My Inquiry
My Account
Vishay Siliconix SI3437DV-T1-BE3
- Part No.:
- SI3437DV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3437DV-T1-BE3.pdf
- Description:
- P-CHANNEL 150-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,640
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI3437DV-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-voltage active clamp and synchronous rectification in isolated DC/DC converters. It features -150 V drain-source breakdown voltage, 0.75 Ω RDS(on) at VGS = -10 V, -1.4 A continuous drain current (TC = 25 °C), and 8 nC total gate charge - enabling efficient switching in compact power stages.
For engineers reviewing the SI3437DV-T1-BE3 datasheet, SI3437DV-T1-BE3 pinout, SI3437DV-T1-BE3 application, or SI3437DV-T1-BE3 equivalent, key selection criteria include its negative threshold voltage (-2 to -4 V), low gate charge for fast turn-on/turn-off, body diode recovery performance (trr = 60–90 ns), and TSOP-6 package thermal resistance (RthJF = 32–39 °C/W) for surface-mount power management.
Technical Context
This device operates as a high-side switch in flyback and forward converter active clamp circuits, where its -150 V VDS rating supports wide input voltage ranges up to 100 V nominal with margin. Its trench-based P-channel architecture delivers stable RDS(on) over temperature (ΔVDS/TJ = -160 mV/°C) and tight VGS(th) distribution (-2 to -4 V).
The MOSFET integrates 100 % Rg and UIS tested units, with dynamic parameters optimized for hard-switched topologies: Ciss = 510 pF, Coss = 30 pF, and Qgd/Qgs ratio of ~1.85 - supporting controlled dv/dt and reduced switching loss during clamping transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -150 V - Withstands 100 V bus transients without avalanche conduction in clamp circuits. |
| RDS(on) | 0.75 Ω @ VGS = -10 V - Enables <1.1 W conduction loss at -1.4 A, suitable for low-duty-cycle clamp operation. |
| Qg | 8 nC @ VGS = -6 V - Supports <20 ns turn-on delay with 1 Ω gate drive, minimizing overlap loss. |
| trr | 60–90 ns - Limits reverse recovery energy (Qrr = 120–180 nC) in synchronous rectifier mode. |
| RthJF | 32–39 °C/W - Delivers >2.1 W power dissipation at TC = 70 °C on standard FR4 PCB. |
| VGS(th) | -2 to -4 V - Ensures reliable turn-on with standard -5 V or -10 V gate drivers; avoids false triggering. |
| ID (pulsed) | -5 A - Handles peak clamp currents during transient overload without bondwire failure. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 1.0 mm max height, with exposed drain pad for thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts -10 V logic-level drive; 8.5–13 Ω internal gate resistance limits ringing. |
| 2 (S) | Source | Reference node for gate drive; connects to primary-side ground in active clamp topology. |
| 3 (D) | Drain | High-voltage switching node; tied to clamp capacitor and transformer primary winding. |
| 4 (D) | Drain | Parallel drain connection; reduces package inductance and improves current sharing in high-di/dt clamp events. |
| 5 (D) | Drain | Third drain terminal; enhances thermal path to PCB via exposed pad under pins 3–5. |
| 6 (S) | Source | Secondary source connection; provides low-inductance return path for body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables -150 V rating with sub-1 Ω RDS(on) in TSOP-6, avoiding larger SO-8 or TO-252 footprints. |
| 100 % Rg and UIS tested | Guarantees gate robustness against ESD and unclamped inductive switching stress in production units. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and telecom systems. |
| Low Coss / Ciss ratio | 30 pF / 510 pF = 5.9 % - Reduces Miller effect, improving gate drive efficiency in high-frequency clamp operation. |
| Body diode with trr < 100 ns | Supports bidirectional current flow during dead-time without excessive voltage overshoot or loss. |
Applications
| Active Clamp Flyback Converters | Isolated DC/DC Telecom Modules |
|---|---|
Use Scenario: High-efficiency 48 V input flyback supplying 12 V/3 A to base station control circuitry. IC Role / Device Role / Timing Role: P-channel MOSFET acting as active clamp switch across transformer primary, recycling leakage energy and limiting VDS spikes. Use Value: SI3437DV-T1-BE3's -150 V rating and 8 nC Qg enable 300 kHz operation with <5 % voltage overshoot and <0.5 W clamp loss. | Use Scenario: Compact 28 V to 5 V isolated module for optical line terminal (OLT) power sequencing. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side forward topology, replacing Schottky diodes to reduce conduction loss. Use Value: SI3437DV-T1-BE3's low RDS(on) and fast body diode (trr = 60–90 ns) improve full-load efficiency by 2.3 % vs. 40 V Schottky. |
| Industrial PLC Power Supplies | Automotive ADAS Camera Power |
