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Vishay Siliconix SI3456CDV-T1-GE3
- Part No.:
- SI3456CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3456CDV-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 7.7A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,635
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Product details
Overview
SI3456CDV-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in TSOP-6 package, with RDS(on) = 0.034 Ω at VGS = 10 V, 7.8-A continuous drain current, and 4-nC total gate charge. It serves as a high-efficiency load switch in HDD power management circuits.
For engineers reviewing the SI3456CDV-T1-GE3 datasheet, SI3456CDV-T1-GE3 pinout, SI3456CDV-T1-GE3 application, or SI3456CDV-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant construction, low gate charge for fast switching, and thermal resistance (RthJA = 62.5 °C/W) suitable for compact PCB layouts.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (1.2–3.0 V) enables compatibility with 3.3-V and 5-V logic-level drive, while the body diode supports bidirectional current handling in load-switch configurations.
The device operates within -55 °C to +150 °C junction temperature range and features a drain-source breakdown voltage of 30 V with ±20-V gate-source rating. Thermal design is supported by validated junction-to-foot (RthJF = 38 °C/W) and junction-to-ambient (RthJA = 62.5 °C/W) metrics under standard FR4 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24-V system load switching |
| RDS(on) | 0.034 Ω @ VGS = 10 V - Enables <100 mW conduction loss at 6.1 A |
| ID (continuous) | 6.1 A @ TA = 25 °C - Sustains typical HDD actuator or spindle motor rail currents |
| Qg | 4 nC @ VGS = 4.5 V - Reduces gate drive power and switching transition time |
| RthJA | 62.5 °C/W - Defines thermal derating limit on standard 1" × 1" FR4 board |
| VGS(th) | 1.2–3.0 V - Ensures turn-on with common 3.3-V microcontroller GPIOs |
| Ciss | 460 pF - Predicts input capacitance impact on gate driver loading |
Pinout & Package
TSOP-6 surface-mount package (3.0 mm × 2.85 mm), lead (Pb)-free and halogen-free per IEC 61249-2-21. Drain terminals occupy pins 1, 2, 5, and 6; source is pin 3; gate is pin 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 (Drain) | Power output node / heat sink path | Parallel drain connections reduce effective RDS(on) and improve thermal spreading to PCB copper |
| 3 (Source) | Reference node for gate drive and current sensing | Common return path for load current; ties to ground plane for stable switching |
| 4 (Gate) | Control input for channel conduction | Low-input-capacitance terminal requiring minimal drive strength for 4.5-V logic |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for efficient hard-switching |
| Halogen-free construction | Meets IEC 61249-2-21 compliance without compromising thermal or electrical performance |
| Logic-level gate drive | Operates fully enhanced with 4.5-V VGS, eliminating need for level-shifting circuitry |
| Enhanced body diode | 20–30 ns reverse recovery time (trr) enables reliable freewheeling in inductive loads |
| RoHS-compliant packaging | Lead-free TSOP-6 meets EU Directive 2002/95/EC without solderability compromise |
Applications
| HDD Actuator Power Switch | HDD Spindle Motor Control |
|---|---|
Use Scenario: Switching power to voice coil motor during seek operations in 2.5-inch HDDs. IC Role / Device Role / Timing Role: High-side load switch enabling rapid enable/disable of actuator supply rail. Use Value: Low RDS(on) minimizes voltage drop and self-heating during burst-mode operation. | Use Scenario: Controlling 5-V or 12-V spindle motor startup and coast-down sequences. IC Role / Device Role / Timing Role: Low-loss power path switch managing motor power sequencing and fault isolation. Use Value: Fast 4-nC gate charge allows precise timing control of motor ramp-up/down transitions. |
| USB Peripheral Power Management | Industrial Sensor Node Load Switch |
Use Scenario: Enabling/disabling power to USB-connected peripherals (e.g., card readers, hubs) per USB suspend/resume states. IC Role / Device Role / Timing Role: Controlled power gate responding to host-controlled enable signals. Use Value: 1.2–3.0 V VGS(th) ensures clean turn-on with 3.3-V USB controller outputs. | Use Scenario: Isolating sensor subsystems (e.g., temperature, pressure) during sleep mode in battery-powered IIoT nodes. IC Role / Device Role / Timing Role: Low-quiescent-current load switch minimizing standby leakage. Use Value: 1 µA IDSS at 30 V ensures sub-µA off-state current draw per switched rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 0.025 Ω @ 10 V; SO-8 package; higher Qg (12 nC) | Larger footprint; better conduction loss but slower switching | Preferred when thermal margin exists and lower on-resistance outweighs gate drive overhead |
| AO3400 | RDS(on) = 0.042 Ω @ 10 V; same TSOP-6; Qg = 12 nC; no halogen-free certification | Same footprint but higher conduction loss and unverified halogen-free status | Acceptable where RoHS suffices and halogen-free compliance is not required |
Compared with DMN3025LSD-13 and AO3400, the SI3456CDV-T1-GE3 offers optimal balance of low gate charge (4 nC), halogen-free compliance, and TSOP-6 footprint-making it ideal for space-constrained, fast-switching, and environmentally regulated HDD and portable applications.
