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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3458BDV-T1-E3

Name: SI3458BDV-T1-E3
Brand: Vishay Siliconix
SKU: SI3458BDV-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3458BDV-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3458BDV-T1-E3.pdf

Description:: MOSFET N-CH 60V 4.1A 6TSOP

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Product details

Overview

SI3458BDV-T1-E3 from Vishay Siliconix is an N-channel 60-V TrenchFET® power MOSFET in TSOP-6 package, rated for 4.1 A continuous drain current at T_C = 25 °C, with R_DS(on) of 0.100 Ω at V_GS = 10 V and 0.128 Ω at V_GS = 4.5 V. It serves as a compact, low-R_DS(on) load switch in portable DC/DC converters and LED backlight circuits.

For engineers reviewing the SI3458BDV-T1-E3 datasheet, SI3458BDV-T1-E3 pinout, SI3458BDV-T1-E3 application, or SI3458BDV-T1-E3 equivalent, key selection criteria include its 60-V V_DS, 3.5 nC typical gate charge at 4.5 V drive, 100% R_g tested qualification, and thermal resistance of 32 °C/W (junction-to-foot), critical for thermally constrained portable designs.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its 6-lead TSOP package provides enhanced thermal performance via direct drain-to-foot conduction path, supporting high-current operation without external heatsinking in space-limited applications.

The device features a body diode with 25–50 ns reverse recovery time and 40–80 nC Q_rr, enabling efficient synchronous rectification or freewheeling in buck converters. Gate threshold voltage is specified from 1.5 V to 3.0 V, ensuring reliable turn-on with 4.5 V logic-level drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48-V input rails and transient margin in industrial/portable power stages
R_DS(on) @ 10 V	0.100 Ω - Enables ≤330 mW conduction loss at 1.8 A, suitable for battery-powered load switching
R_DS(on) @ 4.5 V	0.128 Ω - Ensures usable on-state performance with standard 3.3/5-V GPIO control without level-shifting
Q_g typ.	3.5 nC - Low gate charge reduces driver power and enables >1 MHz switching in compact DC/DC designs
I_D cont.	4.1 A @ T_C = 25 °C - Supports medium-power loads such as multi-LED strings or motor drivers in handheld devices
R_thJF	32 °C/W - Junction-to-foot thermal resistance allows direct PCB copper pour cooling, eliminating need for thermal vias in many layouts
V_GS(th)	1.5–3.0 V - Guaranteed turn-on with 3.3-V microcontrollers, avoiding marginal biasing in low-voltage systems

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for thermal conduction; footprint compliant with JEDEC MO-193C standard and Vishay-recommended land pattern (Document 72610).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB
3	Gate (G)	Control terminal requiring <3.5 Ω gate resistance for optimal switching; sensitive to ESD per 100% R_g test
5	Source (S)	Reference node for gate drive and current return; tied to system ground or low-side switch node

Key Features

Feature	Design Value
TrenchFET® construction	Delivers industry-leading R_DS(on) × area efficiency for TSOP-6, reducing board space vs. SO-8 alternatives
100% R_g tested	Ensures consistent gate drive timing and eliminates outliers in high-volume automated assembly
Exposed drain thermal pad	Enables 32 °C/W junction-to-foot conduction, permitting 2.1 W dissipation at T_C = 70 °C without heatsink
Low Q_gd/Q_gs ratio	0.95 nC / 1.1 nC ≈ 0.86 - Improves hard-switching immunity and reduces Miller-induced shoot-through risk
Body diode Q_rr	40–80 nC - Optimized for synchronous rectifier use in 500 kHz–1 MHz buck converters with minimal reverse recovery loss

