Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3443BDV-T1-E3

Name: SI3443BDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3443BDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI3443BDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3443BDV-T1-E3.pdf

Description:: MOSFET P-CH 20V 3.6A 6TSOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,262

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI3443BDV-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in TSOP-6 package, rated for -20 V V_DS, 0.060 Ω R_DS(on) at -4.5 V V_GS, and -4.7 A continuous drain current; used in load switching and power management circuits in portable electronics and DC-DC converters.

For engineers reviewing the SI3443BDV-T1-E3 datasheet, SI3443BDV-T1-E3 pinout, SI3443BDV-T1-E3 application, or SI3443BDV-T1-E3 equivalent, key selection criteria include low-threshold gate drive compatibility with 2.5 V logic, fast 22 ns turn-on delay, and thermal resistance of 90 °C/W (steady-state junction-to-ambient) for compact board layouts.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with a gate threshold voltage range of -0.6 V to -1.4 V, enabling direct interface with low-voltage microcontrollers. Its trench-based silicon structure delivers low Q_g (6 nC typ.) and high transconductance (11 S typ.), supporting efficient high-frequency switching up to several hundred kHz.

The integrated body diode exhibits V_SD = -0.8 V typ. at -1.7 A, suitable for synchronous rectification and reverse polarity protection. Thermal design is constrained by R_thJA = 90 °C/W (steady-state) and R_thJF = 30 °C/W, requiring careful PCB copper area allocation per Vishay's recommended land pattern.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for low-voltage DC systems
R_DS(on) @ -4.5 V	0.060 Ω max - Enables <150 mW conduction loss at 4.7 A, critical for thermally constrained designs
I_D (continuous)	-4.7 A @ T_J = 150 °C - Supports sustained load currents in handheld and battery-powered applications
Q_g	6 nC typ. - Reduces gate drive power and enables fast 22 ns turn-on delay with low-R_g drivers
V_GS(th)	-0.6 to -1.4 V - Ensures reliable turn-on with 2.5 V–3.3 V logic-level gate signals
T_J range	-55 to +150 °C - Qualified for industrial and extended-temperature embedded environments
R_thJA	90 °C/W (steady-state) - Dictates minimum 1-in² 2-oz copper pad requirement on FR4 for thermal compliance

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.00 mm, with exposed drain paddle for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; internally connected to exposed thermal pad for heat dissipation
3	Gate (G)	Control input; requires ≤±12 V rating and low-impedance drive due to 5–16.2 Ω gate resistance
4	Source (S)	Reference node for gate drive; connects to system ground or positive rail depending on high-side/low-side topology

Key Features

Feature	Design Value
TrenchFET® silicon technology	Delivers 20 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size, improving power density
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch variation in switching speed
Low V_GS(th) range	Guarantees full enhancement with 2.5 V logic, eliminating need for gate boosters in portable systems
Integrated body diode	Enables reverse-polarity protection and freewheeling without external diode, reducing BOM count
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting green manufacturing

Applications

Battery-Powered Load Switch	USB Port Power Management
Use Scenario: Enabling/disabling power to peripherals in smartphones and tablets during sleep/wake cycles. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling VBUS path with fast 22 ns turn-on for responsive power sequencing. Use Value: 0.060 Ω R_DS(on) limits dropout to <280 mV at 4.7 A, preserving USB 2.0 voltage margin while minimizing self-heating.	Use Scenario: Reverse-voltage protection and overcurrent limiting on downstream USB ports in docking stations. IC Role / Device Role / Timing Role: High-side reverse-polarity guard with integrated body diode conducting forward during normal operation. Use Value: V_SD = -0.8 V typ. ensures <1.3 V total drop across switch+diode, meeting USB 3.0 5 V tolerance requirements.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Node Power Gating
Use Scenario: Replacing Schottky diodes in buck converter outputs for improved efficiency at light loads. IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch driven by controller PWM signal with matched timing. Use Value: Q_g = 6 nC allows clean 500 kHz switching with minimal gate driver loss, raising conversion efficiency by ≥3 % at 1 A.	Use Scenario: Isolating sensor supply rails in wireless IoT nodes to extend battery life during deep-sleep modes. IC Role / Device Role / Timing Role: Ultra-low-leakage power switch with IDSS ≤ -1 μA at -20 V, minimizing standby current drain. Use Value: -55 to +150 °C operating range supports outdoor deployment without derating, maintaining <100 nA leakage at 70 °C.

Battery-Powered Load Switch

USB Port Power Management

Use Scenario: Enabling/disabling power to peripherals in smartphones and tablets during sleep/wake cycles.

IC Role / Device Role / Timing Role: Low-side P-channel switch controlling VBUS path with fast 22 ns turn-on for responsive power sequencing.

Use Value: 0.060 Ω R_DS(on) limits dropout to <280 mV at 4.7 A, preserving USB 2.0 voltage margin while minimizing self-heating.

Use Scenario: Reverse-voltage protection and overcurrent limiting on downstream USB ports in docking stations.

IC Role / Device Role / Timing Role: High-side reverse-polarity guard with integrated body diode conducting forward during normal operation.