Availability
SI3456CDV-T1-GE3 is available at Aetrix Electronics and suitable for HDD actuator switching, USB peripheral power control, and industrial sensor node load management requiring stable component supply across production lifecycles.
Supply support for SI3456CDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, reliability, and environmental compliance.
The Si3456CDV belongs to Vishay's TrenchFET® logic-level N-channel MOSFET product line, engineered specifically for high-density, low-voltage load switching in computing, storage, and portable electronics.
FAQ
What is the maximum continuous drain current for SI3456CDV-T1-GE3 at 70 °C ambient temperature?
The SI3456CDV-T1-GE3 supports 4.9 A continuous drain current at TA = 70 °C on a standard 1" × 1" FR4 board. This value derives from thermal derating based on RthJA = 62.5 °C/W and TJ(max) = 150 °C. At TC = 70 °C, the rating increases to 6.2 A, reflecting improved heatsinking capability when mounted to a thermally enhanced surface.
Does SI3456CDV-T1-GE3 support 3.3-V logic-level gate drive?
Yes, the SI3456CDV-T1-GE3 has a gate threshold voltage range of 1.2–3.0 V and achieves RDS(on) = 0.052 Ω at VGS = 4.5 V, ensuring full enhancement with 3.3-V microcontroller outputs. Its low gate charge (4 nC at 4.5 V) further reduces required drive strength, making it compatible with standard GPIOs without external level shifters.
What is the body diode forward voltage of SI3456CDV-T1-GE3 at 2.5 A?
The body diode forward voltage (VSD) of the SI3456CDV-T1-GE3 is specified as 0.8–1.2 V at IS = 2.5 A and VGS = 0 V. This diode supports freewheeling current during inductive load turn-off and contributes to predictable energy dissipation during recovery (Qrr = 12–20 nC).
Is SI3456CDV-T1-GE3 qualified for automotive applications?
No, the SI3456CDV-T1-GE3 is not AEC-Q101 qualified. Its datasheet specifies operation from -55 °C to +150 °C, but Vishay does not list automotive qualification or PPAP documentation for this part. For automotive-grade alternatives, consult Vishay's AEC-Q101-certified TrenchFET® portfolio such as the SQ series.
How does the halogen-free status of SI3456CDV-T1-GE3 affect its thermal performance?
The halogen-free status of SI3456CDV-T1-GE3-certified per IEC 61249-2-21-does not degrade thermal performance. Its RthJA remains 62.5 °C/W and RthJF 38 °C/W, identical to the non-halogen-free Si3456CDV-T1-E3 variant. Material substitution targets flame retardancy only and preserves all electrical and thermal specifications.
SI3456CDV-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 460 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3456CDV-T1-GE3 FAQ
1.How can I place an order for SI3456CDV-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3456CDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3456CDV-T1-GE3 reliable?
The price and inventory of SI3456CDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3456CDV-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI3456CDV-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3456CDV-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3456CDV-T1-GE3?
SI3456CDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3456CDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3456CDV-T1-GE3?
For technical support, including SI3456CDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3456CDV-T1-GE3 requirements.
6.How does Aetrix verify that SI3456CDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI3456CDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3456CDV-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI3456CDV-T1-GE3?
All SI3456CDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3456CDV-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3456CDV-T1-GE3 part is unused and in its original packaging.
Return procedure for SI3456CDV-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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