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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2392DS-T1-GE3

Name: SI2392DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2392DS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2392DS-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2392DS-T1-GE3.pdf

Description:: MOSFET N-CH 100V 3.1A SOT-23

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Product details

Overview

SI2392DS-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in SOT-23 package, rated for 3.1 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.126 Ω at V_GS = 10 V and 2 A, and optimized for DC/DC boost converters and load switching in space-constrained mobile power management systems.

For engineers reviewing the SI2392DS-T1-GE3 datasheet, SI2392DS-T1-GE3 pinout, SI2392DS-T1-GE3 application, or SI2392DS-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low gate charge (2.9 nC at V_GS = 4.5 V), 100 % R_g and UIS tested reliability, and thermal performance on FR4 (R_thJA = 100 °C/W max).

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 2.9 nC (V_GS = 4.5 V) and t_f = 7–14 ns. Its body diode exhibits V_SD = −0.8 to −1.2 V at I_S = 1.8 A and t_rr = 23–35 ns, supporting synchronous rectification and flyback recovery in high-efficiency converters.

The device operates across −55 to +150 °C junction temperature, with absolute maximum V_GS = ±20 V and avalanche-rated I_AS = 3 A (L = 0.1 mH), enabling robust operation in transient-prone power rails and load-switching applications where overvoltage and inductive kickback are present.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal with ≥2× safety margin in industrial and telecom DC/DC stages
R_DS(on)	0.126 Ω @ V_GS = 10 V, I_D = 2 A - enables <126 mW conduction loss at 1 A, critical for thermally constrained mobile PCBs
I_D (continuous)	3.1 A @ T_C = 25 °C - defines maximum steady-state current when mounted on heatsinked copper; derates to 1.8 A at T_C = 70 °C
Q_g	2.9 nC @ V_GS = 4.5 V - allows efficient drive from 3.3 V or 5 V controllers without gate driver ICs in low-power SMPS
t_f	7–14 ns - minimizes switching losses during turn-off, especially beneficial in >500 kHz boost and buck-boost topologies
R_thJA	100 °C/W max - sets thermal limit for 1.25 W dissipation at T_A = 25 °C on standard 1" × 1" FR4, guiding copper pour design
V_GS(th)	1.2–3.0 V - ensures reliable enhancement-mode turn-on with logic-level gate drivers (e.g., microcontroller GPIO)

Pinout & Package

Package: TO-236 (SOT-23), surface-mount, lead (Pb)-free and halogen-free, with drain-connected tab for thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤±20 V drive; low C_iss = 196 pF eases high-frequency switching
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch configurations
3 (D)	Drain	High-side connection point; electrically and thermally connected to PCB copper pour for heat dissipation and current routing

Key Features

Feature	Design Value
TrenchFET® construction	Delivers industry-leading R_DS(on) × area efficiency in SOT-23, reducing board space vs. comparable SO-8 MOSFETs by >70 %
100 % R_g and UIS tested	Guarantees gate resistance consistency and unclamped inductive switching ruggedness-critical for automotive and industrial load dumps
Low Q_gd/Q_g ratio	Q_gd = 1.4 nC / Q_g = 2.9 nC → ~48 % - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments
Body diode t_rr = 23–35 ns	Enables use in synchronous rectifier or freewheeling paths without external Schottky, lowering BOM count in compact LED backlight drivers
−55 to +150 °C T_J range	Supports operation in sealed enclosures or under-hood automotive modules without derating penalties below 125 °C ambient

