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Vishay Siliconix SI3440DV-T1-GE3
- Part No.:
- SI3440DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3440DV-T1-GE3.pdf
- Description:
- MOSFET N-CH 150V 1.2A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:27,073
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Product details
Overview
SI3440DV-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® power MOSFET in TSOP-6 package, rated for 1.5 A continuous drain current at 10 V gate drive, with RDS(on) of 0.375 Ω max at VGS = 10 V and 5.4 nC total gate charge - optimized as a primary-side switch in low-power DC/DC converters.
For engineers reviewing the SI3440DV-T1-GE3 datasheet, SI3440DV-T1-GE3 pinout, SI3440DV-T1-GE3 application, or SI3440DV-T1-GE3 equivalent, key selection criteria include its 150 V VDS, 0.375 Ω RDS(on) at 10 V, 5.4 nC Qg, TSOP-6 thermal resistance (RthJA = 90 °C/W), and guaranteed 100% Rg testing for consistent PWM switching performance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (2–4 V) and low 5.4 nC total gate charge enable efficient operation in high-frequency PWM topologies, while the integrated body diode supports synchronous rectification and flyback recovery paths.
The device is characterized for operation up to 150 °C junction temperature and features a maximum single-pulse avalanche energy of 0.8 mJ. Thermal design is supported by documented junction-to-foot (RthJF = 25 °C/W typical) and junction-to-ambient (RthJA = 90 °C/W steady-state) resistances under standard FR4 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports input voltages up to 150 V DC in isolated flyback or forward converters |
| RDS(on) max @ VGS = 10 V | 0.375 Ω - limits conduction loss to ≤0.84 W at 1.5 A, enabling compact thermal design |
| Qg typ. | 5.4 nC - enables <15 ns turn-off delay with 6 Ω gate resistor, suitable for >500 kHz switching |
| ID continuous @ TA = 25 °C | 1.2 A - defines safe DC current handling on standard 1" × 1" FR4 board without heatsink |
| VGS(th) | 2–4 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| RthJA (steady state) | 90 °C/W - determines junction temperature rise: ΔTJ ≈ 103 °C at 1.2 A, 0.375 Ω, ambient 25 °C |
| EAS | 0.8 mJ - quantifies single-pulse avalanche ruggedness for unclamped inductive switching events |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 0.5 mm max height. Designed for automated placement and reflow soldering on standard PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; electrically tied to exposed drain paddle for thermal conduction |
| 3 | Gate (G) | Control input; requires low-impedance drive due to 4–15 Ω internal gate resistance |
| 4 | Source (S) | Reference node for gate drive and current sensing; connects to power ground in common-source configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables lower RDS(on) per die area vs. planar MOSFETs, improving power density in space-constrained converters |
| PWM-optimized switching | Low Qgd/Qgs ratio (1.9/1.1 nC) reduces Miller plateau time, minimizing switching losses in hard-switched topologies |
| 100% Rg tested | Ensures gate resistance falls within 4–15 Ω range, guaranteeing predictable turn-on/turn-off timing across production lots |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709E, supporting environmentally compliant industrial and consumer designs |
Applications
| AC/DC Adapter Primary Switch | USB-C PD Auxiliary Power Path |
|---|---|
Use Scenario: 5–24 V input, 5–20 W isolated flyback converter in wall adapters. IC Role / Device Role / Timing Role: Primary-side power switch controlled by PWM controller (e.g., UCC28704) at 65–130 kHz. Use Value: 0.375 Ω RDS(on) and 5.4 nC Qg reduce both conduction and switching losses, enabling >85% efficiency at full load. | Use Scenario: Secondary-side auxiliary supply (3.3 V/100 mA) derived from main PD bus in USB-C power delivery systems. IC Role / Device Role / Timing Role: Low-duty-cycle synchronous rectifier or bias supply switch driven by dedicated gate driver. Use Value: 150 V rating accommodates transient overshoot on 20 V PD bus; TSOP-6 footprint minimizes PCB area in multi-rail power modules. |
| Industrial Sensor Node DC/DC Converter | IoT Gateway Standby Power Regulator |
Use Scenario: 12 V input, 3.3 V/200 mA isolated DC/DC for battery-powered wireless sensor nodes. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback operating at variable frequency (40–120 kHz). Use Value: Guaranteed 2–4 V VGS(th) ensures robust turn-on with microcontroller GPIO or low-voltage supervisor outputs. | Use Scenario: Always-on 5 V standby rail (≤50 mA) derived from main AC/DC supply in smart home gateways. IC Role / Device Role / Timing Role: High-side switch controlling auxiliary buck converter enable signal or direct linear regulator pass element. Use Value: 1.2 A continuous rating and -55 to +150 °C operating range support long-term reliability in thermally cycled environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3456DV-T1-GE3 | Higher VDS (200 V), higher RDS(on) (0.55 Ω @ 10 V), same TSOP-6 package and gate charge (5.5 nC) | Better suited for 48 V input or higher-voltage industrial supplies where 150 V margin is insufficient | Select when system input transients exceed 150 V or when higher breakdown margin is required for safety-critical isolation barriers |
| DMN3028LSD-13 | Lower VDS (30 V), much lower RDS(on) (0.028 Ω @ 10 V), same 6-pin TSOP package but different pinout (G-S-D layout) | Designed for low-voltage synchronous buck stages, not primary-side high-voltage switching | Not a drop-in replacement; requires PCB redesign due to reversed pinout and incompatible voltage rating for flyback primary use |
Compared with SI3440DV-T1-GE3, Si3456DV-T1-GE3 offers higher voltage headroom at the cost of increased conduction loss, while DMN3028LSD-13 delivers ultra-low RDS(on) but is unsuitable for primary-side 150 V operation - making SI3440DV-T1-GE3 the optimal balance of voltage rating, switching speed, and thermal performance in sub-25 W isolated converters.