Use Scenario: 24 V input DC/DC with reinforced isolation for programmable logic controller I/O modules. IC Role / Device Role / Timing Role: High-side switch in active clamp forward converter regulating ±15 V analog rails. Use Value: SI3437DV-T1-BE3's -55 to +150 °C operating range and 110 °C/W RthJA ensure stable clamp function across industrial ambient extremes. | Use Scenario: 12 V to 3.3 V isolated supply for automotive camera image sensor and ISP. IC Role / Device Role / Timing Role: Low-profile P-channel switch in compact flyback clamp stage meeting AEC-Q200 stress requirements. Use Value: SI3437DV-T1-BE3's halogen-free, RoHS-compliant TSOP-6 package fits <8 mm² board area while sustaining 105 °C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3435DV-T1-BE3 | -100 V VDS, 0.25 Ω RDS(on) @ -10 V, lower voltage rating but lower on-resistance. | Suitable only for ≤60 V input designs; insufficient for 100 V transient clamping. | Select when input voltage is capped at 48 V and lower conduction loss is prioritized over voltage margin. |
| IRF9540NPBF | TO-220 package, -100 V, 0.2 Ω RDS(on), higher Qg (44 nC), no halogen-free certification. | Requires heatsink and larger PCB area; not suitable for space-constrained telecom modules. | Choose only for legacy through-hole designs where thermal mass compensates for higher RthJA. |
Compared with Si3435DV-T1-BE3 and IRF9540NPBF, SI3437DV-T1-BE3 uniquely balances -150 V capability, TSOP-6 footprint, and 8 nC gate charge - making it the only qualified option for high-density, high-input-voltage active clamp circuits requiring RoHS/halogen-free compliance.
Availability
SI3437DV-T1-BE3 is available at Aetrix Electronics and suitable for active clamp flyback converters, isolated telecom DC/DC modules, industrial PLC power supplies, and automotive ADAS camera power systems requiring stable component supply and long-term lifecycle support.
Supply support for SI3437DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si3437DV belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered specifically for high-voltage active clamp, synchronous rectification, and high-side switching in space-constrained isolated power supplies.
FAQ
What is the maximum continuous drain current for SI3437DV-T1-BE3 at 70 °C case temperature?
The maximum continuous drain current for SI3437DV-T1-BE3 is -1.1 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal constraints in surface-mount operation on FR4 PCBs, and must be verified against actual board layout and airflow conditions in the final design using SI3437DV-T1-BE3.
Does SI3437DV-T1-BE3 support gate drive from standard -10 V logic-level controllers?
Yes, SI3437DV-T1-BE3 has a gate-threshold voltage range of -2 to -4 V and is fully enhanced at VGS = -10 V, delivering its rated 0.75 Ω RDS(on). It is compatible with common isolated gate drivers such as Silicon Labs Si823x or TI UCC5350, and requires no level-shifting circuitry when used with -10 V referenced control signals in SI3437DV-T1-BE3-based clamp designs.
What is the thermal resistance from junction to foot (RthJF) for SI3437DV-T1-BE3, and why does it matter?
SI3437DV-T1-BE3 has a typical RthJF of 32 °C/W (max 39 °C/W), measured from junction to the exposed drain pad. This parameter directly determines how much power can be dissipated without exceeding TJ(max) = 150 °C when the drain pad is soldered to a thermal pad on the PCB - critical for predicting safe operating area in SI3437DV-T1-BE3 active clamp implementations.
Can SI3437DV-T1-BE3 be used as a synchronous rectifier in forward converters?
Yes, SI3437DV-T1-BE3 is qualified for synchronous rectification in forward converters due to its fast body diode (trr = 60–90 ns), low VSD (-0.8 to -1.2 V), and ability to conduct -2.6 A continuously in source-drain direction. Its P-channel configuration simplifies gate drive timing relative to N-channel alternatives, especially in secondary-side high-side placement within SI3437DV-T1-BE3-based designs.
Is SI3437DV-T1-BE3 halogen-free and RoHS-compliant?
Yes, SI3437DV-T1-BE3 is certified halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as confirmed in the Features section of the official Vishay datasheet (Document Number: 73899). This makes SI3437DV-T1-BE3 suitable for environmentally regulated applications including telecom infrastructure and industrial automation equipment.
SI3437DV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta), 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 510 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3437DV-T1-BE3 FAQ
1.How can I place an order for SI3437DV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3437DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3437DV-T1-BE3 reliable?
The price and inventory of SI3437DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3437DV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3437DV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3437DV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3437DV-T1-BE3?
SI3437DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3437DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3437DV-T1-BE3?
For technical support, including SI3437DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3437DV-T1-BE3 requirements.
6.How does Aetrix verify that SI3437DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3437DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3437DV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3437DV-T1-BE3?
All SI3437DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3437DV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3437DV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3437DV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3437DV-T1-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
