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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3438DV-T1-GE3

Name: SI3438DV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3438DV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3438DV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3438DV-T1-GE3.pdf

Description:: MOSFET N-CH 40V 7.4A 6TSOP

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Product details

Overview

SI3438DV-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.0355 Ω at V_GS = 10 V and 0.0425 Ω at V_GS = 4.5 V, Q_g = 5.3 nC (typ.), continuous drain current of 7.4 A (T_C = 25 °C), and optimized for high-efficiency DC/DC converter switching stages.

For engineers reviewing the SI3438DV-T1-GE3 datasheet, SI3438DV-T1-GE3 pinout, SI3438DV-T1-GE3 application, or SI3438DV-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching, thermally robust TSOP-6 footprint, 40 V V_DS rating for 24–36 V input rails, and body diode recovery performance (t_rr = 19 ns typ.) in synchronous rectification.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and controlled gate charge, enabling high-frequency operation in buck converters and load switches. Its 4.5 V gate drive compatibility supports direct interfacing with 5 V and 3.3 V logic controllers without level shifting.

The device integrates a fast-recovery body diode (Q_rr = 14 nC typ., t_rr = 19 ns) and exhibits stable R_DS(on) over temperature (±0.1%/°C typical drift), supporting reliable conduction loss prediction across -55 °C to +150 °C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports input rails up to 36 V nominal with 10 % margin for transients
R_DS(on) @ V_GS = 10 V	0.0355 Ω - Delivers ≤1.3 W conduction loss at 6 A continuous drain current
R_DS(on) @ V_GS = 4.5 V	0.0425 Ω - Enables efficient operation with standard 5 V microcontroller GPIO drive
Q_g (typ.)	5.3 nC - Reduces switching energy loss and gate driver power demand in >500 kHz designs
I_D (continuous, T_C = 25 °C)	7.4 A - Sustains full-load current in compact 1" × 1" FR4 PCB layouts without forced air
t_rr (body diode)	19 ns (typ.) - Minimizes reverse recovery loss and EMI in synchronous rectifier configurations
R_thJA (max)	62.5 °C/W - Defines thermal derating envelope for ambient-limited operation on standard PCBs

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.05 mm profile, with exposed drain pad for enhanced thermal conduction. Pin 1–2–5–6 are internally connected to drain; Pin 3 is gate; Pin 4 is source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-side switch node connection; electrically tied to exposed thermal pad for low R_thJF
3	Gate (G)	Control input requiring <5.3 nC charge for full enhancement; sensitive to ESD (±20 V max)
4	Source (S)	Power return path and reference for gate drive; ties to ground or low-side switch source

Key Features

Feature	Design Value
TrenchFET® silicon process	Enables sub-40 mΩ R_DS(on) in TSOP-6, reducing conduction loss by ≥25 % vs. planar MOSFETs at same voltage rating
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709E, suitable for consumer and industrial end-equipment
Low Q_gd/Q_gs ratio	Q_gd = 1.7 nC, Q_gs = 1.9 nC - Improves hard-switching immunity and reduces Miller-induced shoot-through risk
Guaranteed R_DS(on) at 4.5 V	0.0425 Ω max - Ensures full enhancement with 5 V logic, eliminating need for gate boosters in mid-voltage SMPS
Body diode softness factor	t_a/t_b = 13 ns / 6 ns - Limits voltage overshoot during reverse recovery, easing EMI filter design

Applications

DC/DC Buck Converter	Hot-Swap Controller
Use Scenario: Primary high-side switch in 12–24 V input, 3.3–5 V output synchronous buck regulator delivering up to 6 A. IC Role / Device Role / Timing Role: Power switching element controlling energy transfer into output inductor; operates at 300–1000 kHz PWM frequency. Use Value: Low Q_g and R_DS(on) reduce total losses to <1.5 W at full load, enabling >94 % efficiency without heatsink.	Use Scenario: Inrush current limiter and fault-isolation switch in 24 V industrial backplane power distribution. IC Role / Device Role / Timing Role: Load switch placed between input supply and downstream circuitry; driven via external gate resistor and enable logic. Use Value: 40 V V_DS rating and 7.4 A I_D support 20 A peak inrush limiting; low R_DS(on) minimizes voltage drop during steady-state operation.
USB-C Power Delivery Sink	Motor Driver Half-Bridge
Use Scenario: Input protection switch in USB-C PD 3.0 compliant 20 V/5 A sink implementation. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage blocking FET placed before PD controller and DC/DC stage. Use Value: Fast body diode recovery (t_rr = 19 ns) prevents latch-up during hot-plug events; 0.0425 Ω R_DS(on) limits dropout to <210 mV at 5 A.	Use Scenario: Low-side switch in 24 V brushed DC motor driver with PWM control and current sensing. IC Role / Device Role / Timing Role: Ground-return path switch enabling bidirectional current flow when paired with high-side counterpart. Use Value: Low gate charge enables clean 20 kHz PWM edges; SOA curve supports 20 A pulsed current for stall conditions.

DC/DC Buck Converter

Hot-Swap Controller

Use Scenario: Primary high-side switch in 12–24 V input, 3.3–5 V output synchronous buck regulator delivering up to 6 A.

