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Vishay Siliconix SI2372DS-T1-GE3
- Part No.:
- SI2372DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2372DS-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 4A/5.3A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,797
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Product details
Overview
SI2372DS-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® power MOSFET in SOT-23 package, rated for 5.3 A continuous drain current at TC = 25 °C, with RDS(on) of 0.033 Ω at VGS = 10 V and 2.9 nC total gate charge - optimized for DC/DC converter high-side switching and compact load-switch applications.
For engineers reviewing the SI2372DS-T1-GE3 datasheet, SI2372DS-T1-GE3 pinout, SI2372DS-T1-GE3 application, or SI2372DS-T1-GE3 equivalent, this discrete MOSFET delivers verified low on-resistance, fast 4 ns turn-on delay, and 100% Rg tested gate integrity - critical for space-constrained power management designs requiring stable thermal performance up to 150 °C junction temperature.
Technical Context
This device employs trench-gate silicon technology to achieve low RDS(on) while maintaining robust gate oxide reliability under ±20 V VGS stress. Its 288 pF input capacitance and 26 pF reverse transfer capacitance support efficient 1 MHz switching in synchronous buck topologies.
The integrated body diode exhibits 12 ns reverse recovery time and 4 nC Qrr at IF = 3.2 A, enabling reliable freewheeling in non-synchronous converters. Thermal design is anchored by RthJF = 60 °C/W (steady state) and RthJA = 100 °C/W (t ≤ 5 s), validated on 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 30 V - supports 24 V rail systems with 25 % safety margin against transients |
| RDS(on) @ VGS = 10 V | 0.033 Ω - enables <170 mW conduction loss at 4.5 A, reducing thermal load in SOT-23 footprint |
| ID (Cont) @ TC = 25 °C | 5.3 A - maximum steady-state current achievable with adequate heatsinking via drain pad |
| Qg (Total) | 2.9 nC @ VGS = 4.5 V - ensures fast, low-drive-strength switching with 3.3 V logic-level gate control |
| VGS(th) | 1.0–2.5 V - guarantees turn-on compatibility with standard microcontroller GPIOs without level shifting |
| trr / Qrr | 12 ns / 4 nC - minimizes switching losses and voltage spikes during body diode commutation |
| RthJF | 60 °C/W - defines thermal path efficiency from junction to PCB copper through drain terminal |
Pinout & Package
SOT-23 (TO-236) package with exposed drain pad for thermal conduction; 3-pin surface-mount outline measuring 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm height; lead (Pb)-free and halogen-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires <1.8 Ω gate resistance to limit ringing per Rg spec |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to system ground in low-side switch |
| 3 (D) | Drain | High-current output terminal and primary thermal interface to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) density for SOT-23, enabling higher current in same footprint vs. planar MOSFETs |
| 100 % Rg tested | Guarantees gate resistance between 0.2–1.8 Ω, ensuring consistent switching speed and EMI behavior across production lots |
| Low Qgd / Qgs ratio | 0.9 nC / 1.1 nC = 0.82 - reduces Miller effect, improving hard-switching robustness in DC/DC controllers |
| Body diode softness (trr = 12 ns) | Minimizes voltage overshoot during inductive turn-off, easing snubber design in buck converters |
| JEDEC-compliant SOT-23 footprint | Enables drop-in replacement of legacy 30 V N-MOSFETs without PCB redesign |
Applications
| DC/DC Converter High-Side Switch | Load Switch for USB Power Delivery |
|---|---|
Use Scenario: Synchronous buck regulator operating at 500 kHz switching frequency with 12 V input and 3.3 V/3 A output. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; driven by PWM controller with 4.5 V gate voltage. Use Value: 0.038 Ω RDS(on) at VGS = 6 V limits conduction loss to <520 mW, while 2.9 nC Qg enables clean 10 ns rise time without gate driver amplification. |
Use Scenario: Hot-swap protection for USB-C port delivering up to 3 A at 5 V, with inrush current limiting and fault shutdown. IC Role / Device Role / Timing Role: Low-impedance series pass element controlled by dedicated load switch IC or microcontroller GPIO. Use Value: 1.0–2.5 V VGS(th) ensures full enhancement with 3.3 V logic; 0.8–1.2 V VSD body diode prevents backfeed during disconnect events. |
| Power Management in Wearables | LED Driver Current Sink |
Use Scenario: Battery-powered smartwatch with multiple subsystems (display, sensor hub, BLE radio) requiring independent power gating. IC Role / Device Role / Timing Role: Low-quiescent-load enable switch isolating downstream LDOs or DC/DCs during sleep mode. Use Value: IDSS < 1 μA at 30 V ensures <100 nA leakage per rail, preserving battery life over multi-week standby periods. |
