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Vishay Siliconix SI3443BDV-T1-GE3
- Part No.:
- SI3443BDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3443BDV-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 3.6A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,642
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Product details
Overview
SI3443BDV-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in TSOP-6 package, rated for -20 V VDS, 0.060 Ω RDS(on) at -4.5 V VGS, and -4.7 A continuous drain current at TJ = 150 °C. It serves as a low-side load switch in compact DC-DC power rails and USB port protection circuits.
For engineers reviewing the SI3443BDV-T1-GE3 datasheet, SI3443BDV-T1-GE3 pinout, SI3443BDV-T1-GE3 application, or SI3443BDV-T1-GE3 equivalent, key selection criteria include its -2.5 V logic-level gate drive compatibility, 6 nC total gate charge for fast switching, and thermal resistance of 90 °C/W (steady-state junction-to-ambient) in surface-mount FR4 layouts.
Technical Context
This device employs a trench-gate silicon process optimized for low RDS(on) at low gate voltages, with guaranteed VGS(th) between -0.6 V and -1.4 V to ensure reliable turn-on with 2.5 V–3.3 V control logic. Its body diode exhibits VSD = -0.8 V at -1.7 A, supporting synchronous rectification in buck converters.
The TSOP-6 package integrates four drain terminals (pins 1, 2, 5, 6), one source (pin 4), and one gate (pin 3), enabling high-current conduction paths and reduced PCB trace inductance. Thermal performance is validated per JEDEC MO-193C standard with RthJF = 30 °C/W (junction-to-foot).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 24 V rail protection and reverse-polarity input stages |
| RDS(on) @ -4.5 V | 0.060 Ω - Enables ≤270 mW conduction loss at -4.7 A, suitable for thermally constrained portable designs |
| Qg | 6 nC - Supports >1 MHz PWM switching with minimal gate driver power demand |
| ID (TJ = 150 °C) | -4.7 A - Continuous current rating under worst-case thermal conditions on standard FR4 |
| VGS(th) | -0.6 to -1.4 V - Ensures full enhancement with 2.5 V microcontroller GPIO without level-shifting |
| RthJA (steady state) | 90 °C/W - Predicts ~40 °C junction rise above ambient at 1.1 W dissipation on 1-in² copper pad |
Pinout & Package
TSOP-6 package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 1.05 mm max height. Exposed drain paddle enhances thermal transfer to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain connections reduce package inductance and improve current sharing in high-di/dt applications |
| 3 | Gate (G) | Single gate input with 5–16.2 Ω internal gate resistance - limits ringing and simplifies external gate resistor selection |
| 4 | Source (S) | Common source node for load return path; ties directly to system ground or negative rail reference |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit (0.36 Ω·nC) for high-efficiency switching at low voltage |
| 100 % Rg tested | Guarantees gate resistance between 5 Ω and 16.2 Ω - eliminates need for external gate damping in most layouts |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E - supports green manufacturing and end-of-life recycling |
| Low VGS(th) distribution | Narrow threshold range (-0.6 V to -1.4 V) ensures consistent turn-on timing across production lots and temperature |
Applications
| USB Port Protection | Load Switch for IoT Sensors |
|---|---|
Use Scenario: Preventing backfeed and overcurrent damage when hot-plugging USB peripherals into embedded hosts. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as an ON/OFF power gate controlled by host MCU GPIO. Use Value: -2.5 V logic compatibility enables direct 3.3 V MCU control; 0.060 Ω RDS(on) limits voltage drop to <150 mV at 2.5 A load. | Use Scenario: Power gating discrete sensors (e.g., temperature, humidity) in battery-powered edge nodes to minimize standby leakage. IC Role / Device Role / Timing Role: High-side or low-side load switch isolating sensor supply rail during sleep mode. Use Value: -1 μA IDSS at -20 V ensures <100 nA system leakage; fast 22 ns td(on) enables rapid wake-up response. |
| Reverse-Polarity Input Protection | Hot-Swap Controller Auxiliary Switch |
Use Scenario: Blocking reverse-connected input power sources in industrial 12–24 V DC systems. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive input rail to block reverse current flow. Use Value: -20 V VDS rating provides 2× margin over 12 V nominal; body diode forward voltage (-0.8 V) minimizes forward drop during normal operation. | Use Scenario: Current-limiting and inrush control during live insertion of modular boards in telecom chassis. IC Role / Device Role / Timing Role: Secondary switch in conjunction with dedicated hot-swap controller IC to handle peak fault currents. Use Value: -20 A pulsed drain rating (IDM) withstands short-duration inrush surges; 0.090 Ω RDS(on) at -2.7 V enables use with controller's gate drive output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3442BDV-T1-GE3 | RDS(on) = 0.085 Ω @ -4.5 V; higher threshold (-0.7 to -1.5 V); same TSOP-6 package | Slightly higher conduction loss; identical pinout and footprint | Select when lower gate charge (5.5 nC) is prioritized over RDS(on) in high-frequency switching |
| DMN2020LFG-7 | RDS(on) = 0.055 Ω @ -4.5 V; 20 V rating; SOT-23-6 package (smaller, higher RthJA = 120 °C/W) | Higher power density but reduced thermal headroom; not drop-in due to different land pattern | Choose for space-constrained designs where 0.5 W max dissipation is acceptable and layout revision is feasible |
Compared with Si3442BDV-T1-GE3, SI3443BDV-T1-GE3 offers lower RDS(on) for reduced conduction loss in high-current loads; versus DMN2020LFG-7, it provides superior thermal management via TSOP-6's lower RthJA and larger copper area, critical for sustained 4.7 A operation.
