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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3430DV-T1-GE3

Name: SI3430DV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3430DV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3430DV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3430DV-T1-GE3.pdf

Description:: MOSFET N-CH 100V 1.8A 6TSOP

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Product details

Overview

SI3430DV-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 2.4 A (T_A = 25 °C) MOSFET in TSOP-6 package, with R_DS(on) = 0.170 Ω at V_GS = 10 V and Q_g = 5.5 nC, optimized for high-efficiency PWM switching in low-power DC-DC converters and load switches.

For engineers reviewing the SI3430DV-T1-GE3 datasheet, SI3430DV-T1-GE3 pinout, SI3430DV-T1-GE3 application, or SI3430DV-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low gate charge for fast switching, thermal resistance (R_thJA = 90 °C/W), and Pb-free/halogen-free TSOP-6 footprint compatibility with space-constrained industrial and consumer power stages.

Technical Context

This MOSFET employs a trench-based silicon process to achieve stable R_DS(on) over temperature and low gate threshold voltage (V_GS(th) = 2–4.2 V). Its dynamic parameters-Q_g = 5.5 nC, Q_gd = 1.4 nC, and t_r/t_f ≤ 20 ns-support efficient hard-switching up to several hundred kHz.

The integrated body diode exhibits V_SD = 0.8–1.2 V at I_S = 1.7 A and t_rr = 50–80 ns, enabling synchronous rectification and freewheeling in buck and flyback topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transient spikes in industrial power supplies
R_DS(on) max @ V_GS = 10 V	0.170 Ω - limits conduction loss to ≤ 980 mW at 2.4 A continuous drain current
Q_g typ.	5.5 nC - enables <100 ns total switching time with 6 Ω gate driver, reducing switching loss in PWM stages
I_D continuous @ T_A = 25 °C	2.4 A - delivers up to 2.4 W dissipation in free-air on FR4, suitable for compact 3–5 W DC-DC modules
R_thJA max (steady state)	110 °C/W - requires minimal copper area (≥1 in²) for safe operation at full current in ambient ≤ 60 °C
V_GS(th)	2–4.2 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, with exposed drain pad for thermal enhancement. Pin 1–2–5–6: Drain; Pin 3: Gate; Pin 4: Source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain	High-side switch node; electrically tied to exposed thermal pad - must be connected to power plane for thermal management
3	Gate	Control input; requires low-impedance drive (<6 Ω) to minimize switching loss and prevent oscillation
4	Source	Reference node for gate drive and current sensing; connects to ground or low-side return path

Key Features

Feature	Design Value
100 % R_g tested	Ensures gate resistance ≤ 4 Ω across all units, guaranteeing consistent switching timing and EMI behavior
High-efficiency PWM optimized	Low Q_g/R_DS(on) ratio (32.4 nC/Ω) minimizes combined conduction + switching losses in 200–500 kHz converters
Lead (Pb)-free and halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709E requirements - no brominated flame retardants or antimony trioxide
Repetitive avalanche rated	EAR = 1.8 mJ - withstands inductive turn-off transients without derating in relay drivers or motor gate control

Applications

Load Switch for USB-C PD	Buck Converter High-Side Switch
Use Scenario: Enables/disables 5–20 V power delivery paths in portable electronics with inrush current limiting and thermal foldback. IC Role / Device Role / Timing Role: Low-side or high-side load switch controlled by system PMIC; operates in linear or saturated mode during enable transitions. Use Value: R_DS(on) = 0.170 Ω limits voltage drop to <430 mV at 2.4 A, preserving bus voltage margin while dissipating <1 W under full load.	Use Scenario: High-side switch in 3–12 V input, 1–5 V output buck regulators for FPGA core supplies and microcontroller domains. IC Role / Device Role / Timing Role: Synchronously switched power FET driven by dedicated gate driver IC; duty cycle modulated at 300–500 kHz. Use Value: Q_g = 5.5 nC allows full turn-on in <35 ns with 150 mA driver, minimizing dead-time loss and improving light-load efficiency.
Industrial Sensor Power Switch	LED Driver Current Sink
Use Scenario: Isolates 24 V field power to analog sensor modules with reverse-polarity and overcurrent protection. IC Role / Device Role / Timing Role: Always-on or enable-controlled high-side switch; handles steady-state current with occasional surge events. Use Value: Avalanche rating (I_AR = 6 A, E_AR = 1.8 mJ) absorbs inductive kickback from solenoid-actuated sensors without snubber circuitry.	Use Scenario: Constant-current sink for indicator LEDs or status lighting in HMI panels and control cabinets. IC Role / Device Role / Timing Role: Linear-mode current regulator using source degeneration resistor; operated below saturation for precise I_LED control. Use Value: V_GS(th) tolerance (2–4.2 V) enables accurate current setting with ±5 % reference voltage, supporting 10–100 mA LED loads.

Load Switch for USB-C PD

Buck Converter High-Side Switch

Use Scenario: Enables/disables 5–20 V power delivery paths in portable electronics with inrush current limiting and thermal foldback.

IC Role / Device Role / Timing Role: Low-side or high-side load switch controlled by system PMIC; operates in linear or saturated mode during enable transitions.

Use Value: R_DS(on) = 0.170 Ω limits voltage drop to <430 mV at 2.4 A, preserving bus voltage margin while dissipating <1 W under full load.

Use Scenario: High-side switch in 3–12 V input, 1–5 V output buck regulators for FPGA core supplies and microcontroller domains.