Applications

DC/DC Boost Converters	Load Switch
Use Scenario: Step-up voltage conversion from 3.3 V or 5 V battery rail to 12 V for display bias or sensor excitation in portable medical devices. IC Role / Device Role / Timing Role: High-side N-channel switch in boost topology; driven by PWM controller with 4.5 V gate output. Use Value: Low Q_g (2.9 nC) and fast t_f (7–14 ns) minimize switching loss at 1 MHz, improving efficiency by ≥3 % vs. legacy SOT-23 MOSFETs.	Use Scenario: Controlled power sequencing for USB-C peripheral ports in ultrabooks, enabling hot-plug detection and overcurrent shutdown. IC Role / Device Role / Timing Role: Low-side load switch isolating VBUS from downstream circuitry; controlled by PMIC enable signal. Use Value: R_DS(on) = 0.126 Ω limits I²R drop to <130 mV at 1 A, preserving voltage margin while allowing direct GPIO drive without level shifters.
LED Backlighting in LCD TVs	Power Management for Mobile Computing
Use Scenario: Constant-current dimming control for edge-lit LED strings in 32"–55" LCD TV backlights using PWM modulation at 1–20 kHz. IC Role / Device Role / Timing Role: PWM-controlled switch in series with LED string; synchronously modulated with backlight driver IC. Use Value: Fast t_r/t_f (10–20 ns / 7–14 ns) ensures clean PWM edges, eliminating visible flicker and EMI spikes above 30 MHz.	Use Scenario: Core voltage regulation for SoC subsystems (e.g., GPU or DDR memory) in tablets, requiring rapid transient response and low quiescent current. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage; commutated with high-side FET via complementary gate signals. Use Value: Body diode V_SD = −0.8 to −1.2 V and t_rr = 23–35 ns reduce reverse recovery loss, increasing light-load efficiency by 2–4 % over discrete Schottky solutions.

DC/DC Boost Converters

Load Switch

Use Scenario: Step-up voltage conversion from 3.3 V or 5 V battery rail to 12 V for display bias or sensor excitation in portable medical devices.

IC Role / Device Role / Timing Role: High-side N-channel switch in boost topology; driven by PWM controller with 4.5 V gate output.

Use Value: Low Q_g (2.9 nC) and fast t_f (7–14 ns) minimize switching loss at 1 MHz, improving efficiency by ≥3 % vs. legacy SOT-23 MOSFETs.

Use Scenario: Controlled power sequencing for USB-C peripheral ports in ultrabooks, enabling hot-plug detection and overcurrent shutdown.

IC Role / Device Role / Timing Role: Low-side load switch isolating VBUS from downstream circuitry; controlled by PMIC enable signal.

Use Value: R_DS(on) = 0.126 Ω limits I²R drop to <130 mV at 1 A, preserving voltage margin while allowing direct GPIO drive without level shifters.

LED Backlighting in LCD TVs

Power Management for Mobile Computing

Use Scenario: Constant-current dimming control for edge-lit LED strings in 32"–55" LCD TV backlights using PWM modulation at 1–20 kHz.

IC Role / Device Role / Timing Role: PWM-controlled switch in series with LED string; synchronously modulated with backlight driver IC.

Use Value: Fast t_r/t_f (10–20 ns / 7–14 ns) ensures clean PWM edges, eliminating visible flicker and EMI spikes above 30 MHz.

Use Scenario: Core voltage regulation for SoC subsystems (e.g., GPU or DDR memory) in tablets, requiring rapid transient response and low quiescent current.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage; commutated with high-side FET via complementary gate signals.

Use Value: Body diode V_SD = −0.8 to −1.2 V and t_rr = 23–35 ns reduce reverse recovery loss, increasing light-load efficiency by 2–4 % over discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	V_DS = 30 V, R_DS(on) = 0.032 Ω @ 10 V - lower voltage rating, lower on-resistance	Not suitable for 100 V bus or boost stages >24 V input; limited to 5–12 V load switches	Select only if system V_IN ≤ 15 V and R_DS(on) < 40 mΩ is mandatory; SI2392DS-T1-GE3 remains preferred for 100 V capability.
AO3400	V_DS = 30 V, R_DS(on) = 0.042 Ω @ 10 V, Q_g = 12 nC - higher gate charge, same voltage limit	Higher switching loss at >500 kHz; unsuitable for high-frequency boost converters requiring <3 nC Q_g	Use only in cost-sensitive, low-frequency (<200 kHz) load switch designs where gate drive strength exceeds 12 nC requirement.

