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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3438DV-T1-E3

Name: SI3438DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3438DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3438DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3438DV-T1-E3.pdf

Description:: MOSFET N-CH 40V 7.4A 6TSOP

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Product details

Overview

SI3438DV-T1-E3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.0355 Ω at V_GS = 10 V, Q_g = 5.3 nC (at 4.5 V), and continuous drain current of 7.4 A at T_C = 25 °C. It serves as a high-efficiency synchronous rectifier or main switch in compact DC/DC converters.

For engineers reviewing the SI3438DV-T1-E3 datasheet, SI3438DV-T1-E3 pinout, SI3438DV-T1-E3 application, or SI3438DV-T1-E3 equivalent, key selection criteria include low gate charge for fast switching in 4.5 V–10 V drive systems, thermally robust TSOP-6 footprint, and verified body diode recovery (t_rr = 19 ns) for hard-switched topologies.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (V_GS(th) = 1.4–3.0 V) enables reliable enhancement-mode operation with standard logic-level drivers, while its C_iss = 640 pF and C_rss = 41 pF support stable gate control under moderate dv/dt conditions.

The device integrates a co-packaged source-drain body diode with V_SD = 0.78 V (typ.) at I_S = 1.7 A and Q_rr = 14 nC, making it suitable for freewheeling paths where reverse recovery performance impacts efficiency and EMI. Thermal resistance R_thJA = 62.5 °C/W (max) reflects its surface-mount thermal design on FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V input rails and transient clamping margins
R_DS(on) @ 10 V	0.0355 Ω - Enables ≤1.1 W conduction loss at 5.5 A DC load in space-constrained layouts
Q_g @ 4.5 V	5.3 nC - Supports efficient 500 kHz–1 MHz switching with <10 Ω gate driver impedance
I_D (continuous)	7.4 A @ T_C = 25 °C - Rated for sustained current in thermally anchored PCB footprints
t_rr	19 ns (typ.) - Minimizes switching loss and voltage overshoot during diode commutation
R_thJA	62.5 °C/W (max) - Defines thermal derating slope for ambient-limited operation on 1" × 1" FR4
V_GS(th)	1.4–3.0 V - Ensures turn-on with 3.3 V or 5 V microcontroller GPIO without level-shifting

Pinout & Package

TSOP-6 package: 2.95–3.10 mm × 2.70–2.98 mm × 0.91–1.10 mm height, lead (Pb)-free and halogen-free per JEDEC MO-193C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; electrically tied internally; requires thermal pad connection to ground plane
3	Gate (G)	Control input; low capacitance (C_iss = 640 pF) enables fast edge rates with minimal driver effort
4	Source (S)	Power return path and reference for gate drive; connects directly to PCB ground pour for low-inductance loop

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency DC/DC efficiency
Logic-level gate drive	Operates fully enhanced from 4.5 V supply, eliminating need for external gate boosters in 5 V systems
Optimized body diode	Low Q_rr (14 nC) and fast t_rr (19 ns) reduce switching loss and ringing in buck/flyback freewheeling
Thermally enhanced TSOP-6	Exposed drain pads on pins 1/2/5/6 enable direct heat transfer to PCB copper, improving power density
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements

Applications

Point-of-Load (POL) Converter	USB-C Power Delivery Sink
Use Scenario: High-density 12 V-to-3.3 V/5 V conversion delivering up to 15 W in server VRMs or telecom modules. IC Role / Device Role: Synchronous rectifier in secondary-side synchronous buck stage. Use Value: Low R_DS(on) and Q_g minimize conduction + switching losses, enabling >94% efficiency at 1 MHz.	Use Scenario: 20 V input USB PD 3.0 sink circuit regulating 9 V/15 V/20 V outputs for laptops and monitors. IC Role / Device Role: Primary-side high-side switch in buck controller-based adapter front-end. Use Value: 40 V rating accommodates 20 V input + 20 % transient margin; logic-level gate supports direct MCU control.
Industrial Motor Driver Half-Bridge	Automotive Body Control Module (BCM)
Use Scenario: 24 V brushed DC motor control in HVAC actuators or seat adjusters with PWM frequencies up to 50 kHz. IC Role / Device Role: Low-side switch in half-bridge configuration driving inductive loads. Use Value: Robust SOA supports 20 A pulsed current (I_DM) and 150 °C junction operation in sealed enclosures.	Use Scenario: Load switching for LED lighting, solenoids, and relays in 12 V automotive BCMs with strict EMC limits. IC Role / Device Role: High-side load switch with integrated protection and diagnostic feedback. Use Value: Fast t_rr and low C_oss suppress voltage spikes during inductive turn-off, reducing snubber component count.

Point-of-Load (POL) Converter

USB-C Power Delivery Sink

Use Scenario: High-density 12 V-to-3.3 V/5 V conversion delivering up to 15 W in server VRMs or telecom modules.

IC Role / Device Role: Synchronous rectifier in secondary-side synchronous buck stage.

Use Value: Low R_DS(on) and Q_g minimize conduction + switching losses, enabling >94% efficiency at 1 MHz.

