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Vishay Siliconix SI3447CDV-T1-GE3
- Part No.:
- SI3447CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3447CDV-T1-GE3.pdf
- Description:
- MOSFET P-CH 12V 7.8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,178
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Product details
Overview
SI3447CDV-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for low-voltage load switching in space-constrained applications, featuring -12 V VDS, 0.036 Ω RDS(on) at -4.5 V VGS, and -7.8 A continuous drain current at TC = 25 °C. It operates as a high-side switch in battery-powered portable electronics and power management circuits.
For engineers reviewing the SI3447CDV-T1-GE3 datasheet, SI3447CDV-T1-GE3 pinout, SI3447CDV-T1-GE3 application, or SI3447CDV-T1-GE3 equivalent, key selection criteria include its halogen-free TSOP-6 package, PWM-optimized gate charge (12 nC at -4.5 V), body diode recovery characteristics (trr = 35–55 ns), and thermal resistance (RthJA = 55 °C/W).
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its -1.0 V typical VGS(th) enables operation from low-voltage logic rails (e.g., 1.8 V, 2.5 V, 4.5 V), and its optimized Ciss/Coss ratio (910 pF / 260 pF) supports efficient PWM control in DC-DC converters and load switches.
The TSOP-6 package integrates four parallel drain terminals (pins 1, 2, 5, 6) for enhanced current handling and thermal conduction to the PCB, while the single gate (pin 3) and source (pin 4) provide compact, unambiguous control interface. The device's body diode exhibits VSD = -0.8 to -1.2 V at -5 A, supporting synchronous rectification or reverse polarity protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum drain-source blocking voltage; suitable for 12 V rail and lower battery systems including Li-ion (≤4.2 V/cell) and USB PD designs. |
| RDS(on) | 0.036 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 6.3 A, critical for thermally constrained portable PCBs. |
| ID (continuous) | -7.8 A at TC = 25 °C - Supports high-current load switching without external heatsink when mounted on ≥1"×1" FR4 board. |
| Qg | 12 nC at VGS = -4.5 V - Low gate charge reduces driver power and switching losses in high-frequency (>500 kHz) PWM applications. |
| trr | 35–55 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in bidirectional or flyback configurations. |
| RthJA | 55 °C/W - Junction-to-ambient thermal resistance defines maximum power dissipation (2.0 W at TA = 25 °C) under standard PCB layout. |
| VGS(th) | -0.4 to -1.0 V - Guaranteed turn-on threshold allows reliable gate drive from 1.8 V microcontrollers and low-voltage logic outputs. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, with exposed drain pad for thermal conduction. Pin 1–2–5–6 are internally connected to drain; pin 3 is gate; pin 4 is source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel terminals electrically and thermally tied to MOSFET die drain; must be connected to large copper pour for heat spreading and low-inductance current path. |
| 3 | Gate (G) | Control input requiring ≤±8 V drive; low input capacitance (Ciss = 910 pF) enables direct drive from most MCU GPIOs with series resistor. |
| 4 | Source (S) | Reference node for gate drive; connects to system ground or positive rail depending on high-side/low-side configuration; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Power MOSFET | Enables ultra-low RDS(on) in small TSOP-6 package, reducing conduction loss and board area vs. SO-8 alternatives. |
| PWM Optimized | Low Qg/Qgd ratio (12 nC / 3.4 nC) ensures clean, fast switching with minimal Miller-induced oscillation in duty-cycle-controlled loads. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer, medical, and industrial products requiring green material compliance. |
| Enhanced thermal performance | RthJF = 34 °C/W (junction-to-foot) enables effective heat transfer to PCB copper, supporting >2 W dissipation with proper layout. |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
|
Use Scenario: Controlling power delivery to USB-C accessory ports in smartphones and tablets, enabling hot-plug detection and overcurrent shutdown. IC Role / Device Role / Timing Role: High-side load switch managing VBUS enable/disable with fast turn-off (<30 ns fall time) to prevent fault propagation. Use Value: 0.036 Ω RDS(on) limits voltage drop to <230 mV at 6.3 A, preserving USB-C voltage compliance; halogen-free construction meets mobile OEM environmental requirements. |
Use Scenario: Reverse polarity and overvoltage protection in USB-C receptacles where VBUS may be driven by host or peripheral. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode or back-to-back switch to block reverse current and isolate faults. Use Value: Body diode VSD = -0.8 to -1.2 V ensures low forward drop during reverse-bias clamping; trr ≤55 ns prevents latch-up during transient events. |
| Wireless Headset Battery Switching | Industrial Sensor Node Power Gating |
|
Use Scenario: Isolating lithium-polymer battery from Bluetooth audio circuitry during deep sleep to reduce quiescent current below 1 µA. IC Role / Device Role / Timing Role: Load switch controlled by MCU GPIO, leveraging -1.0 V VGS(th) for reliable turn-on from 1.8 V I/O. Use Value: IDSS ≤ -1 µA at VDS = -12 V ensures <100 nA leakage in off-state, extending battery life beyond 30 days in standby. |