Compared with DMN3026LSD-13 and AO3400, SI2392DS-T1-GE3 uniquely delivers 100 V capability with sub-3 nC gate charge-enabling high-efficiency, high-voltage boost and flyback designs in SOT-23 footprint where alternatives require SO-8 or fail voltage rating.

Availability

SI2392DS-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, load switching, and LED backlighting applications requiring stable component supply, RoHS-compliant sourcing, and halogen-free manufacturing.

Supply support for SI2392DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized packaging.

The SI2392DS-T1-GE3 belongs to Vishay's LITTLE FOOT® SOT-23 power MOSFET family, engineered specifically for thermally demanding yet space-constrained applications such as mobile computing power rails and LCD TV backlight drivers.

FAQ

What is the maximum continuous drain current for SI2392DS-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI2392DS-T1-GE3 is 2.5 A at T_C = 70 °C, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be applied when the device is mounted on limited copper area without forced airflow. SI2392DS-T1-GE3 maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does SI2392DS-T1-GE3 support logic-level gate drive from a 3.3 V microcontroller?

Yes, SI2392DS-T1-GE3 supports logic-level gate drive from a 3.3 V source: its gate threshold voltage V_GS(th) is specified from 1.2 V to 3.0 V, and it delivers R_DS(on) = 0.189 Ω at V_GS = 4.5 V and I_D = 1 A. While full enhancement occurs at ≥4.5 V, usable conduction begins at 3.3 V-making SI2392DS-T1-GE3 suitable for direct GPIO control in low-current load switch applications.

What is the thermal resistance from junction to ambient (R_thJA) for SI2392DS-T1-GE3 on a standard FR4 board?

The maximum junction-to-ambient thermal resistance R_thJA for SI2392DS-T1-GE3 is 100 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value applies for ≤5 s pulse duration; for steady-state operation, the typical R_thJA is 75 °C/W. SI2392DS-T1-GE3 relies on PCB copper connected to the drain (pin 3) to achieve this rating-insufficient copper area will degrade thermal performance.

Is SI2392DS-T1-GE3 suitable for avalanche energy handling in inductive load switching?

Yes, SI2392DS-T1-GE3 is rated for single-pulse avalanche energy E_AS = 0.45 mJ and single-pulse avalanche current I_AS = 3 A (L = 0.1 mH), confirming its ability to safely absorb inductive energy during unclamped switching events. This ruggedness is validated by 100 % UIS testing, making SI2392DS-T1-GE3 appropriate for relay replacement and solenoid driving where voltage spikes exceed V_DS.

What does the "-GE3" suffix indicate in SI2392DS-T1-GE3?

The "-GE3" suffix in SI2392DS-T1-GE3 denotes Vishay's standard tape-and-reel packaging for SOT-23 devices, with lead (Pb)-free and halogen-free construction compliant with JEDEC JS709A and RoHS Directive 2011/65/EU. It confirms that SI2392DS-T1-GE3 meets environmental compliance requirements for global electronics manufacturing without requiring special processing or exemptions.

SI2392DS-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 126mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 196 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta), 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23

SI2392DS-T1-GE3 FAQ

1.How can I place an order for SI2392DS-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2392DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2392DS-T1-GE3 reliable?

The price and inventory of SI2392DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2392DS-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI2392DS-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2392DS-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2392DS-T1-GE3?

SI2392DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2392DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2392DS-T1-GE3?

For technical support, including SI2392DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2392DS-T1-GE3 requirements.

6.How does Aetrix verify that SI2392DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI2392DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2392DS-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI2392DS-T1-GE3?

All SI2392DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2392DS-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2392DS-T1-GE3 part is unused and in its original packaging.

Return procedure for SI2392DS-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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