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Vishay Siliconix SI2371EDS-T1-BE3
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- Part No.:
- SI2371EDS-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2371EDS-T1-BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SI2371EDS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SOT-23 package, rated for -30 V drain-source voltage, 4.8 A continuous drain current at TC = 25 °C, and 0.045 Ω RDS(on) at VGS = -10 V. It serves as a load switch or overvoltage protection (OVP) switch in portable power management circuits.
For engineers reviewing the SI2371EDS-T1-BE3 datasheet, SI2371EDS-T1-BE3 pinout, SI2371EDS-T1-BE3 application, or SI2371EDS-T1-BE3 equivalent, key selection criteria include gate threshold voltage (-0.6 to -1.5 V), ESD robustness (3000 V HBM), body diode forward voltage (-0.8 to -1.2 V), thermal resistance (RthJA = 100–130 °C/W), and low gate charge (10.6 nC at VGS = -4.5 V).
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance with fast switching performance: typical turn-on delay is 28 ns at VGEN = -4.5 V, and total gate charge is 10.6 nC (VDS = -15 V, VGS = -4.5 V). Its built-in ESD protection meets 3000 V HBM per JESD22-A114.
The MOSFET operates across -55 to +150 °C junction temperature range, with gate-source leakage ≤ ±1 µA at VGS = ±4.5 V and zero-gate-voltage drain current ≤ -1 µA at VDS = -30 V. Body diode reverse recovery time is 13–20 ns at dI/dt = 100 A/µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage in high-side switch configurations |
| RDS(on) max | 0.045 Ω at VGS = -10 V - Enables <150 mW conduction loss at 4 A load |
| ID continuous | -4.8 A at TC = 25 °C - Supports compact load-switch designs without heatsink |
| Qg typ | 10.6 nC at VGS = -4.5 V - Low drive power requirement for battery-powered gate drivers |
| VGS(th) | -0.6 to -1.5 V - Ensures reliable turn-on with 3.3 V logic-level control |
| VSD | -0.8 to -1.2 V - Limits body diode conduction loss during reverse current events |
| RthJA | 100–130 °C/W - Defines thermal derating for PCB layout on 1" × 1" FR4 |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3-pin configuration: 1.7 mm × 2.9 mm footprint, 1.12 mm max height, and gull-wing leads for reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level input; requires no external pull-down due to low IGSS (≤ ±1 µA) |
| 2 (S) | Source | Reference node for gate drive; connects to system ground or positive rail in high-side switch topology |
| 3 (D) | Drain | Power output terminal; ties to load; exposed drain pad improves thermal transfer to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers 0.045 Ω RDS(on) in SOT-23, enabling higher current density than planar MOSFETs |
| Built-in ESD protection | 3000 V HBM rating eliminates need for external TVS in portable USB/charging paths |
| 100 % Rg tested | Ensures consistent gate resistance (2.2–22 Ω) for predictable switching timing across production lots |
| Low VGS(th) spread | -0.6 to -1.5 V threshold enables stable operation with 3.3 V microcontroller GPIO without level-shifting |
| Optimized body diode | 13–20 ns trr and 6–12 nC Qrr reduce switching losses in synchronous rectifier or flyback snubber applications |
Applications
| Portable Load Switching | OVP Protection Circuit |
|---|---|
Use Scenario: Power gating of USB peripherals or display backlight in smartphones and tablets. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by baseband processor GPIO. Use Value: 0.045 Ω RDS(on) limits voltage drop to <200 mV at 4 A, preserving battery runtime and enabling compact PCB layout. | Use Scenario: Preventing damage from accidental 5 V-to-3.3 V misconnection in USB-C accessory ports. IC Role / Device Role / Timing Role: Fast-acting OVP switch that disconnects downstream circuitry within microseconds of overvoltage detection. Use Value: Low VGS(th) ensures immediate turn-off when comparator output drops below -1.5 V, protecting sensitive 3.3 V ICs. |
| DC-DC Converter Sync Rectifier | Hot-Swap Controller Interface |
Use Scenario: Secondary-side synchronous rectification in isolated buck-boost converters for wearables. IC Role / Device Role / Timing Role: Reverse-biased body diode conducts freewheeling current; gate driven by dedicated sync controller. Use Value: 13–20 ns trr minimizes reverse recovery loss, improving efficiency by >1.2% at 1 MHz switching frequency. | Use Scenario: Inrush current limiting during hot-plug insertion of PCIe add-in cards or M.2 SSD modules. IC Role / Device Role / Timing Role: Controlled ramp-up switch placed between backplane and module power rail. Use Value: Gate charge of 10.6 nC allows precise slew-rate control using standard RC networks, preventing bus voltage collapse. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFG-7 | RDS(on) = 0.035 Ω @ -10 V; SOT-23 package; lower VGS(th) (-0.5 to -1.2 V) | Better conduction loss at high current; tighter VGS(th) improves 2.5 V logic compatibility | Select when optimizing for <100 mW conduction loss at 5 A or interfacing with 2.5 V controllers |
| AO3401 | RDS(on) = 0.055 Ω @ -4.5 V; same SOT-23; higher Qg (14 nC) | Higher gate charge increases driver power demand; slightly higher RDS(on) raises thermal load | Select when prioritizing cost-sensitive BOMs where 10% RDS(on) increase is acceptable |
Compared with DMN3025LFG-7 and AO3401, SI2371EDS-T1-BE3 offers balanced trade-offs: lower RDS(on) than AO3401 for reduced heat generation, and more robust ESD rating (3000 V vs. 2000 V) than DMN3025LFG-7-critical for handheld ESD-prone environments.
