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Vishay Siliconix SI3442BDV-T1-E3
- Part No.:
- SI3442BDV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3442BDV-T1-E3.pdf
- Description:
- MOSFET N-CH 20V 3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:24,457
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Product details
Overview
SI3442BDV-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 20 V VDS, 4.2 A continuous drain current at TA = 25 °C, and 0.057 Ω RDS(on) at VGS = 4.5 V - optimized for high-efficiency load switching in space-constrained DC-DC converter and battery protection circuits.
For engineers reviewing the SI3442BDV-T1-E3 datasheet, SI3442BDV-T1-E3 pinout, SI3442BDV-T1-E3 application, or SI3442BDV-T1-E3 equivalent, key selection criteria include its 2.5-V gate threshold compatibility with low-voltage logic, TSOP-6 thermal performance (RthJA = 120 °C/W steady-state), and verified 0.090 Ω on-resistance at 2.5 V drive for portable system power management.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) with fast switching characteristics: 35 ns turn-on delay, 50 ns rise time, and 25 ns fall time under standard test conditions (VDD = 10 V, Rg = 6 Ω). Its gate threshold voltage (0.6–1.8 V) ensures reliable enhancement-mode operation across temperature.
The device integrates a body diode with 0.75–1.2 V forward voltage at 1.6 A and exhibits 295 pF input capacitance (Ciss) and 45 pF reverse transfer capacitance (Crss), supporting efficient high-frequency synchronous rectification and PWM control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports 12-V and 5-V rail switching without avalanche stress |
| RDS(on) @ VGS = 4.5 V | 0.057 Ω - enables <150 mW conduction loss at 4 A in compact layouts |
| RDS(on) @ VGS = 2.5 V | 0.090 Ω - ensures functional switching with 2.5-V microcontroller GPIOs |
| ID (continuous, TA = 25 °C) | 4.2 A - delivers sufficient current for USB-powered peripherals and LED drivers |
| Qg | 3–5 nC - reduces gate drive power and enables efficient 1–2 MHz PWM operation |
| TJ range | −55 to +150 °C - qualified for automotive cabin and industrial ambient environments |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 1.0 mm max height, designed for automated assembly and thermal relief via exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Parallel-connected internal drain terminals - primary current path and thermal conduction path to PCB copper |
| 3 | Gate (G) | Control terminal requiring ≤±12 V drive; 2.7 Ω gate resistance limits ringing in high-speed switching |
| 4 | Source (S) | Reference node for gate drive and current sensing; tied to power ground in high-side or low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables sub-0.1 Ω RDS(on) at 2.5 V gate drive for ultra-low-voltage logic compatibility |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment |
| Low Qgd/Qg ratio (0.95/5 nC) | Improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Body diode trr = 30–60 ns | Supports synchronous rectification in buck converters up to ~1 MHz without external Schottky |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling charge/discharge path with integrated reverse-blocking capability. Use Value: 0.090 Ω RDS(on) at 2.5 V enables direct MCU GPIO control without level-shifting, minimizing BOM count. | Use Scenario: Hot-swap and fault-isolation switching for USB Type-C ports delivering up to 3 A. IC Role / Device Role / Timing Role: High-side load switch managing inrush current and enabling controlled power ramp-up. Use Value: 4.2 A continuous rating and 20 V VDS margin ensure robust operation across USB PD 5 V/9 V/15 V profiles. |
| DC-DC Synchronous Rectifier | Portable LED Driver |
Use Scenario: Secondary-side rectification in 5 V–12 V buck converters for wearables and IoT sensors. IC Role / Device Role / Timing Role: Synchronously commutated freewheeling switch replacing Schottky diode to reduce conduction loss. Use Value: 0.75–1.2 V VSD and 30–60 ns trr minimize reverse recovery loss and improve light-load efficiency. | Use Scenario: Constant-current dimming control for RGB LED strings in handheld medical devices. IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness via duty-cycle adjustment. Use Value: 35 ns td(on) and 25 ns tf support >500 kHz dimming frequencies without visible flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 0.045 Ω @ 4.5 V (lower), but 1.2 V VGS(th) min - less compatible with 2.5 V logic | Preferred in fixed 3.3 V gate-drive systems where lower conduction loss outweighs logic-level flexibility | Select when gate drive ≥3.3 V is guaranteed and RDS(on) reduction is critical |
| AO3400 | RDS(on) = 0.042 Ω @ 4.5 V, but RDS(on) = 0.085 Ω @ 2.5 V - slightly better 2.5 V performance, yet higher Ciss (490 pF) | Suitable for cost-sensitive consumer electronics where layout area allows larger gate drive loop | Choose for legacy designs already using AO3400 footprint and where 2.5 V margin is tighter |
Compared with DMN2020LSD-13 and AO3400, SI3442BDV-T1-E3 provides the best balance of 2.5-V logic compatibility, thermal resistance (120 °C/W), and gate charge (3–5 nC) for space-constrained, battery-operated systems requiring rapid, low-loss switching.
