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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3442BDV-T1-BE3

Name: SI3442BDV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3442BDV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3442BDV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3442BDV-T1-BE3.pdf

Description:: N-CHANNEL 2.5-V (G-S) MOSFET

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Product details

Overview

SI3442BDV-T1-BE3 from Vishay Siliconix is a 20 V, N-channel TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.057 Ω at V_GS = 4.5 V and 0.090 Ω at V_GS = 2.5 V, rated for 4.2 A continuous drain current at T_A = 25 °C, used in load switching and battery protection circuits.

For engineers reviewing the SI3442BDV-T1-BE3 datasheet, SI3442BDV-T1-BE3 pinout, SI3442BDV-T1-BE3 application, or SI3442BDV-T1-BE3 equivalent, key selection criteria include low-threshold gate drive compatibility (V_GS(th) = 0.6–1.8 V), thermally efficient TSOP-6 footprint, and verified 2.5-V logic-level operation in space-constrained DC-DC and portable power systems.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching characteristics. Its 2.5-V gate threshold enables direct interface with low-voltage microcontrollers and battery-powered logic without level-shifting.

The device integrates a body diode with V_SD = 0.75–1.2 V at I_S = 1.6 A and exhibits C_iss = 295 pF, Q_g = 3–5 nC, and t_r/t_f < 75 ns, supporting high-frequency PWM control in compact power management designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports input rails up to 18 V with 10 % margin for transients in USB-powered and Li-ion systems.
R_DS(on) @ V_GS = 4.5 V	0.057 Ω - Delivers ≤ 1 W conduction loss at 4.2 A, enabling thermally stable operation on standard FR4 PCBs.
R_DS(on) @ V_GS = 2.5 V	0.090 Ω - Ensures reliable turn-on with 2.5-V GPIOs, eliminating need for gate drivers in ultra-low-power applications.
I_D (continuous, T_A = 25 °C)	4.2 A - Sustains typical load currents of USB peripherals, LED drivers, and sensor modules without derating.
V_GS(th)	0.6–1.8 V - Guarantees robust turn-on across temperature and process variation, compatible with 1.8-V/2.5-V/3.3-V logic families.
Q_g	3–5 nC - Enables efficient switching at ≥500 kHz with minimal gate drive power in synchronous buck and OR-ing circuits.
T_J range	−55 to +150 °C - Qualified for industrial and automotive under-hood environments where ambient exceeds 85 °C.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm, optimized for thermal dissipation via exposed drain pad and high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Parallel-connected internal drain terminals - provide low-inductance, high-current path to PCB ground plane or power rail.
3	Gate (G)	Control terminal - accepts 2.5-V logic signals directly; requires no external pull-down for default-off behavior.
4	Source (S)	Reference node for gate drive and current sensing - connects to load return or system ground to complete switching loop.

Key Features

Feature	Design Value
TrenchFET® silicon architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs at same die size, reducing board area and thermal stress in 2.5-V systems.
Halogen-free and RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and medical product certifications.
Low gate charge (Q_g = 3–5 nC)	Reduces gate driver power consumption by >40 % versus comparable 20-V MOSFETs, extending battery life in portable devices.
Body diode with fast reverse recovery (t_rr = 30–60 ns)	Minimizes shoot-through risk and switching losses in synchronous rectification and bidirectional power paths.

Applications

USB Power Switching	Battery Protection Circuit
Use Scenario: Controlling 5-V USB VBUS delivery to downstream ports with overcurrent and short-circuit response. IC Role / Device Role / Timing Role: Low-side load switch managing power path between source and load, activated by host MCU GPIO. Use Value: R_DS(on) = 0.057 Ω limits voltage drop to < 240 mV at 4.2 A, preserving USB 2.0 voltage compliance while enabling fast fault shutdown.	Use Scenario: Isolating Li-ion cell from charging/discharging circuitry during overvoltage, undervoltage, or overtemperature events. IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-controlled stack, switched by dedicated protection ASIC output. Use Value: 2.5-V gate compatibility allows direct drive from protection IC's 2.5-V logic outputs, eliminating discrete level shifters and saving BOM cost.
Portable LED Driver	Industrial Sensor Node Power Gating
Use Scenario: PWM dimming control of white LEDs in handheld medical instruments and barcode scanners. IC Role / Device Role / Timing Role: High-side or low-side current switch modulated at 1–10 kHz by MCU timer output. Use Value: Q_g = 3–5 nC and t_f < 25 ns ensure clean PWM edges with < 1 % duty-cycle distortion, maintaining precise brightness control.	Use Scenario: Enabling/disabling entire sensor subsystem (MCU, ADC, transceiver) during deep-sleep cycles to reduce quiescent current. IC Role / Device Role / Timing Role: Main power rail switch controlled by RTC-interrupt-driven GPIO to minimize leakage and wake latency. Use Value: V_GS(th) = 0.6–1.8 V ensures reliable turn-on even with aged batteries delivering 2.7 V, preventing brownout-induced sleep failures.

USB Power Switching

Battery Protection Circuit

Use Scenario: Controlling 5-V USB VBUS delivery to downstream ports with overcurrent and short-circuit response.

IC Role / Device Role / Timing Role: Low-side load switch managing power path between source and load, activated by host MCU GPIO.

Use Value: R_DS(on) = 0.057 Ω limits voltage drop to < 240 mV at 4.2 A, preserving USB 2.0 voltage compliance while enabling fast fault shutdown.