Availability
SI2371EDS-T1-BE3 is available at Aetrix Electronics and suitable for portable load switching, overvoltage protection, and DC-DC converter synchronous rectification requiring stable component supply and lead-free compliance.
Supply support for SI2371EDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si2371EDS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for space-constrained portable power management where low gate drive voltage and high current density are essential.
FAQ
What is the maximum continuous drain current rating for SI2371EDS-T1-BE3 at ambient temperature?
The SI2371EDS-T1-BE3 supports -3.7 A continuous drain current at TA = 25 °C on a 1" × 1" FR4 board (derated to -2.9 A at TA = 70 °C). This rating assumes no forced airflow and standard JEDEC thermal test conditions, making it suitable for thermally constrained handheld devices where heatsinking is impractical.
Does SI2371EDS-T1-BE3 require an external gate resistor for ESD protection?
No, SI2371EDS-T1-BE3 includes built-in ESD protection rated at 3000 V HBM, eliminating the need for external gate resistors or TVS diodes in most portable applications. The device has been 100 % Rg tested to ensure gate resistance remains within 2.2–22 Ω, supporting stable transient response without added components.
Can SI2371EDS-T1-BE3 be used with 3.3 V microcontroller GPIOs?
Yes, SI2371EDS-T1-BE3 is fully compatible with 3.3 V logic: its gate threshold voltage ranges from -0.6 to -1.5 V, ensuring full enhancement at VGS = -3.3 V. At this drive level, RDS(on) is 0.053 Ω (max), delivering <220 mW conduction loss at 4 A-well within thermal limits for SOT-23.
What is the body diode forward voltage of SI2371EDS-T1-BE3 under typical operating conditions?
The body diode forward voltage (VSD) of SI2371EDS-T1-BE3 is -0.8 to -1.2 V at IS = -2.9 A and VGS = 0 V. This low forward drop reduces power dissipation during freewheeling or reverse-current events, supporting efficient operation in DC-DC converter secondary-side rectification and hot-swap inrush limiting.
Is SI2371EDS-T1-BE3 RoHS-compliant and halogen-free?
Yes, SI2371EDS-T1-BE3 is lead (Pb)-free and halogen-free per Vishay's material categorization standard (document #99912). The "-BE3" suffix confirms compliance with JEDEC JS-709B and IPC-1752A requirements, making it suitable for consumer electronics and medical devices targeting global environmental regulations.
SI2371EDS-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta), 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta), 1.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2371EDS-T1-BE3 FAQ
1.How can I place an order for SI2371EDS-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2371EDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2371EDS-T1-BE3 reliable?
The price and inventory of SI2371EDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2371EDS-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI2371EDS-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2371EDS-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2371EDS-T1-BE3?
SI2371EDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2371EDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2371EDS-T1-BE3?
For technical support, including SI2371EDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2371EDS-T1-BE3 requirements.
6.How does Aetrix verify that SI2371EDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI2371EDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2371EDS-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI2371EDS-T1-BE3?
All SI2371EDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2371EDS-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2371EDS-T1-BE3 part is unused and in its original packaging.
Return procedure for SI2371EDS-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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