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Vishay Siliconix SI2343DS-T1-GE3
- Part No.:
- SI2343DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2343DS-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 3.1A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:313
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Product details
Overview
SI2343DS-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.053 Ω RDS(on) at VGS = -10 V and -4.0 A continuous drain current, designed for low-side load switching in space-constrained DC-DC and battery-powered systems.
For engineers reviewing the SI2343DS-T1-GE3 datasheet, SI2343DS-T1-GE3 pinout, SI2343DS-T1-GE3 application, or SI2343DS-T1-GE3 equivalent, key selection criteria include verified RDS(on) at -4.5 V gate drive, thermal resistance (RthJA = 120 °C/W), SOT-23 package footprint compatibility, and halogen-free/RoHS-compliant construction per IEC 61249-2-21.
Technical Context
This device operates as a single P-channel power switch with gate-threshold voltage (VGS(th)) between -1 V and -3 V, enabling robust turn-on with standard logic-level negative gate drive. Its trench-based silicon architecture delivers low gate charge (Qg = 14–21 nC) and fast switching (td(on) = 10–15 ns), supporting high-efficiency synchronous rectification and pulsed load control.
Thermal design is constrained by junction-to-ambient resistance (RthJA = 120 °C/W steady-state) and maximum junction temperature of 150 °C. The integrated body diode exhibits VSD = -0.7 to -1.2 V at -1.0 A, suitable for reverse-polarity protection and flyback energy recovery in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage before avalanche breakdown |
| RDS(on) | 0.053 Ω @ VGS = -10 V, ID = -4.0 A - Low conduction loss at full-rated current |
| ID (continuous) | -4.0 A @ TA = 25 °C - Sustained load current capability on standard FR4 board |
| Qg | 14–21 nC - Gate drive energy requirement for 10–15 ns turn-on time |
| VGS(th) | -1 to -3 V - Ensures reliable enhancement-mode turn-on with logic-compatible gate signals |
| RthJA | 120 °C/W (steady state) - Thermal limit for PCB layout with 1" × 1" copper area |
| VSD | -0.7 to -1.2 V @ IS = -1.0 A - Forward voltage drop of integrated source-drain diode |
Pinout & Package
Package: SOT-23 (TO-236), surface-mount, 3-lead plastic package with standardized 2.80 mm × 2.10 mm footprint and 0.95 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Accepts negative VGS to modulate channel conductivity; threshold -1 to -3 V |
| 2 (Source) | Reference node | Common return path for load current and gate drive reference; tied to system ground in high-side switch configurations |
| 3 (Drain) | Power output | Connects to load or supply rail; carries full switched current and withstands -30 V reverse bias |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.053 Ω RDS(on) in SOT-23, reducing conduction loss vs. planar MOSFETs of same size |
| Halogen-free construction | Complies with IEC 61249-2-21, eliminating brominated flame retardants without compromising thermal performance |
| Low Qg/Qgd ratio | Qgd = 3.7 nC of total Qg = 14–21 nC - Improves switching efficiency and reduces Miller-induced shoot-through risk |
| Specified RDS(on) at -4.5 V | 0.086 Ω @ VGS = -4.5 V, ID = -3.1 A - Guarantees usable on-resistance with common negative logic drivers |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in portable Li-ion battery packs using discrete MOSFET control. IC Role / Device Role / Timing Role: P-channel MOSFET configured as low-side switch to disconnect battery during fault conditions. Use Value: 0.053 Ω RDS(on) minimizes voltage drop across protection FET, preserving battery runtime and thermal margin. | Use Scenario: Hot-swap power enable/disable for USB peripheral ports in embedded host controllers. IC Role / Device Role / Timing Role: Load switch controlling 5 V VBUS delivery with controlled inrush and fast turn-off. Use Value: 14–21 nC gate charge enables clean 10–15 ns turn-on/turn-off transitions, limiting inrush current spikes. |
| DC-DC Converter Synchronous Rectifier | Industrial Sensor Node Power Gating |
Use Scenario: Secondary-side synchronous rectification in isolated buck-derived converters for industrial sensors. IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction losses in 3.3 V/5 V output stages. Use Value: Integrated body diode with VSD = -0.7 to -1.2 V provides safe freewheeling path during dead-time intervals. | Use Scenario: Periodic power cycling of analog sensor front-ends in ultra-low-power wireless nodes. IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating sensor supply rails during sleep mode. Use Value: Gate leakage < ±100 nA ensures minimal standby current draw, extending battery life in multi-year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(on) = 0.045 Ω @ -4.5 V (lower), Qg = 12 nC (lower), same SOT-23 package | Better efficiency at lower gate drive; slightly higher cost and narrower VGS rating (-12 V max) | Prefer DMG2305U-7 when optimizing for -4.5 V drive and sub-10 ns switching in battery-sensitive designs. |
| AO3401 | RDS(on) = 0.085 Ω @ -4.5 V (higher), Qg = 22 nC (higher), same SOT-23 footprint | Higher conduction loss and slower switching; broader availability and lower unit cost | Choose AO3401 where cost sensitivity outweighs efficiency targets and thermal headroom permits higher RDS(on). |
Compared with DMG2305U-7 and AO3401, the SI2343DS-T1-GE3 offers balanced RDS(on), gate charge, and thermal performance in a halogen-free package-making it optimal for industrial-grade load switching where regulatory compliance and reliability coexist with moderate efficiency demands.