Use Scenario: Isolating Li-ion cell from charging/discharging circuitry during overvoltage, undervoltage, or overtemperature events.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-controlled stack, switched by dedicated protection ASIC output.

Use Value: 2.5-V gate compatibility allows direct drive from protection IC's 2.5-V logic outputs, eliminating discrete level shifters and saving BOM cost.

Portable LED Driver

Industrial Sensor Node Power Gating

Use Scenario: PWM dimming control of white LEDs in handheld medical instruments and barcode scanners.

IC Role / Device Role / Timing Role: High-side or low-side current switch modulated at 1–10 kHz by MCU timer output.

Use Value: Q_g = 3–5 nC and t_f < 25 ns ensure clean PWM edges with < 1 % duty-cycle distortion, maintaining precise brightness control.

Use Scenario: Enabling/disabling entire sensor subsystem (MCU, ADC, transceiver) during deep-sleep cycles to reduce quiescent current.

IC Role / Device Role / Timing Role: Main power rail switch controlled by RTC-interrupt-driven GPIO to minimize leakage and wake latency.

Use Value: V_GS(th) = 0.6–1.8 V ensures reliable turn-on even with aged batteries delivering 2.7 V, preventing brownout-induced sleep failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 0.045 Ω @ 4.5 V (lower), but V_GS(th) = 0.5–1.2 V (narrower range); TSOP-6 footprint identical.	Higher efficiency at 4.5-V drive, but less margin for marginal 2.5-V logic sources.	Select when system uses stable 3.3-V or 4.5-V gate drive and prioritizes lowest conduction loss.
AO3400	R_DS(on) = 0.042 Ω @ 4.5 V, but V_GS(th) = 0.8–1.8 V and Q_g = 6.7 nC (higher); same TSOP-6 package.	Slower switching and higher gate drive demand; not recommended for 2.5-V-only control.	Choose only if existing design already uses AO3400 and gate voltage is ≥3.3 V; avoid for new 2.5-V logic designs.

Compared with DMN2020LFG-7 and AO3400, SI3442BDV-T1-BE3 provides the widest guaranteed V_GS(th) range and lowest Q_g among TSOP-6 20-V N-channel MOSFETs, making it optimal for mixed-voltage or battery-depleted operation where gate drive headroom is constrained.

Availability

SI3442BDV-T1-BE3 is available at Aetrix Electronics and suitable for USB power delivery, battery protection, and portable LED driver applications requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI3442BDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The Si3442BDV belongs to Vishay's TrenchFET® logic-level MOSFET family, engineered for high-efficiency, low-voltage switching in space-constrained portable and industrial power management systems.

FAQ

What is the maximum continuous drain current for SI3442BDV-T1-BE3 at 70 °C ambient temperature?

The SI3442BDV-T1-BE3 supports 3.4 A continuous drain current at T_A = 70 °C with proper PCB copper area per Vishay's recommended land pattern. This rating assumes surface mounting on FR4 with t ≤ 5 s reflow profile and accounts for thermal resistance R_thJA = 120 °C/W in steady-state conditions. Derating curves in the datasheet confirm linear reduction from 4.2 A at 25 °C to 3.4 A at 70 °C.

Does SI3442BDV-T1-BE3 support true 2.5-V logic-level gate drive?

Yes, SI3442BDV-T1-BE3 is fully characterized for 2.5-V operation: R_DS(on) = 0.090 Ω max at V_GS = 2.5 V and I_D = 3.4 A, and V_GS(th) spans 0.6–1.8 V, ensuring turn-on well below 2.5 V across temperature and process corners. This eliminates need for gate boosters in 2.5-V microcontroller interfaces.

What is the thermal resistance junction-to-foot (R_thJF) for SI3442BDV-T1-BE3?

The SI3442BDV-T1-BE3 has a maximum junction-to-foot thermal resistance (R_thJF) of 85 °C/W under steady-state conditions. This parameter reflects heat transfer from die to exposed drain pad, critical for designs using thermal vias to inner ground planes. The typical value is 70 °C/W, enabling higher power handling than junction-to-ambient alone would suggest.

Is SI3442BDV-T1-BE3 halogen-free and RoHS-compliant?

Yes, SI3442BDV-T1-BE3 meets both RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free requirements. The "-BE3" suffix denotes lead-free and halogen-free construction, verified per Vishay's material declarations and certified test reports. Full compliance documentation is available upon request from Aetrix Electronics.

Can SI3442BDV-T1-BE3 be used in reverse conduction (source-to-drain) mode?

Yes, SI3442BDV-T1-BE3 includes an integrated body diode with V_SD = 0.75–1.2 V at I_S = 1.6 A and t_rr = 30–60 ns, enabling controlled reverse current flow. However, sustained reverse conduction must respect I_S = 1.4 A (pulsed) and 0.72 A (continuous) limits, and thermal design must account for diode power dissipation in bidirectional topologies.

SI3442BDV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 57mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 295 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 860mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3442BDV-T1-BE3 FAQ

1.How can I place an order for SI3442BDV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3442BDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3442BDV-T1-BE3 reliable?

The price and inventory of SI3442BDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3442BDV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3442BDV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3442BDV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3442BDV-T1-BE3?

SI3442BDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3442BDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3442BDV-T1-BE3?

For technical support, including SI3442BDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3442BDV-T1-BE3 requirements.

6.How does Aetrix verify that SI3442BDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3442BDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3442BDV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3442BDV-T1-BE3?

All SI3442BDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3442BDV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3442BDV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3442BDV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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