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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2334DS-T1-GE3

Name: SI2334DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2334DS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2334DS-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2334DS-T1-GE3.pdf

Description:: MOSFET N-CH 30V 4.9A SOT23-3

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Product details

Overview

SI2334DS-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SOT-23 (TO-236) package, rated for 4.9 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.044 Ω at V_GS = 4.5 V and Q_g = 3.7 nC - optimized for load switching and DC/DC converter applications in portable electronics.

For engineers reviewing the SI2334DS-T1-GE3 datasheet, SI2334DS-T1-GE3 pinout, SI2334DS-T1-GE3 application, or SI2334DS-T1-GE3 equivalent, key selection criteria include its low gate charge for fast switching, 30 V V_DS rating suitable for single-cell Li-ion systems, halogen-free and RoHS-compliant construction, and thermal resistance of 100 °C/W (J-A, t ≤ 5 s).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high transconductance (g_fs = 27 S), enabling efficient power switching at low gate drive voltages down to 2.5 V. Its 100 % R_g tested gate resistance (0.5–5.4 Ω) ensures consistent turn-on/turn-off timing across production lots.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 3.4 A and t_rr = 11–20 ns, supporting synchronous rectification and reverse recovery in buck converters. Thermal design is supported by validated junction-to-foot (R_thJF = 60–75 °C/W) and junction-to-ambient (R_thJA = 80–100 °C/W) metrics under defined PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 28 V DC in portable power systems
R_DS(on)	0.044 Ω at V_GS = 4.5 V - enables <180 mW conduction loss at 4.2 A
I_D (continuous)	4.9 A at T_C = 25 °C - suitable for medium-current load switches
Q_g	3.7 nC at V_GS = 2.5 V - allows fast switching with low-drive microcontrollers
V_GS(th)	0.4–1.0 V - ensures reliable enhancement-mode turn-on with logic-level gate drivers
t_r/t_f	10–20 ns / 8–16 ns - supports >1 MHz PWM operation in compact DC/DC designs
R_thJA	100 °C/W (max, t ≤ 5 s) - defines thermal derating on standard FR4 PCBs

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 leads: Drain (D), Gate (G), Source (S); dimensions per Vishay Doc. 71196 - D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm (BSC), L = 0.40–0.60 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤ ±8 V drive; 100 % R_g tested
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch
3 (D)	Drain	High-side connection to load or supply rail; thermally coupled to package foot for heatsinking

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.044 Ω R_DS(on) at 4.5 V in SOT-23 - highest power density among 30 V SOT-23 MOSFETs in its class
100 % R_g tested	Ensures gate resistance between 0.5–5.4 Ω - critical for predictable switching timing in battery-powered systems
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for CE-marked portable consumer devices
Low V_GS(th) range	0.4–1.0 V threshold enables direct drive from 1.8 V/2.5 V/3.3 V GPIO without level-shifting
Body diode t_rr	11–20 ns reverse recovery time - reduces switching losses in synchronous buck topologies

Applications

Portable DC/DC Converters	Load Switching
Use Scenario: Step-down conversion in smartphones and wearables using single-cell Li-ion (2.7–4.2 V) input. IC Role / Device Role: Low-side synchronous rectifier in buck converter output stage. Use Value: 0.044 Ω R_DS(on) and 3.7 nC Q_g minimize conduction and switching losses, extending battery runtime.	Use Scenario: Controlled power-up of USB peripherals or display modules in tablets. IC Role / Device Role: High-side or low-side load switch isolating downstream circuitry. Use Value: 30 V V_DS margin accommodates transient spikes; low V_GS(th) allows direct MCU control.
Power Bank Output Stage	USB-C Power Delivery Sink
Use Scenario: Output overcurrent protection and soft-start in multi-bank portable chargers. IC Role / Device Role: Main pass transistor in adjustable current-limit load switch. Use Value: 4.9 A continuous rating and 10 A pulsed capability support 15 W output delivery.	Use Scenario: VBUS path control in USB-C receptacles accepting up to 20 V input. IC Role / Device Role: Input-side protection switch before PD controller and DC/DC stages. Use Value: 30 V rating provides 10 V headroom above 20 V PD max; halogen-free compliance meets end-equipment standards.

Portable DC/DC Converters

Load Switching

Use Scenario: Step-down conversion in smartphones and wearables using single-cell Li-ion (2.7–4.2 V) input.

IC Role / Device Role: Low-side synchronous rectifier in buck converter output stage.

Use Value: 0.044 Ω R_DS(on) and 3.7 nC Q_g minimize conduction and switching losses, extending battery runtime.

Use Scenario: Controlled power-up of USB peripherals or display modules in tablets.

IC Role / Device Role: High-side or low-side load switch isolating downstream circuitry.

Use Value: 30 V V_DS margin accommodates transient spikes; low V_GS(th) allows direct MCU control.

