Applications

Active Clamp Flyback Converter	Isolated Forward Converter
Use Scenario: High-efficiency 48 V input telecom power supply operating at 300–500 kHz with tight regulation requirements. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active clamp switch across transformer primary to recycle leakage energy and limit voltage stress. Use Value: -150 V rating absorbs reflected voltage spikes; 7.7 nC Q_g enables precise timing control of clamp pulse width without excessive gate drive loss.	Use Scenario: Industrial 24 V DC input power module delivering 12 V/10 A output with reinforced isolation and low EMI. IC Role / Device Role / Timing Role: High-side clamp switch synchronized to main power FET to reset transformer core and suppress ringing. Use Value: 1.2 Ω R_DS(on) limits conduction loss during clamp conduction phase; SOT-23 footprint allows placement near transformer for minimal loop inductance.
High-Voltage LED Driver	Capacitor-Charge Circuit
Use Scenario: Constant-current LED string driver for street lighting with 100–150 V bus voltage and PWM dimming. IC Role / Device Role / Timing Role: P-channel switch controlling capacitor discharge into LED load during dimming cycle. Use Value: -150 V V_DS withstands open-circuit bus transients; -4.5 V max V_GS(th) ensures clean turn-on with microcontroller GPIO.	Use Scenario: Precision energy storage system charging high-voltage film capacitors from 100 V DC source. IC Role / Device Role / Timing Role: Controlled high-voltage switch regulating charge current into capacitor bank. Use Value: Low C_iss (340 pF) minimizes capacitive loading on charge controller; 1.01 mJ avalanche rating protects against overvoltage during fault events.

Active Clamp Flyback Converter

Isolated Forward Converter

Use Scenario: High-efficiency 48 V input telecom power supply operating at 300–500 kHz with tight regulation requirements.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active clamp switch across transformer primary to recycle leakage energy and limit voltage stress.

Use Value: -150 V rating absorbs reflected voltage spikes; 7.7 nC Q_g enables precise timing control of clamp pulse width without excessive gate drive loss.

Use Scenario: Industrial 24 V DC input power module delivering 12 V/10 A output with reinforced isolation and low EMI.

IC Role / Device Role / Timing Role: High-side clamp switch synchronized to main power FET to reset transformer core and suppress ringing.

Use Value: 1.2 Ω R_DS(on) limits conduction loss during clamp conduction phase; SOT-23 footprint allows placement near transformer for minimal loop inductance.

High-Voltage LED Driver

Capacitor-Charge Circuit

Use Scenario: Constant-current LED string driver for street lighting with 100–150 V bus voltage and PWM dimming.

IC Role / Device Role / Timing Role: P-channel switch controlling capacitor discharge into LED load during dimming cycle.

Use Value: -150 V V_DS withstands open-circuit bus transients; -4.5 V max V_GS(th) ensures clean turn-on with microcontroller GPIO.

Use Scenario: Precision energy storage system charging high-voltage film capacitors from 100 V DC source.

IC Role / Device Role / Timing Role: Controlled high-voltage switch regulating charge current into capacitor bank.

Use Value: Low C_iss (340 pF) minimizes capacitive loading on charge controller; 1.01 mJ avalanche rating protects against overvoltage during fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2323DS-T1-BE3	-100 V V_DS, 0.45 Ω R_DS(on) @ -10 V, lower Q_g (5.2 nC)	Not rated for >-120 V operation; unsuitable for 48 V+ input flyback clamps	Select only if system maximum V_DS stress remains below -100 V and lower on-resistance is prioritized
DMN3026LSD-13	-30 V V_DS, 0.035 Ω R_DS(on) @ -10 V, 10.5 nC Q_g	Insufficient blocking voltage for clamp circuits above 40 V; optimized for low-voltage synchronous rectification	Use only in sub-30 V auxiliary rails or gate-drive bootstrap paths where voltage stress is minimal

Compared with Si2323DS-T1-BE3 and DMN3026LSD-13, SI2325DS-T1-BE3 uniquely balances -150 V capability with sub-2 Ω on-resistance in SOT-23, making it the only viable option among the three for active clamp topologies in 48–72 V input DC/DC converters requiring minimal board area.

Availability

SI2325DS-T1-BE3 is available at Aetrix Electronics and suitable for active clamp flyback converters, isolated forward power supplies, and high-voltage LED drivers requiring stable component supply, long-term lifecycle support, and traceable halogen-free sourcing.

Supply support for SI2325DS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si2325DS belongs to Vishay's TrenchFET® P-channel high-voltage MOSFET product line, engineered specifically for active clamp, snubber, and high-side switching in isolated DC/DC power conversion systems up to 150 V.

FAQ

What is the maximum continuous drain current rating for SI2325DS-T1-BE3 at 70 °C ambient?

The SI2325DS-T1-BE3 supports -0.55 A continuous drain current at T_A = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This value reflects derating from the -0.69 A rating at 25 °C due to thermal resistance limitations (R_thJA = 120 °C/W). Actual current capability depends on PCB copper area, airflow, and layout; the device must remain within its 150 °C maximum junction temperature limit.

Does SI2325DS-T1-BE3 have a specified avalanche energy rating?

Yes, the SI2325DS-T1-BE3 is rated for 1.01 mJ single-pulse avalanche energy (E_AS) with L = 1.0 mH. This specification applies under defined test conditions and confirms the device's ability to absorb transient overvoltage energy without failure-critical for active clamp circuits where leakage inductance causes voltage spikes. Repeated avalanche operation is not recommended.

What is the gate-to-source leakage current specification for SI2325DS-T1-BE3?

The SI2325DS-T1-BE3 specifies ±100 nA maximum gate-to-source leakage current (I_GSS) at V_GS = ±20 V and T_J = 25 °C. This low leakage ensures minimal gate drive current requirement and stable biasing in high-impedance gate networks, supporting reliable operation in low-power control stages of power supplies.

Can SI2325DS-T1-BE3 be used in place of an N-channel MOSFET in an active clamp circuit?

No-SI2325DS-T1-BE3 is a P-channel device and requires negative gate-to-source voltage for turn-on, unlike N-channel MOSFETs that need positive V_GS. Its circuit implementation differs fundamentally: it connects source to the high-voltage rail and drain to the clamp capacitor, enabling self-driven operation in certain topologies. Substituting it for an N-channel part would require complete gate drive redesign and layout revision.

What is the typical reverse transfer capacitance (C_rss) of SI2325DS-T1-BE3 and why does it matter?

The SI2325DS-T1-BE3 has a typical reverse transfer capacitance (C_rss) of 16 pF at V_DS = -25 V. This parameter directly affects Miller effect during switching transitions-lower C_rss reduces gate drive demand and improves immunity to dv/dt-induced false turn-on, which is essential for stable operation in high-frequency active clamp circuits with steep voltage edges.

SI2325DS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 530mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2325DS-T1-BE3 FAQ

1.How can I place an order for SI2325DS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2325DS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2325DS-T1-BE3 reliable?

The price and inventory of SI2325DS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2325DS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2325DS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2325DS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2325DS-T1-BE3?

SI2325DS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2325DS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2325DS-T1-BE3?

For technical support, including SI2325DS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2325DS-T1-BE3 requirements.

6.How does Aetrix verify that SI2325DS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2325DS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2325DS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2325DS-T1-BE3?

All SI2325DS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2325DS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2325DS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2325DS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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