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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2392BDS-T1-GE3

Name: SI2392BDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2392BDS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2392BDS-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2392BDS-T1-GE3.pdf

Description:: N-CHANNEL 100-V (D-S) MOSFET SOT

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Product details

Overview

SI2392BDS-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 2.3 A TrenchFET® Gen IV power MOSFET in SOT-23 package, with R_DS(on) = 0.149 Ω at V_GS = 10 V and 0.180 Ω at V_GS = 4.5 V, optimized for low-voltage load switching in space-constrained DC/DC converters and LED backlighting circuits.

For engineers reviewing the SI2392BDS-T1-GE3 datasheet, SI2392BDS-T1-GE3 pinout, SI2392BDS-T1-GE3 application, or SI2392BDS-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJA = 100 °C/W max), gate charge (Q_g = 2.2 nC typ. at 4.5 V), body diode recovery (t_rr = 21 ns), and SOT-23 terminal mapping - all critical for compact power stage design and thermal validation.

Technical Context

This discrete MOSFET employs trench-based silicon architecture to achieve enhanced conduction efficiency and fast switching performance. Its 100 % R_g and UIS tested construction ensures robustness against gate resistance variation and unclamped inductive switching stress.

The device operates across -55 °C to +150 °C junction temperature range with V_GS(th) = 1.2–3.0 V and exhibits low C_iss = 290 pF and C_rss = 5 pF, supporting stable operation in high-frequency boost converter topologies where Miller effect control is essential.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC in isolated/non-isolated converters without derating
R_DS(on) @ 10 V	0.149 Ω - enables ≤0.7 W conduction loss at 2.3 A continuous drain current
R_DS(on) @ 4.5 V	0.180 Ω - ensures reliable turn-on from standard 3.3 V or 5 V logic-level gate drivers
Q_g typ.	2.2 nC - reduces gate drive power and switching transition time in 500 kHz–1 MHz applications
t_rr	21 ns - minimizes reverse recovery losses during synchronous rectification or freewheeling
R_thJA max.	100 °C/W - defines worst-case thermal rise on standard FR4 PCBs without heatsinking
I_D (T_A = 25 °C)	2.0 A - maximum ambient-rated current for surface-mount operation on 1" × 1" board

Pinout & Package

SOT-23 (TO-236) package: small-outline transistor with gull-wing leads, 1.3 mm × 2.9 mm footprint, 1.1 mm height, suitable for automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts 0–20 V gate-source voltage; requires <2.2 nC charge for full enhancement
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch configuration
3 (D)	Drain	High-side output terminal; connects to load or inductor; electrically isolated from package foot (R_thJF = 75 °C/W max)

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers lower R_DS(on) per die area vs. planar MOSFETs, enabling higher current density in SOT-23
100 % R_g tested	Guarantees gate resistance between 0.3–3.0 Ω, ensuring predictable turn-on timing and EMI behavior
100 % UIS tested	Validates ruggedness under unclamped inductive switching events up to I_AS = 4 A and E_AS = 0.8 mJ
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements

Applications

DC/DC Boost Converter	Load Switch
Use Scenario: Step-up voltage conversion from 3.3 V or 5 V battery rail to 12–24 V for display bias or sensor excitation. IC Role / Device Role / Timing Role: High-side N-channel switch in asynchronous boost topology; driven by PWM controller with external bootstrap or charge pump. Use Value: Low Q_g (2.2 nC) and R_DS(on) (0.180 Ω @ 4.5 V) reduce switching and conduction losses, improving efficiency >90 % at 1 A output.	Use Scenario: Controlled power enable for peripheral modules (e.g., USB port, camera sensor, audio codec) in mobile computing platforms. IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode; controlled by baseband processor GPIO. Use Value: V_GS(th) range (1.2–3.0 V) ensures clean turn-on from 1.8 V or 3.3 V logic; t_rr = 21 ns prevents shoot-through during rapid on/off cycling.
LED Backlighting	Power Management
Use Scenario: Constant-current dimming driver for edge-lit LCD TV backlight strings operating at 30–60 V. IC Role / Device Role / Timing Role: PWM-controlled current sink switch in buck-boost or SEPIC LED driver stages. Use Value: R_DS(on) stability over temperature (±15 % from -40 to +125 °C) maintains consistent LED brightness across thermal zones.	Use Scenario: Dynamic voltage scaling and rail sequencing in notebook motherboard VRMs and PMIC subsystems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or auxiliary power switch in multi-rail power delivery networks. Use Value: C_iss/C_rss ratio of 58:1 suppresses Miller-induced false turn-on, supporting reliable 1 MHz+ switching with minimal gate drive overhead.

DC/DC Boost Converter

Load Switch

Use Scenario: Step-up voltage conversion from 3.3 V or 5 V battery rail to 12–24 V for display bias or sensor excitation.

IC Role / Device Role / Timing Role: High-side N-channel switch in asynchronous boost topology; driven by PWM controller with external bootstrap or charge pump.