Availability
SI3442BDV-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, and DC-DC synchronous rectifiers requiring stable component supply and lead-free compliance.
Supply support for SI3442BDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si3442BDV product line targets low-voltage, high-density power management in portable and battery-powered systems, emphasizing logic-level gate drive, thermally efficient packaging, and halogen-free manufacturing.
FAQ
What is the maximum continuous drain current for SI3442BDV-T1-E3 at 70 °C ambient temperature?
The SI3442BDV-T1-E3 supports 3.4 A continuous drain current at TA = 70 °C under standard PCB mounting conditions (FR4, t ≤ 5 s). This rating reflects derating due to reduced thermal dissipation at elevated ambient temperatures and assumes proper copper pour and airflow per Vishay's recommended land pattern.
Does SI3442BDV-T1-E3 require a gate resistor for stable switching in a 1 MHz PWM circuit?
Yes - while the SI3442BDV-T1-E3 has an internal gate resistance of 2.7 Ω, a series gate resistor (typically 5–10 Ω) is recommended in 1 MHz PWM applications to dampen ringing, control slew rate, and prevent unintended turn-on from dv/dt coupling. The datasheet specifies 6 Ω in timing characterization tests.
Is SI3442BDV-T1-E3 suitable for high-side switching configurations?
Yes - the SI3442BDV-T1-E3 can be used in high-side configurations when paired with appropriate gate drive circuitry capable of providing VGS ≥ 2.5 V above the source potential. Its 20 V VDS rating and 0.090 Ω RDS(on) at 2.5 V make it viable for 5 V and 12 V rail switching, though level-shifting or bootstrap gate drive is required.
What is the thermal resistance from junction to foot (RthJF) for SI3442BDV-T1-E3?
The SI3442BDV-T1-E3 has a maximum junction-to-foot thermal resistance of 85 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die directly to the exposed drain pad, making it critical for estimating temperature rise when the drain is soldered to large copper areas on the PCB.
Can SI3442BDV-T1-E3 replace SI3442BDV-T1-GE3 in a RoHS-compliant design?
Yes - SI3442BDV-T1-E3 is RoHS-compliant and lead-free, matching the environmental specification of SI3442BDV-T1-GE3. The only distinction is halogen content: SI3442BDV-T1-GE3 is both lead-free and halogen-free per IEC 61249-2-21, whereas SI3442BDV-T1-E3 is lead-free but not certified halogen-free. Both share identical electrical and thermal specifications.
SI3442BDV-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 295 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 860mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3442BDV-T1-E3 FAQ
1.How can I place an order for SI3442BDV-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3442BDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3442BDV-T1-E3 reliable?
The price and inventory of SI3442BDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3442BDV-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI3442BDV-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3442BDV-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3442BDV-T1-E3?
SI3442BDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3442BDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3442BDV-T1-E3?
For technical support, including SI3442BDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3442BDV-T1-E3 requirements.
6.How does Aetrix verify that SI3442BDV-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI3442BDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3442BDV-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI3442BDV-T1-E3?
All SI3442BDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3442BDV-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3442BDV-T1-E3 part is unused and in its original packaging.
Return procedure for SI3442BDV-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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