Use Scenario: Constant-current LED backlight driver for OLED display, where MOSFET acts as adjustable current sink with PWM dimming. IC Role / Device Role / Timing Role: Precision current-regulating element in source-follower configuration with op-amp feedback. Use Value: gfs = 18 S provides high transconductance for tight current regulation; 0.043 Ω RDS(on) at VGS = 4.5 V supports 4.6 A pulsed current capability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 0.025 Ω @ 10 V, but SOT-26 package with 6 pins and dual-channel topology | Requires PCB redesign; suited for dual-switch or level-shifted gate drive architectures | Select only when dual-N or integrated bootstrap capability is required |
| AO3400 | RDS(on) = 0.026 Ω @ 10 V, slightly lower Qg (2.4 nC), but VGS(th) range wider (0.8–2.0 V) and no 100 % Rg test | Higher risk of partial turn-on near threshold; less predictable timing in marginal drive conditions | Prefer for cost-sensitive, non-critical load switches where gate drive margin is ample |
Compared with DMN3025LSD-13 and AO3400, SI2372DS-T1-GE3 offers tighter gate resistance control, guaranteed 100 % Rg screening, and JEDEC-standard SOT-23 pinout - making it optimal for single-channel, space-constrained, and thermally sensitive power management layouts.
Availability
SI2372DS-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converter high-side switching, USB load switching, and wearable power gating requiring stable component supply and full RoHS compliance.
Supply support for SI2372DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SI2372DS-T1-GE3 belongs to Vishay's LITTLE FOOT® SOT-23 power MOSFET family, engineered specifically to deliver enhanced thermal performance and low RDS(on) in standard small-outline packages for compact power management systems.
FAQ
What is the maximum continuous drain current rating for SI2372DS-T1-GE3 at 70 °C case temperature?
The SI2372DS-T1-GE3 supports 4.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions.
Does SI2372DS-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SI2372DS-T1-GE3 is fully compatible with 3.3 V logic-level gate drive: its VGS(th) range is 1.0–2.5 V, and RDS(on) is specified down to 0.043 Ω at VGS = 4.5 V with ID = 2 A - ensuring strong enhancement and low conduction loss even at reduced gate voltage.
What is the thermal resistance from junction to foot (RthJF) for SI2372DS-T1-GE3, and why does it matter?
SI2372DS-T1-GE3 has a typical RthJF of 60 °C/W (steady state), representing the dominant thermal path from die to PCB copper via the drain terminal. This value is critical for estimating junction temperature rise in real-world layouts and must be used - not RthJA - when a thermal pad is implemented under the drain.
Is SI2372DS-T1-GE3 suitable for reverse polarity protection circuits?
Yes, SI2372DS-T1-GE3 can be used in reverse polarity protection by configuring it as a low-side switch with source tied to input and drain to load. Its 30 V VDS rating and 0.8–1.2 V body diode forward voltage (VSD) ensure minimal dropout and reliable blocking of reverse input voltage up to 28 V.
What does "100 % Rg tested" mean for SI2372DS-T1-GE3, and how does it benefit circuit design?
"100 % Rg tested" means every SI2372DS-T1-GE3 unit undergoes production screening for gate resistance (0.2–1.8 Ω), ensuring consistent gate charging dynamics. This eliminates variability in switching speed and reduces risk of gate oscillation or shoot-through in tightly timed power stages - directly enhancing reliability in high-frequency DC/DC converters.
SI2372DS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta), 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 33mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 288 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 960mW (Ta), 1.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2372DS-T1-GE3 FAQ
1.How can I place an order for SI2372DS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2372DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2372DS-T1-GE3 reliable?
The price and inventory of SI2372DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2372DS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2372DS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2372DS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2372DS-T1-GE3?
SI2372DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2372DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2372DS-T1-GE3?
For technical support, including SI2372DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2372DS-T1-GE3 requirements.
6.How does Aetrix verify that SI2372DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2372DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2372DS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2372DS-T1-GE3?
All SI2372DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2372DS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2372DS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2372DS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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