IC Role / Device Role / Timing Role: Power switching element controlling energy transfer into output inductor; operates at 300–1000 kHz PWM frequency.

Use Value: Low Q_g and R_DS(on) reduce total losses to <1.5 W at full load, enabling >94 % efficiency without heatsink.

Use Scenario: Inrush current limiter and fault-isolation switch in 24 V industrial backplane power distribution.

IC Role / Device Role / Timing Role: Load switch placed between input supply and downstream circuitry; driven via external gate resistor and enable logic.

Use Value: 40 V V_DS rating and 7.4 A I_D support 20 A peak inrush limiting; low R_DS(on) minimizes voltage drop during steady-state operation.

USB-C Power Delivery Sink

Motor Driver Half-Bridge

Use Scenario: Input protection switch in USB-C PD 3.0 compliant 20 V/5 A sink implementation.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage blocking FET placed before PD controller and DC/DC stage.

Use Value: Fast body diode recovery (t_rr = 19 ns) prevents latch-up during hot-plug events; 0.0425 Ω R_DS(on) limits dropout to <210 mV at 5 A.

Use Scenario: Low-side switch in 24 V brushed DC motor driver with PWM control and current sensing.

IC Role / Device Role / Timing Role: Ground-return path switch enabling bidirectional current flow when paired with high-side counterpart.

Use Value: Low gate charge enables clean 20 kHz PWM edges; SOA curve supports 20 A pulsed current for stall conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-GE3	R_DS(on) = 0.022 Ω @ 10 V, higher Q_g = 11.7 nC, same TSOP-6 package	Better conduction loss but slower switching; suited for lower-frequency, high-current apps	Select when thermal budget dominates switching loss, e.g., <300 kHz converters
DMN3026LSD-13	30 V V_DS, R_DS(on) = 0.026 Ω @ 4.5 V, dual-N in SO-8, no integrated body diode spec	Limited to ≤24 V systems; requires external diode for synchronous rectification	Choose for cost-sensitive dual-FET layouts where 30 V rating suffices

Compared with Si3456DV-T1-GE3 and DMN3026LSD-13, the SI3438DV-T1-GE3 balances gate drive simplicity (4.5 V compatible), switching speed (5.3 nC Q_g), and 40 V robustness-making it optimal for 24 V industrial DC/DC and hot-swap designs where layout space and thermal management are constrained.

Availability

SI3438DV-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, hot-swap controllers, and USB-C power delivery systems requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SI3438DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SI3438DV-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered for high-efficiency, high-density power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current rating for SI3438DV-T1-GE3 at 70 °C case temperature?

The SI3438DV-T1-GE3 supports 5.8 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained conduction; actual usable current depends on PCB copper area, airflow, and ambient temperature. The SI3438DV-T1-GE3 datasheet specifies this value explicitly in the "Continuous drain current" row under "TC = 70 °C".

Does SI3438DV-T1-GE3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SI3438DV-T1-GE3 has a specified body diode reverse recovery time of 19 ns (typical) at I_F = 3 A, di/dt = 100 A/μs, and T_J = 25 °C. This parameter is critical for synchronous rectifier performance and EMI control. The SI3438DV-T1-GE3 datasheet lists t_rr in the "Drain-Source Body Diode Characteristics" section.

Is SI3438DV-T1-GE3 suitable for 5 V gate drive applications?

Yes, the SI3438DV-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 0.0425 Ω (max) at V_GS = 4.5 V and I_D = 4 A. Its gate threshold voltage (V_GS(th)) ranges from 1.4 V to 3.0 V, ensuring robust turn-on with standard 5 V logic. The SI3438DV-T1-GE3 supports direct interface with microcontrollers and PWM controllers without gate boosting.

What is the thermal resistance from junction to ambient (R_thJA) for SI3438DV-T1-GE3 on a 1" × 1" FR4 board?

The SI3438DV-T1-GE3 has a maximum R_thJA of 62.5 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, per note b in the Thermal Resistance Ratings table. This value assumes standard surface-mount assembly and defines the worst-case thermal path for ambient-limited designs. The SI3438DV-T1-GE3 datasheet confirms this condition in the "Notes" section on page 1.

What marking code identifies SI3438DV-T1-GE3 on the device package?

The SI3438DV-T1-GE3 is marked with the code "AW" on its top surface, as stated in the "FEATURES" section of the Vishay datasheet. This 2-character laser marking distinguishes it within the Si34xxDV series and aligns with Vishay's standardized part identification scheme. The SI3438DV-T1-GE3 marking is verified in the official document S09-0766-Rev. B.

SI3438DV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3438DV-T1-GE3 FAQ

1.How can I place an order for SI3438DV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3438DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3438DV-T1-GE3 reliable?

The price and inventory of SI3438DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3438DV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3438DV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3438DV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3438DV-T1-GE3?

SI3438DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3438DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3438DV-T1-GE3?

For technical support, including SI3438DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3438DV-T1-GE3 requirements.

6.How does Aetrix verify that SI3438DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3438DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3438DV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3438DV-T1-GE3?

All SI3438DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3438DV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3438DV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3438DV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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