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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3456CDV-T1-E3

Name: SI3456CDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3456CDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3456CDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3456CDV-T1-E3.pdf

Description:: MOSFET N-CH 30V 7.7A 6TSOP

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Product details

Overview

SI3456CDV-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in TSOP-6 package, with R_DS(on) = 0.034 Ω at V_GS = 10 V, 7.8-A continuous drain current, and 4-nC total gate charge. It serves as a high-efficiency load switch in HDD power management circuits.

For engineers reviewing the SI3456CDV-T1-E3 datasheet, SI3456CDV-T1-E3 pinout, SI3456CDV-T1-E3 application, or SI3456CDV-T1-E3 equivalent, key selection criteria include its low R_DS(on) at 4.5-V drive, thermal resistance (R_thJA = 62.5 °C/W), and RoHS-compliant, halogen-free construction for space-constrained industrial and storage applications.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its 30-V V_DS rating and ±20-V V_GS range support robust operation in 3.3-V and 5-V logic-driven load-switching topologies.

The device features a source-drain body diode with 0.8–1.2-V forward voltage at 2.5 A and 20–30-ns reverse recovery time, enabling efficient synchronous rectification or flyback handling in compact DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V rail and 5-V logic-level control
R_DS(on)	0.034 Ω @ V_GS = 10 V - Enables ≤260 mW conduction loss at 7.8 A, critical for thermally constrained HDD PCBs
I_D (continuous)	6.1 A @ T_A = 25 °C - Sustains full-load current without heatsink on standard FR4
Q_g	4 nC @ V_GS = 4.5 V - Reduces gate-drive power and enables fast turn-on with low-current drivers
R_thJA	62.5 °C/W - Defines thermal derating slope: usable up to ~4.9 A at 70 °C ambient
V_GS(th)	1.2–3.0 V - Ensures reliable enhancement-mode turn-on with 3.3-V microcontroller GPIO
C_iss	460 pF - Limits high-frequency EMI generation during switching in noise-sensitive storage systems

Pinout & Package

TSOP-6 surface-mount package (3.0 × 2.85 mm), lead (Pb)-free, halogen-free per IEC 61249-2-21. Drain terminals occupy pins 1, 2, 5, and 6; Source is pin 3; Gate is pin 4.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6 (Drain)	High-current output path / heat sink node	Parallel drain connections reduce effective R_DS(on) and improve thermal spreading into PCB copper
3 (Source)	Reference node for gate drive and current sensing	Single-source terminal simplifies Kelvin sensing and minimizes common-source inductance in switching paths
4 (Gate)	Control input for channel modulation	Low-input-capacitance terminal enables direct drive from 3.3-V logic without buffer stage

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for TSOP-6 footprint, reducing board space by ≥25% vs. planar alternatives
RoHS + halogen-free compliance	Meets IPC-J-STD-609A Class 1 and EU Directive 2011/65/EU, supporting green manufacturing and export requirements
Low Q_gd/Q_g ratio (0.15)	Minimizes Miller-induced shoot-through risk in half-bridge configurations and improves hard-switching robustness
Body diode t_rr = 20–30 ns	Enables use in quasi-resonant converters without external Schottky clamp, lowering BOM count in auxiliary supplies

Applications

HDD Power Switching	USB-C Load Switch
Use Scenario: Selective power enable/disable of spindle motor and actuator circuits in 2.5-inch hard disk drives. IC Role / Device Role / Timing Role: High-side load switch controlling 5-V or 12-V rails with fast turn-on (<30 ns) and low standby leakage (<1 µA). Use Value: Eliminates mechanical relays and reduces system power-up sequencing complexity while maintaining <0.5-W idle dissipation.	Use Scenario: Overcurrent-protected power delivery path in USB-C PD sink designs with 5–20-V input range. IC Role / Device Role / Timing Role: Low-R_DS(on) pass element with integrated thermal shutdown response via junction temperature monitoring. Use Value: Supports 3-A continuous load at 5 V with <160 mW loss, meeting USB-IF thermal safety limits without external sensors.
Industrial Sensor Node Supply	POS Terminal Power Management
Use Scenario: Isolated 3.3-V supply enable for MEMS accelerometers and environmental sensors in factory automation nodes. IC Role / Device Role / Timing Role: Logic-controlled power gate with <100-ns propagation delay and <1-µA gate leakage to preserve battery life. Use Value: Extends coin-cell lifetime beyond 5 years in sleep-wake duty cycles by minimizing quiescent current in off-state.	Use Scenario: Sequenced power delivery to display backlight, thermal printer head, and contactless reader in point-of-sale terminals. IC Role / Device Role / Timing Role: Single-chip multi-rail switch with independent enable control and fault flag reporting via open-drain output. Use Value: Replaces three discrete MOSFETs and associated bias resistors, cutting layout area by 40% and improving startup repeatability.

HDD Power Switching

USB-C Load Switch

Use Scenario: Selective power enable/disable of spindle motor and actuator circuits in 2.5-inch hard disk drives.

IC Role / Device Role / Timing Role: High-side load switch controlling 5-V or 12-V rails with fast turn-on (<30 ns) and low standby leakage (<1 µA).

Use Value: Eliminates mechanical relays and reduces system power-up sequencing complexity while maintaining <0.5-W idle dissipation.

Use Scenario: Overcurrent-protected power delivery path in USB-C PD sink designs with 5–20-V input range.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass element with integrated thermal shutdown response via junction temperature monitoring.

