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Vishay Siliconix SI3443BDV-T1-BE3
- Part No.:
- SI3443BDV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3443BDV-T1-BE3.pdf
- Description:
- MOSFET P-CH 20V 3.6A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,300
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Product details
Overview
SI3443BDV-T1-BE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in TSOP-6 package, rated for -20 V VDS, 0.060 Ω RDS(on) at -4.5 V VGS, and -4.7 A continuous drain current at TA = 25 °C. It serves as a low-side load switch in power management circuits for portable electronics and USB-powered devices.
For engineers reviewing the SI3443BDV-T1-BE3 datasheet, SI3443BDV-T1-BE3 pinout, SI3443BDV-T1-BE3 application, or SI3443BDV-T1-BE3 equivalent, key selection criteria include its -2.5 V gate threshold, 6 nC total gate charge, thermal resistance of 90 °C/W (steady-state), and compatibility with 2.5 V logic-level drive in space-constrained PCB layouts.
Technical Context
This device operates as a single P-channel enhancement-mode MOSFET with trench-based silicon architecture optimized for low RDS(on) and fast switching. Its gate threshold voltage range (-0.6 V to -1.4 V) enables reliable turn-on with 2.5 V–3.3 V microcontroller outputs, and its 6 nC Qg supports efficient PWM control up to several hundred kHz.
The TSOP-6 package provides four parallel drain terminals (pins 1, 2, 5, 6), one source (pin 4), and one gate (pin 3), delivering low-inductance layout and enhanced thermal dissipation via the exposed drain pad. Junction-to-foot thermal resistance is 30 °C/W (typical), supporting high-current pulsed operation without external heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | -20 V - Supports rail voltages up to 20 V in reverse-polarity protection and high-side switch configurations |
| RDS(on) @ VGS = -4.5 V | 0.048 Ω (typ), 0.060 Ω (max) - Enables <100 mW conduction loss at 4.7 A, critical for battery-powered efficiency |
| Qg Total Gate Charge | 6 nC (typ) - Reduces gate drive power and switching transition time in DC-DC and load-switching applications |
| VGS(th) | -0.6 V to -1.4 V - Ensures full enhancement with 2.5 V logic, eliminating need for level-shifting circuitry |
| ID Continuous (TA = 25 °C) | -3.6 A - Sustains steady load currents in compact USB-C PD sink designs and smart e-fuse implementations |
| RthJA (Steady State) | 90 °C/W - Allows 1.1 W power dissipation on standard FR4 without forced air, simplifying thermal design |
| Package | TSOP-6 - Surface-mount, 3.05 mm × 2.85 mm footprint with exposed drain pad for thermal and electrical performance |
Pinout & Package
TSOP-6 package with 6-pin leadframe, JEDEC MO-193C compliant. Dimensions: 3.05 mm × 2.85 mm × 1.05 mm (L × W × H); 0.95 mm pitch; exposed drain pad on bottom for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel terminals reduce package inductance and thermal resistance; connected internally to die drain and exposed pad |
| 3 | Gate (G) | Control input requiring ≤±12 V; 9.5 Ω typical gate resistance limits ringing in high-speed switching |
| 4 | Source (S) | Reference node for gate drive; connects to system ground or load return path in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon technology | Delivers 20% lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| 100% Rg tested | Ensures consistent gate resistance (5–16.2 Ω), minimizing variation in rise/fall times across production lots |
| Low VGS(th) distribution | Narrow -0.6 V to -1.4 V range guarantees turn-on with 2.5 V logic without margin risk |
| Exposed drain pad | Provides direct thermal path to PCB copper, reducing RthJA by ~35% compared to non-exposed variants |
| Pb-free and halogen-free | Complies with RoHS 2011/65/EU and IEC 61249-2-21, supporting green manufacturing requirements |
Applications
| USB Power Delivery Sink | Reverse-Polarity Protection |
|---|---|
Use Scenario: Integrated into USB-C receptacle circuits to regulate 5–20 V input before downstream DC-DC conversion. IC Role / Device Role / Timing Role: Low-side load switch controlling power path from connector to PMIC; responds within 35 ns rise time to enable/disable sequencing. Use Value: 0.060 Ω RDS(on) limits voltage drop to <280 mV at 4.7 A, preserving bus voltage margin for PD negotiation. | Use Scenario: Placed in series with VIN line to block reverse current when external adapter is misconnected. IC Role / Device Role / Timing Role: P-channel high-side switch configured with gate tied to VIN through resistor divider; conducts only during correct polarity. Use Value: -20 V VDS rating withstands ±20 V fault transients; body diode forward voltage of -0.8 V (typ) minimizes conduction loss during normal operation. |
| Smart E-Fuse for Portable Devices | Hot-Swap Controller Interface |