IC Role / Device Role / Timing Role: Synchronously switched power FET driven by dedicated gate driver IC; duty cycle modulated at 300–500 kHz.

Use Value: Q_g = 5.5 nC allows full turn-on in <35 ns with 150 mA driver, minimizing dead-time loss and improving light-load efficiency.

Industrial Sensor Power Switch

LED Driver Current Sink

Use Scenario: Isolates 24 V field power to analog sensor modules with reverse-polarity and overcurrent protection.

IC Role / Device Role / Timing Role: Always-on or enable-controlled high-side switch; handles steady-state current with occasional surge events.

Use Value: Avalanche rating (I_AR = 6 A, E_AR = 1.8 mJ) absorbs inductive kickback from solenoid-actuated sensors without snubber circuitry.

Use Scenario: Constant-current sink for indicator LEDs or status lighting in HMI panels and control cabinets.

IC Role / Device Role / Timing Role: Linear-mode current regulator using source degeneration resistor; operated below saturation for precise I_LED control.

Use Value: V_GS(th) tolerance (2–4.2 V) enables accurate current setting with ±5 % reference voltage, supporting 10–100 mA LED loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.035 Ω @ 10 V (lower), but V_DS = 30 V only - unsuitable for >30 V rails	Optimized for 5–12 V load switching; cannot replace SI3430DV-T1-GE3 in 48 V or PoE systems	Select only when input voltage ≤ 24 V and R_DS(on) reduction justifies redesign for lower-voltage package
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 4.5 V, Q_g = 5.2 nC, but V_DS = 30 V - same voltage limitation	Better logic-level drive at 3.3 V, yet lacks 100 V rating and avalanche capability of SI3430DV-T1-GE3	Prefer for ultra-low-voltage battery-powered systems where 100 V rating is unnecessary

Compared with DMN3026LSD-13 and IRLML6344TRPBF, SI3430DV-T1-GE3 uniquely balances 100 V rating, avalanche robustness, and moderate R_DS(on) in TSOP-6 - making it irreplaceable in 24–48 V industrial power switching where voltage margin and transient immunity are critical.

Availability

SI3430DV-T1-GE3 is available at Aetrix Electronics and suitable for industrial sensor interfaces, USB-C power delivery load switching, and compact buck converter designs requiring stable component supply and long-term manufacturability.

Supply support for SI3430DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si3430DV product line targets space-constrained, medium-voltage power management applications - delivering optimized R_DS(on)/Q_g trade-offs for high-frequency switching in industrial, computing, and consumer power stages.

FAQ

What is the maximum continuous drain current for SI3430DV-T1-GE3 at 85 °C ambient?

The maximum continuous drain current for SI3430DV-T1-GE3 is 1.3 A at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (R_thJA = 90–110 °C/W) and ensures junction temperature remains ≤ 150 °C with standard PCB layout. SI3430DV-T1-GE3 must be mounted on ≥1 in² copper for this rating to hold.

Does SI3430DV-T1-GE3 support logic-level gate drive?

Yes, SI3430DV-T1-GE3 has a gate threshold voltage range of 2–4.2 V and delivers R_DS(on) = 0.185 Ω at V_GS = 6 V, enabling direct drive from 3.3 V or 5 V microcontrollers. However, full performance (R_DS(on) = 0.170 Ω) requires V_GS = 10 V, so a level-shifting gate driver is recommended for high-efficiency PWM use of SI3430DV-T1-GE3.

Is SI3430DV-T1-GE3 suitable for avalanche operation?

Yes, SI3430DV-T1-GE3 is rated for repetitive avalanche energy (E_AR = 1.8 mJ) and avalanche current (I_AR = 6 A) with L = 0.1 mH. This makes SI3430DV-T1-GE3 appropriate for inductive load switching - such as relay coils or solenoids - where unclamped inductive kickback would otherwise damage non-avalanche-rated MOSFETs.

What is the thermal resistance from junction to foot (R_thJF) for SI3430DV-T1-GE3?

The maximum junction-to-foot thermal resistance (R_thJF) for SI3430DV-T1-GE3 is 30 °C/W under steady-state conditions. This parameter reflects heat transfer from the die directly to the exposed drain pad, and is critical when mounting SI3430DV-T1-GE3 to a heatsink or internal power plane - enabling higher current handling than junction-to-ambient alone permits.

How does the TSOP-6 package of SI3430DV-T1-GE3 affect PCB layout?

The TSOP-6 package of SI3430DV-T1-GE3 uses a 3.05 mm × 2.85 mm footprint with pins 1–2–5–6 as drain and pin 4 as source - requiring separate thermal and signal routing. The exposed drain pad must be soldered to a large copper area (≥1 in²) for thermal performance; inadequate copper causes junction overheating even within rated I_D. SI3430DV-T1-GE3 land pattern follows Vishay document 72610.

SI3430DV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 6.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.14W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3430DV-T1-GE3 FAQ

1.How can I place an order for SI3430DV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3430DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3430DV-T1-GE3 reliable?

The price and inventory of SI3430DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3430DV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3430DV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3430DV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3430DV-T1-GE3?

SI3430DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3430DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3430DV-T1-GE3?

For technical support, including SI3430DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3430DV-T1-GE3 requirements.

6.How does Aetrix verify that SI3430DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3430DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3430DV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3430DV-T1-GE3?

All SI3430DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3430DV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3430DV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3430DV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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