Use Value: V_SD = -0.8 V typ. ensures <1.3 V total drop across switch+diode, meeting USB 3.0 5 V tolerance requirements.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Replacing Schottky diodes in buck converter outputs for improved efficiency at light loads.

IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch driven by controller PWM signal with matched timing.

Use Value: Q_g = 6 nC allows clean 500 kHz switching with minimal gate driver loss, raising conversion efficiency by ≥3 % at 1 A.

Use Scenario: Isolating sensor supply rails in wireless IoT nodes to extend battery life during deep-sleep modes.

IC Role / Device Role / Timing Role: Ultra-low-leakage power switch with IDSS ≤ -1 μA at -20 V, minimizing standby current drain.

Use Value: -55 to +150 °C operating range supports outdoor deployment without derating, maintaining <100 nA leakage at 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3457DV-T1-E3	R_DS(on) = 0.042 Ω @ -4.5 V, but higher Q_g = 9.5 nC and larger TSOP-6 footprint (3.05 × 2.85 mm vs. identical)	Better conduction loss at high current; less suitable for high-frequency switching due to slower 35 ns t_d(off)	Choose Si3457DV-T1-E3 only when thermal headroom is limited and switching frequency <200 kHz.
DMN2020LFG-7	Same -20 V rating but N-channel; requires level-shifting gate drive and has R_DS(on) = 0.035 Ω @ -4.5 V	Enables higher efficiency in high-side configurations only with bootstrap or charge-pump circuitry	Select DMN2020LFG-7 only if N-channel topology is already implemented and gate drive complexity is acceptable.

Compared with SI3443BDV-T1-E3, Si3457DV-T1-E3 offers lower conduction loss but sacrifices switching speed, while DMN2020LFG-7 demands additional gate-drive circuitry-making SI3443BDV-T1-E3 optimal for cost-sensitive, low-component-count 2.5 V–3.3 V logic-driven load switches.

Availability

SI3443BDV-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, USB power management, and DC-DC converter synchronous rectification requiring stable component supply and RoHS-compliant packaging.

Supply support for SI3443BDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SI3443BDV-T1-E3 belongs to Vishay's TrenchFET® P-channel logic-level MOSFET family, engineered for low-voltage power control in space-constrained portable and industrial electronics.

FAQ

What is the maximum continuous drain current rating for SI3443BDV-T1-E3 at 70 °C ambient temperature?

The SI3443BDV-T1-E3 supports -2.8 A continuous drain current at T_A = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under natural convection; actual current capability increases with PCB copper area and airflow. The SI3443BDV-T1-E3 must be mounted per Vishay's recommended land pattern to achieve this rating.

Does SI3443BDV-T1-E3 require a gate resistor for ESD protection or switching stability?

The SI3443BDV-T1-E3 does not require an external gate resistor for ESD protection, as it features built-in gate oxide robustness and 100 % R_g testing. However, a small series gate resistor (typically 5–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and prevent unintended oscillation during fast edge transitions. This improves reliability without compromising the SI3443BDV-T1-E3's 22 ns turn-on delay.

Can SI3443BDV-T1-E3 be used in high-side switch configurations with 3.3 V microcontroller GPIO?

Yes, SI3443BDV-T1-E3 is specifically designed for high-side switching with 3.3 V (and even 2.5 V) logic-level gate drive due to its -0.6 V to -1.4 V V_GS(th) range. When used as a high-side switch, the source connects to the positive rail and the gate is pulled down relative to source via the MCU GPIO. The SI3443BDV-T1-E3 achieves full enhancement at V_GS = -2.5 V, ensuring low R_DS(on) without external level shifters.

What is the safe operating area (SOA) limitation for SI3443BDV-T1-E3 at DC conditions?

At DC, the SI3443BDV-T1-E3 SOA is limited by its R_DS(on)-based conduction boundary and maximum power dissipation of 1.1 W at T_A = 25 °C. For example, at V_DS = -10 V, the safe continuous current is capped at ~110 mA to avoid exceeding P_D = 1.1 W. Derating is required above 25 °C ambient, and the SI3443BDV-T1-E3 must be evaluated against its published SOA curve in Figure 10 of the datasheet for pulsed conditions.

Is SI3443BDV-T1-E3 suitable for reverse polarity protection in automotive infotainment systems?

The SI3443BDV-T1-E3 is rated for -55 to +150 °C junction temperature and supports reverse polarity protection, but it is not AEC-Q101 qualified. While its electrical specs meet many 12 V automotive subsystem requirements (e.g., V_DS = -20 V, I_D = -4.7 A), the SI3443BDV-T1-E3 lacks automotive-grade qualification and stress-test validation. For production automotive infotainment systems, a qualified alternative such as the SQJ852EP should be selected instead of the SI3443BDV-T1-E3.

SI3443BDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3443BDV-T1-E3 FAQ

1.How can I place an order for SI3443BDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3443BDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3443BDV-T1-E3 reliable?

The price and inventory of SI3443BDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3443BDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3443BDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3443BDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3443BDV-T1-E3?

SI3443BDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3443BDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3443BDV-T1-E3?

For technical support, including SI3443BDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3443BDV-T1-E3 requirements.

6.How does Aetrix verify that SI3443BDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3443BDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3443BDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3443BDV-T1-E3?

All SI3443BDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3443BDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3443BDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3443BDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …