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Vishay Siliconix SI3442BDV-T1-GE3
- Part No.:
- SI3442BDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3442BDV-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,590
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Product details
Overview
SI3442BDV-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 4.2 A continuous drain current at 25 °C, and 0.057 Ω RDS(on) at VGS = 4.5 V. It operates in low-voltage load switching applications such as USB power delivery and portable device battery protection circuits.
For engineers reviewing the SI3442BDV-T1-GE3 datasheet, SI3442BDV-T1-GE3 pinout, SI3442BDV-T1-GE3 application, or SI3442BDV-T1-GE3 equivalent, key selection criteria include its 2.5-V gate threshold compatibility, TSOP-6 footprint, low RDS(on) at 2.5 V drive, and thermal resistance of 120 °C/W (steady-state junction-to-ambient).
Technical Context
This MOSFET uses trench-gate silicon technology to achieve enhanced conduction efficiency at low gate drive voltages. Its gate threshold voltage range (0.6–1.8 V) enables reliable turn-on with 2.5-V logic-level signals, and its body diode exhibits 0.75–1.2 V forward voltage at 1.6 A.
The device features a 6-lead TSOP package with drain-connected pins (1, 2, 5, 6), gate on pin 3, and source on pin 4 - optimized for high-current density PCB layouts and thermal dissipation via the exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports input rails up to 18 V with margin for transients in USB PD and power bank designs |
| RDS(on) @ 4.5 V | 0.057 Ω - limits I²R loss to ≤1.0 W at 4.2 A, enabling compact thermal design |
| RDS(on) @ 2.5 V | 0.090 Ω - ensures functional switching with 2.5-V microcontroller GPIO without level-shifting |
| ID (continuous, 25 °C) | 4.2 A - sufficient for single-cell Li-ion charging paths and 5-V/3-A load switches |
| Qg | 3–5 nC - enables fast switching (≤55 ns turn-on delay) with low gate-drive power demand |
| RthJA (steady state) | 120 °C/W - requires ≥100 mm² copper pour for safe operation at full current in FR4 |
| VGS(th) | 0.6–1.8 V - guarantees turn-on with standard 2.5-V logic while avoiding false triggering near ground |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm, with exposed drain pad for thermal conduction. Pin 1–2–5–6 are internally connected to drain; pin 3 is gate; pin 4 is source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | High-current output node; electrically tied to exposed thermal pad - must be soldered to PCB ground plane or dedicated power plane |
| 3 | Gate | Control input; requires <100 nA leakage handling and low-inductance routing to minimize ringing during switching |
| 4 | Source | Reference node for gate drive and current sensing; connects to load return or battery negative |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.057 Ω RDS(on) at 4.5 V in TSOP-6 - 30% lower on-resistance than planar MOSFETs of same size |
| 2.5-V logic-compatible gate | Guaranteed turn-on with 2.5-V microcontrollers (e.g., STM32L series) without external level shifters |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer electronics with strict material declarations |
| Low Qgd/Qg ratio (0.95/5 nC) | Reduces Miller-induced switching instability and improves hard-switching robustness in DC-DC controllers |
Applications
| USB Power Delivery Switch | Li-ion Battery Protection |
|---|---|
Use Scenario: Bidirectional 5-V/3-A power path control between USB-C port and system bus in portable SSDs. IC Role / Device Role / Timing Role: Low-side load switch managing power flow direction and fault isolation. Use Value: 0.090 Ω RDS(on) at 2.5 V enables direct MCU control; 20 V rating covers USB PD 3.0 transient spikes. | Use Scenario: Overcurrent and short-circuit protection in single-cell 3.7-V battery packs for Bluetooth earbuds. IC Role / Device Role / Timing Role: Primary discharge FET in integrated protection IC reference designs. Use Value: 4.2 A continuous rating supports 2C discharge; low gate charge minimizes control IC drive burden. |
| Power Bank Output Stage | IoT Sensor Node Load Switch |
Use Scenario: 5-V regulated output stage in 10,000-mAh portable chargers with dual USB-A ports. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement in buck-boost output stage. Use Value: 0.057 Ω RDS(on) reduces conduction loss by >40% vs. discrete diode solutions at 2 A load. | Use Scenario: Controlled power gating for BLE SoC and environmental sensors in battery-powered smart agriculture nodes. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load enable switch activated by 2.5-V GPIO. Use Value: 1 µA IDSS at 20 V ensures <1 µW standby leakage - extends 10-year battery life targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 0.045 Ω @ 4.5 V (lower), but VGS(th) = 1.0–2.5 V (higher min); TSOP-6 package | Less suitable for 2.5-V-only drive; better for 3.3-V systems with tighter RDS(on) tolerance | Select when gate drive is ≥3.0 V and lowest possible conduction loss is critical |
| AO3400 | RDS(on) = 0.042 Ω @ 4.5 V; VGS(th) = 0.7–1.4 V; same TSOP-6, but not halogen-free | RoHS-compliant but not IEC 61249-2-21 certified; higher gate leakage (±250 nA) | Select for cost-sensitive industrial designs where halogen-free compliance is not mandated |
Compared with DMN2020LSD-13 and AO3400, SI3442BDV-T1-GE3 uniquely balances 2.5-V logic compatibility, halogen-free compliance, and 0.090 Ω RDS(on) at 2.5 V - making it optimal for space-constrained, low-voltage consumer electronics requiring full material traceability.
Availability
SI3442BDV-T1-GE3 is available at Aetrix Electronics and suitable for USB power delivery modules, Li-ion battery protection circuits, and IoT sensor node power management requiring stable component supply across multi-year production cycles.
Supply support for SI3442BDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.
The Si3442BDV belongs to Vishay's TrenchFET® Gen III low-voltage logic-level MOSFET family, engineered specifically for energy-efficient load switching in battery-powered and USB-powered portable electronics.
FAQ
What is the maximum continuous drain current for SI3442BDV-T1-GE3 at 70 °C ambient temperature?
The SI3442BDV-T1-GE3 supports 3.4 A continuous drain current at TA = 70 °C under steady-state conditions. This rating assumes proper PCB thermal management - specifically, ≥100 mm² of 2-oz copper connected to the drain pads. Exceeding this current without adequate heatsinking risks junction temperature exceeding 150 °C, triggering thermal shutdown in protected systems or permanent degradation.
Does SI3442BDV-T1-GE3 have an integrated ESD protection diode on the gate?
No, SI3442BDV-T1-GE3 does not include integrated gate ESD protection. Its gate-body leakage (IGSS) is specified at ±100 nA at ±12 V, confirming absence of internal clamping structures. System-level ESD protection - such as a 100-Ω series resistor and 5.6-V TVS diode from gate to source - is required per IEC 61000-4-2 Level 4 (8 kV contact) compliance in end equipment using SI3442BDV-T1-GE3.
Can SI3442BDV-T1-GE3 be used in reverse conduction mode (source-to-drain current)?
Yes, SI3442BDV-T1-GE3 supports source-to-drain conduction via its intrinsic body diode, with a forward voltage of 0.75–1.2 V at 1.6 A and VGS = 0 V. However, its RDS(on) does not apply in reverse mode; for bidirectional current handling, a second SI3442BDV-T1-GE3 in back-to-back configuration is required - a common topology in USB-C port protection circuits using SI3442BDV-T1-GE3.
What is the recommended land pattern for SI3442BDV-T1-GE3 per Vishay documentation?
Vishay document 72610 specifies a TSOP-6 land pattern with 0.95-mm pitch (e1), 0.32-mm pad width (b), and 1.65-mm pad length (E1). The thermal pad (pins 1,2,5,6) requires a 2.408 mm × 0.922 mm stencil opening with 50% paste coverage. Misalignment beyond ±0.05 mm increases risk of solder bridging between drain and source pins - a known failure mode verified in reliability testing of SI3442BDV-T1-GE3 assemblies.
Is SI3442BDV-T1-GE3 suitable for PWM motor control at 25 kHz?
Yes, SI3442BDV-T1-GE3 supports 25 kHz PWM motor control in small fans and haptic drivers. Its 5 nC total gate charge and 2.7 Ω gate resistance allow full switching within 100 ns using a 10-mA peak gate driver. However, due to its 75–100 °C/W junction-to-ambient thermal resistance, average power dissipation must remain below 0.5 W - limiting usable duty cycle to ≤25% at 4 A peak current unless actively cooled.
SI3442BDV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 295 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 860mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3442BDV-T1-GE3 FAQ
1.How can I place an order for SI3442BDV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3442BDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3442BDV-T1-GE3 reliable?
The price and inventory of SI3442BDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3442BDV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3442BDV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3442BDV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3442BDV-T1-GE3?
SI3442BDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3442BDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3442BDV-T1-GE3?
For technical support, including SI3442BDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3442BDV-T1-GE3 requirements.
6.How does Aetrix verify that SI3442BDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3442BDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3442BDV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3442BDV-T1-GE3?
All SI3442BDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3442BDV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3442BDV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3442BDV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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