Use Scenario: 20 V input USB PD 3.0 sink circuit regulating 9 V/15 V/20 V outputs for laptops and monitors.

IC Role / Device Role: Primary-side high-side switch in buck controller-based adapter front-end.

Use Value: 40 V rating accommodates 20 V input + 20 % transient margin; logic-level gate supports direct MCU control.

Industrial Motor Driver Half-Bridge

Automotive Body Control Module (BCM)

Use Scenario: 24 V brushed DC motor control in HVAC actuators or seat adjusters with PWM frequencies up to 50 kHz.

IC Role / Device Role: Low-side switch in half-bridge configuration driving inductive loads.

Use Value: Robust SOA supports 20 A pulsed current (I_DM) and 150 °C junction operation in sealed enclosures.

Use Scenario: Load switching for LED lighting, solenoids, and relays in 12 V automotive BCMs with strict EMC limits.

IC Role / Device Role: High-side load switch with integrated protection and diagnostic feedback.

Use Value: Fast t_rr and low C_oss suppress voltage spikes during inductive turn-off, reducing snubber component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-E3	R_DS(on) = 0.022 Ω @ 10 V; higher Q_g = 11.7 nC; same TSOP-6 package	Better conduction loss but slower switching; suited for lower-frequency, higher-current designs	Select when conduction loss dominates and gate drive strength permits higher Q_g.
AO3400A	R_DS(on) = 0.028 Ω @ 10 V; Q_g = 12 nC; different pinout (G-S-D vs D-G-S); SOT-23 package	Smaller footprint but inferior thermal performance (R_thJA ≈ 150 °C/W); no exposed drain thermal path	Choose only for ultra-low-cost, low-power (<2 W) applications where layout area is critical.

Compared with Si3456DV-T1-E3 and AO3400A, SI3438DV-T1-E3 offers the optimal balance of low gate charge, proven body diode performance, and thermally efficient TSOP-6 packaging-making it preferred for mid-power DC/DC converters requiring both efficiency and reliability.

Availability

SI3438DV-T1-E3 is available at Aetrix Electronics and suitable for point-of-load converters, USB-C power delivery adapters, and industrial motor control circuits requiring stable component supply across production lifecycles.

Supply support for SI3438DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si34xx DV-series targets high-frequency, medium-power DC/DC conversion with optimized gate charge and thermal performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for SI3438DV-T1-E3 at 70 °C case temperature?

The SI3438DV-T1-E3 supports 5.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the TSOP-6 package under real-world board-level cooling conditions. The SI3438DV-T1-E3 maintains safe operation up to 150 °C junction temperature, provided PCB thermal design meets recommended land patterns.

Does SI3438DV-T1-E3 have a specified reverse recovery time for its body diode?

Yes, the SI3438DV-T1-E3 body diode has a typical reverse recovery time (t_rr) of 19 ns at I_F = 3 A, di/dt = 100 A/μs, and T_J = 25 °C. This value is measured and guaranteed per datasheet Section 1, confirming suitability for hard-switched topologies where fast diode recovery reduces switching loss and EMI. The SI3438DV-T1-E3 also specifies Q_rr = 14 nC (typ.), supporting accurate loss modeling.

Can SI3438DV-T1-E3 be driven directly by a 3.3 V microcontroller GPIO?

Yes, SI3438DV-T1-E3 has a gate threshold voltage range of 1.4–3.0 V and delivers R_DS(on) = 0.0425 Ω at V_GS = 4.5 V, ensuring full enhancement with 3.3 V logic when used in low-current or low-duty-cycle applications. For robust 7.4 A conduction, a dedicated 5 V gate driver is recommended-but the SI3438DV-T1-E3 remains functional and controllable from 3.3 V sources in many practical implementations.

What is the thermal resistance from junction to ambient for SI3438DV-T1-E3 on a standard FR4 board?

The SI3438DV-T1-E3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 62.5 °C/W when mounted on a 1" × 1" FR4 board per test condition b. This value assumes standard surface-mount assembly with soldered drain pads. The SI3438DV-T1-E3 benefits from its TSOP-6 package's exposed drain terminals, which significantly improve heat transfer compared to standard SOT-23 devices.

Is SI3438DV-T1-E3 compliant with RoHS and halogen-free standards?

Yes, SI3438DV-T1-E3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709E requirements. The "-E3" suffix explicitly denotes this compliance, and the device carries Vishay's material declaration per document #99912. SI3438DV-T1-E3 is suitable for environmentally regulated industrial and consumer applications without restriction.

SI3438DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3438DV-T1-E3 FAQ

1.How can I place an order for SI3438DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3438DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3438DV-T1-E3 reliable?

The price and inventory of SI3438DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3438DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3438DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3438DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3438DV-T1-E3?

SI3438DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3438DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3438DV-T1-E3?

For technical support, including SI3438DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3438DV-T1-E3 requirements.

6.How does Aetrix verify that SI3438DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3438DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3438DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3438DV-T1-E3?

All SI3438DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3438DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3438DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3438DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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