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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3410DV-T1-E3

Name: SI3410DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3410DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3410DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3410DV-T1-E3.pdf

Description:: MOSFET N-CH 30V 8A 6TSOP

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Product details

Overview

SI3410DV-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in TSOP-6 package, with R_DS(on) = 0.0195 Ω at V_GS = 10 V, 8-A continuous drain current (T_C = 25 °C), and 9.2 nC total gate charge. It serves as a high-efficiency load switch in notebook power rails.

For engineers reviewing the SI3410DV-T1-E3 datasheet, SI3410DV-T1-E3 pinout, SI3410DV-T1-E3 application, or SI3410DV-T1-E3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V drive, halogen-free and RoHS-compliant construction, thermal resistance of 25 °C/W (junction-to-foot), and suitability for compact DC-DC converter output stages and battery protection circuits.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its 30-V V_DS rating and ±20-V V_GS range support robust operation in 3.3 V–12 V control environments.

The device features a built-in body diode with 0.77–1.2 V forward voltage at 1.7 A and 21–40 ns reverse recovery time, enabling synchronous rectification and flyback energy management in low-current DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input systems and 5 V/3.3 V logic-level gate drive
R_DS(on) @ 10 V	0.0195 Ω - Enables ≤150 mW conduction loss at 8 A, reducing thermal load in space-constrained PCBs
R_DS(on) @ 4.5 V	0.023 Ω - Ensures full enhancement with standard 4.5 V microcontroller GPIOs without level-shifting
Q_g	9.2 nC - Supports efficient 1–2 MHz switching in point-of-load converters with low driver power demand
T_J Range	−55 to +150 °C - Qualified for industrial temperature operation without derating in ambient up to 85 °C
R_thJF	25 °C/W (typ.) - Enables direct thermal coupling to copper pour or heatsink pad for >2 W continuous dissipation
I_D (T_C = 25 °C)	8 A - Package-limited current supports high peak loads in notebook load-switch applications

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Parallel-connected drain terminals tied to internal die drain metallization and exposed thermal pad - must be soldered to large copper area for thermal performance
3	Source (S)	Common source node for channel conduction; referenced to system ground in high-side or low-side configurations
4	Gate (G)	Control terminal requiring <100 nA leakage; driven by 3.3 V/4.5 V logic; gate resistance 2.4 Ω limits ringing in fast-switching layouts

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 23% lower R_DS(on) vs. planar MOSFETs at same die size, enabling smaller packages without sacrificing current capability
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - eliminates brominated flame retardants and lead, supporting green manufacturing
Low Q_gd/Q_g ratio (2.5/9.2 nC)	Reduces Miller effect-induced switching delay, improving controllability in hard-switched DC-DC converters
Body diode t_rr = 21–40 ns	Minimizes reverse recovery losses during synchronous rectification, critical for >500 kHz buck converter efficiency
Marking code "AM"	Enables traceable lot identification per Vishay Document 69254; supports counterfeit mitigation and supply chain audit

Applications

Notebook Load Switch	Low-Current DC-DC Converter
Use Scenario: Power sequencing and rail isolation in ultraportable notebooks during sleep/wake transitions. IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V or 3.3 V system rail delivery with <10 µs turn-on/off response. Use Value: 0.023 Ω R_DS(on) at 4.5 V ensures <100 mV dropout at 4 A, preserving voltage margin for sensitive SoCs.	Use Scenario: Output synchronous rectifier in 1–3 A buck converters powering DDR memory or FPGA I/O banks. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 21 ns body diode t_rr prevents shoot-through during dead-time, enabling stable 1 MHz operation.
Battery Protection Circuit	USB Power Delivery Switch
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs for wearables and IoT sensors. IC Role / Device Role / Timing Role: High-side current-sense switch with integrated overtemperature shutdown via junction sensing. Use Value: 150 °C max T_J and −55 °C min T_J allow operation across extended environmental ranges without external thermal monitoring.	Use Scenario: VBUS path control in USB-C PD 3.0 compliant ports handling up to 20 V/3 A. IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow between host and peripheral under PD contract negotiation. Use Value: 30 V V_DS rating provides 100 % margin over USB PD maximum 20 V, eliminating avalanche stress during hot-plug transients.

Notebook Load Switch

Low-Current DC-DC Converter

Use Scenario: Power sequencing and rail isolation in ultraportable notebooks during sleep/wake transitions.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V or 3.3 V system rail delivery with <10 µs turn-on/off response.

Use Value: 0.023 Ω R_DS(on) at 4.5 V ensures <100 mV dropout at 4 A, preserving voltage margin for sensitive SoCs.