Power Bank Output Stage

USB-C Power Delivery Sink

Use Scenario: Output overcurrent protection and soft-start in multi-bank portable chargers.

IC Role / Device Role: Main pass transistor in adjustable current-limit load switch.

Use Value: 4.9 A continuous rating and 10 A pulsed capability support 15 W output delivery.

Use Scenario: VBUS path control in USB-C receptacles accepting up to 20 V input.

IC Role / Device Role: Input-side protection switch before PD controller and DC/DC stages.

Use Value: 30 V rating provides 10 V headroom above 20 V PD max; halogen-free compliance meets end-equipment standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.035 Ω @ 4.5 V, but larger SOT-26 package with 6 pins and dual-channel configuration	Requires PCB redesign; suited for dual-switch or integrated gate driver layouts	Select if dual-N or lower R_DS(on) justifies footprint change and higher cost
AO3400	R_DS(on) = 0.028 Ω @ 4.5 V, same SOT-23 package, but V_GS(th) = 0.7–1.4 V and no 100 % R_g test	Higher threshold may require stronger gate drive; less timing predictability in low-voltage systems	Choose when lowest possible on-resistance is prioritized over gate drive margin and timing consistency

Compared with DMN3026LSD-13 and AO3400, the SI2334DS-T1-GE3 offers optimal balance of low gate charge (3.7 nC), guaranteed R_g, and tight V_GS(th) for robust 2.5–3.3 V MCU control - making it preferred for space-constrained, battery-sensitive load switching where timing repeatability matters.

Availability

SI2334DS-T1-GE3 is available at Aetrix Electronics and suitable for portable DC/DC converters, load switching, and USB-C power delivery sink applications requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for SI2334DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.

The SI2334DS-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, low-voltage power management in space-constrained portable electronics.

FAQ

What is the maximum continuous drain current for SI2334DS-T1-GE3 at 70 °C case temperature?

The SI2334DS-T1-GE3 supports 3.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-23 package under typical PCB mounting conditions and must be verified against actual board layout and airflow in the final design. The SI2334DS-T1-GE3 datasheet (Doc. 66802) confirms this value under steady-state conditions.

Does SI2334DS-T1-GE3 support 2.5 V logic-level gate drive?

Yes, the SI2334DS-T1-GE3 is fully characterized at V_GS = 2.5 V, delivering R_DS(on) = 0.050 Ω and Q_g = 3.7 nC. Its V_GS(th) range of 0.4–1.0 V ensures reliable turn-on with 2.5 V microcontroller outputs. The SI2334DS-T1-GE3 maintains usable transconductance (g_fs) and low switching losses even at this voltage, as confirmed in the "On-Resistance vs. Gate-to-Source Voltage" and "Transfer Characteristics" graphs.

What is the thermal resistance from junction to ambient for SI2334DS-T1-GE3?

The SI2334DS-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 100 °C/W for pulse durations ≤ 5 s, measured on a 1" × 1" FR4 board. For steady-state operation, the typical R_thJA is 166 °C/W. These values are critical for calculating safe operating area and temperature rise in the SI2334DS-T1-GE3's target applications, including portable DC/DC converters.

Is SI2334DS-T1-GE3 suitable for synchronous rectification?

Yes, the SI2334DS-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.044 Ω), fast switching (t_r/t_f = 10–20 ns / 8–16 ns), and integrated body diode with t_rr = 11–20 ns. Its 30 V V_DS rating and 4.9 A continuous current support common 5–12 V output rails. The SI2334DS-T1-GE3 body diode forward voltage (V_SD = 0.8–1.2 V) is also documented for design validation.

What does the "-GE3" suffix indicate in SI2334DS-T1-GE3?

The "-GE3" suffix in SI2334DS-T1-GE3 denotes Vishay's lead (Pb)-free and halogen-free packaging per IEC 61249-2-21 and RoHS Directive 2002/95/EC. It specifies matte tin plating on the SOT-23 leads and compliant molding compound. This marking is explicitly stated in the Ordering Information section of the SI2334DS-T1-GE3 datasheet (Document Number 66802), confirming environmental compliance without performance trade-offs.

SI2334DS-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 634 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta), 1.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2334DS-T1-GE3 FAQ

1.How can I place an order for SI2334DS-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2334DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2334DS-T1-GE3 reliable?

The price and inventory of SI2334DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2334DS-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI2334DS-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2334DS-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2334DS-T1-GE3?

SI2334DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2334DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2334DS-T1-GE3?

For technical support, including SI2334DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2334DS-T1-GE3 requirements.

6.How does Aetrix verify that SI2334DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI2334DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2334DS-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI2334DS-T1-GE3?

All SI2334DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2334DS-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2334DS-T1-GE3 part is unused and in its original packaging.

Return procedure for SI2334DS-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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