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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2377EDS-T1-BE3

Name: SI2377EDS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2377EDS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2377EDS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2377EDS-T1-BE3.pdf

Description:: P-CHANNEL 20-V (D-S) MOSFET

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Product details

Overview

SI2377EDS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SOT-23 package, rated for -20 V drain-source voltage, 0.061 Ω R_DS(on) at V_GS = -4.5 V, -4.4 A continuous drain current (T_C = 25 °C), and featuring built-in Zener ESD protection. It serves as a compact load switch in portable battery-powered systems requiring low gate-threshold control and high reliability in space-constrained layouts.

For engineers reviewing the SI2377EDS-T1-BE3 datasheet, SI2377EDS-T1-BE3 pinout, SI2377EDS-T1-BE3 application, or SI2377EDS-T1-BE3 equivalent, key selection criteria include verified -1.5 V to -1.0 V gate threshold range, 7.6 nC total gate charge at -4.5 V drive, thermal resistance of 80–100 °C/W (junction-to-ambient), body diode forward voltage of -0.8 to -1.2 V at -3 A, and compatibility with 1.5 V–4.5 V logic-level gate drive in single-supply portable power rails.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance with minimal gate charge, enabling efficient switching in low-voltage DC/DC and battery-protection circuits. Its negative V_GS(th) (-0.4 V to -1.0 V) ensures turn-on with standard 1.8 V or 2.5 V I/O, while its -20 V V_DS rating supports operation across Li-ion (up to 4.2 V) and dual-cell alkaline (up to 3.2 V) supply rails.

The integrated source-drain body diode has t_rr = 30–60 ns and Q_rr = 20–40 nC, supporting synchronous rectification and reverse-current blocking in buck converters and USB OTG power paths. Thermal design is constrained by R_thJA = 80–100 °C/W on FR4, limiting continuous power dissipation to 1.25 W at T_A = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage compatible with ≤4.2 V battery systems and 5 V rail isolation
R_DS(on) @ V_GS = -4.5 V	0.061 Ω - Enables ≤200 mW conduction loss at 4.4 A, critical for thermally limited handheld PCBs
I_D (continuous, T_C = 25 °C)	-4.4 A - Supports load-switching up to ~20 W at 4.5 V input without external heatsink
Q_g (typ.)	7.6 nC - Low gate charge allows fast switching with <1 μs rise/fall times using 1 Ω driver, reducing dynamic losses
V_GS(th)	-0.4 to -1.0 V - Ensures reliable turn-on with 1.8 V GPIO or low-dropout regulator outputs
V_SD (body diode)	-0.8 to -1.2 V @ -3 A - Limits reverse conduction loss in bidirectional power paths and back-powering scenarios
R_thJA	80–100 °C/W - Defines thermal derating curve: max 1.25 W at 25 °C ambient on standard 1"×1" FR4 board

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 terminals: 1.2 mm × 2.9 mm footprint, 1.1 mm height, and gull-wing leads compliant with IPC-7351B density level A. Designed for reflow soldering per JEDEC J-STD-020 (peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting negative V_GS; requires no level-shifting for 1.5–3.3 V logic drive due to low \|V_GS(th)\|
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground or battery negative in high-side switch configurations
3 (D)	Drain	Switched output node; connects to load; electrically isolated from package foot (R_thJF = 55–70 °C/W)

Key Features

Feature	Design Value
TrenchFET® construction	Delivers 0.061 Ω R_DS(on) in SOT-23, enabling higher current density than planar P-channel alternatives
100% R_g tested	Guarantees gate resistance between 0.4 kΩ and 4 kΩ, ensuring predictable switching speed and EMI behavior
Built-in Zener ESD protection	Provides 2000 V HBM robustness without external TVS, reducing BOM count in portable ESD-prone environments
Low V_GS(th) variation	ΔV_GS(th)/T_J = 2.5 mV/°C enables stable turn-on across -55 to +150 °C junction range
Optimized body diode	t_rr = 30–60 ns and Q_rr = 20–40 nC support efficient freewheeling in DC/DC converters without snubbers

