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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3440DV-T1-E3

Name: SI3440DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3440DV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3440DV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3440DV-T1-E3.pdf

Description:: MOSFET N-CH 150V 1.2A 6TSOP

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Product details

Overview

SI3440DV-T1-E3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® power MOSFET in TSOP-6 package, optimized for PWM switching in low-power DC/DC converters. It delivers R_DS(on) = 0.375 Ω at V_GS = 10 V, Q_g = 5.4 nC, and 1.5 A continuous drain current, serving as a primary-side switch in isolated flyback and buck-derived topologies.

For engineers reviewing the SI3440DV-T1-E3 datasheet, SI3440DV-T1-E3 pinout, SI3440DV-T1-E3 application, or SI3440DV-T1-E3 equivalent, key selection criteria include its 150 V V_DS, low gate charge for high-frequency operation, thermal resistance (R_thJA = 90 °C/W), and verified 100% R_g testing - all critical for compact, thermally constrained power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching transients. Its gate threshold voltage (V_GS(th) = 2–4 V) enables reliable turn-on with standard 5 V or 3.3 V logic-level drivers, while its low Q_gd (1.9 nC) minimizes Miller-induced switching losses in hard-switched topologies.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 1.7 A and t_rr = 40–60 ns, supporting synchronous rectification and freewheeling functions. Its safe operating area (SOA) is defined up to 150 V and 6 A pulsed, with derating above 25 °C per R_thJA = 90 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports input voltages up to 100 V DC with margin for transient spikes in offline or industrial DC/DC designs
R_DS(on) max @ 10 V	0.375 Ω - limits conduction loss to ≤0.84 W at 1.5 A, enabling thermally viable operation on 1" × 1" FR4 without heatsink
Q_g typ	5.4 nC - enables efficient 500 kHz–1 MHz PWM switching with moderate gate driver strength (e.g., TC4427)
I_D continuous	1.5 A @ T_J = 175 °C - defines maximum steady-state load current under worst-case junction temperature conditions
t_r/t_f	10–15 ns / 15–25 ns - ensures minimal overlap loss during hard-switched transitions in flyback or forward converters
V_GS(th)	2–4 V - guarantees robust turn-on with 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers
E_AS	0.8 mJ - quantifies single-pulse avalanche energy handling capability for inductive load interruption protection

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 1.0 mm height. Optimized for automated assembly and thermal performance via exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-side switching node; electrically and thermally connected to exposed drain pad - must be routed to power plane for thermal dissipation
3	Gate (G)	Control input; requires low-inductance gate loop and series resistor (typically 5–22 Ω) to damp ringing and control dV/dt
4	Source (S)	Reference node for gate drive and current sensing; tied to power ground in low-side configurations or floating in high-side setups

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling higher power density in TSOP-6 footprint
PWM-optimized switching	Low Q_gd/Q_g ratio (≈35%) reduces Miller plateau duration, improving controllability at >500 kHz frequencies
100% R_g tested	Ensures gate resistance falls within 4–15 Ω range, guaranteeing predictable turn-on/turn-off timing across production lots
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for consumer and industrial end-equipment

Applications

AC-DC Adapter Primary Switch	USB PD Power Delivery Module
Use Scenario: 5–20 W isolated flyback converter in wall adapters powering smartphones and IoT devices. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from AC input to secondary winding. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >85% efficiency at light loads and meeting CoC Tier 2 requirements.	Use Scenario: Compact 18–30 W USB-C PD power module with integrated controller and transformer. IC Role / Device Role / Timing Role: High-voltage switching element synchronized to controller's PWM signal for precise duty-cycle regulation. Use Value: Fast tr/tf and stable V_GS(th) ensure accurate pulse-width fidelity across temperature, maintaining tight output voltage regulation.
Industrial Sensor Power Supply	Medical Diagnostic Equipment DC/DC Stage
Use Scenario: 12 V input to 3.3/5 V isolated DC/DC converter powering analog front-end sensors in PLC modules. IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback topology delivering reinforced isolation per IEC 61000-4-5. Use Value: 150 V V_DS withstands 100 V surges; E_AS = 0.8 mJ provides single-event ruggedness against inductive kickback from relay coils.	Use Scenario: Auxiliary 24 V to ±15 V isolated supply for op-amp biasing and ADC reference in portable ultrasound units. IC Role / Device Role / Timing Role: Low-noise, low-EMI primary switch operating at fixed 400 kHz to avoid sensitive RF bands. Use Value: Low Q_gd and controlled dV/dt minimize common-mode noise coupling into analog signal paths, preserving SNR.

AC-DC Adapter Primary Switch

USB PD Power Delivery Module

Use Scenario: 5–20 W isolated flyback converter in wall adapters powering smartphones and IoT devices.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from AC input to secondary winding.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >85% efficiency at light loads and meeting CoC Tier 2 requirements.

Use Scenario: Compact 18–30 W USB-C PD power module with integrated controller and transformer.

IC Role / Device Role / Timing Role: High-voltage switching element synchronized to controller's PWM signal for precise duty-cycle regulation.