Availability
SI3440DV-T1-GE3 is available at Aetrix Electronics and suitable for AC/DC adapters, USB-C PD auxiliary supplies, and industrial sensor node DC/DC converters requiring stable component supply, RoHS-compliant packaging, and proven thermal performance in TSOP-6 format.
Supply support for SI3440DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI3440DV-T1-GE3 belongs to Vishay's TrenchFET® Gen III low-power MOSFET product line, engineered specifically for high-frequency, space-constrained DC/DC conversion in consumer, industrial, and computing power supplies.
FAQ
What is the maximum continuous drain current rating for SI3440DV-T1-GE3 at 85 °C ambient temperature?
The SI3440DV-T1-GE3 has a maximum continuous drain current of 0.8 A at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package on standard FR4; actual usable current depends on PCB copper area, airflow, and duty cycle. The SI3440DV-T1-GE3 datasheet confirms this value under note "a" for continuous drain current ratings.
Does SI3440DV-T1-GE3 support logic-level gate drive from a 3.3 V microcontroller?
The SI3440DV-T1-GE3 has a gate threshold voltage range of 2–4 V, so it will turn on with 3.3 V gate drive, but RDS(on) increases significantly at lower VGS: 0.400 Ω max at VGS = 6 V versus 0.375 Ω at 10 V. For reliable saturation and minimal conduction loss, a 10 V gate drive is recommended. The SI3440DV-T1-GE3 is not classified as a true logic-level MOSFET.
What is the avalanche ruggedness specification for SI3440DV-T1-GE3?
The SI3440DV-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 0.8 mJ with L = 0.1 mH, and single avalanche current (IAS) of 4 A. These values are measured under standardized unclamped inductive switching conditions and confirm the device's ability to withstand transient overvoltage events without failure. The SI3440DV-T1-GE3 datasheet specifies these in the Absolute Maximum Ratings section.
Is SI3440DV-T1-GE3 pin-compatible with other TSOP-6 MOSFETs like Si3456DV-T1-GE3?
Yes, SI3440DV-T1-GE3 and Si3456DV-T1-GE3 share identical TSOP-6 mechanical dimensions, land pattern, and pinout (pins 1/2/5/6 = Drain, 3 = Gate, 4 = Source). Both comply with JEDEC MO-193C and use the same lead-free/halogen-free finish. However, electrical differences - notably VDS (150 V vs. 200 V) and RDS(on) - require verification of system voltage margins before substitution.
What thermal resistance values apply to SI3440DV-T1-GE3 in standard mounting conditions?
The SI3440DV-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 110 °C/W for steady-state operation on a 1" × 1" FR4 board, with a typical value of 90 °C/W. Its junction-to-foot (drain) resistance is 25–30 °C/W, enabling effective heat transfer to the PCB copper pour via the exposed drain paddle. These values are documented in the Thermal Resistance Ratings table of the SI3440DV-T1-GE3 datasheet.
SI3440DV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 375mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.14W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3440DV-T1-GE3 FAQ
1.How can I place an order for SI3440DV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3440DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3440DV-T1-GE3 reliable?
The price and inventory of SI3440DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3440DV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3440DV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3440DV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3440DV-T1-GE3?
SI3440DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3440DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3440DV-T1-GE3?
For technical support, including SI3440DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3440DV-T1-GE3 requirements.
6.How does Aetrix verify that SI3440DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3440DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3440DV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3440DV-T1-GE3?
All SI3440DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3440DV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3440DV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3440DV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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