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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3430DV-T1-BE3

Name: SI3430DV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3430DV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3430DV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3430DV-T1-BE3.pdf

Description:: MOSFET N-CH 100V 1.8A 6TSOP

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Product details

Overview

SI3430DV-T1-BE3 from Vishay Siliconix is an N-channel 100 V, 2.4 A surface-mount MOSFET in TSOP-6 package, with R_DS(on) = 0.170 Ω at V_GS = 10 V, Q_g = 5.5 nC, and T_J rating up to +150 °C. It serves as a high-efficiency PWM switch in DC-DC converters and load switching circuits operating under 100 V bus conditions.

For engineers reviewing the SI3430DV-T1-BE3 datasheet, SI3430DV-T1-BE3 pinout, SI3430DV-T1-BE3 application, or SI3430DV-T1-BE3 equivalent, key selection criteria include its low gate charge for fast switching, verified R_g testing, thermal resistance (R_thJA = 90 °C/W), and suitability for space-constrained industrial power management designs.

Technical Context

This MOSFET features a planar silicon process optimized for PWM efficiency in medium-voltage switching applications. Its gate threshold voltage (V_GS(th) = 2–4.2 V) enables reliable turn-on with standard logic-level drivers, while its body diode exhibits t_rr = 50–80 ns for moderate-frequency synchronous rectification support.

The device operates with continuous drain current of 2.4 A at T_A = 25 °C and derates to 1.3 A at 85 °C, supported by a maximum junction-to-foot thermal resistance of 30 °C/W. Its dynamic parameters-including t_d(on) = 9 ns, t_r = 11 ns, t_d(off) = 16 ns, and t_f = 9 ns-are characterized at V_DD = 50 V, R_g = 6 Ω, and I_D ≅ 1 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transients in industrial power supplies
R_DS(on) max @ 10 V	0.170 Ω - limits conduction loss to ≤ 975 mW at 2.4 A, enabling compact thermal design
Q_g typ	5.5 nC - enables efficient 500 kHz–1 MHz switching with low driver power demand
I_D continuous @ 25 °C	2.4 A - rated for sustained load switching in auxiliary power rails and LED drivers
t_r/t_f	11 ns / 9 ns - reduces switching transition losses and EMI generation in hard-switched topologies
T_J range	−55 to +150 °C - qualified for extended temperature operation in automotive cabin and industrial control environments

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; internally connected to exposed pad for low R_thJF
3	Gate (G)	Control terminal requiring ≤ ±20 V drive; 100 % R_g tested for consistent switching timing
4	Source (S)	Reference node for gate drive and current sensing; tied to PCB ground plane in most configurations

Key Features

Feature	Design Value
High-efficiency PWM optimization	Low Q_g/R_DS(on) ratio (32.4 nC/Ω) minimizes combined conduction and switching losses in 300–1000 kHz converters
100 % R_g tested	Ensures gate resistance between 1–4 Ω, guaranteeing predictable turn-on/turn-off timing across production lots
Thermally enhanced drain pad	Exposed drain connects pins 1/2/5/6 and bottom pad, enabling R_thJF = 25–30 °C/W for improved power handling
Robust avalanche rating	Rated for 6 A repetitive avalanche current and 1.8 mJ energy, supporting inductive load switching without external snubbers

Applications

DC-DC Buck Converter	Hot-Swap Controller
Use Scenario: Step-down regulation from 24–48 V input to 3.3–12 V output in programmable logic controllers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with gate drive referenced to switched node. Use Value: Low R_DS(on) and Q_g reduce total power loss to <1.2 W at 2 A load, allowing use without heatsink on FR4 board.	Use Scenario: Inrush current limiting during hot insertion of modular I/O cards into backplane systems. IC Role / Device Role / Timing Role: Load switch controlled via linear gate bias to limit dI/dt during power-up sequencing. Use Value: Verified R_g and tight V_GS(th) tolerance enable precise gate voltage ramp control, achieving <10 ms soft-start time.
LED Constant-Current Driver	Industrial Solenoid Interface
Use Scenario: Constant-current dimming of high-brightness LED strings in factory lighting fixtures. IC Role / Device Role / Timing Role: Low-side PWM switch modulating current through sense resistor at 1–5 kHz. Use Value: R_DS(on) stability over −40 to +125 °C ensures ±3 % current accuracy without recalibration.	Use Scenario: Driving 24 V DC solenoids in pneumatic valve manifolds used in process automation. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode providing freewheeling path during de-energization. Use Value: t_rr = 50–80 ns and E_AR = 1.8 mJ suppress voltage spikes >60 V, eliminating need for external flyback diode.

DC-DC Buck Converter

Hot-Swap Controller

Use Scenario: Step-down regulation from 24–48 V input to 3.3–12 V output in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with gate drive referenced to switched node.

Use Value: Low R_DS(on) and Q_g reduce total power loss to <1.2 W at 2 A load, allowing use without heatsink on FR4 board.

Use Scenario: Inrush current limiting during hot insertion of modular I/O cards into backplane systems.

