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Vishay Siliconix SI2343DS-T1-BE3
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- Part No.:
- SI2343DS-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2343DS-T1-BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,110
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Product details
Overview
SI2343DS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.053 Ω RDS(on) at VGS = -10 V and -4.0 A continuous drain current, designed for low-side load switching in space-constrained DC-DC converters and portable power management circuits.
For engineers reviewing the SI2343DS-T1-BE3 datasheet, SI2343DS-T1-BE3 pinout, SI2343DS-T1-BE3 application, or SI2343DS-T1-BE3 equivalent, key selection criteria include guaranteed RDS(on) at -4.5 V gate drive, SOT-23 package thermal resistance (RthJA = 120 °C/W), and integrated body diode forward voltage (VSD = -0.7 V at -1.0 A).
Technical Context
This device operates as a single P-channel switch with gate-threshold voltage ranging from -1 V to -3 V, enabling reliable turn-on with standard logic-level negative gate drive. Its trench-based silicon structure delivers low on-resistance while maintaining fast switching performance: total gate charge is 14–21 nC, and turn-off time is 31–50 ns under specified test conditions.
The MOSFET supports pulsed drain currents up to -15 A and features a thermally optimized SOT-23 package with drain-connected die pad for improved junction-to-foot thermal resistance (RthJF = 40–50 °C/W), critical for sustained operation in high-duty-cycle load-switch applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage before avalanche breakdown |
| RDS(on) | 0.053 Ω at VGS = -10 V, ID = -4.0 A - Enables <100 mW conduction loss at rated current |
| ID (continuous) | -3.1 A at TA = 70 °C - Usable current limit on standard FR4 PCB without heatsink |
| VGS(th) | -1 to -3 V - Ensures full enhancement with common -4.5 V or -5 V control rails |
| Qg | 14–21 nC - Determines gate driver strength requirement for <50 ns switching transitions |
| VSD | -0.7 to -1.2 V at IS = -1.0 A - Defines forward voltage drop during reverse-current conduction |
| RthJA | 120 °C/W (steady state) - Sets maximum power dissipation limit of 0.75 W at 25 °C ambient |
Pinout & Package
Package: SOT-23 (TO-236), surface-mount, 3-lead, drain-connected tab for thermal enhancement. Dimensions per Vishay Doc #71196: D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm (BSC), L = 0.40–0.60 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for load current | Connected to system ground or higher-potential rail depending on switch topology |
| 2 (Gate) | Control terminal for channel modulation | Requires negative voltage relative to source to turn on; threshold range -1 V to -3 V |
| 3 (Drain) | Main current-carrying output terminal | Internally connected to exposed copper pad for thermal conduction to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 25% lower RDS(on) vs. planar P-channel MOSFETs in same SOT-23 footprint |
| Halogen-free construction | Complies with IEC 61249-2-21; suitable for RoHS-compliant industrial and consumer assemblies |
| Low gate charge (Qg) | 14–21 nC enables efficient driving from low-power microcontroller GPIO pins |
| Enhanced thermal pad | Drain-connected die pad reduces RthJF to 40–50 °C/W, improving power handling by ~30% over standard SOT-23 |
| Specified RDS(on) at -4.5 V | 0.086 Ω ensures predictable on-state performance with widely available negative logic supplies |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with integrated protection ICs. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling discharge path between battery and system load. Use Value: 0.053 Ω RDS(on) limits voltage drop to <212 mV at 4 A, preserving battery runtime and reducing thermal stress. | Use Scenario: Hot-swap enable/disable of USB VBUS to peripheral devices in portable hubs and docking stations. IC Role / Device Role / Timing Role: Load switch isolating downstream USB ports during insertion/removal or fault conditions. Use Value: Fast 31–50 ns turn-off time prevents bus glitches during dynamic disconnect events. |
| DC-DC Converter Synchronous Rectifier | PA Bias Control in RF Modules |
Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters operating below 30 V output. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to reduce conduction losses in low-voltage, high-current outputs. Use Value: Integrated body diode with VSD = -0.7 V supports freewheeling during dead-time, minimizing reverse recovery losses. | Use Scenario: Enabling/disabling bias voltage to power amplifier stages in cellular IoT modules and Bluetooth transceivers. IC Role / Device Role / Timing Role: High-speed enable switch controlling PA supply rail in response to transmit/receive state signals. Use Value: Guaranteed -3.1 A current capability at 70 °C ambient ensures stable bias delivery across extended temperature ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG3415L-7 | RDS(on) = 0.045 Ω at VGS = -4.5 V; slightly lower on-resistance but higher Qg (25 nC) | Same SOT-23 package; better efficiency at low gate drive but requires stronger driver | Select when gate drive capability supports >25 nC and sub-45 mΩ RDS(on) is prioritized over switching speed |
| AO3401 | RDS(on) = 0.085 Ω at VGS = -4.5 V; higher on-resistance, lower Qg (12 nC) | Compatible SOT-23 footprint; slower switching but lower driver demand and cost | Select when gate drive is limited to weak GPIOs and 85 mΩ on-resistance is acceptable for thermal budget |
Compared with DMG3415L-7 and AO3401, SI2343DS-T1-BE3 offers balanced performance: mid-range RDS(on) (0.086 Ω @ -4.5 V) and moderate Qg (14–21 nC), making it optimal for designs requiring both efficiency and ease of drive in compact portable systems.