Applications

Portable Load Switching	LED Backlight Control
Use Scenario: Power gating of auxiliary subsystems (e.g., USB peripherals, sensors) in smartphones and tablets to extend battery life. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path between battery and load; operates in static on/off mode with <10 μA I_DSS leakage. Use Value: 0.128 Ω R_DS(on) at 4.5 V ensures <100 mV drop at 780 mA, minimizing voltage sag during wake-up events.	Use Scenario: PWM dimming control of white LED strings in LCD displays for notebooks and medical handhelds. IC Role / Device Role / Timing Role: High-side or low-side current switch modulated at 1–20 kHz; leverages fast 10–30 ns switching transitions. Use Value: 3.5 nC Q_g enables clean 20 kHz PWM edges with minimal gate driver loss, preserving display contrast and efficiency.
DC/DC Converter Synchronous Rectifier	USB Power Delivery Switch
Use Scenario: Secondary-side rectification in 12-V input buck converters powering FPGA core rails in portable test equipment. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active phase. Use Value: 25–50 ns t_rr and 40–80 nC Q_rr minimize reverse recovery loss, improving converter efficiency by ≥1.2% at 2 A output.	Use Scenario: Overcurrent-protected 5-V/3-A power path for USB-C ports in docking stations and portable monitors. IC Role / Device Role / Timing Role: Hot-swap MOSFET with integrated current sensing capability enabled by precise R_DS(on) tolerance (±20%) and thermal shutdown margin. Use Value: 60-V V_DS withstands 5-V rail transients up to ±20 V, meeting USB PD 3.1 fault robustness requirements.

Portable Load Switching

LED Backlight Control

Use Scenario: Power gating of auxiliary subsystems (e.g., USB peripherals, sensors) in smartphones and tablets to extend battery life.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path between battery and load; operates in static on/off mode with <10 μA I_DSS leakage.

Use Value: 0.128 Ω R_DS(on) at 4.5 V ensures <100 mV drop at 780 mA, minimizing voltage sag during wake-up events.

Use Scenario: PWM dimming control of white LED strings in LCD displays for notebooks and medical handhelds.

IC Role / Device Role / Timing Role: High-side or low-side current switch modulated at 1–20 kHz; leverages fast 10–30 ns switching transitions.

Use Value: 3.5 nC Q_g enables clean 20 kHz PWM edges with minimal gate driver loss, preserving display contrast and efficiency.

DC/DC Converter Synchronous Rectifier

USB Power Delivery Switch

Use Scenario: Secondary-side rectification in 12-V input buck converters powering FPGA core rails in portable test equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active phase.

Use Value: 25–50 ns t_rr and 40–80 nC Q_rr minimize reverse recovery loss, improving converter efficiency by ≥1.2% at 2 A output.

Use Scenario: Overcurrent-protected 5-V/3-A power path for USB-C ports in docking stations and portable monitors.

IC Role / Device Role / Timing Role: Hot-swap MOSFET with integrated current sensing capability enabled by precise R_DS(on) tolerance (±20%) and thermal shutdown margin.

Use Value: 60-V V_DS withstands 5-V rail transients up to ±20 V, meeting USB PD 3.1 fault robustness requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3457DV-T1-E3	Same TSOP-6 package, but P-channel; V_GS(th) = –1.0 to –2.5 V; R_DS(on) = 0.115 Ω @ –4.5 V	Requires high-side configuration with inverted logic; better suited for always-on rail switching where gate drive is referenced to V_IN	Select for high-side load switching where bootstrap complexity must be avoided and negative gate bias is acceptable.
DMN3026LSD-13	30-V rating, R_DS(on) = 0.026 Ω @ 4.5 V, 8-A I_D; SO-8 package with higher thermal mass	Lower voltage headroom limits use to ≤24-V systems; larger footprint increases layout area by 3.5×	Choose when lower conduction loss dominates over size constraints and input voltage remains ≤24 V.

Compared with Si3457DV-T1-E3 and DMN3026LSD-13, the SI3458BDV-T1-E3 offers optimal balance of 60-V capability, TSOP-6 compactness, and 4.5-V drive compatibility-making it preferred for space-constrained, battery-fed 48-V-tolerant load switches where gate drive is referenced to ground.

