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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3433CDV-T1-BE3

Name: SI3433CDV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3433CDV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3433CDV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3433CDV-T1-BE3.pdf

Description:: P-CHANNEL 20-V (D-S) MOSFET

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Product details

Overview

SI3433CDV-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained portable electronics. It features -20 V drain-source voltage rating, 0.038 Ω maximum R_DS(on) at V_GS = -4.5 V, -6 A continuous drain current (T_C = 25 °C), and TSOP-6 surface-mount package - enabling compact DC-DC power path control in notebook power rails.

For engineers reviewing the SI3433CDV-T1-BE3 datasheet, SI3433CDV-T1-BE3 pinout, SI3433CDV-T1-BE3 application, or SI3433CDV-T1-BE3 equivalent, key selection criteria include low gate threshold (-0.4 to -1.0 V), fast switching (t_d(off) ≤ 75 ns), integrated body diode performance (V_SD = -0.8 to -1.2 V @ -4.2 A), thermal resistance (R_thJA ≤ 80 °C/W), and Pb-free/halogen-free compliance per Vishay S09-0387-Rev. B.

Technical Context

This device operates as a single P-channel logic-level MOSFET with trench-based silicon architecture optimized for low-voltage gate drive compatibility. Its gate threshold voltage range (-0.4 to -1.0 V) enables direct interfacing with 1.8 V, 2.5 V, and 3.3 V microcontroller GPIOs without level-shifting circuitry.

The TSOP-6 package integrates four drain terminals (pins 1, 2, 5, 6), one source (pin 4), and one gate (pin 3), supporting high-current conduction while minimizing parasitic inductance. Thermal design leverages junction-to-foot (R_thJF ≤ 38 °C/W) and junction-to-ambient (R_thJA ≤ 80 °C/W) paths for stable operation up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for 3.3 V–5 V system rail protection
R_DS(on) max @ V_GS = -4.5 V	0.038 Ω - Enables <100 mW conduction loss at 5.2 A continuous load
I_D continuous (T_C = 25 °C)	-6 A - Supports high-side load switch applications with minimal heatsinking
Q_g typ. @ V_GS = -4.5 V	18 nC - Low gate charge reduces driver power and switching transition time
V_GS(th)	-0.4 to -1.0 V - Ensures reliable turn-on with standard logic-level outputs
t_d(off) max	75 ns - Supports >5 MHz PWM switching in synchronous buck or OR-ing circuits
V_SD @ I_S = -4.2 A	-0.8 to -1.2 V - Limits reverse recovery energy and forward drop in body-diode conduction

Pinout & Package

TSOP-6 (JEDEC MO-193C) surface-mount package: 3.05 mm × 2.85 mm × 1.0 mm profile with exposed drain pad for thermal enhancement. Pin 1–2–5–6 are internally connected to drain; pin 4 is source; pin 3 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-current output node; electrically tied to internal die drain metallization and exposed thermal pad
3	Gate (G)	Control input requiring ≤18 nC charge for full enhancement; compatible with 1.8 V logic
4	Source (S)	Reference node for gate drive; connects to system ground or negative rail in high-side configuration

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers 30% lower R_DS(on) vs. planar P-channel MOSFETs at same die size and voltage rating
Logic-level gate drive	Turns on fully with -1.8 V V_GS, eliminating need for gate driver ICs in battery-powered systems
Low Q_gd/Q_gs ratio (4.8/2.1 nC)	Improves switching robustness by reducing Miller effect-induced shoot-through risk
Integrated body diode with t_rr ≤ 70 ns	Enables use in synchronous rectification and OR-ing applications without external Schottky
Pb-free and halogen-free (IEC 61249-2-21)	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profiles up to 260 °C peak

Applications

Battery Protection Circuit	Notebook Power Rail Switching
Use Scenario: Isolating main Li-ion battery from system during overvoltage or short-circuit events. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path with fast fault response. Use Value: R_DS(on) ≤ 0.038 Ω limits voltage drop to <200 mV at 5 A, preserving battery runtime and thermal margin.	Use Scenario: Enabling/disabling 3.3 V or 5 V subsystems (e.g., USB ports, display backlight) based on OS power state. IC Role / Device Role / Timing Role: Logic-controlled P-channel switch placed between regulator output and load. Use Value: -0.4 V V_GS(th) ensures clean turn-on with 3.3 V GPIO; t_f ≤ 30 ns prevents supply rail droop during hot-plug transitions.
USB Port Power Control	Industrial Sensor Node Power Gating
Use Scenario: Implementing USB BC1.2 compliant charging port power enable with overcurrent protection interface. IC Role / Device Role / Timing Role: Low-side or high-side switch in USB VBUS path controlled by USB controller. Use Value: Q_g = 18 nC allows full switching within 1 µs using standard 18 Ω pull-up/pull-down resistors - meeting USB enumeration timing.	Use Scenario: Power gating wireless sensor modules (BLE/Zigbee) during sleep cycles to extend battery life beyond 10 years. IC Role / Device Role / Timing Role: Ultra-low leakage (I_DSS ≤ -1 µA @ -20 V) switch isolating sensor supply from MCU domain. Use Value: -10 µA I_DSS at 85 °C ensures <1 µA total system sleep current - critical for coin-cell operation.

Battery Protection Circuit

Notebook Power Rail Switching

Use Scenario: Isolating main Li-ion battery from system during overvoltage or short-circuit events.

IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path with fast fault response.

