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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3442CDV-T1-GE3

Name: SI3442CDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3442CDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3442CDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3442CDV-T1-GE3.pdf

Description:: MOSFET N-CH 20V 8A 6TSOP

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Product details

Overview

SI3442CDV-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® Power MOSFET in TSOP-6 package, with R_DS(on) = 0.027 Ω at V_GS = 10 V, 8 A continuous drain current (T_C = 25 °C), 4.3 nC total gate charge, and 100 % R_g and UIS tested - optimized for high-efficiency DC/DC and boost converters requiring low conduction loss and fast switching.

For engineers reviewing the SI3442CDV-T1-GE3 datasheet, SI3442CDV-T1-GE3 pinout, SI3442CDV-T1-GE3 application, or SI3442CDV-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, TSOP-6 layout guidance, body diode recovery characteristics, and validated alternative options for load switch and power conversion designs.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching transitions. Its gate threshold voltage (0.6–1.5 V) enables direct drive from 2.5 V, 3.3 V, and 4.5 V logic, while its 0.049 Ω R_DS(on) at V_GS = 2.5 V supports efficient operation in low-voltage synchronous rectification.

The device integrates a robust intrinsic body diode with t_rr = 10–20 ns and Q_rr = 3–6 nC, enabling use in freewheeling paths of buck and boost topologies without external Schottky supplementation. Thermal design is anchored to R_thJF = 38–46 °C/W (junction-to-foot) and R_thJA = 61–74 °C/W (junction-to-ambient, t ≤ 5 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters.
R_DS(on)	0.027 Ω @ V_GS = 10 V - Enables <170 mW conduction loss at 7.5 A, critical for thermally constrained PCB layouts.
I_D (continuous)	8 A @ T_C = 25 °C - Supports high-current load switching up to 96 W at 12 V with minimal derating on standard FR4.
Q_g	4.3 nC @ V_GS = 4.5 V - Reduces gate drive power and switching loss in 500 kHz–1 MHz PWM applications.
t_rr	10–20 ns - Limits reverse recovery energy and EMI in hard-switched topologies using body diode conduction.
R_thJF	38–46 °C/W - Defines thermal path from junction to exposed drain pad; requires copper plane under pins 1,2,5,6 for effective heat extraction.
V_GS(th)	0.6–1.5 V - Ensures reliable turn-on with 2.5 V microcontroller GPIOs and eliminates need for level-shifting circuitry.

Pinout & Package

TSOP-6 package with exposed drain paddle (pins 1, 2, 5, 6 tied internally to drain); 3 mm × 2.85 mm footprint; JEDEC MO-193C compliant; designed for surface-mount reflow with thermal copper spreading under drain leads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected to die drain and exposed copper paddle - primary thermal and current path; must be soldered to large copper plane for thermal management.
3	Gate (G)	Control terminal; low input capacitance (C_iss = 335 pF) enables fast edge rates with modest gate drivers.
4	Source (S)	Reference node for gate drive and current sensing; connects to ground or low-side return path in buck/boost configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact 20 V switching cells in space-constrained DC/DC modules.
100 % R_g and UIS tested	Guarantees gate resistance consistency and ruggedness against unclamped inductive switching events in motor drive and converter flyback phases.
Low V_GS(th) range	Enables direct interface with 2.5 V/3.3 V logic without gate driver ICs, reducing BOM count and layout complexity in portable power systems.
Optimized body diode	Q_rr = 3–6 nC and t_rr = 10–20 ns minimize recovery loss and voltage overshoot during synchronous rectifier dead-time intervals.
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21, supporting environmentally regulated industrial and automotive supply chains.

Applications

DC/DC Converters	Boost Converters
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load regulation in networking equipment and FPGA power supplies. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve thermal margin. Use Value: Achieves >94 % efficiency at 6 A output by cutting R_DS(on)-based losses to <100 mW versus >400 mW with 0.4 V Schottky.	Use Scenario: 3.3 V to 12 V step-up converter in USB-powered instrumentation and sensor hubs. IC Role / Device Role: Main power switch controlling inductor current flow during duty-cycle phases. Use Value: 4.3 nC Q_g allows clean 1 MHz switching with minimal gate drive loss, enabling smaller magnetics and reduced output ripple.
Load Switch	Power OR-ing
Use Scenario: Hot-swap control for dual-input 5 V rail selection in industrial PLC I/O modules. IC Role / Device Role: High-side or low-side controlled pass element enabling soft-start and overcurrent protection. Use Value: 0.030 Ω R_DS(on) at 4.5 V gate drive ensures <150 mV drop at 5 A, preserving downstream voltage regulation accuracy.	Use Scenario: Redundant 12 V power supply combining in telecom line cards with automatic failover. IC Role / Device Role: Back-to-back configured MOSFET acting as ideal diode to block reverse current and eliminate forward drop. Use Value: Body diode V_SD = 0.8–1.2 V at 5.2 A enables low-loss forward conduction while Q_rr minimizes cross-conduction risk during switchover.

DC/DC Converters

Boost Converters

Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load regulation in networking equipment and FPGA power supplies.

IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve thermal margin.

Use Value: Achieves >94 % efficiency at 6 A output by cutting R_DS(on)-based losses to <100 mW versus >400 mW with 0.4 V Schottky.

Use Scenario: 3.3 V to 12 V step-up converter in USB-powered instrumentation and sensor hubs.