Availability
SI3443BDV-T1-GE3 is available at Aetrix Electronics and suitable for USB power delivery, industrial sensor load switching, and reverse-polarity protection requiring stable component supply across long-lifecycle embedded programs.
Supply support for SI3443BDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The Si3443BDV belongs to Vishay's TrenchFET® Gen III P-channel logic-level MOSFET family, engineered for low-voltage DC-DC conversion, load switching, and power management in space- and thermally-constrained applications.
FAQ
What is the maximum continuous drain current for SI3443BDV-T1-GE3 at 70 °C ambient?
The SI3443BDV-T1-GE3 supports -2.8 A continuous drain current at TA = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package on standard FR4 PCBs without forced airflow or heatsinking. At TA = 25 °C, the rating increases to -3.6 A.
Does SI3443BDV-T1-GE3 require a gate driver for 3.3 V microcontroller interfacing?
No, SI3443BDV-T1-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller. Its VGS(th) range of -0.6 V to -1.4 V ensures full enhancement at -3.3 V gate-source voltage, and its 6 nC Qg allows direct GPIO driving with minimal slew rate limitation in typical load-switch configurations.
What is the safe operating area (SOA) limitation for SI3443BDV-T1-GE3 in single-pulse conditions?
In single-pulse conditions, the SI3443BDV-T1-GE3 SOA is limited by RDS(on) at high current/low voltage, by avalanche energy at high voltage/low current, and by peak pulse current (IDM = -20 A) at very short durations. The datasheet Figure 13 shows that at VDS = -10 V, it sustains up to -4 A for 10 ms without exceeding TJ(max) = 150 °C.
How does the body diode performance of SI3443BDV-T1-GE3 impact synchronous rectification use?
The SI3443BDV-T1-GE3 body diode has VSD = -0.8 V at -1.7 A and trr = 25–50 ns, making it suitable for low-frequency synchronous rectification in buck converters below 500 kHz. Its low forward voltage reduces conduction loss compared to Schottky alternatives, though its reverse recovery time requires careful dead-time tuning to avoid shoot-through.
Is SI3443BDV-T1-GE3 qualified for automotive applications per AEC-Q101?
No, SI3443BDV-T1-GE3 is not AEC-Q101 qualified. Vishay's official documentation lists it under general-purpose industrial and consumer power management applications. For automotive-grade equivalents, refer to Vishay's AEC-Q101-qualified TrenchFET® portfolio such as the SQ2342EV or SI3457DV families.
SI3443BDV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3443BDV-T1-GE3 FAQ
1.How can I place an order for SI3443BDV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3443BDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3443BDV-T1-GE3 reliable?
The price and inventory of SI3443BDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3443BDV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3443BDV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3443BDV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3443BDV-T1-GE3?
SI3443BDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3443BDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3443BDV-T1-GE3?
For technical support, including SI3443BDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3443BDV-T1-GE3 requirements.
6.How does Aetrix verify that SI3443BDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3443BDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3443BDV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3443BDV-T1-GE3?
All SI3443BDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3443BDV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3443BDV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3443BDV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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