Use Scenario: Monitored by current-sense amplifier and MCU to implement programmable overcurrent shutdown in tablets and wearables. IC Role / Device Role / Timing Role: Primary power switch actuated by digital enable signal; supports fast fault response (<100 ns off-time). Use Value: 6 nC Qg enables sub-microsecond turn-off with standard GPIO drivers, meeting IEC 62368-1 energy-limiting requirements. | Use Scenario: Used in conjunction with hot-swap controller ICs (e.g., LTC4215) to isolate backplane slots during live insertion. IC Role / Device Role / Timing Role: External pass element controlled by controller's gate driver output; handles inrush current limiting and steady-state conduction. Use Value: 0.090 Ω RDS(on) at -2.7 V VGS ensures stable gate drive from 3.3 V controllers without boost circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3457DV-T1-GE3 | -30 V VDS, 0.042 Ω RDS(on) @ -4.5 V, higher Qg (8.5 nC), same TSOP-6 package | Better voltage margin for 24 V industrial rails; higher gate charge increases drive complexity | Select when >20 V system tolerance is required and gate drive strength permits higher Qg |
| DMN2020LFG-7 | -20 V VDS, 0.055 Ω RDS(on) @ -4.5 V, 5.5 nC Qg, 2 mm × 2 mm DFN package | Smaller footprint but no exposed drain pad; RthJA = 125 °C/W limits power handling | Select for ultra-compact layouts where thermal budget allows ≤0.7 W continuous dissipation |
Compared with Si3457DV-T1-GE3 and DMN2020LFG-7, the SI3443BDV-T1-BE3 offers optimal balance of 20 V rating, 6 nC gate charge, and 90 °C/W thermal resistance in a proven TSOP-6 form factor-making it preferred for cost-sensitive, thermally constrained USB and portable power designs.
Availability
SI3443BDV-T1-BE3 is available at Aetrix Electronics and suitable for USB-C power delivery sinks, reverse-polarity protection circuits, and smart e-fuse implementations requiring stable component supply and long-term manufacturability.
Supply support for SI3443BDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI3443BDV-T1-BE3 belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for low-voltage, high-density power switching in portable and interface-critical applications.
FAQ
What is the maximum continuous drain current for SI3443BDV-T1-BE3 at 70 °C ambient temperature?
The SI3443BDV-T1-BE3 supports -2.8 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package on standard FR4 PCBs without forced airflow. The SI3443BDV-T1-BE3 maintains safe junction temperatures below 150 °C under these conditions when mounted per recommended land pattern.
Does SI3443BDV-T1-BE3 require a gate pull-up resistor in high-side switch configuration?
Yes - in high-side configuration, SI3443BDV-T1-BE3 requires an external gate pull-up resistor to VIN to ensure proper turn-on. Since it is a P-channel MOSFET, the gate must be driven below the source potential; the SI3443BDV-T1-BE3's -1.4 V maximum VGS(th) means gate voltage must be ≥1.4 V below source to guarantee conduction. A resistor divider or dedicated gate driver is needed for precise control.
Can SI3443BDV-T1-BE3 be used with 1.8 V logic-level microcontrollers?
No - the SI3443BDV-T1-BE3 is not guaranteed to fully enhance with 1.8 V gate drive. Its VGS(th) range is -0.6 V to -1.4 V, and RDS(on) is characterized down to -2.5 V VGS. At -1.8 V, the device may operate in linear region with elevated RDS(on) (>0.15 Ω), causing excessive heating. For 1.8 V systems, consider a MOSFET with ≤-1.0 V max VGS(th) or use a level shifter with the SI3443BDV-T1-BE3.
What is the thermal resistance from junction to foot (RthJF) for SI3443BDV-T1-BE3?
The SI3443BDV-T1-BE3 has a typical junction-to-foot thermal resistance (RthJF) of 30 °C/W and a maximum of 36 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die directly to the exposed drain pad, enabling effective thermal coupling to PCB copper planes. It is distinct from RthJA and critical for estimating localized temperature rise in high-pulse-current applications.
Is SI3443BDV-T1-BE3 suitable for reverse battery protection in automotive infotainment systems?
The SI3443BDV-T1-BE3 is rated for -55 °C to +150 °C operating junction temperature and meets AEC-Q101 stress test requirements per Vishay qualification reports. However, its -20 V VDS rating provides only marginal margin against automotive load-dump transients (up to +40 V). For robust automotive reverse-battery protection, a -40 V or higher rated P-channel MOSFET is recommended; the SI3443BDV-T1-BE3 is best suited for consumer-grade 5–12 V systems.
SI3443BDV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3443BDV-T1-BE3 FAQ
1.How can I place an order for SI3443BDV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3443BDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3443BDV-T1-BE3 reliable?
The price and inventory of SI3443BDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3443BDV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3443BDV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3443BDV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3443BDV-T1-BE3?
SI3443BDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3443BDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3443BDV-T1-BE3?
For technical support, including SI3443BDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3443BDV-T1-BE3 requirements.
6.How does Aetrix verify that SI3443BDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3443BDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3443BDV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3443BDV-T1-BE3?
All SI3443BDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3443BDV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3443BDV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3443BDV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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