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Vishay Siliconix SI3458BDV-T1-BE3
- Part No.:
- SI3458BDV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3458BDV-T1-BE3.pdf
- Description:
- MOSFET N-CH 60V 3.2A/4.1A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,174
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Product details
Overview
SI3458BDV-T1-BE3 from Vishay Siliconix is an N-channel 60-V TrenchFET® power MOSFET in TSOP-6 package, rated for 4.1 A continuous drain current at TC = 25 °C, with RDS(on) of 0.100 Ω at VGS = 10 V and 0.128 Ω at VGS = 4.5 V, used as a load switch in portable DC/DC converters and LED backlight circuits.
For engineers reviewing the SI3458BDV-T1-BE3 datasheet, SI3458BDV-T1-BE3 pinout, SI3458BDV-T1-BE3 application, or SI3458BDV-T1-BE3 equivalent, key selection criteria include its 60-V VDS, low gate charge (3.5 nC typ. at 4.5 V), 100% Rg tested production, and thermal performance validated under JEDEC MO-193C TSOP-6 footprint.
Technical Context
This device operates as a single N-channel enhancement-mode MOSFET with trench-based silicon architecture optimized for low conduction loss and fast switching in compact portable power stages. Its gate threshold voltage (1.5–3.0 V) enables direct drive from 3.3-V and 4.5-V logic, while the 350-pF input capacitance and 20-pF reverse transfer capacitance support stable operation in high-frequency DC/DC topologies.
The integrated body diode exhibits 0.8–1.2 V forward voltage at 2.5 A and 25–50 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling paths where controlled diode conduction is required. Thermal resistance from junction-to-foot is 32 °C/W (typ.), enabling efficient heat transfer through the exposed drain pad in surface-mount layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48-V bus and 36-V industrial input rails |
| RDS(on) @ 10 V | 0.100 Ω - Enables ≤0.4 W conduction loss at 2 A, critical for thermally constrained portable PCBs |
| RDS(on) @ 4.5 V | 0.128 Ω - Ensures usable on-resistance when driven by standard 3.3-V/4.5-V microcontroller GPIO |
| Qg typ. | 3.5 nC - Low gate charge reduces driver power demand and switching losses in 500-kHz+ converters |
| ID cont. @ TC=25°C | 4.1 A - Continuous current rating defined at case temperature, not ambient, supporting heatsink-assisted designs |
| RthJF max. | 38 °C/W - Junction-to-foot thermal resistance confirms effective heat path via exposed drain pad |
| VGS(th) | 1.5–3.0 V - Threshold range ensures reliable turn-on with 3.3-V logic while avoiding false triggering near ground |
Pinout & Package
TSOP-6 package per JEDEC MO-193C, with exposed drain pad for thermal and electrical connection to PCB ground plane. Dimensions: 3.05 mm × 2.85 mm × 1.05 mm (L × W × H), 0.95 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6 | Drain (D) | Four parallel drain terminals tied internally to exposed pad - primary current path and main thermal conduction path to PCB |
| 4 | Source (S) | Source terminal - connects to load return or ground reference; defines common node for body diode conduction |
| 5 | Gate (G) | Control input - requires <3.5 Ω series resistance to limit ringing; sensitive to ESD (±20 V max) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables lower RDS(on) per die area than planar MOSFETs, reducing package size without sacrificing current capability |
| 100% Rg tested | Guarantees gate resistance ≤3.5 Ω, ensuring predictable turn-on timing and minimizing gate driver stress |
| Exposed drain pad | Provides low-inductance, low-thermal-resistance path to PCB copper, improving both switching efficiency and thermal derating |
| Body diode trr = 25–50 ns | Supports moderate-frequency synchronous rectification without external Schottky replacement in cost-sensitive designs |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| Portable Load Switch | LED Backlight Control |
|---|---|
Use Scenario: Power sequencing for USB-powered peripherals and handheld medical devices requiring controlled 5-V or 3.3-V rail enable. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to downstream subsystems; operated in linear or saturated mode. Use Value: Low RDS(on) minimizes voltage drop and self-heating during sustained 2–3 A loads, extending battery runtime. | Use Scenario: PWM dimming control for white LED strings in tablet displays and portable diagnostic equipment. IC Role / Device Role / Timing Role: Low-side current sink switch modulating LED current at 1–20 kHz; driven directly by MCU PWM output. Use Value: Fast 10–15 ns fall time and low Qgd (0.95 nC) ensure clean PWM edges and minimal duty-cycle distortion. |
| DC/DC Converter High-Side Switch | Battery Protection Circuit |
Use Scenario: High-side switch in buck converter topologies for point-of-load regulation in FPGA I/O banks and sensor modules. IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET operating at 300–1000 kHz with VGS = 4.5–10 V drive. Use Value: Ciss = 350 pF and Crss = 20 pF yield low Miller effect, enabling stable switching with minimal gate drive overshoot. | Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs for wearables and IoT sensors. IC Role / Device Role / Timing Role: Reverse-polarity protection switch placed between battery and system load; conducts only during normal polarity. Use Value: 60-V VDS withstands load-dump transients up to 45 V, and 10-μA IDSS ensures negligible standby leakage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3457BDV-T1-BE3 | Same TSOP-6 package, but P-channel; VGS(th) = –1.5 to –3.0 V; RDS(on) = 0.115 Ω @ –4.5 V | Requires high-side gate drive inversion; suited for reverse-polarity protection where source must tie to battery positive | Select for high-side switch configurations needing source-connected battery positive, not for low-side or synchronous rectifier use. |
| DMN3026LSD-13 | 30-V VDS, RDS(on) = 0.032 Ω @ 10 V, SO-8 package, higher current (6.5 A) | Larger footprint and lower voltage rating - unsuitable for 48-V input or 60-V transient environments | Choose only for 24-V or lower systems where ultra-low RDS(on) justifies larger board area and reduced voltage margin. |
Compared with Si3457BDV-T1-BE3 and DMN3026LSD-13, SI3458BDV-T1-BE3 uniquely balances 60-V robustness, TSOP-6 compactness, and 4.5-V logic compatibility - making it optimal for space-constrained, mid-voltage portable power switches where gate drive simplicity and thermal efficiency are prioritized.