IC Role / Device Role: Main power switch controlling inductor current flow during duty-cycle phases.

Use Value: 4.3 nC Q_g allows clean 1 MHz switching with minimal gate drive loss, enabling smaller magnetics and reduced output ripple.

Load Switch

Power OR-ing

Use Scenario: Hot-swap control for dual-input 5 V rail selection in industrial PLC I/O modules.

IC Role / Device Role: High-side or low-side controlled pass element enabling soft-start and overcurrent protection.

Use Value: 0.030 Ω R_DS(on) at 4.5 V gate drive ensures <150 mV drop at 5 A, preserving downstream voltage regulation accuracy.

Use Scenario: Redundant 12 V power supply combining in telecom line cards with automatic failover.

IC Role / Device Role: Back-to-back configured MOSFET acting as ideal diode to block reverse current and eliminate forward drop.

Use Value: Body diode V_SD = 0.8–1.2 V at 5.2 A enables low-loss forward conduction while Q_rr minimizes cross-conduction risk during switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3456DV-T1-GE3	R_DS(on) = 0.018 Ω @ 10 V, higher ID = 10.5 A, same TSOP-6 package and pinout.	Better suited for higher-current DC/DC stages where <100 mW conduction loss is required at >8 A.	Select when thermal budget is tighter and gate drive can support identical logic-level thresholds.
DMN2020LFG-7	R_DS(on) = 0.022 Ω @ 4.5 V, 8 A rating, same 20 V V_DS, but in leadless 2×2 mm DFN package.	Offers superior thermal performance (R_thJA ≈ 50 °C/W) and smaller footprint, but requires different PCB layout and stencil design.	Choose for space-constrained designs needing lower R_DS(on) at 4.5 V and improved power density.

Compared with SI3442CDV-T1-GE3, Si3456DV-T1-GE3 delivers lower on-resistance in the same footprint for higher current handling, while DMN2020LFG-7 trades TSOP-6 compatibility for enhanced thermal efficiency and miniaturization - both require validation of gate drive timing and PCB thermal relief.

Availability

SI3442CDV-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, boost converters, and load switch applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for SI3442CDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si3442CDV belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-frequency, low-voltage power conversion where low Q_g/R_DS(on) ratio and robust body diode performance are essential.

FAQ

What is the maximum continuous drain current for SI3442CDV-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI3442CDV-T1-GE3 is 6.6 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal simulations alongside R_thJF = 38–46 °C/W to ensure safe operation below T_J(max) = 150 °C. SI3442CDV-T1-GE3 maintains this rating without requiring external heatsinking when mounted on ≥1" × 1" FR4 with full drain-pad copper exposure.

Does SI3442CDV-T1-GE3 support 2.5 V logic-level gate drive?

Yes, SI3442CDV-T1-GE3 supports 2.5 V logic-level gate drive, with guaranteed R_DS(on) = 0.049 Ω at V_GS = 2.5 V and I_D = 2 A. Its V_GS(th) range of 0.6–1.5 V ensures turn-on margin well below 2.5 V, eliminating need for gate boosting. SI3442CDV-T1-GE3 has been validated in 2.5 V microcontroller-driven load switches and synchronous buck controllers where gate drive strength is limited.

What is the body diode forward voltage of SI3442CDV-T1-GE3 at 5.2 A?

The body diode forward voltage (V_SD) of SI3442CDV-T1-GE3 is 0.8–1.2 V at I_S = 5.2 A and V_GS = 0 V, per the Drain-Source Body Diode Characteristics table. This low V_SD enables efficient freewheeling in boost and flyback converters, and SI3442CDV-T1-GE3's t_rr = 10–20 ns and Q_rr = 3–6 nC further reduce associated switching loss and EMI generation.

How is thermal management implemented for SI3442CDV-T1-GE3 in TSOP-6 package?

Thermal management for SI3442CDV-T1-GE3 relies on soldering pins 1, 2, 5, and 6 (all internally connected to drain) to a large copper plane on the PCB, forming the primary junction-to-ambient heat path. The recommended footprint uses a "T"-shaped copper spread under the device body to maximize lateral heat conduction. SI3442CDV-T1-GE3 achieves R_thJA = 61–74 °C/W (t ≤ 5 s) and R_thJF = 38–46 °C/W in this configuration, as confirmed in Vishay Application Note AN823.

Is SI3442CDV-T1-GE3 suitable for synchronous rectification in buck converters?

Yes, SI3442CDV-T1-GE3 is suitable for synchronous rectification in buck converters due to its low R_DS(on) (0.027 Ω @ 10 V), fast switching (t_d(on) = 3–9 ns, t_f = 5–12 ns), and optimized body diode (V_SD = 0.8–1.2 V, t_rr = 10–20 ns). SI3442CDV-T1-GE3 reduces conduction loss versus Schottky alternatives and minimizes reverse recovery penalty during dead-time, improving overall efficiency above 2 A output current.

SI3442CDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 335 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3442CDV-T1-GE3 FAQ

1.How can I place an order for SI3442CDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3442CDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3442CDV-T1-GE3 reliable?

The price and inventory of SI3442CDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3442CDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3442CDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3442CDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3442CDV-T1-GE3?

SI3442CDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3442CDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3442CDV-T1-GE3?

For technical support, including SI3442CDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3442CDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3442CDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3442CDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3442CDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3442CDV-T1-GE3?

All SI3442CDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3442CDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3442CDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3442CDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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