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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3440ADV-T1-BE3

Name: SI3440ADV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3440ADV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3440ADV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3440ADV-T1-BE3.pdf

Description:: N-CHANNEL 150-V (D-S) MOSFET

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Product details

Overview

SI3440ADV-T1-BE3 from Vishay Siliconix is an N-channel 150 V (D-S) MOSFET in TSOP-6 package, rated for 2.2 A continuous drain current at T_C = 25 °C, with R_DS(on) of 0.380 Ω at V_GS = 10 V and 0.432 Ω at V_GS = 4.5 V, used as a PD switch and load switch in compact DC/DC and boost converter designs.

For engineers reviewing the SI3440ADV-T1-BE3 datasheet, SI3440ADV-T1-BE3 pinout, SI3440ADV-T1-BE3 application, or SI3440ADV-T1-BE3 equivalent, key selection criteria include its 150 V V_DS, low gate charge (1.65 nC typ. at 4.5 V), 100 % R_g tested reliability, and suitability for space-constrained power management where thermal resistance to ambient (R_thJA ≤ 62.5 °C/W) and body diode recovery (t_rr = 44–66 ns) are critical.

Technical Context

This MOSFET employs a ThunderFET® process optimized for high-voltage switching efficiency and robust avalanche capability (E_AS = 0.45 mJ). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard logic-level drivers, while the 3.5 Ω max gate resistance supports controlled switching transitions.

The device integrates a source-drain body diode with V_SD = 0.85–1.2 V at I_S = 1.3 A and Q_rr = 53–80 nC, enabling synchronous rectification support in flyback and boost topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V PoE and industrial input rails.
R_DS(on) @ 10 V	0.380 Ω max - Enables <2.2 A continuous conduction with ≤0.9 W I²R loss at full rated current.
Q_g @ 4.5 V	1.65 nC typ. - Reduces gate drive power and enables efficient operation with low-voltage microcontroller GPIOs.
I_D (T_C = 25 °C)	2.2 A - Supports sustained load switching in thermally managed PCB layouts using 1" × 1" FR4 copper area.
t_rr	44–66 ns - Limits reverse recovery losses during hard-switched transitions in DC/DC converters.
R_thJA	62.5 °C/W max - Defines worst-case junction-to-ambient thermal rise under still-air conditions on standard PCB mounting.
V_GS(th)	2–4 V - Ensures predictable turn-on with 3.3 V or 5 V logic-compatible gate drive without level-shifting.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 0.5 mm max height, designed for automated assembly and thermal relief via exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Common high-side power path connection; electrically tied internally; requires thermal pad connection to PCB ground plane for heat dissipation.
3	Gate (G)	Control terminal; accepts 0–20 V gate-source swing; 100 % R_g tested for consistent switching timing.
5	Source (S)	Power return node; forms cathode of integrated body diode; referenced to system ground in low-side switch configurations.

Key Features

Feature	Design Value
ThunderFET® technology	Enables higher V_DS rating and lower R_DS(on) vs. standard Trench MOSFETs in same package size.
100 % R_g tested	Guarantees gate resistance between 0.7–7 Ω, ensuring predictable turn-on/turn-off timing across production lots.
Low Q_gd/Q_gs ratio	0.7 nC / 0.5 nC = 1.4 - Improves immunity to Miller-induced shoot-through in half-bridge configurations.
Robust avalanche rating	IAS = 3 A, EAS = 0.45 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912.

Applications

DC/DC Converters	LED Backlighting
Use Scenario: Step-down regulation in point-of-load supplies for FPGA or ASIC core voltages. IC Role / Device Role / Timing Role: Synchronous high-side switch controlling power delivery during PWM cycles. Use Value: Low R_DS(on) and fast t_r/t_f reduce conduction and switching losses, improving efficiency above 85 % at 1 MHz operation.	Use Scenario: Constant-current dimming control for LCD panel edge-lit LED strings. IC Role / Device Role / Timing Role: Load switch enabling/disabling LED current paths under microcontroller command. Use Value: 2.2 A rating supports multi-string parallel drive; low V_SD minimizes forward drop in body-diode fallback mode.
PoE Power Delivery	Industrial Load Switching
Use Scenario: 802.3af/at PD interface for powered devices such as IP cameras or VoIP phones. IC Role / Device Role / Timing Role: Primary DC input switch isolating upstream PSE during fault detection and classification. Use Value: 150 V V_DS accommodates PoE voltage surges up to 57 V + transients; avalanche rating handles cable discharge events.	Use Scenario: Controlled hot-swap enable for 24 V/48 V industrial sensors and actuators. IC Role / Device Role / Timing Role: Inrush-limited power rail switch protecting upstream regulators and downstream loads. Use Value: Gate threshold range allows direct MCU GPIO control; low Q_g enables soft-start via PWM slew-rate limiting.

DC/DC Converters

LED Backlighting

Use Scenario: Step-down regulation in point-of-load supplies for FPGA or ASIC core voltages.

IC Role / Device Role / Timing Role: Synchronous high-side switch controlling power delivery during PWM cycles.

Use Value: Low R_DS(on) and fast t_r/t_f reduce conduction and switching losses, improving efficiency above 85 % at 1 MHz operation.

Use Scenario: Constant-current dimming control for LCD panel edge-lit LED strings.

IC Role / Device Role / Timing Role: Load switch enabling/disabling LED current paths under microcontroller command.

Use Value: 2.2 A rating supports multi-string parallel drive; low V_SD minimizes forward drop in body-diode fallback mode.