IC Role / Device Role / Timing Role: Load switch controlled via linear gate bias to limit dI/dt during power-up sequencing.

Use Value: Verified R_g and tight V_GS(th) tolerance enable precise gate voltage ramp control, achieving <10 ms soft-start time.

LED Constant-Current Driver

Industrial Solenoid Interface

Use Scenario: Constant-current dimming of high-brightness LED strings in factory lighting fixtures.

IC Role / Device Role / Timing Role: Low-side PWM switch modulating current through sense resistor at 1–5 kHz.

Use Value: R_DS(on) stability over −40 to +125 °C ensures ±3 % current accuracy without recalibration.

Use Scenario: Driving 24 V DC solenoids in pneumatic valve manifolds used in process automation.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode providing freewheeling path during de-energization.

Use Value: t_rr = 50–80 ns and E_AR = 1.8 mJ suppress voltage spikes >60 V, eliminating need for external flyback diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3430DV-T1-E3	Same die and TSOP-6 package; Pb-free but not halogen-free (Br/Cl content unspecified)	Identical electrical specs; suitable where RoHS-6 compliance suffices without full halogen-free requirement	Select when halogen-free certification is not mandated by end-equipment environmental policy
DMN3020LSD-13	30 V V_DS, 6.5 A I_D, R_DS(on) = 0.028 Ω @ 10 V - lower voltage, higher current, much lower R_DS(on)	Not interchangeable for 100 V applications; only viable in sub-30 V systems requiring higher current density	Choose only if system bus voltage is ≤30 V and R_DS(on) reduction below 0.03 Ω is critical for thermal budget

Compared with SI3430DV-T1-BE3, Si3430DV-T1-E3 offers identical performance with differing environmental compliance, while DMN3020LSD-13 provides superior conduction efficiency only in ≤30 V designs-neither is pin-compatible for direct replacement in 100 V circuits.

Availability

SI3430DV-T1-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, LED drivers, and hot-swap modules requiring stable component supply, long-term manufacturability, and halogen-free compliance.

Supply support for SI3430DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and ruggedized packaging.

The SI3430DV series belongs to Vishay's logic-level N-channel MOSFET product line, engineered for high-frequency switching in space-constrained industrial and computing power management applications.

FAQ

What is the maximum continuous drain current for SI3430DV-T1-BE3 at 85 °C ambient?

The SI3430DV-T1-BE3 supports 1.3 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions. This derating reflects thermal limitations of the TSOP-6 package on standard FR4 PCBs without additional copper pour or airflow. The SI3430DV-T1-BE3 maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does SI3430DV-T1-BE3 have a guaranteed gate resistance specification?

Yes, SI3430DV-T1-BE3 undergoes 100 % R_g testing per datasheet, with gate resistance guaranteed between 1 Ω and 4 Ω. This ensures consistent switching speed and driver stage loading across all units. The SI3430DV-T1-BE3 datasheet also specifies typical R_g = 2.8 Ω at 5 MHz, confirming tight distribution for timing-critical PWM applications.

Can SI3430DV-T1-BE3 be used in avalanche mode for inductive load switching?

Yes, SI3430DV-T1-BE3 is rated for repetitive avalanche operation with I_AR = 6 A and E_AR = 1.8 mJ at T_J = 25 °C and duty cycle ≤ 1 %. This allows safe clamping of inductive kickback in solenoid and relay drivers without external protection components. The SI3430DV-T1-BE3 avalanche capability is production-tested and documented in the Absolute Maximum Ratings table.

What is the thermal resistance from junction to ambient for SI3430DV-T1-BE3 on a standard PCB?

The SI3430DV-T1-BE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 110 °C/W under steady-state conditions on a 1" × 1" FR4 board, with typical value 90 °C/W. This value assumes standard JEDEC test conditions and defines the worst-case temperature rise per watt dissipated. The SI3430DV-T1-BE3 datasheet confirms this in the Thermal Resistance Ratings table.

Is SI3430DV-T1-BE3 compatible with lead-free reflow soldering processes?

Yes, SI3430DV-T1-BE3 is qualified for lead-free reflow per J-STD-020, with peak reflow temperature up to 260 °C. Its TSOP-6 package uses matte tin plating and meets IPC/JEDEC standards for MSL Level 1. The SI3430DV-T1-BE3 marking "-BE3" explicitly denotes lead-free and halogen-free construction compliant with Vishay's S19-0836 specification.

SI3430DV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 4.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.14W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3430DV-T1-BE3 FAQ

1.How can I place an order for SI3430DV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3430DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3430DV-T1-BE3 reliable?

The price and inventory of SI3430DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3430DV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3430DV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3430DV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3430DV-T1-BE3?

SI3430DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3430DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3430DV-T1-BE3?

For technical support, including SI3430DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3430DV-T1-BE3 requirements.

6.How does Aetrix verify that SI3430DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3430DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3430DV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3430DV-T1-BE3?

All SI3430DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3430DV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3430DV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3430DV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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