Use Value: R_DS(on) ≤ 0.038 Ω limits voltage drop to <200 mV at 5 A, preserving battery runtime and thermal margin.

Use Scenario: Enabling/disabling 3.3 V or 5 V subsystems (e.g., USB ports, display backlight) based on OS power state.

IC Role / Device Role / Timing Role: Logic-controlled P-channel switch placed between regulator output and load.

Use Value: -0.4 V V_GS(th) ensures clean turn-on with 3.3 V GPIO; t_f ≤ 30 ns prevents supply rail droop during hot-plug transitions.

USB Port Power Control

Industrial Sensor Node Power Gating

Use Scenario: Implementing USB BC1.2 compliant charging port power enable with overcurrent protection interface.

IC Role / Device Role / Timing Role: Low-side or high-side switch in USB VBUS path controlled by USB controller.

Use Value: Q_g = 18 nC allows full switching within 1 µs using standard 18 Ω pull-up/pull-down resistors - meeting USB enumeration timing.

Use Scenario: Power gating wireless sensor modules (BLE/Zigbee) during sleep cycles to extend battery life beyond 10 years.

IC Role / Device Role / Timing Role: Ultra-low leakage (I_DSS ≤ -1 µA @ -20 V) switch isolating sensor supply from MCU domain.

Use Value: -10 µA I_DSS at 85 °C ensures <1 µA total system sleep current - critical for coin-cell operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3431DV-T1-BE3	R_DS(on) = 0.052 Ω @ -4.5 V; higher threshold (-0.6 to -1.2 V); same TSOP-6 footprint	Lower current capability (-4.5 A vs. -6 A); suitable where thermal budget permits higher on-resistance	Select when lower gate charge (13 nC) is prioritized over conduction loss reduction
DMN2023LFG-7	R_DS(on) = 0.042 Ω @ -4.5 V; different pinout (G-S-D sequence); 2.0 mm × 2.0 mm DFN package	Requires PCB layout change; better thermal resistance (R_thJA = 65 °C/W) but no exposed drain pad	Choose for improved thermal performance in thermally constrained layouts where footprint revision is acceptable

Compared with SI3433CDV-T1-BE3, Si3431DV-T1-BE3 trades 10% higher R_DS(on) for 28% lower Q_g, while DMN2023LFG-7 offers tighter thermal resistance but demands board redesign - making SI3433CDV-T1-BE3 optimal for cost-sensitive, space-limited notebook and portable designs requiring best-in-class conduction efficiency.

Availability

SI3433CDV-T1-BE3 is available at Aetrix Electronics and suitable for notebook power management, battery protection circuits, USB port control, and industrial sensor node power gating requiring stable component supply across multi-year production cycles.

Supply support for SI3433CDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for computing and portable electronics.

The Si3433CDV series belongs to Vishay's TrenchFET® logic-level P-channel MOSFET product line, engineered specifically for low-voltage load switching in battery-powered and space-constrained applications where gate drive simplicity and conduction loss minimization are critical.

FAQ

What is the maximum continuous drain current rating for SI3433CDV-T1-BE3 at 70 °C case temperature?

The SI3433CDV-T1-BE3 supports -6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" × 1" FR4) and accounts for thermal derating above 25 °C case temperature - confirming suitability for sustained high-current load switching without forced air cooling.

Does SI3433CDV-T1-BE3 support 1.8 V logic-level gate drive?

Yes, SI3433CDV-T1-BE3 is fully compatible with 1.8 V logic-level gate drive due to its guaranteed V_GS(th) range of -0.4 V to -1.0 V and R_DS(on) = 0.060 Ω at V_GS = -1.8 V. This enables direct connection to 1.8 V microcontrollers without level shifters, verified under TJ = 25 °C test conditions in the official Vishay datasheet S09-0387-Rev. B.

What is the thermal resistance from junction to ambient for SI3433CDV-T1-BE3 under standard mounting conditions?

The SI3433CDV-T1-BE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 80 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per note b in the Thermal Resistance Ratings table. This value applies for t ≤ 5 s pulse conditions and forms the basis for steady-state thermal design in handheld and notebook applications.

Can SI3433CDV-T1-BE3 be used in reverse polarity protection circuits?

Yes, SI3433CDV-T1-BE3 is commonly deployed in reverse polarity protection due to its P-channel topology and low R_DS(on). When placed in the high-side position with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with <200 mV drop at 5 A - validated by its -20 V V_DS rating and body diode characteristics in the Vishay S09-0387-Rev. B datasheet.

Is SI3433CDV-T1-BE3 RoHS-compliant and halogen-free?

Yes, SI3433CDV-T1-BE3 is both RoHS-compliant and halogen-free, as confirmed by its ordering suffix "-BE3" (Pb-free and halogen-free) and compliance documentation referenced in Vishay's material categorization guide (www.vishay.com/doc?99912). It meets IEC 61249-2-21 and JEDEC J-STD-020 standards for lead-free reflow soldering.

SI3433CDV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Ta), 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3433CDV-T1-BE3 FAQ

1.How can I place an order for SI3433CDV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3433CDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3433CDV-T1-BE3 reliable?

The price and inventory of SI3433CDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3433CDV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3433CDV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3433CDV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3433CDV-T1-BE3?

SI3433CDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3433CDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3433CDV-T1-BE3?

For technical support, including SI3433CDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3433CDV-T1-BE3 requirements.

6.How does Aetrix verify that SI3433CDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3433CDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3433CDV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3433CDV-T1-BE3?

All SI3433CDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3433CDV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3433CDV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3433CDV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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