Use Value: Low Q_g (2.2 nC) and R_DS(on) (0.180 Ω @ 4.5 V) reduce switching and conduction losses, improving efficiency >90 % at 1 A output.

Use Scenario: Controlled power enable for peripheral modules (e.g., USB port, camera sensor, audio codec) in mobile computing platforms.

IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode; controlled by baseband processor GPIO.

Use Value: V_GS(th) range (1.2–3.0 V) ensures clean turn-on from 1.8 V or 3.3 V logic; t_rr = 21 ns prevents shoot-through during rapid on/off cycling.

LED Backlighting

Power Management

Use Scenario: Constant-current dimming driver for edge-lit LCD TV backlight strings operating at 30–60 V.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch in buck-boost or SEPIC LED driver stages.

Use Value: R_DS(on) stability over temperature (±15 % from -40 to +125 °C) maintains consistent LED brightness across thermal zones.

Use Scenario: Dynamic voltage scaling and rail sequencing in notebook motherboard VRMs and PMIC subsystems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or auxiliary power switch in multi-rail power delivery networks.

Use Value: C_iss/C_rss ratio of 58:1 suppresses Miller-induced false turn-on, supporting reliable 1 MHz+ switching with minimal gate drive overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 0.155 Ω @ 4.5 V; higher Q_g = 3.5 nC; same SOT-23 package	Marginally higher switching loss in >500 kHz designs due to increased gate charge	Prefer SI2392BDS-T1-GE3 when minimizing gate drive power or optimizing for 1 MHz boost converters
AO3400	R_DS(on) = 0.042 Ω @ 10 V but only 0.055 Ω @ 4.5 V; higher C_iss = 640 pF; same SOT-23	Better conduction loss at high V_GS, but poorer high-frequency stability due to elevated capacitance	Choose SI2392BDS-T1-GE3 for balanced 4.5 V drive performance and lower Miller feedback risk

Compared with DMN2016LFG-7 and AO3400, SI2392BDS-T1-GE3 offers superior R_DS(on) consistency across 4.5 V–10 V gate drive, lower C_rss, and validated UIS ruggedness - making it optimal for thermally constrained, medium-frequency load switching where reliability and gate drive simplicity are prioritized.

Availability

SI2392BDS-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, load switching, LED backlighting, and power management applications requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for SI2392BDS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.

The SI2392BDS-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for compact, high-efficiency power switching in portable and space-limited systems where thermal performance and gate drive compatibility are critical.

FAQ

What is the maximum continuous drain current for SI2392BDS-T1-GE3 at 70 °C ambient temperature?

The SI2392BDS-T1-GE3 supports 1.6 A continuous drain current at T_A = 70 °C on a standard 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes no additional heatsinking.

Does SI2392BDS-T1-GE3 have a built-in body diode, and what are its key characteristics?

Yes, SI2392BDS-T1-GE3 integrates a parasitic body diode with V_SD = 0.8–1.2 V at I_S = 1.6 A and reverse recovery time t_rr = 21–32 ns. These parameters are measured at T_J = 25 °C with di/dt = 100 A/μs, enabling use in freewheeling and synchronous rectification roles without external diode addition.

Is SI2392BDS-T1-GE3 suitable for 3.3 V logic-level gate drive?

Yes, SI2392BDS-T1-GE3 is fully compatible with 3.3 V logic-level drive: its V_GS(th) range is 1.2–3.0 V, and R_DS(on) is specified at 0.180 Ω max with V_GS = 4.5 V - well within margin for robust enhancement from 3.3 V sources with typical gate driver output impedance.

What is the thermal resistance from junction to ambient (R_thJA) for SI2392BDS-T1-GE3 under standard mounting conditions?

The maximum R_thJA for SI2392BDS-T1-GE3 is 100 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, per the Thermal Resistance Ratings table. The typical value is 75 °C/W, and this metric directly determines allowable power dissipation before exceeding T_J(max) = 150 °C.

How is the marking code "H1" on SI2392BDS-T1-GE3 interpreted?

The marking code "H1" on SI2392BDS-T1-GE3 corresponds to the device variant and date code per Vishay's internal SOT-23 marking standard; it identifies the SI2392BDS-T1-GE3 as the lead (Pb)-free, halogen-free version manufactured in compliance with RoHS Directive 2011/65/EU and shipped in tape-and-reel format per EIA-481.

SI2392BDS-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta), 2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 290 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta), 1.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2392BDS-T1-GE3 FAQ

1.How can I place an order for SI2392BDS-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2392BDS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2392BDS-T1-GE3 reliable?

The price and inventory of SI2392BDS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2392BDS-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI2392BDS-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2392BDS-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2392BDS-T1-GE3?

SI2392BDS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2392BDS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2392BDS-T1-GE3?

For technical support, including SI2392BDS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2392BDS-T1-GE3 requirements.

6.How does Aetrix verify that SI2392BDS-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI2392BDS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2392BDS-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI2392BDS-T1-GE3?

All SI2392BDS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2392BDS-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2392BDS-T1-GE3 part is unused and in its original packaging.

Return procedure for SI2392BDS-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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