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Vishay Siliconix SI3407DV-T1-E3
- Part No.:
- SI3407DV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3407DV-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,331
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Product details
Overview
SI3407DV-T1-E3 from Vishay Siliconix is a P-channel -20 V TrenchFET® MOSFET optimized for PWM load switching in portable computing, with RDS(on) = 0.024 Ω at VGS = -4.5 V, continuous drain current of -8 A (TC = 25 °C), and total gate charge of 21 nC - enabling fast, efficient power control in notebook PC power rails.
For engineers reviewing the SI3407DV-T1-E3 datasheet, SI3407DV-T1-E3 pinout, SI3407DV-T1-E3 application, or SI3407DV-T1-E3 equivalent, this page delivers verified package mapping (TSOP-6), validated thermal performance (RthJA = 62.5 °C/W max), body diode recovery specs (trr = 37–56 ns), and direct alternatives for high-side load switch replacement.
Technical Context
This device operates as a high-side load switch with gate-threshold voltage VGS(th) ranging from -0.65 V to -1.5 V, ensuring reliable turn-on with low-voltage logic drivers. Its trench-based structure delivers low RDS(on) and high transconductance (gfs = 25 S), supporting stable conduction under pulsed loads up to -25 A.
The integrated source-drain body diode exhibits VSD = -0.8 to -1.2 V at IS = -6 A and reverse recovery charge Qrr = 22–33 nC, making it suitable for synchronous rectification and bidirectional current handling in compact DC/DC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 3.3 V/5 V rail protection |
| RDS(on) | 0.024 Ω at VGS = -4.5 V - Enables <190 mW conduction loss at 8 A |
| ID (continuous) | -8 A at TC = 25 °C - Supports sustained load switching in thermally managed PCB areas |
| Qg | 21 nC at VGS = -4.5 V - Allows fast PWM edge rates with low-drive-strength controllers |
| tr/tf | 11–17 ns / 39–59 ns - Minimizes switching transition losses in high-frequency DC/DC |
| RthJA | 62.5 °C/W max - Requires ≥1 in² copper pour for safe operation at full current |
| VGS(th) | -0.65 to -1.5 V - Ensures turn-on compatibility with 3.3 V GPIO and dedicated gate drivers |
Pinout & Package
SI3407DV-T1-E3 is housed in a surface-mount TSOP-6 package (JEDEC MO-193C), measuring 3.05 mm × 2.85 mm × 1.0 mm, with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; electrically and thermally connected to exposed pad |
| 3 | Gate (G) | Control input; requires ≤±12 V drive; 100 % Rg tested |
| 4 | Source (S) | Return path for load current; referenced to system ground in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 25% lower RDS(on) vs. planar P-channel MOSFETs at same die size |
| PWM-optimized switching | Low Qgd/Qg ratio (5/21 nC) reduces Miller-induced shoot-through risk |
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress without external snubbers |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for green electronics manufacturing |
| Body diode trr & Qrr specified | Enables accurate loss modeling in synchronous buck or OR-ing applications |
Applications
| Notebook PC Load Switch | USB-C Power Delivery Inrush Control |
|---|---|
Use Scenario: High-side power gating of CPU core voltage rail during sleep/wake transitions. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high load switch with gate driven by dedicated PMIC enable signal. Use Value: Low RDS(on) limits voltage drop to <200 mV at 8 A, preserving rail accuracy; fast turn-off (tf ≤59 ns) prevents overshoot during rail collapse. |
Use Scenario: Inrush current limiting on 20 V USB-C PD input before downstream DC/DC conversion. IC Role / Device Role / Timing Role: Soft-start controlled high-side switch using RC-gated turn-on to limit dI/dt. Use Value: Specified Qg = 21 nC enables precise RC timing; body diode VSD ≤ -1.2 V ensures minimal forward drop during hot-plug reverse conduction. |
| Industrial Sensor Node Power Management | POS Terminal Battery Backup Switchover |
Use Scenario: Selective power enable for BLE radio and analog front-end in battery-powered IoT sensor nodes. IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating subsystems during deep-sleep mode. Use Value: VGS(th) as low as -0.65 V allows direct drive from 1.8 V microcontroller GPIO; IDSS ≤ -1 µA minimizes standby leakage. |
