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Vishay Siliconix SI2333DS-T1-BE3
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- Part No.:
- SI2333DS-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2333DS-T1-BE3.pdf
- Description:
- P-CHANNEL 12-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,030
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Product details
Overview
SI2333DS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -12 V drain-source voltage, 0.032 Ω RDS(on) at VGS = -4.5 V and -5.3 A continuous drain current at TA = 25 °C, designed for low-voltage load switching in portable power management circuits.
For engineers reviewing the SI2333DS-T1-BE3 datasheet, SI2333DS-T1-BE3 pinout, SI2333DS-T1-BE3 application, or SI2333DS-T1-BE3 equivalent, key selection criteria include guaranteed RDS(on) at low gate drive (-1.8 V to -4.5 V), SOT-23 package thermal performance (RthJA = 120 °C/W steady-state), and integrated body diode forward voltage of -0.7 V to -1.2 V at -1.0 A.
Technical Context
This discrete P-channel MOSFET operates in enhancement mode with a gate-threshold voltage range of -0.40 V to -1.0 V, enabling reliable turn-on from standard logic-level supplies. Its trench-based silicon structure delivers low on-resistance and fast switching, with total gate charge of 11.5–18 nC and input capacitance of 1100 pF at VDS = -6 V.
The device supports pulsed drain currents up to -20 A and features a maximum junction temperature of 150 °C. Thermal resistance from junction to foot (RthJF) is 40–50 °C/W, confirming suitability for PCB-mounted thermal relief via the drain-connected tab in SOT-23 packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-side or high-side switch configurations in ≤12 V systems |
| RDS(on) | 0.032 Ω at VGS = -4.5 V, ID = -5.3 A - Enables <170 mW conduction loss at full rated current |
| ID (continuous) | -5.3 A at TA = 25 °C - Supports compact load switches in space-constrained DC/DC or battery path designs |
| VGS(th) | -0.40 to -1.0 V - Ensures robust turn-on with 1.8 V or higher logic outputs without level shifting |
| Qg | 11.5–18 nC - Low gate charge enables efficient PWM control at ≥1 MHz with minimal driver power |
| VSD | -0.7 to -1.2 V at IS = -1.0 A - Body diode supports synchronous rectification or reverse-polarity protection |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3 leads; drain-connected tab provides thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal | Reference node for gate drive; connects to system ground or positive rail depending on switch topology |
| 2 (Gate) | Control input | Accepts negative gate-source voltage to turn on; threshold confirmed down to -0.4 V |
| 3 (Drain) | Power output / high-current path | Internally connected to package tab; must be soldered to thermal pad for RthJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.032 Ω RDS(on) in SOT-23, reducing conduction loss by >35% vs. planar P-MOSFETs at same rating |
| Low VGS(th) range | -0.40 V to -1.0 V ensures turn-on with 1.8 V microcontroller GPIO, eliminating need for gate driver ICs |
| Halogen-free construction | Complies with IEC 61249-2-21; suitable for RoHS-compliant consumer and industrial assemblies |
| Integrated body diode | VSD = -0.7 to -1.2 V at -1.0 A supports reverse-current protection and flyback energy handling |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side switch controlling battery discharge path. Use Value: Low 0.032 Ω RDS(on) minimizes voltage drop across protection FET, preserving usable battery capacity and runtime. |
Use Scenario: Hot-swap enable/disable of USB VBUS power to peripheral devices. IC Role / Device Role / Timing Role: Load switch isolating downstream USB ports during insertion/removal or fault conditions. Use Value: Fast 25–40 ns turn-on time and low gate charge allow clean, bounce-free power sequencing without inrush spikes. |
| RF Power Amplifier Bias Control | Industrial Sensor Node Power Gating |
Use Scenario: Enabling/disabling bias voltage to GaAs or SiGe RF power amplifiers in cellular modules. IC Role / Device Role / Timing Role: High-speed P-MOSFET switch controlling PA supply rail under baseband processor command. Use Value: Guaranteed -1.0 V VGS(th) ensures full turn-on even with degraded gate drive due to PCB trace resistance or noise. |
Use Scenario: Ultra-low-quiescent-power shutdown of sensor subsystems in battery-operated IoT nodes. IC Role / Device Role / Timing Role: Low-leakage P-channel switch disconnecting sensors during sleep mode. Use Value: IDSS ≤ -1 µA at -9.6 V ensures <100 nA system standby current, extending multi-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ VGS = -4.5 V; higher Qg (22 nC); same SOT-23 package | Higher conduction loss and slower switching; acceptable where efficiency is secondary to cost | Select DMG2305UVT-7 only if board layout allows marginally higher thermal rise and timing budget permits longer transition times. |
| AO3401 | RDS(on) = 0.052 Ω @ VGS = -4.5 V; VGS(th) = -0.7 to -1.3 V; slightly wider threshold distribution | Less predictable turn-on at marginal gate voltages; requires tighter VGS control in 1.8 V systems | Choose AO3401 only when existing qualification data exists for that part in identical thermal environment and gate drive profile. |
Compared with DMG2305UVT-7 and AO3401, SI2333DS-T1-BE3 delivers the lowest RDS(on) and tightest VGS(th) window in SOT-23, making it optimal for high-efficiency, low-voltage load switching where gate drive headroom is limited and thermal margin is constrained.