Use Scenario: Output synchronous rectifier in 1–3 A buck converters powering DDR memory or FPGA I/O banks.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 21 ns body diode t_rr prevents shoot-through during dead-time, enabling stable 1 MHz operation.

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs for wearables and IoT sensors.

IC Role / Device Role / Timing Role: High-side current-sense switch with integrated overtemperature shutdown via junction sensing.

Use Value: 150 °C max T_J and −55 °C min T_J allow operation across extended environmental ranges without external thermal monitoring.

Use Scenario: VBUS path control in USB-C PD 3.0 compliant ports handling up to 20 V/3 A.

IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow between host and peripheral under PD contract negotiation.

Use Value: 30 V V_DS rating provides 100 % margin over USB PD maximum 20 V, eliminating avalanche stress during hot-plug transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-E3	R_DS(on) = 0.0145 Ω @ 10 V; higher ID = 10 A; same TSOP-6 package	Lower conduction loss at high current; requires tighter thermal design due to higher power density	Select when ≥10 A continuous current or <100 mΩ target R_DS(on) is required; verify PCB copper area supports increased power dissipation
DMN3026LSD-13	R_DS(on) = 0.022 Ω @ 4.5 V; 6.5 A rating; same 30 V rating; SO-8 package	Larger footprint and higher R_thJA (62 °C/W); less suitable for ultra-thin notebooks	Choose when board layout allows SO-8 and legacy footprint compatibility is prioritized over size and thermal performance

Compared with Si3456DV-T1-E3 and DMN3026LSD-13, the SI3410DV-T1-E3 offers optimal balance of low-profile TSOP-6 packaging, 4.5 V logic compatibility, and 8 A capability-making it preferred for space-constrained, thermally sensitive notebook and portable DC-DC designs where moderate current and minimal gate drive overhead are key.

Availability

SI3410DV-T1-E3 is available at Aetrix Electronics and suitable for notebook load switching, low-current DC-DC converters, and USB power delivery applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for SI3410DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si3410DV product line targets compact, high-density power management in portable computing and consumer electronics, delivering optimized R_DS(on)-Q_g trade-offs for battery-powered systems.

FAQ

What is the maximum continuous drain current for SI3410DV-T1-E3 at 70 °C case temperature?

The SI3410DV-T1-E3 supports 8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and remains unchanged from the 25 °C rating, reflecting the device's robust thermal design and TSOP-6 package construction. Derating applies only under ambient conditions (T_A).

Does SI3410DV-T1-E3 support 3.3 V gate drive for full enhancement?

The SI3410DV-T1-E3 is not fully enhanced at 3.3 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from 1 V to 3 V, but R_DS(on) is only guaranteed at V_GS = 4.5 V (0.023 Ω) and V_GS = 10 V (0.0195 Ω). At 3.3 V, conduction loss increases significantly; use 4.5 V or higher for reliable operation of SI3410DV-T1-E3.

What is the thermal resistance from junction to foot (R_thJF) for SI3410DV-T1-E3?

The SI3410DV-T1-E3 has a typical junction-to-foot thermal resistance (R_thJF) of 25 °C/W under steady-state conditions, with a maximum of 30 °C/W. This parameter reflects heat transfer from the silicon die directly to the exposed drain pad, making it critical for thermal design when the TSOP-6 drain terminals are soldered to a large copper pour.

Is SI3410DV-T1-E3 halogen-free and RoHS-compliant?

Yes, SI3410DV-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. The "-E3" suffix explicitly denotes lead-free and halogen-free construction, verified in Vishay's documentation (Document Number 69254, Rev. B).

Can SI3410DV-T1-E3 be used in synchronous rectification applications?

Yes, SI3410DV-T1-E3 is suitable for synchronous rectification due to its low R_DS(on), fast body diode (t_rr = 21–40 ns), and low Q_gd/Q_g ratio. Its 30 V V_DS rating and 0.77–1.2 V V_SD support efficient replacement of Schottky diodes in buck converters up to 1 MHz, provided gate timing avoids shoot-through.

SI3410DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1295 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 4.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3410DV-T1-E3 FAQ

1.How can I place an order for SI3410DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3410DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3410DV-T1-E3 reliable?

The price and inventory of SI3410DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3410DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3410DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3410DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3410DV-T1-E3?

SI3410DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3410DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3410DV-T1-E3?

For technical support, including SI3410DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3410DV-T1-E3 requirements.

6.How does Aetrix verify that SI3410DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3410DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3410DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3410DV-T1-E3?

All SI3410DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3410DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3410DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3410DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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