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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2328DS-T1-BE3

Name: SI2328DS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2328DS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2328DS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2328DS-T1-BE3.pdf

Description:: N-CHANNEL 100-V (D-S) MOSFET

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Product details

Overview

SI2328DS-T1-BE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in SOT-23 (TO-236) package, with R_DS(on) = 0.250 Ω at V_GS = 10 V, continuous drain current I_D = 1.5 A at T_A = 25 °C, and gate threshold voltage V_GS(th) = 2–4 V - used for low-side switching in DC-DC converters and load management circuits.

For engineers reviewing the SI2328DS-T1-BE3 datasheet, SI2328DS-T1-BE3 pinout, SI2328DS-T1-BE3 application, or SI2328DS-T1-BE3 equivalent, key selection criteria include its 100 V breakdown rating, 0.25 Ω on-resistance at 10 V drive, 1.5 A thermal-limited current, SOT-23 footprint compatibility, and halogen-free/RoHS-compliant construction per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 3.3–5 nC and t_d(on)/t_r/t_d(off)/t_f = 7–11/11–17/9–15/10–15 ns under standard test conditions (V_DD = 50 V, R_g = 6 Ω).

It features integrated body diode with V_SD = 0.8–1.2 V at I_S = 1 A, supports unclamped inductive switching (UIS) with E_AS = 1.8 mJ, and is rated for operation from −55 °C to +150 °C junction temperature with R_thJA = 130–170 °C/W (steady state).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with safety margin in buck converters and power switches
R_DS(on)	0.250 Ω at V_GS = 10 V - enables ≤0.56 W conduction loss at 1.5 A, suitable for thermally constrained PCBs
I_D (continuous)	1.5 A at T_A = 25 °C - defines maximum steady-state load current on standard FR4 with 1" × 1" copper pad
V_GS(th)	2–4 V - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers
Q_g	3.3–5 nC - determines gate drive power and switching speed in PWM applications
P_D	1.25 W at T_A = 25 °C - sets thermal design baseline for derating above ambient
E_AS	1.8 mJ - quantifies energy-handling capability during inductive turn-off transients

Pinout & Package

Package: SOT-23 (TO-236), surface-mount, 3-lead plastic package with standardized footprint (D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm pitch).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts logic-level voltage (0–10 V); requires <2.4 Ω gate resistance to limit ringing and overshoot
2 (Source)	Reference node / return path	Common connection point for load return and gate driver reference; ties to system ground in low-side configuration
3 (Drain)	Power output terminal	Connects to switched load or inductor; carries full load current and must be routed with adequate copper area for thermal dissipation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling compact SOT-23 packaging without sacrificing voltage rating
100 % R_g and UIS tested	Ensures gate resistance consistency (0.5–2.4 Ω) and validated avalanche ruggedness for reliability in inductive switching
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer, industrial, and automotive supply chains
Low Q_gd/Q_gs ratio	Q_gd = 1.45 nC, Q_gs = 0.47 nC - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments

Applications

DC-DC Buck Converter	USB Load Switch
Use Scenario: Step-down regulation from 12 V or 24 V input to 3.3 V/5 V for microcontrollers and sensors. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency. Use Value: 0.250 Ω R_DS(on) reduces conduction loss by >60 % vs. typical 0.4 V Schottky drop at 1 A, increasing light-load efficiency.	Use Scenario: Controlled power-up of USB peripherals with inrush current limiting and fault isolation. IC Role / Device Role: Single-N-channel load switch with logic-level gate control. Use Value: V_GS(th) = 2–4 V allows direct drive from 3.3 V GPIO; 100 V rating provides margin against USB transient surges.
LED Driver Current Sink	Industrial Sensor Interface
Use Scenario: Constant-current driving of indicator or status LEDs in PLC modules and HMI panels. IC Role / Device Role: Low-side current sink switch with PWM dimming capability. Use Value: Fast switching (t_f ≤ 15 ns) supports >100 kHz PWM without visible flicker; 1.5 A rating handles multi-LED strings.	Use Scenario: Isolating analog sensor outputs (e.g., 4–20 mA loop) during system reset or fault conditions. IC Role / Device Role: Precision-controlled power switch in signal conditioning front-end. Use Value: Tight V_GS(th) distribution (±0.3 V) ensures consistent turn-on across temperature, critical for sensor bias stability.

DC-DC Buck Converter

USB Load Switch

Use Scenario: Step-down regulation from 12 V or 24 V input to 3.3 V/5 V for microcontrollers and sensors.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency.

Use Value: 0.250 Ω R_DS(on) reduces conduction loss by >60 % vs. typical 0.4 V Schottky drop at 1 A, increasing light-load efficiency.

Use Scenario: Controlled power-up of USB peripherals with inrush current limiting and fault isolation.

IC Role / Device Role: Single-N-channel load switch with logic-level gate control.

Use Value: V_GS(th) = 2–4 V allows direct drive from 3.3 V GPIO; 100 V rating provides margin against USB transient surges.