Use Value: Fast tr/tf and stable V_GS(th) ensure accurate pulse-width fidelity across temperature, maintaining tight output voltage regulation.

Industrial Sensor Power Supply

Medical Diagnostic Equipment DC/DC Stage

Use Scenario: 12 V input to 3.3/5 V isolated DC/DC converter powering analog front-end sensors in PLC modules.

IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback topology delivering reinforced isolation per IEC 61000-4-5.

Use Value: 150 V V_DS withstands 100 V surges; E_AS = 0.8 mJ provides single-event ruggedness against inductive kickback from relay coils.

Use Scenario: Auxiliary 24 V to ±15 V isolated supply for op-amp biasing and ADC reference in portable ultrasound units.

IC Role / Device Role / Timing Role: Low-noise, low-EMI primary switch operating at fixed 400 kHz to avoid sensitive RF bands.

Use Value: Low Q_gd and controlled dV/dt minimize common-mode noise coupling into analog signal paths, preserving SNR.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-E3	R_DS(on) = 0.22 Ω @ 10 V; higher I_D = 2.5 A; same TSOP-6 package	Better conduction efficiency at >1.5 A loads; slightly higher Q_g (7.2 nC)	Select when thermal headroom is limited and peak current exceeds 1.5 A.
DMN3028LFG-7	30 V V_DS; R_DS(on) = 0.028 Ω @ 10 V; SOT-23-6 package; not voltage-compatible	Only suitable for low-voltage (<36 V) DC/DC; incompatible with 100 V input designs	Use only in sub-36 V systems where ultra-low R_DS(on) outweighs voltage limitation.

Compared with Si3456DV-T1-E3 and DMN3028LFG-7, the SI3440DV-T1-E3 offers optimal balance of 150 V rating, 0.375 Ω on-resistance, and 5.4 nC gate charge for space-constrained 5–20 W flyback converters - making it uniquely suited where voltage margin and switching speed are both critical.

Availability

SI3440DV-T1-E3 is available at Aetrix Electronics and suitable for AC-DC adapters, USB PD modules, and industrial sensor power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI3440DV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SI3440DV-T1-E3 belongs to Vishay's TrenchFET® Gen III family, designed specifically for high-efficiency, high-frequency DC/DC conversion in space-limited power supplies - balancing voltage capability, switching speed, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SI3440DV-T1-E3 at 85 °C ambient?

The SI3440DV-T1-E3 supports 0.8 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package with R_thJA = 90 °C/W. For sustained 1.5 A operation, board-level thermal design (e.g., copper pour, airflow) must maintain T_A ≤ 25 °C or use active cooling.

Does SI3440DV-T1-E3 require a gate driver IC, or can it be driven directly by a microcontroller?

The SI3440DV-T1-E3 can be driven directly by a 3.3 V or 5 V microcontroller GPIO if the application operates below 100 kHz and tolerates slower switching. However, for PWM frequencies ≥200 kHz or to ensure clean turn-on/turn-off with minimal ringing, a dedicated gate driver (e.g., TC4427) is recommended due to its 5.4 nC total gate charge and 4–15 Ω gate resistance.

Is SI3440DV-T1-E3 suitable for use in automotive applications?

The SI3440DV-T1-E3 is not AEC-Q101 qualified and lacks automotive-grade qualification documentation. While its -55 °C to +150 °C operating temperature range meets some automotive ambient requirements, Vishay does not specify automotive stress test data (e.g., HTOL, UHAST) for this part. It is intended for industrial, consumer, and medical power supplies - not automotive safety-critical systems.

What is the significance of "100 % Rg tested" for SI3440DV-T1-E3?

"100 % Rg tested" means every SI3440DV-T1-E3 unit undergoes production screening for gate resistance (R_g = 4–15 Ω at 1 MHz), ensuring consistent gate drive timing and reduced lot-to-lot variation in switching behavior. This improves predictability in high-volume manufacturing and eliminates need for post-assembly gate resistor tuning.

How does the body diode performance of SI3440DV-T1-E3 impact its use in synchronous rectification?

The SI3440DV-T1-E3 body diode has V_SD = 0.8–1.2 V at I_S = 1.7 A and t_rr = 40–60 ns, which is adequate for non-synchronous flyback operation but not optimized for synchronous rectification. For true synchronous designs, a dedicated low-V_F Schottky or MOSFET with enhanced body diode specs (e.g., Si7157DP) is preferred to minimize conduction loss and reverse recovery loss.

SI3440DV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 375mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.14W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3440DV-T1-E3 FAQ

1.How can I place an order for SI3440DV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3440DV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3440DV-T1-E3 reliable?

The price and inventory of SI3440DV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3440DV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3440DV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3440DV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3440DV-T1-E3?

SI3440DV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3440DV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3440DV-T1-E3?

For technical support, including SI3440DV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3440DV-T1-E3 requirements.

6.How does Aetrix verify that SI3440DV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3440DV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3440DV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3440DV-T1-E3?

All SI3440DV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3440DV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3440DV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3440DV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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