Availability
SI2333DS-T1-BE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, RF amplifier bias control, and industrial sensor node power gating requiring stable component supply and consistent lead-free halogen-free compliance.
Supply support for SI2333DS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI2333DS-T1-BE3 belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered specifically for high-efficiency, low-voltage load switching in portable, battery-powered, and space-constrained applications.
FAQ
What is the maximum continuous drain current for SI2333DS-T1-BE3 at 70 °C ambient temperature?
The SI2333DS-T1-BE3 supports -4.2 A continuous drain current at TA = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-23 package with standard FR4 mounting; actual capability may improve with enhanced PCB copper area or forced airflow. The SI2333DS-T1-BE3 datasheet confirms this value under "Continuous Drain Current (TJ = 150 °C)" with ambient temperature condition noted.
Does SI2333DS-T1-BE3 have a guaranteed RDS(on) at VGS = -2.5 V?
Yes, the SI2333DS-T1-BE3 guarantees RDS(on) ≤ 0.042 Ω at VGS = -2.5 V and ID = -4.6 A, per the Product Summary table. This specification ensures functional operation with 2.5 V logic families and enables use in systems where gate drive voltage is constrained by regulator output or level-shifter limitations. The SI2333DS-T1-BE3 maintains this performance across its qualified temperature range.
Is SI2333DS-T1-BE3 suitable for reverse-polarity protection in 5 V systems?
Yes, the SI2333DS-T1-BE3 is suitable for reverse-polarity protection in 5 V systems due to its -12 V VDS rating and low RDS(on). When placed in the high-side position with source tied to input and drain to load, it blocks reverse current while adding only ~160 mV drop at 5 A. The SI2333DS-T1-BE3 body diode does not conduct during normal forward operation, ensuring no parasitic path. Its -0.40 V minimum VGS(th) ensures reliable turn-on with typical 5 V supply rails.
What is the thermal resistance from junction to ambient for SI2333DS-T1-BE3 under steady-state conditions?
The SI2333DS-T1-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 166 °C/W under steady-state conditions on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. The typical value is 120 °C/W. This parameter directly determines allowable power dissipation: at 150 °C max junction temperature and 25 °C ambient, the SI2333DS-T1-BE3 can dissipate up to 0.75 W continuously. Layout improvements (e.g., larger copper pours) reduce effective RthJA in practice.
How does the SI2333DS-T1-BE3 body diode forward voltage compare to discrete Schottky diodes?
The SI2333DS-T1-BE3 body diode exhibits VSD = -0.7 to -1.2 V at -1.0 A, which is higher than typical Schottky diodes (0.3–0.5 V), but sufficient for reverse-current blocking and flyback clamping in low-duty-cycle applications. Unlike external Schottky diodes, the SI2333DS-T1-BE3 body diode shares the same die and thermal environment, simplifying layout and eliminating extra components. Its performance is fully characterized and guaranteed across temperature in the SI2333DS-T1-BE3 datasheet.
SI2333DS-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 32mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2333DS-T1-BE3 FAQ
1.How can I place an order for SI2333DS-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2333DS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2333DS-T1-BE3 reliable?
The price and inventory of SI2333DS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2333DS-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI2333DS-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2333DS-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2333DS-T1-BE3?
SI2333DS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2333DS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2333DS-T1-BE3?
For technical support, including SI2333DS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2333DS-T1-BE3 requirements.
6.How does Aetrix verify that SI2333DS-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI2333DS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2333DS-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI2333DS-T1-BE3?
All SI2333DS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2333DS-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2333DS-T1-BE3 part is unused and in its original packaging.
Return procedure for SI2333DS-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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