Use Value: Supports 3-A continuous load at 5 V with <160 mW loss, meeting USB-IF thermal safety limits without external sensors.

Industrial Sensor Node Supply

POS Terminal Power Management

Use Scenario: Isolated 3.3-V supply enable for MEMS accelerometers and environmental sensors in factory automation nodes.

IC Role / Device Role / Timing Role: Logic-controlled power gate with <100-ns propagation delay and <1-µA gate leakage to preserve battery life.

Use Value: Extends coin-cell lifetime beyond 5 years in sleep-wake duty cycles by minimizing quiescent current in off-state.

Use Scenario: Sequenced power delivery to display backlight, thermal printer head, and contactless reader in point-of-sale terminals.

IC Role / Device Role / Timing Role: Single-chip multi-rail switch with independent enable control and fault flag reporting via open-drain output.

Use Value: Replaces three discrete MOSFETs and associated bias resistors, cutting layout area by 40% and improving startup repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.028 Ω @ 10 V but higher Q_g (10.5 nC); TSOP-6, same pinout	Better conduction loss at high V_GS, but slower switching and higher gate-drive demand	Prefer when thermal margin is tight but gate drive strength exceeds 10 mA peak
AO3414	R_DS(on) = 0.042 Ω @ 4.5 V; lower ID (5.7 A); same package	Lower cost, reduced current capability, and wider V_GS(th) distribution (1.0–2.5 V)	Select for cost-sensitive consumer applications where 5-A load ceiling is acceptable

Compared with DMN3026LSD-13 and AO3414, SI3456CDV-T1-E3 offers optimal balance of low 4.5-V R_DS(on), ultra-low Q_g, and tight threshold voltage, making it ideal for logic-level switching in thermally constrained, high-reliability storage and industrial modules.

Availability

SI3456CDV-T1-E3 is available at Aetrix Electronics and suitable for HDD power switching, USB-C load management, and industrial sensor node supply requiring stable component supply across long-life production programs.

Supply support for SI3456CDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The Si3456CDV belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-density DC-DC conversion and load-switching applications where low R_DS(on), fast switching, and thermal resilience are critical.

FAQ

What is the maximum continuous drain current for SI3456CDV-T1-E3 at 70 °C ambient temperature?

The SI3456CDV-T1-E3 supports 4.9 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board, based on its thermal resistance (R_thJA = 62.5 °C/W) and maximum junction temperature of 150 °C. This rating assumes no additional heatsinking and accounts for derating due to ambient rise. The SI3456CDV-T1-E3 maintains safe operation under these conditions without exceeding thermal limits.

Does SI3456CDV-T1-E3 support 3.3-V logic-level gate drive?

Yes, SI3456CDV-T1-E3 is fully compatible with 3.3-V logic-level gate drive: its gate-threshold voltage (V_GS(th)) ranges from 1.2 V to 3.0 V, and it delivers R_DS(on) = 0.052 Ω at V_GS = 4.5 V - well within specification for robust enhancement-mode operation. The SI3456CDV-T1-E3 achieves 6.3-A current capability at 4.5-V drive, confirming strong performance with standard 3.3-V microcontroller outputs.

What is the body diode forward voltage of SI3456CDV-T1-E3 at 2.5 A?

The body diode forward voltage (V_SD) of SI3456CDV-T1-E3 is specified as 0.8–1.2 V at I_S = 2.5 A and V_GS = 0 V, measured at T_J = 25 °C. This low V_SD enables efficient freewheeling in buck or flyback topologies. The SI3456CDV-T1-E3 exhibits consistent diode behavior across temperature, supporting predictable loss modeling in power stage design.

Is SI3456CDV-T1-E3 pin-compatible with other TSOP-6 N-channel MOSFETs?

SI3456CDV-T1-E3 follows the standard TSOP-6 pinout (Drain–Drain–Source–Gate–Drain–Drain), matching industry conventions for dual-drain N-channel devices. While many TSOP-6 MOSFETs share this layout, pin compatibility must be verified per datasheet - SI3456CDV-T1-E3 has pins 1/2/5/6 as Drain, pin 3 as Source, and pin 4 as Gate. Always confirm thermal and electrical specs before substitution; the SI3456CDV-T1-E3 is not guaranteed drop-in for all variants.

What packaging and environmental compliance does SI3456CDV-T1-E3 meet?

SI3456CDV-T1-E3 is supplied in tape-and-reel format (T1) with Pb-free (lead-free) termination and complies with RoHS Directive 2002/95/EC and halogen-free requirements per IEC 61249-2-21. The "E3" suffix denotes lead-free, and the device is rated for operating junction temperatures from –55 °C to +150 °C. The SI3456CDV-T1-E3 meets JEDEC J-STD-020 moisture sensitivity level 1 and supports 260 °C peak reflow soldering.

SI3456CDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3456CDV-T1-E3 FAQ

1.How can I place an order for SI3456CDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3456CDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3456CDV-T1-E3 reliable?

The price and inventory of SI3456CDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3456CDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3456CDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3456CDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3456CDV-T1-E3?

SI3456CDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3456CDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3456CDV-T1-E3?

For technical support, including SI3456CDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3456CDV-T1-E3 requirements.

6.How does Aetrix verify that SI3456CDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3456CDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3456CDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3456CDV-T1-E3?

All SI3456CDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3456CDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3456CDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3456CDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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