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Isolating main battery from USB-C VBUS during charging to prevent backfeed and enable dual-role power negotiation. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path; operates in linear mode during soft-start and saturated switch mode during steady state. Use Value: Low 0.061 Ω R_DS(on) minimizes voltage drop (<275 mV at 4.5 A), preserving VBUS regulation margin; -1.0 V V_GS(th) allows direct control from USB PD controller's 1.8 V GPIO.	Use Scenario: Blocking reverse current from host to peripheral when VBUS is absent but peripheral remains powered. IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed between VBUS and downstream 5 V rail; leverages intrinsic body diode orientation for automatic blocking. Use Value: Body diode V_SD = -0.8 to -1.2 V ensures <1.2 V forward drop during fault conditions; -20 V V_DS withstands transient surges up to ±15 V per USB-IF spec.
Wireless Earbud Battery Switch	IoT Sensor Node Power Gating
Use Scenario: Enabling/disabling charging circuitry during sleep to reduce quiescent current below 1 µA. IC Role / Device Role / Timing Role: Low-leakage P-channel switch isolating charger IC from battery; gate driven by microcontroller GPIO. Use Value: IGSS ≤ ±0.5 µA at V_GS = ±4.5 V ensures <100 nA control-line leakage; -55 to +150 °C operating range supports earbud thermal cycling.	Use Scenario: Powering down BLE transceiver and environmental sensors between measurement intervals to extend coin-cell life. IC Role / Device Role / Timing Role: Load switch disconnecting 3.3 V LDO output from sensor subsystem; controlled via ultra-low-power MCU wake signal. Use Value: 7.6 nC Q_g enables full turn-on in <100 ns with 10 kΩ pull-up, minimizing active-time overhead; SOT-23 footprint saves >1.5 mm² vs. SO-8 alternatives.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Isolating main battery from USB-C VBUS during charging to prevent backfeed and enable dual-role power negotiation.

IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path; operates in linear mode during soft-start and saturated switch mode during steady state.

Use Value: Low 0.061 Ω R_DS(on) minimizes voltage drop (<275 mV at 4.5 A), preserving VBUS regulation margin; -1.0 V V_GS(th) allows direct control from USB PD controller's 1.8 V GPIO.

Use Scenario: Blocking reverse current from host to peripheral when VBUS is absent but peripheral remains powered.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed between VBUS and downstream 5 V rail; leverages intrinsic body diode orientation for automatic blocking.

Use Value: Body diode V_SD = -0.8 to -1.2 V ensures <1.2 V forward drop during fault conditions; -20 V V_DS withstands transient surges up to ±15 V per USB-IF spec.

Wireless Earbud Battery Switch

IoT Sensor Node Power Gating

Use Scenario: Enabling/disabling charging circuitry during sleep to reduce quiescent current below 1 µA.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch isolating charger IC from battery; gate driven by microcontroller GPIO.

Use Value: IGSS ≤ ±0.5 µA at V_GS = ±4.5 V ensures <100 nA control-line leakage; -55 to +150 °C operating range supports earbud thermal cycling.

Use Scenario: Powering down BLE transceiver and environmental sensors between measurement intervals to extend coin-cell life.

IC Role / Device Role / Timing Role: Load switch disconnecting 3.3 V LDO output from sensor subsystem; controlled via ultra-low-power MCU wake signal.

Use Value: 7.6 nC Q_g enables full turn-on in <100 ns with 10 kΩ pull-up, minimizing active-time overhead; SOT-23 footprint saves >1.5 mm² vs. SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 0.055 Ω @ -4.5 V; slightly lower gate charge (6.8 nC); same SOT-23 package	Marginally better conduction efficiency at high current; identical thermal profile and pinout	Preferred where <50 mW conduction loss reduction justifies sourcing from Diodes Inc.
AO3401	R_DS(on) = 0.085 Ω @ -4.5 V; higher V_GS(th) (-0.7 to -1.3 V); same SOT-23 footprint	Less sensitive to weak gate drive; higher on-resistance increases thermal load above 2.5 A	Select when gate drive strength is marginal or cost sensitivity outweighs 30% R_DS(on) penalty.

