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Vishay Siliconix SI3454CDV-T1-GE3
- Part No.:
- SI3454CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3454CDV-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 4.2A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,589
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Product details
Overview
SI3454CDV-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 4.2 A continuous drain current at TC = 25 °C, and 0.050 Ω RDS(on) at VGS = 10 V. It serves as a low-side load switch in portable computing power rails.
For engineers reviewing the SI3454CDV-T1-GE3 datasheet, SI3454CDV-T1-GE3 pinout, SI3454CDV-T1-GE3 application, or SI3454CDV-T1-GE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (RthJA = 100 °C/W max), gate charge (2.6 nC typ. at 4.5 V), and body diode recovery (trr = 17.8 ns max).
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching characteristics. Its 0.079 Ω RDS(on) at 4.5 V gate drive supports logic-level control in battery-powered systems, while the integrated source-drain diode enables synchronous rectification in DC-DC converters.
The device features 100 % Rg tested gate resistance (0.44–4.4 Ω), enabling predictable turn-on/turn-off timing (td(on) = 20 ns max at 4.5 V). Thermal design is supported by junction-to-foot (RthJF = 85 °C/W max) and junction-to-ambient (RthJA = 100 °C/W max) ratings under standard FR4 mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 3.3 V/5 V rail switching |
| RDS(on) | 0.050 Ω @ VGS = 10 V - Enables <150 mW conduction loss at 3.8 A |
| ID (Cont.) | 4.2 A @ TC = 25 °C - Sustains full load in compact notebook PC power stages |
| Qg | 2.6 nC @ VGS = 4.5 V - Supports efficient 1–2 MHz PWM operation with minimal gate drive power |
| trr | 17.8 ns - Limits reverse recovery loss in buck converter freewheeling paths |
| RthJA | 100 °C/W - Defines thermal derating for surface-mount layout on 1" × 1" FR4 board |
Pinout & Package
TSOP-6 surface-mount package (3.0 mm × 2.85 mm) with exposed drain pad for thermal enhancement. Pin 1–2–5–6 are drain terminals; Pin 3 is source; Pin 4 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; electrically and thermally tied to exposed pad |
| 3 | Source (S) | Power return path; referenced to ground in low-side switch configuration |
| 4 | Gate (G) | CMOS-compatible control input; requires ≤10 V drive for full enhancement |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30 % lower RDS(on) vs. planar MOSFETs of same die size, reducing conduction loss in space-constrained PCBs |
| 100 % Rg tested | Ensures consistent switching speed across production lots, critical for timing-critical load-switch sequencing |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment |
| Low Qgd / Qgs ratio | 0.8 nC / 1.2 nC enables clean Miller plateau transition, minimizing shoot-through risk in half-bridge layouts |
Applications
| Notebook PC Load Switch | USB-C Power Delivery Sink |
|---|---|
Use Scenario: Controls 5 V or 3.3 V auxiliary rail power-up sequence during system boot. IC Role / Device Role / Timing Role: Low-side N-channel switch driven by GPIO or PMIC enable signal. Use Value: 0.079 Ω RDS(on) at 4.5 V ensures <100 mW loss at 3.1 A, supporting fanless thermal design. | Use Scenario: Enables/disables VBUS path after PD contract negotiation completes. IC Role / Device Role / Timing Role: Bidirectional current-capable switch with fast turn-off (tf = 18 ns max) for fault isolation. Use Value: 17.8 ns trr and 0.8 V VSD minimize forward conduction loss during dead-time transitions. |
| DC-DC Synchronous Rectifier | Industrial Sensor Node Power Gating |
Use Scenario: Replaces Schottky diode in buck converter output stage for improved efficiency. IC Role / Device Role / Timing Role: Synchronously commutated low-side switch controlled by controller PWM signal. Use Value: 2.6 nC Qg at 4.5 V reduces gate driver power consumption versus higher-Qg alternatives. | Use Scenario: Powers down wireless transceiver or analog front-end between measurement cycles. IC Role / Device Role / Timing Role: Standby-mode load switch with <1 µA IDSS leakage at 30 V. Use Value: 1 µA max zero-bias leakage preserves battery life over multi-week sleep intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI3453CDV-T1-GE3 | Lower RDS(on): 0.035 Ω @ 10 V; higher ID: 5.2 A; same TSOP-6 package | Better suited for higher-current rails (>4 A); identical pinout and footprint | Select when conduction loss must be minimized below 100 mW at >4 A load |
| DMN3028LSD-13 | Higher RDS(on): 0.065 Ω @ 4.5 V; different SO-8 package; 30 V rating | Requires PCB redesign due to SO-8 footprint; offers higher thermal mass for sustained 3.5 A loads | Choose only if existing SO-8 layout prevents TSOP-6 adoption and thermal margin allows 0.065 Ω loss |
Compared with SI3454CDV-T1-GE3, SI3453CDV-T1-GE3 delivers lower conduction loss without layout change, while DMN3028LSD-13 trades footprint compatibility for higher thermal inertia-making it viable only where board rework is acceptable and peak current exceeds 4 A.