Use Scenario: Power gating of analog front-end and RF transceiver in battery-operated industrial IoT sensors deployed in remote locations. IC Role / Device Role / Timing Role: High-reliability load switch rated for -55 to +150 °C operating range, with guaranteed RDS(on) stability across temperature. Use Value: RDS(on) variation <15% from -55 °C to +125 °C (normalized curve) ensures consistent power budgeting across extended temperature environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3457DV-T1-GE3 | Same TSOP-6 package, but -20 V VDS, higher RDS(on) (0.055 Ω @ -4.5 V), lower ID (-4.5 A) | Better suited for 15–20 V industrial rails; less optimal for 5–12 V portable systems due to higher conduction loss | Select when higher voltage margin is required and lower current capacity is acceptable |
| DMN2053LFG-7 | 6-pin SOT-23 package, -20 V VDS, 0.052 Ω RDS(on) @ -4.5 V, -4.2 A ID; smaller footprint but higher RthJA (125 °C/W) | Space-constrained designs where board area is prioritized over thermal performance; not recommended for >2 W continuous dissipation | Choose only for ultra-low-power (<1 A) applications where PCB real estate is more critical than thermal headroom |
Compared with SI3447CDV-T1-GE3, Si3457DV-T1-GE3 trades voltage rating for reduced current capability and higher on-resistance, while DMN2053LFG-7 sacrifices thermal robustness for miniaturization-neither offers pin compatibility or identical electrical behavior.
Availability
SI3447CDV-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and wireless headset battery switching requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SI3447CDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability, and environmentally compliant components.
The Si3447CDV belongs to Vishay's TrenchFET® Gen III P-channel MOSFET product line, engineered specifically for low-voltage, high-current load switching in portable and battery-powered systems where thermal density and green materials are critical.
FAQ
What is the maximum continuous drain current for SI3447CDV-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI3447CDV-T1-GE3 is -6.2 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions. SI3447CDV-T1-GE3 maintains stable RDS(on) performance across this range due to its TrenchFET® structure.
Does SI3447CDV-T1-GE3 support 1.8 V logic-level gate drive?
Yes, SI3447CDV-T1-GE3 supports 1.8 V logic-level gate drive: its VGS(th) is specified from -0.4 V to -1.0 V, and RDS(on) = 0.068 Ω is guaranteed at VGS = -1.8 V with ID = -1.5 A. This enables direct interface with 1.8 V microcontrollers without level-shifting. SI3447CDV-T1-GE3 delivers usable on-resistance even at sub-2 V gate voltages, making it suitable for ultra-low-power systems.
What is the thermal resistance from junction to ambient (RthJA) for SI3447CDV-T1-GE3 under standard mounting conditions?
The junction-to-ambient thermal resistance (RthJA) for SI3447CDV-T1-GE3 is 55 °C/W (typical) and 62.5 °C/W (maximum), measured on a 1" × 1" FR4 board per JEDEC JESD51-2. This value assumes standard reflow-soldered mounting with no additional heatsink. SI3447CDV-T1-GE3 achieves this performance via its four-drain-pin TSOP-6 layout, which maximizes copper connection area for heat spreading.
Is SI3447CDV-T1-GE3 suitable for reverse polarity protection applications?
Yes, SI3447CDV-T1-GE3 is commonly used for reverse polarity protection in 12 V and lower systems. Configured as a high-side switch with source tied to input and drain to load, it blocks reverse current flow while allowing forward conduction with low VSD (-0.8 to -1.2 V). SI3447CDV-T1-GE3's fast body diode recovery (trr = 35–55 ns) prevents latch-up during polarity transients, enhancing system reliability.
How does the halogen-free status of SI3447CDV-T1-GE3 impact its manufacturing and compliance?
SI3447CDV-T1-GE3 complies with IEC 61249-2-21 for halogen-free printed wiring board materials and meets RoHS Directive 2002/95/EC. Its halogen-free designation means brominated flame retardants and chlorine-based compounds are excluded from molding compound and leadframe plating. SI3447CDV-T1-GE3 is certified for use in consumer electronics, medical devices, and industrial equipment requiring strict environmental material declarations.
SI3447CDV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 6.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 910 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3447CDV-T1-GE3 FAQ
1.How can I place an order for SI3447CDV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3447CDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3447CDV-T1-GE3 reliable?
The price and inventory of SI3447CDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3447CDV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3447CDV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3447CDV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3447CDV-T1-GE3?
SI3447CDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3447CDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3447CDV-T1-GE3?
For technical support, including SI3447CDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3447CDV-T1-GE3 requirements.
6.How does Aetrix verify that SI3447CDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3447CDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3447CDV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3447CDV-T1-GE3?
All SI3447CDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3447CDV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3447CDV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3447CDV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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