LED Driver Current Sink

Industrial Sensor Interface

Use Scenario: Constant-current driving of indicator or status LEDs in PLC modules and HMI panels.

IC Role / Device Role: Low-side current sink switch with PWM dimming capability.

Use Value: Fast switching (t_f ≤ 15 ns) supports >100 kHz PWM without visible flicker; 1.5 A rating handles multi-LED strings.

Use Scenario: Isolating analog sensor outputs (e.g., 4–20 mA loop) during system reset or fault conditions.

IC Role / Device Role: Precision-controlled power switch in signal conditioning front-end.

Use Value: Tight V_GS(th) distribution (±0.3 V) ensures consistent turn-on across temperature, critical for sensor bias stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 0.165 Ω @ 4.5 V (lower drive voltage), V_DS = 20 V (lower voltage rating)	Not suitable for 100 V bus applications; better for 5–12 V logic-supply switching	Select when gate drive is limited to 3.3–4.5 V and voltage stress is ≤20 V
AO3400	R_DS(on) = 0.042 Ω @ 10 V, V_DS = 30 V, I_D = 5.7 A - higher current, lower voltage, smaller R_DS(on)	Cannot replace SI2328DS-T1-BE3 in 100 V systems; suited for high-efficiency 5–12 V DC-DC stages	Choose for higher current density where 30 V rating suffices and thermal headroom is available

Compared with DMN2016LFG-7 and AO3400, SI2328DS-T1-BE3 uniquely balances 100 V blocking capability, logic-level gate drive, and SOT-23 form factor - making it the only option among the three for space-constrained 24–80 V industrial power switches requiring ≥1.5 A current and ≥1.8 mJ avalanche energy.

Availability

SI2328DS-T1-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, USB load switches, LED drivers, and industrial sensor interfaces requiring stable component supply and long-term manufacturability.

Supply support for SI2328DS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si2328DS belongs to Vishay's TrenchFET® Gen III family, engineered for high-voltage, low-R_DS(on) performance in compact surface-mount packages targeting industrial power management and embedded control systems.

FAQ

What is the maximum continuous drain current for SI2328DS-T1-BE3 at 70 °C ambient?

The SI2328DS-T1-BE3 supports 0.92 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied. This reflects thermal limitation due to R_thJA = 130–170 °C/W and junction-to-ambient power dissipation constraints. Designers must verify PCB copper area and airflow to sustain this current reliably in end equipment.

Is SI2328DS-T1-BE3 suitable for 3.3 V logic-level gate drive?

Yes, SI2328DS-T1-BE3 has a gate threshold voltage V_GS(th) of 2–4 V, allowing turn-on with 3.3 V logic signals. However, full enhancement (R_DS(on) = 0.250 Ω) requires V_GS = 10 V; at 3.3 V, R_DS(on) rises significantly (typical ~1.2 Ω). For robust low-R_DS(on) operation, use a gate driver or level shifter to deliver ≥4.5 V - the SI2328DS-T1-BE3 datasheet confirms usable conduction down to 4.5 V, though not fully specified.

Does SI2328DS-T1-BE3 have avalanche rating, and how is it tested?

Yes, SI2328DS-T1-BE3 is rated for unclamped inductive switching with single-pulse avalanche energy E_AS = 1.8 mJ and peak avalanche current I_AS = 6 A (L = 0.1 mH). Per Vishay documentation, all units undergo 100 % UIS testing - a production screen that validates ruggedness under worst-case inductive turn-off stress, ensuring reliability in motor drives and relay snubbers where flyback energy must be absorbed internally.

What is the thermal resistance from junction to foot (R_thJF) for SI2328DS-T1-BE3?

The SI2328DS-T1-BE3 has a maximum junction-to-foot thermal resistance R_thJF of 55 °C/W under steady-state conditions. This parameter measures heat flow from die to the SOT-23 leadframe (pin 2/source), enabling accurate thermal modeling when the source pad is soldered to a large copper pour or thermal via array. It is lower than R_thJA, confirming that heatsinking through the source lead is more effective than ambient convection alone.

How does the halogen-free status of SI2328DS-T1-BE3 impact compliance?

The SI2328DS-T1-BE3 is halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC, meaning it contains no brominated or chlorinated flame retardants above threshold limits. This satisfies environmental requirements for CE marking, IPC-1752 material declarations, and green procurement policies in EU, China, and North America - critical for medical, industrial, and consumer products undergoing sustainability audits.

SI2328DS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 730mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2328DS-T1-BE3 FAQ

1.How can I place an order for SI2328DS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2328DS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2328DS-T1-BE3 reliable?

The price and inventory of SI2328DS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2328DS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2328DS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2328DS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2328DS-T1-BE3?

SI2328DS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2328DS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2328DS-T1-BE3?

For technical support, including SI2328DS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2328DS-T1-BE3 requirements.

6.How does Aetrix verify that SI2328DS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2328DS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2328DS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2328DS-T1-BE3?

All SI2328DS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2328DS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2328DS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2328DS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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