Availability

SI3458BDV-T1-E3 is available at Aetrix Electronics and suitable for portable load switching, LED backlight control, DC/DC converter synchronous rectification, and USB power delivery applications requiring stable component supply and RoHS-compliant lead-free packaging.

Supply support for SI3458BDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI3458BDV-T1-E3 belongs to Vishay's TrenchFET® Gen III N-channel MOSFET family, engineered for high-efficiency, low-voltage portable power management where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI3458BDV-T1-E3 at 70 °C case temperature?

The SI3458BDV-T1-E3 supports 3.2 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained power dissipation; actual current capability depends on PCB copper area and ambient conditions. The SI3458BDV-T1-E3 maintains safe operation up to 150 °C junction temperature when properly heatsunk via its exposed drain pad.

Does SI3458BDV-T1-E3 support 3.3-V logic-level gate drive?

Yes, the SI3458BDV-T1-E3 has a gate threshold voltage range of 1.5 V to 3.0 V and guarantees R_DS(on) ≤ 0.128 Ω at V_GS = 4.5 V, making it fully compatible with 3.3-V microcontroller GPIOs. While not guaranteed to fully enhance at 3.3 V, typical performance at 3.3 V yields ~0.15 Ω R_DS(on) per characterization curves - sufficient for many low-duty-cycle or low-current load switch applications. The SI3458BDV-T1-E3 is optimized for 4.5 V drive but tolerates 3.3 V with predictable margin.

What is the thermal resistance from junction to foot (R_thJF) for SI3458BDV-T1-E3?

The SI3458BDV-T1-E3 has a maximum junction-to-foot thermal resistance of 38 °C/W and a typical value of 32 °C/W, measured from die junction to the exposed drain pad (foot). This parameter enables direct thermal coupling to PCB copper pours, bypassing traditional junction-to-ambient paths. For thermal design, the SI3458BDV-T1-E3 achieves 2.1 W power dissipation at T_C = 70 °C using this conduction path - critical for fanless portable systems. Always verify layout against Vishay's recommended land pattern (Doc. 72610).

Is SI3458BDV-T1-E3 suitable for synchronous rectification in a 1-MHz buck converter?

Yes, the SI3458BDV-T1-E3 is suitable due to its 3.5 nC typical total gate charge at 4.5 V, 10–30 ns switching times, and body diode reverse recovery time of 25–50 ns. These parameters enable efficient operation at 1 MHz with minimal switching loss and reduced shoot-through risk. The SI3458BDV-T1-E3's low Q_gd/Q_gs ratio further enhances hard-switching robustness. However, layout parasitics and gate driver strength must be optimized to realize full benefit - especially for high-frequency operation.

What marking code identifies SI3458BDV-T1-E3 on the device package?

The SI3458BDV-T1-E3 is marked with the code "AN" on its top surface, per Vishay's product summary and ordering information. This 2-character laser marking is consistent across tape-and-reel shipments and matches the device's identification in Vishay's documentation (S09-0660-Rev. B). The marking appears adjacent to the Vishay logo and date code; no additional suffixes or variants are used for the -T1-E3 variant. Always verify physical marking against the SI3458BDV-T1-E3 datasheet revision to confirm authenticity.

SI3458BDV-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3458BDV-T1-E3 FAQ

1.How can I place an order for SI3458BDV-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3458BDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3458BDV-T1-E3 reliable?

The price and inventory of SI3458BDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3458BDV-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI3458BDV-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3458BDV-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3458BDV-T1-E3?

SI3458BDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3458BDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3458BDV-T1-E3?

For technical support, including SI3458BDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3458BDV-T1-E3 requirements.

6.How does Aetrix verify that SI3458BDV-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI3458BDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3458BDV-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI3458BDV-T1-E3?

All SI3458BDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3458BDV-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3458BDV-T1-E3 part is unused and in its original packaging.

Return procedure for SI3458BDV-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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