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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3456DDV-T1-BE3

Name: SI3456DDV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3456DDV-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3456DDV-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3456DDV-T1-BE3.pdf

Description:: N-CHANNEL 30-V (D-S) MOSFET

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Product details

Overview

SI3456DDV-T1-BE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.040 Ω at V_GS = 10 V, Q_g = 2.8 nC, continuous drain current I_D = 6.3 A at T_C = 25 °C, and optimized for high-efficiency load switching in compact DC/DC converters and HDD power rails.

For engineers reviewing the SI3456DDV-T1-BE3 datasheet, SI3456DDV-T1-BE3 pinout, SI3456DDV-T1-BE3 application, or SI3456DDV-T1-BE3 equivalent, key selection criteria include its low gate charge for fast switching, thermally robust TSOP-6 footprint, 30 V V_DS rating suitable for 24 V bus systems, and verified performance in high-density power management where R_DS(on) stability over temperature and body diode recovery are critical.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 3.0 V, enabling compatibility with 3.3 V and 4.5 V logic-level drive, while the 0.041 Ω R_DS(on) at V_GS = 4.5 V supports efficient operation in synchronous buck stages.

Thermal design is enabled by a maximum junction-to-foot thermal resistance (R_thJF) of 46 °C/W and a junction-to-ambient rating of 74 °C/W (t ≤ 5 s), supporting surface-mount use on standard FR4 without external heatsinking in moderate-power applications up to 1.7 W at ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24 V nominal input rails with 25 % headroom for transients.
R_DS(on) max @ V_GS = 10 V	0.040 Ω - Enables <100 mW conduction loss at 5 A DC load current.
R_DS(on) max @ V_GS = 4.5 V	0.050 Ω - Ensures reliable turn-on with standard 3.3 V/4.5 V microcontroller GPIOs.
Q_g typ.	2.8 nC - Reduces gate drive power and enables >1 MHz switching in compact converters.
I_D continuous @ T_C = 25 °C	6.3 A - Sustains full-rated current with case temperature monitoring and minimal derating.
Body diode V_SD	0.8–1.2 V @ I_S = 4 A - Low forward drop improves efficiency in asynchronous rectification or freewheeling paths.
t_rr typ.	11 ns - Minimizes reverse recovery losses during hard-switched transitions.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, with exposed drain pad for thermal enhancement. Pin 1–2–5–6: Drain (common); Pin 3: Gate; Pin 4: Source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain	High-side or low-side switch node; electrically tied to exposed thermal pad for improved heat transfer to PCB copper.
3	Gate	Control input requiring <2.8 nC charge for full enhancement; compatible with 3.3 V logic drivers.
4	Source	Reference node for gate drive and current sensing; connects to ground or power rail return path.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency power conversion efficiency.
Low gate charge (2.8 nC)	Reduces driver IC power consumption and enables faster switching with lower EMI risk.
Enhanced body diode performance	11 ns t_rr and 4–8 nC Q_rr minimize shoot-through and recovery losses in synchronous and quasi-resonant topologies.
Thermally optimized TSOP-6	Exposed drain pad and low R_thJF (46 °C/W max) allow direct PCB thermal coupling without added heatsinks.
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V ensures compatibility with common MCU and PMIC outputs.

Applications

Hard Disk Drive Power Switching	Point-of-Load DC/DC Converter High-Side Switch
Use Scenario: Controlling +5 V or +12 V power delivery to HDD spindle motor and actuator circuits during spin-up and standby modes. IC Role / Device Role / Timing Role: Low-side or high-side load switch managing inrush current and sequencing with precise on/off control. Use Value: 0.040 Ω R_DS(on) limits voltage drop and self-heating during sustained 4–6 A loads, extending HDD reliability.	Use Scenario: High-side synchronous rectifier in 3.3 V or 5 V buck converter supplying FPGA or ASIC core voltage. IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz–1 MHz with fast turn-on/turn-off timing (td(on) = 4 ns @ 10 V). Use Value: 2.8 nC Q_g and 11 ns t_rr reduce switching losses and improve light-load efficiency over discrete alternatives.
USB-C Power Delivery Load Switch	Industrial Sensor Node Power Gating
Use Scenario: Enabling/disabling 20 V power path in USB-C PD sink applications with overcurrent protection coordination. IC Role / Device Role / Timing Role: Protected load switch placed between PD controller and downstream DC/DC stage. Use Value: 30 V V_DS rating accommodates full USB-C PD voltage range (5–20 V) with margin for line transients.	Use Scenario: Power gating for ultra-low-power industrial sensors (e.g., RS-485 transceivers, analog front-ends) during sleep cycles. IC Role / Device Role / Timing Role: Low-quiescent-current enable switch isolating subsystems to meet <1 µA standby leakage targets. Use Value: IDSS ≤ 1 µA at 30 V ensures negligible off-state leakage, preserving battery life in multi-year deployments.

Hard Disk Drive Power Switching

Point-of-Load DC/DC Converter High-Side Switch

Use Scenario: Controlling +5 V or +12 V power delivery to HDD spindle motor and actuator circuits during spin-up and standby modes.

IC Role / Device Role / Timing Role: Low-side or high-side load switch managing inrush current and sequencing with precise on/off control.

Use Value: 0.040 Ω R_DS(on) limits voltage drop and self-heating during sustained 4–6 A loads, extending HDD reliability.

Use Scenario: High-side synchronous rectifier in 3.3 V or 5 V buck converter supplying FPGA or ASIC core voltage.

IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz–1 MHz with fast turn-on/turn-off timing (td(on) = 4 ns @ 10 V).

Use Value: 2.8 nC Q_g and 11 ns t_rr reduce switching losses and improve light-load efficiency over discrete alternatives.

USB-C Power Delivery Load Switch

Industrial Sensor Node Power Gating

Use Scenario: Enabling/disabling 20 V power path in USB-C PD sink applications with overcurrent protection coordination.

IC Role / Device Role / Timing Role: Protected load switch placed between PD controller and downstream DC/DC stage.

Use Value: 30 V V_DS rating accommodates full USB-C PD voltage range (5–20 V) with margin for line transients.

Use Scenario: Power gating for ultra-low-power industrial sensors (e.g., RS-485 transceivers, analog front-ends) during sleep cycles.

IC Role / Device Role / Timing Role: Low-quiescent-current enable switch isolating subsystems to meet <1 µA standby leakage targets.

Use Value: IDSS ≤ 1 µA at 30 V ensures negligible off-state leakage, preserving battery life in multi-year deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3457DV-T1-BE3	Same TSOP-6 package, but P-channel; V_GS(th) = –1.2 to –3.0 V; R_DS(on) = 0.045 Ω @ V_GS = –10 V.	Used in high-side switch configurations where gate drive referenced to source is preferred.	Select Si3457DV-T1-BE3 only when complementary P-channel behavior is required; not a drop-in replacement.
DMN3028LSD-13	TSOP-6, 30 V, R_DS(on) = 0.028 Ω @ 10 V, Q_g = 4.5 nC; higher gate charge and lower R_DS(on).	Better conduction efficiency at high current, but slower switching due to higher Q_g.	Choose DMN3028LSD-13 when lowest R_DS(on) dominates over switching speed; verify gate drive capability.

Compared with Si3457DV-T1-BE3 and DMN3028LSD-13, the SI3456DDV-T1-BE3 offers the optimal balance of low Q_g and moderate R_DS(on) for high-frequency, space-constrained load switching-making it preferable in 1 MHz+ DC/DC and fast-sequencing applications where gate drive strength is limited.

Availability

SI3456DDV-T1-BE3 is available at Aetrix Electronics and suitable for hard disk drive power management, point-of-load DC/DC converters, and USB-C power delivery load switching requiring stable component supply and consistent lead-free/halogen-free compliance.

Supply support for SI3456DDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI3456DDV-T1-BE3 belongs to Vishay's TrenchFET® Gen III N-channel MOSFET product line, engineered for high-efficiency, high-density power conversion in computing, storage, and portable electronics.

FAQ

What is the maximum continuous drain current rating for SI3456DDV-T1-BE3 at 70 °C case temperature?

The SI3456DDV-T1-BE3 supports 5.1 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal constraints of the TSOP-6 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SI3456DDV-T1-BE3 maintains R_DS(on) stability across this range, ensuring predictable conduction loss.

Does SI3456DDV-T1-BE3 support logic-level gate drive from a 3.3 V microcontroller?

Yes, the SI3456DDV-T1-BE3 has a gate threshold voltage (V_GS(th)) of 1.2–3.0 V and guarantees R_DS(on) ≤ 0.050 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V GPIOs when driven through appropriate series resistance. The SI3456DDV-T1-BE3 delivers usable on-state performance even at marginal gate voltages, reducing need for level-shifting circuitry.

What is the thermal resistance from junction to ambient for SI3456DDV-T1-BE3 under short-duration pulse conditions?

Under t ≤ 5 s pulse conditions on a 1" × 1" FR4 board, the SI3456DDV-T1-BE3 exhibits a maximum junction-to-ambient thermal resistance (R_thJA) of 74 °C/W. This value enables rapid transient power handling up to 2.7 W without exceeding T_J = 150 °C. The SI3456DDV-T1-BE3 benefits from its exposed drain pad to further improve thermal coupling in real layouts.

How does the body diode performance of SI3456DDV-T1-BE3 compare to standard MOSFETs in freewheeling applications?

The SI3456DDV-T1-BE3 features a fast body diode with t_rr = 11 ns and Q_rr = 4–8 nC, significantly better than typical general-purpose MOSFETs (t_rr > 30 ns). This reduces voltage spikes and conduction loss during dead-time intervals. In designs using the SI3456DDV-T1-BE3 for asynchronous rectification, these parameters directly improve system efficiency and EMI profile.

Is SI3456DDV-T1-BE3 RoHS-compliant and halogen-free?

Yes, the SI3456DDV-T1-BE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21 requirements. The "BE3" suffix explicitly denotes this compliance; the device uses matte tin termination and green molding compound. The SI3456DDV-T1-BE3 is suitable for consumer, industrial, and automotive-qualified designs requiring strict environmental conformity.

SI3456DDV-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta), 6.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3456DDV-T1-BE3 FAQ

1.How can I place an order for SI3456DDV-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3456DDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3456DDV-T1-BE3 reliable?

The price and inventory of SI3456DDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3456DDV-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI3456DDV-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3456DDV-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3456DDV-T1-BE3?

SI3456DDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3456DDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3456DDV-T1-BE3?

For technical support, including SI3456DDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3456DDV-T1-BE3 requirements.

6.How does Aetrix verify that SI3456DDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI3456DDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3456DDV-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI3456DDV-T1-BE3?

All SI3456DDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3456DDV-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3456DDV-T1-BE3 part is unused and in its original packaging.

Return procedure for SI3456DDV-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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