Availability
SI3454CDV-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power management, USB-C PD sink circuits, DC-DC synchronous rectification, and industrial sensor node power gating requiring stable component supply and halogen-free compliance.
Supply support for SI3454CDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, reliability, and environmental compliance across consumer, computing, and industrial markets.
The Si3454CDV product line targets high-density, low-voltage load switching applications where thermal performance, gate drive simplicity, and halogen-free construction are mandatory.
FAQ
What is the maximum continuous drain current for SI3454CDV-T1-GE3 at 70 °C case temperature?
The SI3454CDV-T1-GE3 supports 3.3 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package under typical PCB copper area conditions and ensures safe operation within the 150 °C maximum junction temperature.
Does SI3454CDV-T1-GE3 require a gate resistor for stable switching in a 1 MHz load switch application?
Yes - the SI3454CDV-T1-GE3 has a measured gate resistance (Rg) of 0.44–4.4 Ω, but external gate resistance remains necessary to damp ringing and control slew rate. For 1 MHz operation, a 5–10 Ω series resistor is recommended to limit peak gate current and prevent overshoot, especially given its 2.6 nC total gate charge at 4.5 V.
Can SI3454CDV-T1-GE3 be used in a high-side switch configuration?
No - the SI3454CDV-T1-GE3 is an N-channel MOSFET optimized for low-side switching. High-side use would require gate drive above the source potential (i.e., bootstrap or charge-pump circuitry), which is not supported by its ±20 V VGS rating or internal structure. Use a P-channel or dedicated high-side driver instead of SI3454CDV-T1-GE3 for that topology.
What is the body diode forward voltage of SI3454CDV-T1-GE3 at 3.1 A source current?
The SI3454CDV-T1-GE3 exhibits a body diode forward voltage (VSD) of 0.8–1.2 V at IS = 3.1 A and TA = 25 °C, per the Drain-Source Body Diode Characteristics section. This range accounts for process variation and junction temperature effects, and is critical for estimating freewheeling losses in buck converter applications.
Is SI3454CDV-T1-GE3 compatible with lead-free reflow soldering profiles?
Yes - SI3454CDV-T1-GE3 is explicitly qualified for lead-free reflow processing per J-STD-020. Its marking code "AV" and ordering suffix "-GE3" denote halogen-free and lead-free construction, and the device withstands peak temperatures up to 260 °C for 30 seconds, matching standard Pb-free SAC305 profile requirements.
SI3454CDV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 305 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.25W (Ta), 1.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3454CDV-T1-GE3 FAQ
1.How can I place an order for SI3454CDV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3454CDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3454CDV-T1-GE3 reliable?
The price and inventory of SI3454CDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3454CDV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3454CDV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3454CDV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3454CDV-T1-GE3?
SI3454CDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3454CDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3454CDV-T1-GE3?
For technical support, including SI3454CDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3454CDV-T1-GE3 requirements.
6.How does Aetrix verify that SI3454CDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3454CDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3454CDV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3454CDV-T1-GE3?
All SI3454CDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3454CDV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3454CDV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3454CDV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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