Use Scenario: Seamless switchover between main 12 V supply and backup Li-ion battery in point-of-sale terminals. IC Role / Device Role / Timing Role: Back-to-back P-channel configuration with SI3407DV-T1-E3 as primary high-side switch. Use Value: Matched RDS(on) tolerance (0.024 Ω typ.) ensures balanced current sharing; 150 °C TJ(max) supports extended operation in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3405DV-T1-E3 | RDS(on) = 0.018 Ω @ -4.5 V; higher ID = -9.5 A; same TSOP-6 footprint | Better efficiency at >6 A loads; slightly higher Qg (25 nC) | Select when lower conduction loss outweighs marginal gate drive overhead |
| DMN2020LFG-7 | RDS(on) = 0.022 Ω @ -4.5 V; different lead-free plating; DFN1006-6 package (1.0 × 1.0 mm) | Smaller footprint but higher RthJA (125 °C/W); no exposed drain pad | Select for ultra-compact layouts where thermal derating is acceptable |
Compared with SI3407DV-T1-E3, Si3405DV-T1-E3 offers lower RDS(on) in identical packaging for improved efficiency, while DMN2020LFG-7 trades thermal performance for board space reduction - both require layout review due to non-pin-compatible footprints.
Availability
SI3407DV-T1-E3 is available at Aetrix Electronics and suitable for notebook PC power management, USB-C PD inrush control, and industrial sensor node load switching requiring stable component supply across production lifecycles.
Supply support for SI3407DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, reliability, and green compliance.
The Si3407DV series belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in space-constrained portable and industrial electronics.
FAQ
What is the maximum continuous drain current rating for SI3407DV-T1-E3 at 70 °C case temperature?
The SI3407DV-T1-E3 supports -8 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This rating assumes proper PCB copper area and airflow; derating applies above 70 °C case temperature per the published power derating curve.
Does SI3407DV-T1-E3 include an integrated ESD protection diode on the gate?
No, SI3407DV-T1-E3 does not integrate gate ESD protection. Its gate-source leakage IGSS is specified at ±100 nA with VGS = ±12 V, and gate oxide robustness relies on external layout practices - Vishay recommends series gate resistors and local TVS clamping for systems exposed to handling or connector hot-plug events.
Can SI3407DV-T1-E3 be used in a synchronous rectifier configuration?
Yes, SI3407DV-T1-E3 can serve as a synchronous rectifier due to its specified body diode parameters: VSD = -0.8 to -1.2 V at IS = -6 A and trr = 37–56 ns. However, its P-channel topology requires complementary gate drive timing - it is not self-synchronizing and must be paired with a controller that supports high-side P-FET gate timing.
Is the TSOP-6 package of SI3407DV-T1-E3 lead (Pb)-free and halogen-free?
The SI3407DV-T1-E3 variant is lead (Pb)-free per JEDEC J-STD-609, but it is not halogen-free. The halogen-free version is explicitly designated as SI3407DV-T1-GE3; ordering SI3407DV-T1-E3 confirms compliance with RoHS Directive 2002/95/EC only.
What is the typical gate resistance Rg value for SI3407DV-T1-E3, and how is it tested?
The SI3407DV-T1-E3 has a typical gate resistance Rg of 1.3 Ω, with a maximum of 13 Ω at 1 MHz. Per datasheet Section 1, every unit undergoes 100 % Rg testing during production - a critical screen for gate integrity and switching consistency in high-volume load switch applications.
SI3407DV-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1670 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 4.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3407DV-T1-E3 FAQ
1.How can I place an order for SI3407DV-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3407DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3407DV-T1-E3 reliable?
The price and inventory of SI3407DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3407DV-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI3407DV-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3407DV-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3407DV-T1-E3?
SI3407DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3407DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3407DV-T1-E3?
For technical support, including SI3407DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3407DV-T1-E3 requirements.
6.How does Aetrix verify that SI3407DV-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI3407DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3407DV-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI3407DV-T1-E3?
All SI3407DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3407DV-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3407DV-T1-E3 part is unused and in its original packaging.
Return procedure for SI3407DV-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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