Availability
SI2343DS-T1-BE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC converter synchronous rectifiers, and RF PA bias control requiring stable component supply and lead-free, halogen-free compliance.
Supply support for SI2343DS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si2343DS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for high-efficiency load switching in space-constrained battery-powered and USB-powered applications.
FAQ
What is the maximum continuous drain current rating for SI2343DS-T1-BE3 at 70 °C ambient temperature?
The SI2343DS-T1-BE3 supports -3.2 A continuous drain current at TA = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This value reflects derating due to thermal resistance (RthJA = 120 °C/W) and ensures safe operation without exceeding the 150 °C maximum junction temperature. The SI2343DS-T1-BE3 datasheet specifies this limit explicitly in its Absolute Maximum Ratings table.
Does SI2343DS-T1-BE3 have a specified RDS(on) at -4.5 V gate drive, and what is its value?
Yes, SI2343DS-T1-BE3 has a guaranteed RDS(on) of 0.068–0.086 Ω at VGS = -4.5 V and ID = -3.1 A, as confirmed in the "Static" section of the Vishay datasheet (Doc #72079). This specification makes SI2343DS-T1-BE3 suitable for direct drive from common -4.5 V logic rails without level-shifting circuitry.
Is SI2343DS-T1-BE3 RoHS compliant and halogen-free?
Yes, SI2343DS-T1-BE3 is both RoHS compliant and halogen-free per IEC 61249-2-21. The "-BE3" suffix denotes lead-free (Pb-free) terminations and halogen-free construction, as stated in Vishay's ordering information and product summary. It meets JEDEC J-STD-020 moisture sensitivity level 1 requirements.
What is the thermal resistance from junction to ambient (RthJA) for SI2343DS-T1-BE3 in steady-state operation?
The SI2343DS-T1-BE3 has a maximum steady-state junction-to-ambient thermal resistance (RthJA) of 166 °C/W, with a typical value of 120 °C/W when mounted on a 1" × 1" FR4 board per Vishay's test conditions. This parameter directly determines the maximum allowable power dissipation (0.75 W at 25 °C ambient) before reaching the 150 °C junction limit.
Can SI2343DS-T1-BE3 be used as a synchronous rectifier in a 12 V output DC-DC converter?
Yes, SI2343DS-T1-BE3 is suitable as a synchronous rectifier in ≤12 V output DC-DC converters. Its -30 V VDS rating provides sufficient margin, and its 0.053 Ω RDS(on) at -10 V gate drive reduces conduction losses versus Schottky diodes. The integrated body diode (VSD = -0.7 V) supports freewheeling during dead-time, and the 31–50 ns turn-off time minimizes shoot-through risk in properly timed gate-drive designs.
SI2343DS-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 53mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2343DS-T1-BE3 FAQ
1.How can I place an order for SI2343DS-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2343DS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2343DS-T1-BE3 reliable?
The price and inventory of SI2343DS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2343DS-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI2343DS-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2343DS-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2343DS-T1-BE3?
SI2343DS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2343DS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2343DS-T1-BE3?
For technical support, including SI2343DS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2343DS-T1-BE3 requirements.
6.How does Aetrix verify that SI2343DS-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI2343DS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2343DS-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI2343DS-T1-BE3?
All SI2343DS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2343DS-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2343DS-T1-BE3 part is unused and in its original packaging.
Return procedure for SI2343DS-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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