PoE Power Delivery

Industrial Load Switching

Use Scenario: 802.3af/at PD interface for powered devices such as IP cameras or VoIP phones.

IC Role / Device Role / Timing Role: Primary DC input switch isolating upstream PSE during fault detection and classification.

Use Value: 150 V V_DS accommodates PoE voltage surges up to 57 V + transients; avalanche rating handles cable discharge events.

Use Scenario: Controlled hot-swap enable for 24 V/48 V industrial sensors and actuators.

IC Role / Device Role / Timing Role: Inrush-limited power rail switch protecting upstream regulators and downstream loads.

Use Value: Gate threshold range allows direct MCU GPIO control; low Q_g enables soft-start via PWM slew-rate limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-GE3	Same TSOP-6 package, 100 V V_DS, R_DS(on) = 0.22 Ω @ 4.5 V, Q_g = 1.4 nC	Better efficiency below 48 V input; insufficient for 150 V PoE surge margin	Select when operating strictly ≤60 V and prioritizing lowest R_DS(on).
DMN3026LFG-7	TSOP-6, 30 V V_DS, R_DS(on) = 0.032 Ω @ 4.5 V, Q_g = 3.2 nC	Higher gate charge and lower voltage rating limit use to low-voltage logic loads only	Choose for battery-powered 3.3/5 V systems requiring ultra-low on-resistance.

Compared with Si3456DV-T1-GE3 and DMN3026LFG-7, SI3440ADV-T1-BE3 uniquely balances 150 V ruggedness, moderate R_DS(on), and low Q_g-making it optimal for PoE PD switches and industrial DC/DC where voltage headroom and gate drive simplicity are jointly critical.

Availability

SI3440ADV-T1-BE3 is available at Aetrix Electronics and suitable for DC/DC converters, LED backlighting, and PoE power delivery requiring stable component supply across extended production lifecycles.

Supply support for SI3440ADV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power management solutions.

The ThunderFET® product line targets high-voltage, medium-current switching applications where ruggedness, low gate charge, and thermal performance in small packages are essential-especially in PoE, industrial power, and lighting systems.

FAQ

What is the maximum continuous drain current rating for SI3440ADV-T1-BE3 at 70 °C case temperature?

The SI3440ADV-T1-BE3 supports 1.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package under elevated ambient or board-constrained cooling conditions. Engineers must verify PCB copper area and airflow to sustain this current without exceeding T_J = 150 °C. The SI3440ADV-T1-BE3 datasheet confirms this value under steady-state conditions with proper thermal management.

Does SI3440ADV-T1-BE3 have a built-in body diode, and what are its key parameters?

Yes, SI3440ADV-T1-BE3 integrates a source-drain body diode with V_SD = 0.85–1.2 V at I_S = 1.3 A and reverse recovery time t_rr = 44–66 ns at T_J = 25 °C. Its Q_rr is 53–80 nC, supporting quasi-resonant and synchronous rectification modes. These values are measured per the datasheet's Drain-Source Body Diode Characteristics section and apply directly to SI3440ADV-T1-BE3 in standard mounting conditions.

Is SI3440ADV-T1-BE3 suitable for use in a 48 V PoE-powered device?

Yes, SI3440ADV-T1-BE3 is explicitly qualified for PoE power delivery (PD) switch applications, with 150 V V_DS providing margin against 802.3at transient surges (up to ~57 V + 30 % overshoot). Its 3 A single-pulse avalanche current (I_AS) and 0.45 mJ E_AS withstand cable discharge events. The SI3440ADV-T1-BE3 datasheet lists "PD switch" as a primary application, confirming design intent and validation.

What is the gate-source voltage range supported by SI3440ADV-T1-BE3?

SI3440ADV-T1-BE3 supports ±20 V gate-source voltage (V_GS), per its Absolute Maximum Ratings. Operation between –20 V and +20 V ensures safe turn-off and robust noise immunity. The gate threshold voltage (V_GS(th)) is 2–4 V, enabling reliable enhancement-mode turn-on with 3.3 V or 5 V logic. All V_GS limits and functional behavior are documented for SI3440ADV-T1-BE3 in the official Vishay datasheet.

How does the thermal resistance of SI3440ADV-T1-BE3 compare between junction-to-case and junction-to-ambient?

SI3440ADV-T1-BE3 has R_thJF (junction-to-foot/drain) of 28–35 °C/W (steady state) and R_thJA (junction-to-ambient) of 50–62.5 °C/W (t ≤ 10 s). The lower R_thJF indicates superior heat transfer when the drain pad is soldered to a large copper pour, while R_thJA reflects worst-case natural convection on minimal PCB area. These values are measured per the datasheet's Thermal Resistance Ratings table and apply specifically to SI3440ADV-T1-BE3 in TSOP-6 configuration.

SI3440ADV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta), 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 80 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3440ADV-T1-BE3 FAQ

1.How can I place an order for SI3440ADV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3440ADV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3440ADV-T1-BE3 reliable?

The price and inventory of SI3440ADV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3440ADV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3440ADV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3440ADV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3440ADV-T1-BE3?

SI3440ADV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3440ADV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3440ADV-T1-BE3?

For technical support, including SI3440ADV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3440ADV-T1-BE3 requirements.

6.How does Aetrix verify that SI3440ADV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3440ADV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3440ADV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3440ADV-T1-BE3?

All SI3440ADV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3440ADV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3440ADV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3440ADV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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