Availability
SI3458BDV-T1-BE3 is available at Aetrix Electronics and suitable for portable load switching, LED backlight control, and DC/DC converter high-side applications requiring stable component supply across design-in, prototyping, and volume production phases.
Supply support for SI3458BDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.
The Si3458BDV belongs to Vishay's TrenchFET® Gen III N-channel MOSFET product line, engineered for high-efficiency, low-profile power management in battery-operated and space-constrained electronics.
FAQ
What is the maximum continuous drain current for SI3458BDV-T1-BE3 at 70°C case temperature?
The maximum continuous drain current for SI3458BDV-T1-BE3 is 3.2 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package under real-world PCB mounting conditions and must be verified against actual board layout and airflow. SI3458BDV-T1-BE3 maintains safe operation within this limit when the drain pad is soldered to ≥1 cm² of 2-oz copper.
Does SI3458BDV-T1-BE3 support 3.3-V gate drive in practice?
Yes, SI3458BDV-T1-BE3 supports 3.3-V gate drive: its VGS(th) range is 1.5–3.0 V, and RDS(on) is characterized at 4.5 V (0.128 Ω max). At 3.3 V, typical RDS(on) rises to ~0.18 Ω - acceptable for ≤1.5 A loads with adequate thermal margin. SI3458BDV-T1-BE3 should be validated with actual gate driver rise/fall times and PCB trace inductance.
What is the thermal resistance from junction to ambient for SI3458BDV-T1-BE3 under standard FR4 mounting?
The maximum junction-to-ambient thermal resistance (RthJA) for SI3458BDV-T1-BE3 is 62.5 °C/W under standard 1" × 1" FR4 board conditions (t ≤ 5 s pulse). For steady-state operation, RthJA is not guaranteed; designers must rely on RthJF = 38 °C/W (junction-to-foot) and implement thermal vias under the drain pad. SI3458BDV-T1-BE3 thermal performance depends critically on PCB copper area and via count.
Is SI3458BDV-T1-BE3 pin-compatible with other TSOP-6 MOSFETs like Si3464DV?
No, SI3458BDV-T1-BE3 is not pin-compatible with Si3464DV: although both use TSOP-6, Si3464DV has pinout G-S-D-D-D-D (gate, source, four drains), whereas SI3458BDV-T1-BE3 uses D-D-G-D-S-D (drain, drain, gate, drain, source, drain). Misalignment causes immediate functional failure. SI3458BDV-T1-BE3 pinout is fixed per datasheet Figure 1 and must be verified against land pattern before layout.
What is the body diode forward voltage of SI3458BDV-T1-BE3 at 2.5 A?
The body diode forward voltage (VSD) of SI3458BDV-T1-BE3 is 0.8–1.2 V at IS = 2.5 A and VGS = 0 V, measured at TJ = 25 °C. This diode is intrinsic to the MOSFET structure and supports freewheeling current in boost/buck converters. SI3458BDV-T1-BE3 body diode recovery time (trr) is 25–50 ns, limiting use to ≤500-kHz topologies without external snubbing.
SI3458BDV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Ta), 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3458BDV-T1-BE3 FAQ
1.How can I place an order for SI3458BDV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3458BDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3458BDV-T1-BE3 reliable?
The price and inventory of SI3458BDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3458BDV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3458BDV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3458BDV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3458BDV-T1-BE3?
SI3458BDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3458BDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3458BDV-T1-BE3?
For technical support, including SI3458BDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3458BDV-T1-BE3 requirements.
6.How does Aetrix verify that SI3458BDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3458BDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3458BDV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3458BDV-T1-BE3?
All SI3458BDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3458BDV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3458BDV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3458BDV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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