Compared with DMN2020LFG-7 and AO3401, SI2377EDS-T1-BE3 offers balanced performance: lower R_DS(on) than AO3401 for improved efficiency, and tighter V_GS(th) distribution than DMN2020LFG-7 for more predictable low-voltage turn-on-making it optimal for 1.8 V–2.5 V controlled battery switches.

Availability

SI2377EDS-T1-BE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, wireless earbud battery switching, and IoT sensor node power gating requiring stable component supply and long-term industrial availability.

Supply support for SI2377EDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SI2377EDS-T1-BE3 belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered specifically for compact, low-voltage load switching in portable and battery-operated electronics where gate drive voltage headroom is limited.

FAQ

What is the maximum continuous drain current for SI2377EDS-T1-BE3 at 70 °C case temperature?

The maximum continuous drain current for SI2377EDS-T1-BE3 is -3.5 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-23 package under sustained power dissipation; designers must verify PCB copper area and airflow to maintain case temperature within this bound during operation of SI2377EDS-T1-BE3.

Does SI2377EDS-T1-BE3 require a gate resistor for typical 1.8 V GPIO switching?

No, SI2377EDS-T1-BE3 does not require an external gate resistor when driven by a 1.8 V GPIO, because its V_GS(th) range (-0.4 V to -1.0 V) ensures full enhancement with negative gate bias relative to source. However, a small series resistor (≤100 Ω) may be added to damp ringing in high-frequency switching applications involving SI2377EDS-T1-BE3, especially when routing exceeds 2 cm.

What is the body diode forward voltage specification for SI2377EDS-T1-BE3?

The body diode forward voltage (V_SD) for SI2377EDS-T1-BE3 is -0.8 V to -1.2 V at I_S = -3 A and V_GS = 0 V, per the Drain-Source Body Diode Characteristics table. This parameter defines conduction loss during reverse-current events such as inductive flyback or USB-C dead-battery backfeed, directly impacting thermal design of SI2377EDS-T1-BE3 in bidirectional power paths.

Is SI2377EDS-T1-BE3 suitable for use in automotive infotainment power sequencing?

SI2377EDS-T1-BE3 is not AEC-Q101 qualified and is not recommended for automotive infotainment power sequencing. Its operating junction temperature range (-55 to +150 °C) meets extended industrial requirements, but it lacks automotive-grade qualification, stress testing, and PPAP documentation required for vehicle deployment. For such applications, consider AEC-Q101 P-channel alternatives instead of SI2377EDS-T1-BE3.

How does the 100% R_g test impact SI2377EDS-T1-BE3 switching performance?

The 100% R_g test guarantees each SI2377EDS-T1-BE3 unit has gate resistance between 0.4 kΩ and 4 kΩ, ensuring consistent gate charging time and predictable switching waveforms across production lots. This eliminates outliers that could cause excessive overshoot, slow turn-on, or shoot-through risk in tightly timed power sequences involving SI2377EDS-T1-BE3, improving system-level timing margin and EMI repeatability.

SI2377EDS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta), 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 61mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta), 1.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2377EDS-T1-BE3 FAQ

1.How can I place an order for SI2377EDS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2377EDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2377EDS-T1-BE3 reliable?

The price and inventory of SI2377EDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2377EDS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2377EDS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2377EDS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2377EDS-T1-BE3?

SI2377EDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2377EDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2377EDS-T1-BE3?

For technical support, including SI2377EDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2377EDS-T1-BE3 requirements.

6.How does Aetrix verify that SI2377EDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2377EDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2377EDS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2377EDS-T1-BE3?

All SI2377EDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2377EDS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2377EDS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2377EDS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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