Availability
SI2343DS-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and industrial sensor node power gating requiring stable component supply, halogen-free compliance, and SOT-23 footprint consistency.
Supply support for SI2343DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si2343DS product line delivers compact, high-performance P-channel MOSFETs optimized for load switching and power management in space-constrained, thermally demanding applications.
FAQ
What is the maximum continuous drain current for SI2343DS-T1-GE3 at 70 °C ambient temperature?
The SI2343DS-T1-GE3 supports -2.5 A continuous drain current at TA = 70 °C under standard FR4 mounting conditions. This derating reflects thermal limits imposed by its 120 °C/W junction-to-ambient resistance and 150 °C maximum junction temperature. Designers must verify PCB copper area and airflow to sustain this current in real-world assemblies. The SI2343DS-T1-GE3 datasheet specifies both steady-state and pulse ratings to guide thermal design.
Does SI2343DS-T1-GE3 have a specified gate charge value, and how does it affect switching performance?
Yes, the SI2343DS-T1-GE3 has a total gate charge (Qg) of 14–21 nC at VDS = -15 V and VGS = -10 V. This directly determines the gate driver current required to achieve its 10–15 ns turn-on time. Lower Qg reduces driver power loss and EMI generation. The SI2343DS-T1-GE3's Qg enables efficient operation with standard logic-level gate drivers while maintaining fast edge rates critical for high-frequency load switching.
Is SI2343DS-T1-GE3 suitable for reverse-polarity protection, and what body diode characteristics support this?
Yes, the SI2343DS-T1-GE3 is commonly used for reverse-polarity protection due to its integrated source-drain body diode. Its forward voltage (VSD) is -0.7 to -1.2 V at -1.0 A, providing a low-loss freewheeling path during fault conditions. When placed in the high-side configuration with source tied to input, the body diode blocks reverse current while the channel conducts forward current. The SI2343DS-T1-GE3's -30 V VDS rating ensures robustness against automotive load-dump transients.
What is the gate-threshold voltage range for SI2343DS-T1-GE3, and why does it matter for logic-level drive?
The SI2343DS-T1-GE3 has a gate-threshold voltage (VGS(th)) range of -1 V to -3 V at ID = -250 µA. This ensures reliable turn-on with common negative logic signals (e.g., -3.3 V or -5 V microcontroller outputs), avoiding marginal conduction near the threshold. The defined minimum VGS(th) guarantees that the SI2343DS-T1-GE3 remains fully enhanced even with process variation or temperature drift, preventing unintended high-RDS(on) operation.
How does the halogen-free status of SI2343DS-T1-GE3 impact its manufacturing and environmental compliance?
The SI2343DS-T1-GE3 meets IEC 61249-2-21 for halogen-free printed wiring board materials, meaning brominated and chlorinated flame retardants are excluded from its molding compound. This satisfies stringent environmental requirements for consumer, medical, and industrial end equipment without degrading thermal or electrical performance. The SI2343DS-T1-GE3 retains full RoHS compliance and achieves identical RthJA, RDS(on), and lifetime reliability versus lead-free variants-ensuring no design trade-offs for sustainability.
SI2343DS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 53mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2343DS-T1-GE3 FAQ
1.How can I place an order for SI2343DS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2343DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2343DS-T1-GE3 reliable?
The price and inventory of SI2343DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2343DS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2343DS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2343DS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2343DS-T1-GE3?
SI2343DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2343DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2343DS-T1-GE3?
For technical support, including SI2343DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2343DS-T1-GE3 requirements.
6.How does Aetrix verify that SI2343DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2343DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2343DS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2343DS-T1-GE3?
All SI2343DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2343DS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2343DS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2343DS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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